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    • 4. 发明授权
    • Vanadium-dioxide front-end advanced shutter technology
    • 二氧化钒前端先进快门技术
    • US08067996B2
    • 2011-11-29
    • US12291874
    • 2008-11-14
    • Christopher E. HillmanJeffrey F. De NataleJonathan B. HackerJ. Aiden HigginsPaul H. Kobrin
    • Christopher E. HillmanJeffrey F. De NataleJonathan B. HackerJ. Aiden HigginsPaul H. Kobrin
    • H03G11/04H01B1/10H04B1/18G01S7/529
    • H01P1/10
    • A vanadium dioxide front-end advanced shutter device. The electronic shutter device is designed to protect receiver front-ends and other sensitive circuits from HPM pulse events such as HPM weapons, directed energy weapons, or EMPs. The shutter incorporates a transition material such as thin-film vanadium oxide (VOX) materials that exhibit a dramatic change in resistivity as their temperature is varied over a narrow range near a known critical temperature. A high-energy pulse causes ohmic heating in the shutter device, resulting in a state change in the VOX material when the critical temperature is exceeded. During the state change the VOX material transitions from an insulating state (high resistance) to a reflective state (low resistance). In the insulating state, the shutter device transmits the majority of the signal. In the reflective state, most of the signal is reflected and prevented from passing into electronics on the output side of the shutter device.
    • 二氧化钒前端先进的快门装置。 电子快门装置设计用于保护接收机前端和其他敏感电路免受诸如HPM武器,定向能量武器或EMP之类的HPM脉冲事件。 快门结合了诸如薄膜钒氧化物(VOX)材料的过渡材料,当材料的温度在已知的临界温度附近的窄范围内变化时,其表现出显着的电阻率变化。 高能量脉冲在快门装置中引起欧姆加热,导致超过临界温度时VOX材料的状态变化。 在状态改变期间,VOX材料从绝缘状态(高电阻)转变为反射状态(低电阻)。 在绝缘状态下,快门装置传输大部分信号。 在反射状态下,大多数信号被反射并防止进入快门装置输出侧的电子装置。
    • 5. 发明申请
    • Vanadium-dioxide front-end advanced shutter technology
    • 二氧化钒前端先进快门技术
    • US20100123532A1
    • 2010-05-20
    • US12291874
    • 2008-11-14
    • Christopher E. HillmanJeffrey F. De NataleJonathan B. HackerJ. Aiden HigginsPaul H. Kobrin
    • Christopher E. HillmanJeffrey F. De NataleJonathan B. HackerJ. Aiden HigginsPaul H. Kobrin
    • H01P1/10
    • H01P1/10
    • A vanadium dioxide front-end advanced shutter device. The electronic shutter device is designed to protect receiver front-ends and other sensitive circuits from HPM pulse events such as HPM weapons, directed energy weapons, or EMPs. The shutter incorporates a transition material such as thin-film vanadium oxide (VOX) materials that exhibit a dramatic change in resistivity as their temperature is varied over a narrow range near a known critical temperature. A high-energy pulse causes ohmic heating in the shutter device, resulting in a state change in the VOX material when the critical temperature is exceeded. During the state change the VOX material transitions from an insulating state (high resistance) to a reflective state (low resistance). In the insulating state, the shutter device transmits the majority of the signal. In the reflective state, most of the signal is reflected and prevented from passing into electronics on the output side of the shutter device.
    • 二氧化钒前端先进的快门装置。 电子快门装置设计用于保护接收机前端和其他敏感电路免受诸如HPM武器,定向能量武器或EMP之类的HPM脉冲事件。 快门结合了诸如薄膜钒氧化物(VOX)材料的过渡材料,当材料的温度在已知的临界温度附近的窄范围内变化时,其表现出显着的电阻率变化。 高能量脉冲在快门装置中引起欧姆加热,导致超过临界温度时VOX材料的状态变化。 在状态改变期间,VOX材料从绝缘状态(高电阻)转变为反射状态(低电阻)。 在绝缘状态下,快门装置传输大部分信号。 在反射状态下,大多数信号被反射并防止进入快门装置输出侧的电子装置。
    • 7. 发明授权
    • Acoustic isolator having a high impedance layer of hafnium oxide
    • 具有高阻抗层氧化铪的隔振器
    • US5646583A
    • 1997-07-08
    • US582686
    • 1996-01-04
    • Charles W. SeaburyPaul H. KobrinJeffrey F. DeNatale
    • Charles W. SeaburyPaul H. KobrinJeffrey F. DeNatale
    • H04R17/00H01L41/09H03H9/17H03H9/54H03H9/00
    • H03H9/175
    • A resonant acoustic isolator supports a thin film acoustic resonator comprising a layer of piezoelectric material having top and bottom electrical contacts. The resonant acoustic isolator comprises at least one pair of layers of materials having different acoustic impedances. The isolator materials are deposited in alternating layers of high and low impedance material, with each layer having a thickness of 1/4 acoustic wavelength at resonant frequency. Silicon dioxide (SiO.sub.2) is preferred for the low impedance material because it is ubiquitous in the semiconductor industry, it has relatively low acoustic impedance with very low intrinsic acoustic loss, and it can be deposited using a variety of convenient methods. Hafnium oxide (HfO.sub.2) is preferred for the high acoustic impedance material because it can be deposited by evaporation to form a hard, dense dielectric having a relatively high acoustic impedance. Deposition of an entire stack of alternating SiO.sub.2 and HfO.sub.2 layers can be performed in the same chamber using electron beam deposition techniques for low cost production.
    • 谐振隔声器支撑包括具有顶部和底部电触点的压电材料层的薄膜声谐振器。 谐振隔音器包括具有不同声阻抗的至少一对材料层。 隔离材料沉积在高阻抗材料和低阻抗材料的交替层中,每个层的谐振频率具有+ E,fra 1/4 + EE声波长的厚度。 对于低阻抗材料,二氧化硅(SiO 2)是优选的,因为它在半导体工业中是普遍存在的,它具有相当低的声阻抗,具有非常低的固有声学损失,并且可以使用各种方便的方法进行沉积。 氧化铪(HfO 2)优选用于高声阻抗材料,因为它可以通过蒸发沉积以形成具有相对较高声阻抗的硬致密电介质。 可以使用电子束沉积技术在相同的室中进行交替的SiO 2和HfO 2层的整个堆叠的沉积,用于低成本生产。