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1. 发明授权

US08936985B2 Methods related to power semiconductor devices with thick bottom oxide layers 有权
标题翻译：与厚底层氧化物层的功率半导体器件相关的方法
公开(公告)号：US08936985B2
公开(公告)日：2015-01-20
申请号：US13418128
申请日：2012-03-12
申请人： Ashok Challa , Alan Elbanhawy , Dean E. Probst , Steven P. Sapp , Peter H. Wilson , Babak S. Sani , Becky Losee , Robert Herrick , James J. Murphy , Gordon K. Madson , Bruce D. Marchant , Christopher B. Kocon , Debra S. Woolsey
发明人： Ashok Challa , Alan Elbanhawy , Dean E. Probst , Steven P. Sapp , Peter H. Wilson , Babak S. Sani , Becky Losee , Robert Herrick , James J. Murphy , Gordon K. Madson , Bruce D. Marchant , Christopher B. Kocon , Debra S. Woolsey
IPC分类号： H01L29/78 , H01L29/66 , H01L21/683 , H01L21/311 , H01L29/40 , H01L29/06 , H01L21/3065 , H01L29/739 , H02M3/335 , H02M3/00 , H01L29/10 , H02M7/48 , H01L29/49 , H01L29/423 , H01L29/165 , H01L23/495 , H01L21/265 , H01L29/417 , H01L23/498
CPC分类号： H01L29/407 , H01L21/26586 , H01L21/3065 , H01L21/30655 , H01L21/31116 , H01L21/6835 , H01L23/4952 , H01L23/49816 , H01L29/0623 , H01L29/0634 , H01L29/0653 , H01L29/0661 , H01L29/0696 , H01L29/1095 , H01L29/165 , H01L29/402 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/4238 , H01L29/4933 , H01L29/495 , H01L29/66348 , H01L29/66734 , H01L29/7396 , H01L29/7802 , H01L29/7804 , H01L29/7805 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/7815 , H01L29/7828 , H01L29/7831 , H01L2221/6834 , H01L2221/68363 , H01L2224/16 , H01L2924/01012 , H01L2924/01019 , H01L2924/01078 , H01L2924/10253 , H01L2924/12032 , H01L2924/1301 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15311 , H01L2924/1532 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H02M3/00 , H02M3/33592 , H02M7/48 , Y02B70/1475 , H01L2924/00 , H01L2924/00014
摘要： A method can include forming a drift region, forming a well region above the drift region, and forming an active trench extending through the well region and into the drift region. The method can include forming a first source region in contact with a first sidewall of the active trench and a second source region in contact with a second sidewall of the active trench. The method also includes forming a charge control trench where the charge control trench is aligned parallel to the active trench and laterally separated from the active trench by a mesa region, and where the portion of the well region is in contact with the charge control trench and excludes any source region. The method also includes forming an oxide along a bottom of the active trench having a thickness greater than a thickness of an oxide along the first sidewall of the active trench.
摘要翻译：一种方法可以包括形成漂移区，在漂移区上形成阱区，以及形成延伸穿过阱区并进入漂移区的有源沟槽。该方法可以包括形成与有源沟槽的第一侧壁接触的第一源极区域和与有源沟槽的第二侧壁接触的第二源极区域。该方法还包括形成电荷控制沟槽，其中电荷控制沟槽平行于有源沟槽对齐并且通过台面区域与有源沟槽横向分离，并且其中阱区域的部分与电荷控制沟槽接触，排除任何来源地区。该方法还包括沿有源沟槽的底部沿着有源沟槽的第一侧壁形成厚度大于氧化物厚度的氧化物。

