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1. 实用新型

TWM527062U 可堆疊式的瓦斯鋼瓶有权
简体标题：可堆栈式的瓦斯钢瓶
公开(公告)号：TWM527062U
公开(公告)日：2016-08-11
申请号：TW105204663
申请日：2016-04-01
申请人：台灣保安工業股份有限公司 , TAIWAN PAO-AN INDUSTRIAL CO.,LTD
发明人：林萌利
IPC分类号： F17C1/00

2. 实用新型

TWM242610U 避震磁浮墊 SHOCK ABSORBING AND MAGNETIC LEVITATING CUSHION 失效
简体标题：避震磁浮垫 SHOCK ABSORBING AND MAGNETIC LEVITATING CUSHION
公开(公告)号：TWM242610U
公开(公告)日：2004-09-01
申请号：TW092216718
申请日：2003-09-17
申请人：莊伯安 CHUANG, PAO-AN
发明人：莊伯安 CHUANG, PAO-AN
IPC分类号： F16F , G11B , F16M
摘要：一種避震磁浮墊，係作為影音設備的支撐腳座，包括一外殼、一導磁件、兩環狀磁鐵以及一殼蓋；藉由外殼內置入兩互斥對設之磁鐵及填有吸震材料之導磁件，再用殼蓋蓋妥，因磁鐵同極相斥之原理，使上述兩磁鐵間形成磁浮現象並令殼蓋與外殼間具伸縮之空間，而使該磁浮墊具有隔震、避震之效果。
简体摘要：一种避震磁浮垫，系作为影音设备的支撑脚座，包括一外壳、一导磁件、两环状磁铁以及一壳盖；借由外壳内置入两互斥对设之磁铁及填有吸震材料之导磁件，再用壳盖盖妥，因磁铁同极相斥之原理，使上述两磁铁间形成磁浮现象并令壳盖与外壳间具伸缩之空间，而使该磁浮垫具有隔震、避震之效果。

3. 发明授权

US06724250B2 Transformer of power-amplifier module for an audio device 失效
标题翻译：用于音频设备的功率放大器模块的变压器
公开(公告)号：US06724250B2
公开(公告)日：2004-04-20
申请号：US10166672
申请日：2002-06-12
申请人： Pao-An Chuang
发明人： Pao-An Chuang
IPC分类号： H03F100
CPC分类号： H03F3/211 , H03F3/45475 , H03F2200/541 , H03F2203/45652
摘要： A transformer of power-amplifier module for an audio device includes a casing having a first plug and a second plug formed thereon. In the casing, there is an amplifying circuit having an input electrically connected to the first plug and an output electrically connected to the second plug of the casing. The amplifying circuit terminates in a transformer at the output. Furthermore, the transformer is adjustable so as to control the amplitude of output voltage of the transformer of power-amplifier module.
摘要翻译：用于音频装置的功率放大器模块的变压器包括具有形成在其上的第一插头和第二插头的壳体。在壳体中，存在放大电路，其具有电连接到第一插头的输入端和与壳体的第二插头电连接的输出。放大电路终止于输出端的变压器。此外，变压器可调，以控制功率放大器模块变压器的输出电压幅值。

4. 发明申请

US20080308868A1 HIGH VOLTAGE METAL OXIDE SEMICONDUCTOR TRANSISTOR AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：高压金属氧化物半导体晶体管及其制造方法
公开(公告)号：US20080308868A1
公开(公告)日：2008-12-18
申请号：US11763911
申请日：2007-06-15
申请人： Rong-Tzong Wu , Guan-Quan Chen , Hsin Tai , Am-Tay Luy , Pao-An Chang
发明人： Rong-Tzong Wu , Guan-Quan Chen , Hsin Tai , Am-Tay Luy , Pao-An Chang
IPC分类号： H01L23/62 , H01L21/336
CPC分类号： H01L29/7834 , H01L21/2255 , H01L29/0653 , H01L29/66568
摘要： A high voltage metal oxide semiconductor includes a doped substrate, two first isolation structures, a gate structure, a source region, a drain region, two second isolation structures, and two drift regions. The two first isolation structures are respectively disposed in the doped substrate. The gate structure is disposed between parts of the two first isolation structures on the doped substrate. The source region and the drain region are respectively disposed beside one side of each of the two first isolation structures in the doped substrate. The top surface of the second isolation structure is smaller than the bottom surface of the first isolation structure. The two drift regions are respectively disposed in the doped substrate, enclosing the source region and the drain region, the two first isolation structures and the second isolation structures.
摘要翻译：高电压金属氧化物半导体包括掺杂衬底，两个第一隔离结构，栅极结构，源极区，漏极区，两个第二隔离结构和两个漂移区。两个第一隔离结构分别设置在掺杂衬底中。栅极结构设置在掺杂衬底上的两个第一隔离结构的部分之间。源极区域和漏极区域分别设置在掺杂衬底中的两个第一隔离结构中的每一个的旁边。第二隔离结构的顶表面小于第一隔离结构的底表面。两个漂移区分别设置在掺杂衬底中，包围源极区和漏极区，两个第一隔离结构和第二隔离结构。

