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    • 3. 发明申请
    • OUT-OF-PLANE TRAVEL RESTRICTION STRUCTURES
    • 超平面旅行限制结构
    • US20140042869A1
    • 2014-02-13
    • US14112091
    • 2011-06-28
    • Donald J. MilliganRodney L. AlleyPeter G. HartwellRobet G. Walmsley
    • Donald J. MilliganRodney L. AlleyPeter G. HartwellRobet G. Walmsley
    • H02N1/00B81C1/00
    • H02N1/00B81B3/0051B81B3/0054B81B2201/0235B81B2203/053B81C1/00388G01P2015/0871H01H3/60H01L29/84
    • The present disclosure includes structures and methods of forming structures for restricting out-of-plane travel. One example of forming such structures includes providing a first wafer 100, 220 comprising a bond layer of a particular thickness 101, 221 on a surface of a substrate material 105, 225, removing the bond layer 101, 221 in a first area 103-1, 103-2, 223 to expose the surface of the substrate material 105, 225, applying a mask to at least a portion of a remaining bond layer 109-1, 109-4, 229-1, 229-3 and a portion of the exposed surface of the substrate material in the first area 109-2, 109-3, 229-2 to form a second area exposed on the surface of the substrate material 105, 225, etching the second area to form a cavity 110, 230 in the substrate material 105, 225 and the bond layer 101, 221, and forming by the etching, in the cavity 110, 230, a structure 113-1, 113-2, 233 for restricting out-of-plane travel, where the structure 113-1, 113-2, 233 has a particular height from a bottom of the cavity 115, 235 determined by the particular thickness of the bond layer 101, 221.
    • 本公开包括形成用于限制飞机外行进的结构的结构和方法。 形成这种结构的一个实例包括提供第一晶片100,220,第一晶片100,220包括在衬底材料105,225的表面上的特定厚度101,221的接合层,在第一区域103-1-1中去除接合层101,221 ,103-2,223,以暴露衬底材料105,225的表面,将掩模施加到剩余结合层109-1,109-4,229-1,229-3的至少一部分,以及一部分 在第一区域109-2,103-3,229-2中的衬底材料的暴露表面,以形成暴露在衬底材料105,225的表面上的第二区域,蚀刻第二区域以形成空腔110,230 在衬底材料105,225和接合层101,221中,并且通过蚀刻形成在空腔110,230中的用于限制平面外行进的结构113-1,113-2,233,其中 结构113-1,113-2,233具有由空腔115,235的底部由结合层101,221的特定厚度确定的特定高度。