2. 发明授权

US07977744B2 Field effect transistor with trench filled with insulating material and strips of semi-insulating material along trench sidewalls 有权
标题翻译：具有填充有绝缘材料的沟槽的场效应晶体管和沿沟槽侧壁的半绝缘材料条
公开(公告)号：US07977744B2
公开(公告)日：2011-07-12
申请号：US11862396
申请日：2007-09-27
申请人： Steven Sapp , Peter H. Wilson
发明人： Steven Sapp , Peter H. Wilson
IPC分类号： H01L29/76 , H01L29/94 , H01L29/00
CPC分类号： H01L29/7811 , H01L29/0619 , H01L29/0634 , H01L29/0649 , H01L29/0653 , H01L29/405 , H01L29/407 , H01L29/7802 , H01L29/7813
摘要： A MOSFET comprises a first semiconductor region having a first surface, a first insulation-filled trench region extending from the first surface into the first semiconductor region, and strips of semi-insulating material along the sidewalls of the first insulation-filled trench region. The strips of semi-insulating material are insulated from the first semiconductor region.
摘要翻译： MOSFET包括具有第一表面的第一半导体区域，从第一表面延伸到第一半导体区域的第一绝缘填充沟槽区域和沿着第一绝缘填充沟槽区域的侧壁的半绝缘材料条带。半绝缘材料的条与第一半导体区绝缘。

3. 发明授权

US07576388B1 Trench-gate LDMOS structures 有权
标题翻译：沟槽门LDMOS结构
公开(公告)号：US07576388B1
公开(公告)日：2009-08-18
申请号：US10951259
申请日：2004-09-26
申请人： Peter H. Wilson , Steven Sapp
发明人： Peter H. Wilson , Steven Sapp
IPC分类号： H01L29/78
CPC分类号： H01L29/0847 , H01L29/0634 , H01L29/402 , H01L29/407 , H01L29/4175 , H01L29/41766 , H01L29/41775 , H01L29/4236 , H01L29/42368 , H01L29/66621 , H01L29/66659 , H01L29/7831 , H01L29/7834 , H01L29/7835
摘要： MOSFET devices for RF applications that use a trench-gate in place of the lateral gate conventionally used in lateral MOSFET devices. A trench-gate provides devices with a single, short channel for high frequency gain. Embodiments of the present invention provide devices with an asymmetric oxide in the trench gate, as well as LDD regions that lower the gate-drain capacitance for improved RF performance. Refinements to these TG-LDMOS devices include placing a source-shield conductor below the gate and placing two gates in a trench-gate region. These improve device high-frequency performance by decreasing gate-to-drain capacitance. Further refinements include adding a charge balance region to the LDD region and adding source-to-substrate or drain-to-substrate vias.
摘要翻译：用于RF应用的MOSFET器件，其使用沟槽栅极代替横向MOSFET器件中常规使用的横向栅极。沟槽栅为高频增益提供单通道，短通道。本发明的实施例提供了在沟槽栅极中具有不对称氧化物的器件，以及降低栅极 - 漏极电容以提高RF性能的LDD区域。对这些TG-LDMOS器件的改进包括将源极屏蔽导体放置在栅极下方并将两个栅极放置在沟槽栅极区域中。这些通过降低栅极 - 漏极电容来提高器件的高频性能。进一步的改进包括向LDD区域添加电荷平衡区域并添加源到衬底或漏极到衬底的通孔。

4. 发明申请

US20080135931A1 Power Semiconductor Devices Having Termination Structures and Methods of Manufacture 有权
标题翻译：具有终端结构和制造方法的功率半导体器件
公开(公告)号：US20080135931A1
公开(公告)日：2008-06-12
申请号：US12032123
申请日：2008-02-15
申请人： Ashok Challa , Alan Elbanhawy , Thomas E. Grebs , Nathan L. Kraft , Dean E. Probst , Rodney S. Ridlay , Steven P. Sapp , Qi Wang , Chongman Yun , J.G. Lee , Peter H. Wilson , Joseph A. Yedinak , J.Y. Jung , H.C. Jang , Babak S. Sanl , Richard Stokes , Gary M. Dolny , John Mytych , Becky Losee , Adam Selsley , Robert Herrick , James J. Murphy , Gordon K. Madson , Bruce D. Marchant , Christopher L. Rexer , Christopher B. Kocon , Debra S. Woolsey
发明人： Ashok Challa , Alan Elbanhawy , Thomas E. Grebs , Nathan L. Kraft , Dean E. Probst , Rodney S. Ridlay , Steven P. Sapp , Qi Wang , Chongman Yun , J.G. Lee , Peter H. Wilson , Joseph A. Yedinak , J.Y. Jung , H.C. Jang , Babak S. Sanl , Richard Stokes , Gary M. Dolny , John Mytych , Becky Losee , Adam Selsley , Robert Herrick , James J. Murphy , Gordon K. Madson , Bruce D. Marchant , Christopher L. Rexer , Christopher B. Kocon , Debra S. Woolsey
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/407 , H01L21/26586 , H01L21/3065 , H01L21/30655 , H01L21/31116 , H01L21/6835 , H01L23/4952 , H01L23/49816 , H01L29/0623 , H01L29/0634 , H01L29/0653 , H01L29/0661 , H01L29/0696 , H01L29/1095 , H01L29/165 , H01L29/402 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/4238 , H01L29/4933 , H01L29/495 , H01L29/66348 , H01L29/66734 , H01L29/7396 , H01L29/7802 , H01L29/7804 , H01L29/7805 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/7815 , H01L29/7828 , H01L29/7831 , H01L2221/6834 , H01L2221/68363 , H01L2224/16 , H01L2924/01012 , H01L2924/01019 , H01L2924/01078 , H01L2924/10253 , H01L2924/12032 , H01L2924/1301 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15311 , H01L2924/1532 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H02M3/00 , H02M3/33592 , H02M7/48 , Y02B70/1475 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region, source regions having the first conductivity type formed in the well region adjacent the active trench, and a first termination trench extending below the well region and disposed at an outer edge of an active region of the device. The sidewalls and bottom of the active trench are lined with dielectric material, and substantially filled with a first conductive layer forming an upper electrode and a second conductive layer forming a lower electrode, the upper electrode being disposed above the lower electrode and separated therefrom by inter-electrode dielectric material. The first termination trench can be lined with a layer of dielectric material that is thicker than the dielectric material lining the sidewalls of the active trench, and is substantially filled with conductive material.
摘要翻译：半导体功率器件包括第一导电类型的漂移区域，在漂移区域上方延伸并且具有与第一导电类型相反的第二导电类型的阱区域，延伸穿过阱区域并进入漂移区域的有源沟槽，源极区域具有形成在邻近有源沟槽的阱区中的第一导电类型，以及在阱区下延伸并设置在器件的有源区的外边缘处的第一端接沟槽。有源沟槽的侧壁和底部衬有介电材料，并且基本上填充有形成上电极的第一导电层和形成下电极的第二导电层，上电极设置在下电极之上，电介质材料。第一端接沟槽可以衬有一层电介质材料，其比在有源沟槽侧壁上的电介质材料更厚，并且基本上填充有导电材料。

5. 外观设计

USD290221S Stand for a hot air gun 失效
公开(公告)号：USD290221S
公开(公告)日：1987-06-09
申请号：US657396
申请日：1984-10-03
申请人： Peter H. Wilson , Laurence T. Cunningham
设计人： Peter H. Wilson , Laurence T. Cunningham

6. 发明授权

US4359328A Inverted pressure swing adsorption process 失效
标题翻译：倒置变压吸附过程
公开(公告)号：US4359328A
公开(公告)日：1982-11-16
申请号：US310038
申请日：1981-10-09
申请人： Peter H. Wilson
发明人： Peter H. Wilson
IPC分类号： B01D53/047 , C01B21/04 , C07C7/12 , B01D53/04
CPC分类号： C07C7/12 , B01D53/047 , C01B21/045 , B01D2253/102 , B01D2256/10 , B01D2256/12 , B01D2256/24 , B01D2256/245 , B01D2257/102 , B01D2257/7022 , B01D2257/7025 , B01D2259/40037 , B01D2259/40052 , B01D2259/40064 , B01D2259/40066 , B01D2259/40081 , B01D2259/403 , B01D2259/404 , Y02C20/20 , Y02P20/156
摘要： A gas mixture, having a more readily adsorbable gas component to be recovered and a less readily adsorbable gas component, is introduced to an adsorption zone at low pressure, with the pressure being increased prior to purging the less readily adsorbable gas component from the adsorption zone at high pressure. Upon depressurization, the readily adsorbable gas component is recovered at enhanced purity levels. In multiple adsorption zone operations, each zone is passed through the low pressure adsorption, pressurization, high pressure purging and depressurization cycle, in sequence, with pressure equalization steps advantageously being employed between the zones to be pressurized following adsorption and those being depressurized following purging. The invention can be used to recover nitrogen of enhanced purity from air, and to recover high purity methane from mixtures thereof with nitrogen.
摘要翻译：将具有更易吸附的待回收气体成分和较不易吸附的气体成分的气体混合物在低压下引入吸附区域，在从吸附区域吹扫不易吸附的气体成分之前，压力增加在高压下。减压后，以较高的纯度水平回收容易吸附的气体组分。在多个吸附区操作中，每个区域依次通过低压吸附，加压，高压清洗和减压循环，其中压力平衡步骤有利地在吸附后被加压的区域和在清洗之后被减压的区域之间采用。本发明可用于从空气中回收增强纯度的氮气，并从氮气与其混合物中回收高纯度甲烷。

7. 发明申请

US20130238247A1 METHODS OF HYDROCARBON DETECTION USING SPECTRA DOMINANT FREQUENCY AND MEASURES OF ENERGY DECAY ON THE LOW SIDE AND HIGH SIDE OF SPECTRA DOMINANT FREQUENCY 有权
标题翻译：使用光谱主导频率进行烃类检测的方法和能量衰减措施在频域主要频率的低侧和高侧
公开(公告)号：US20130238247A1
公开(公告)日：2013-09-12
申请号：US13884435
申请日：2011-10-12
申请人： Robert W. Wiley , Scott W. Peters , Peter H. Wilson
发明人： Robert W. Wiley , Scott W. Peters , Peter H. Wilson
IPC分类号： G01V1/30
CPC分类号： G01V1/307 , G01V1/364
摘要： A method for detecting hydrocarbons including obtaining seismic trace data for a region of interest; processing, using a processor, the seismic trace data to calculate a signal spectrum for each of a plurality of locations in the region of interest; calculating a dominant frequency of the signal spectrum; calculating at least one measure of energy decay above the dominant frequency, calculating at least one measure of energy decay below the dominant frequency, and calculating at least one measure spectral shape of the signal spectrum, and locating a hydrocarbon reservoir in the region of interest using the at least one measure of energy decay below the dominant frequency, the at least one measure of energy decay above dominant frequency and the dominant frequency; or locating a hydrocarbon reservoir in the region of interest using the at least one measure of energy decay below the dominant frequency and the at least one measure of energy decay above dominant frequency; or and locating a hydrocarbon reservoir in the region of interest using the at least one measure of energy decay below the dominant frequency and the dominant frequency; or locating a hydrocarbon reservoir in the region of interest using the at least one measure of spectral shape and the dominant frequency.
摘要翻译：一种用于检测烃的方法，包括获得感兴趣区域的地震迹线数据; 使用处理器处理地震迹线数据以计算感兴趣区域中的多个位置中的每一个的信号频谱; 计算信号频谱的主频; 计算高于主频率的能量衰减的至少一个量度，计算低于主频率的能量衰减的至少一个测量值，以及计算信号频谱的至少一个测量频谱形状，以及使用能量衰减低于主频率的至少一个量度，超过主频率的能量衰减的至少一个测量和主频率; 或者使用低于主频率的能量衰减的至少一个测量值和在主频率以上的能量衰减的至少一个测量值将所述感兴趣区域中的烃储存器定位; 或者使用所述主要频率和所述主频率以下的所述至少一种能量衰减测量来将所述感兴趣区域中的烃储存器定位; 或使用光谱形状和主要频率的至少一个量度来将感兴趣区域中的烃储存器定位。

8. 发明申请

US20120248528A1 TRENCH-GATE LDMOS STRUCTURES 审中-公开
标题翻译： TRENCH-GATE LDMOS结构
公开(公告)号：US20120248528A1
公开(公告)日：2012-10-04
申请号：US13492473
申请日：2012-06-08
申请人： Peter H. Wilson , Steven Sapp
发明人： Peter H. Wilson , Steven Sapp
IPC分类号： H01L29/78
CPC分类号： H01L29/0847 , H01L29/0634 , H01L29/402 , H01L29/407 , H01L29/4175 , H01L29/41766 , H01L29/41775 , H01L29/4236 , H01L29/42368 , H01L29/66621 , H01L29/66659 , H01L29/7831 , H01L29/7834 , H01L29/7835
摘要： MOSFET devices for RF applications that use a trench-gate in place of the lateral gate conventionally used in lateral MOSFET devices. A trench-gate provides devices with a single, short channel for high frequency gain. Embodiments of the present invention provide devices with an asymmetric oxide in the trench gate, as well as LDD regions that lower the gate-drain capacitance for improved RF performance. Refinements to these TG-LDMOS devices include placing a source-shield conductor below the gate and placing two gates in a trench-gate region. These improve device high-frequency performance by decreasing gate-to-drain capacitance. Further refinements include adding a charge balance region to the LDD region and adding source-to-substrate or drain-to-substrate vias.
摘要翻译：用于RF应用的MOSFET器件，其使用沟槽栅极代替横向MOSFET器件中常规使用的横向栅极。沟槽栅为高频增益提供单通道，短通道。本发明的实施例提供了在沟槽栅极中具有不对称氧化物的器件，以及降低栅极 - 漏极电容以提高RF性能的LDD区域。对这些TG-LDMOS器件的改进包括将源极屏蔽导体放置在栅极下方并将两个栅极放置在沟槽栅极区域中。这些通过降低栅极 - 漏极电容来提高器件的高频性能。进一步的改进包括向LDD区域添加电荷平衡区域并添加源到衬底或漏极到衬底的通孔。

9. 发明申请

US20110284955A1 FIELD EFFECT TRANSISTOR WITH TRENCH FILLED WITH INSULATING MATERIAL AND STRIPS OF SEMI-INSULATING MATERIAL ALONG TRENCH SIDEWALLS 审中-公开
标题翻译：具有绝缘材料的紧固件的场效应晶体管和半导体绝缘材料的条纹
公开(公告)号：US20110284955A1
公开(公告)日：2011-11-24
申请号：US13114253
申请日：2011-05-24
申请人： Steven Sapp , Peter H. Wilson
发明人： Steven Sapp , Peter H. Wilson
IPC分类号： H01L27/092
CPC分类号： H01L29/7811 , H01L29/0619 , H01L29/0634 , H01L29/0649 , H01L29/0653 , H01L29/405 , H01L29/407 , H01L29/7802 , H01L29/7813
摘要： In accordance with an embodiment of the present invention, a MOSFET includes a first semiconductor region having a first surface, a first insulation-filled trench region extending from the first surface into the first semiconductor region, and strips of semi-insulating material along the sidewalls of the first insulation-filled trench region. The strips of semi-insulating material may be insulated from the first semiconductor region.
摘要翻译：根据本发明的实施例，MOSFET包括具有第一表面的第一半导体区域，从第一表面延伸到第一半导体区域的第一绝缘填充沟槽区域和沿着侧壁的半绝缘材料条带的第一绝缘填充沟槽区域。半绝缘材料的条可以与第一半导体区域绝缘。

10. 发明授权

US07982265B2 Trenched shield gate power semiconductor devices and methods of manufacture 有权
标题翻译：宽屏蔽栅功率半导体器件及其制造方法
公开(公告)号：US07982265B2
公开(公告)日：2011-07-19
申请号：US12018166
申请日：2008-01-22
申请人： Ashok Challa , Alan Elbanhawy , Steven P. Sapp , Peter H. Wilson , Babak S. Sani , Christopher B. Kocon
发明人： Ashok Challa , Alan Elbanhawy , Steven P. Sapp , Peter H. Wilson , Babak S. Sani , Christopher B. Kocon
IPC分类号： H01L29/78
CPC分类号： H01L29/407 , H01L21/26586 , H01L21/3065 , H01L21/30655 , H01L21/31116 , H01L21/6835 , H01L23/4952 , H01L23/49816 , H01L29/0623 , H01L29/0634 , H01L29/0653 , H01L29/0661 , H01L29/0696 , H01L29/1095 , H01L29/165 , H01L29/402 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/4238 , H01L29/4933 , H01L29/495 , H01L29/66348 , H01L29/66734 , H01L29/7396 , H01L29/7802 , H01L29/7804 , H01L29/7805 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/7815 , H01L29/7828 , H01L29/7831 , H01L2221/6834 , H01L2221/68363 , H01L2224/16 , H01L2924/01012 , H01L2924/01019 , H01L2924/01078 , H01L2924/10253 , H01L2924/12032 , H01L2924/1301 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15311 , H01L2924/1532 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/3025 , H02M3/00 , H02M3/33592 , H02M7/48 , Y02B70/1475 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region. The active trench, which includes sidewalls and bottom lined with dielectric material, is substantially filled with a first conductive layer and a second conductive layer. The second conductive layer forms a gate electrode and is disposed above the first conductive layer and is separated from the first conductive layer by an inter-electrode dielectric material. The device also includes source regions having the first conductivity type formed inside the well region and adjacent the active trench and a charge control trench that extends deeper into the drift region than the active trench and is substantially filled with material to allow for vertical charge control in the drift region. The charge control trench can be lined with a layer of dielectric material and substantially filled with conductive material. The active trench can include a second shield electrode made of conductive material disposed below the first shield electrode. The first conductive layer inside the active trench can form a secondary gate electrode that is configured to be electrically biased to a desired potential. The semiconductor device can also include a Schottky structure formed between the charge control trench and a second adjacent charge control trench.
摘要翻译：半导体功率器件包括第一导电类型的漂移区域，在漂移区域上方延伸并且具有与第一导电类型相反的第二导电类型的阱区域，延伸穿过阱区域并进入漂移区域的有源沟槽。主要沟槽包括侧壁和衬底与介电材料的底部，其基本上被第一导电层和第二导电层填充。第二导电层形成栅极，并且设置在第一导电层的上方，并且通过电极间电介质材料与第一导电层分离。该器件还包括形成在阱区内并且邻近有源沟槽的第一导电类型的源极区域以及充电控制沟槽，该电荷控制沟槽比有源沟槽更深地延伸到漂移区域中，并且基本上填充有材料以允许垂直电荷控制漂移区域。电荷控制沟槽可以衬有介电材料层并且基本上填充有导电材料。有源沟槽可以包括由设置在第一屏蔽电极下方的导电材料制成的第二屏蔽电极。有源沟槽内的第一导电层可以形成辅助栅电极，其被配置为电偏置到期望的电位。半导体器件还可以包括形成在电荷控制沟槽和第二相邻电荷控制沟槽之间的肖特基结构。

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