5. 发明申请

US20060156361A1 Remote viewing system 审中-公开
标题翻译：远程查看系统
公开(公告)号：US20060156361A1
公开(公告)日：2006-07-13
申请号：US11328647
申请日：2006-01-10
申请人： Walter Wang , Shirley Wang , Pao An
发明人： Walter Wang , Shirley Wang , Pao An
IPC分类号： H04N7/173 , H04N7/18 , H04N9/47
CPC分类号： H04N7/186
摘要： A remote viewing system is disclosed for providing video and/or audio surveillance of an entry or doorway of a building. The system is provided within the panels of the entry or doorway door. A video camera is positioned within the panels to obtain video images of the entryway or doorway and to transmit them via Bluetooth wireless connection to a remote viewing station. The Wireless driver for the camera can be located in or adjacent to the door panel. Video and audio data can be transmitted from the driver to any of a variety of Bluetooth enabled electronic devices, including PCs, PDAs, cell phones, and the like.
摘要翻译：公开了一种用于提供对建筑物的入口或门口的视频和/或音频监视的远程观察系统。该系统设置在入口或门口门的面板内。视频摄像机位于面板内以获得入口或门口的视频图像，并通过蓝牙无线连接将其传输到远程观察站。相机的无线驱动程序可以位于门板或靠近门板。视频和音频数据可以从驱动器传输到各种支持蓝牙的电子设备中的任何一种，包括PC，PDA，蜂窝电话等。

6. 发明申请

US20050082447A1 SHOCK ABSORBING AND MAGNETIC LEVITATING CUSHION 失效
标题翻译：震动吸收和磁力吸引力
公开(公告)号：US20050082447A1
公开(公告)日：2005-04-21
申请号：US10684674
申请日：2003-10-15
申请人： Pao-An Chuang
发明人： Pao-An Chuang
IPC分类号： F16F6/00 , F16F15/03 , F16M11/20 , H04R1/02
CPC分类号： F16F6/005 , F16F2230/0047 , H04R1/026
摘要： A shock absorbing and magnetic levitating cushion used as a supporting pedestal for an audio-video equipment, the cushion including a housing, two mutually excluded annular magnets, a magnetic conductive member and a cover. The housing has two annular magnets mutually excluded and opposite to each other, and has a magnetic conductive member filled with material of high specific weight. The housing is covered with a cover. According to the principle of mutual exclusion between two poles of two magnets of identical polarity, the two annular magnets undergo a magnetic-levitating phenomenon and are provided therebetween with a space for movement, and the magnetic levitating cushion gets an effect of shock isolation and shock absorbing.
摘要翻译：作为用于音视频设备的支撑基座的减震和磁悬浮缓冲垫，所述衬垫包括壳体，两个相互排斥的环形磁体，导磁构件和盖。壳体具有相互排斥并彼此相对的两个环形磁体，并且具有填充有高比重材料的导电构件。房屋盖上盖子。根据相同极性的两个磁铁的两极之间相互排斥的原理，两个环形磁体经历磁悬浮现象，并在它们之间设置有一个运动空间，磁悬浮缓冲垫具有冲击隔离和冲击的作用吸收。

7. 发明授权

US11045370B1 Elevation-type armrest 有权
公开(公告)号：US11045370B1
公开(公告)日：2021-06-29
申请号：US16858741
申请日：2020-04-27
申请人： KING PAO AN CO., LTD.
发明人： Yu-Ming Tu
IPC分类号： A47C1/03 , A47C7/54 , A61G5/12 , A61G5/10
摘要： An elevation-type armrest includes a driving assembly and a cushioning assembly. The driving assembly includes a worm, a crank, an axle, a shaft, a worm gear, two toothed wheels and two pinions. The crank is connected to the worm. The axle extends perpendicular to the worm. The worm gear is connected to the axle and engaged with the worm. The first toothed wheel is connected to the axle. The shaft extends parallel to the axle. The second toothed wheel is connected to the shaft and engaged with the first toothed wheel. The pinions are connected to two ends of the shaft. The cushioning assembly includes a supporting tube connected to two racks. Each of the racks includes a toothed portion movably located in a corresponding one of the cylinders and engaged with a corresponding one of the pinions.

8. 发明授权

US08896021B2 Integrated circuit device 有权
标题翻译：集成电路器件
公开(公告)号：US08896021B2
公开(公告)日：2014-11-25
申请号：US13232048
申请日：2011-09-14
申请人： Chung-I Huang , Pao-An Chang , Ming-Tsung Lee
发明人： Chung-I Huang , Pao-An Chang , Ming-Tsung Lee
IPC分类号： H01L29/66 , H01L27/088 , H01L29/78 , H01L27/06 , H01L29/739 , H01L29/06 , H01L29/08 , H01L29/40
CPC分类号： H01L27/0623 , H01L27/088 , H01L29/0634 , H01L29/0847 , H01L29/404 , H01L29/7393 , H01L29/7835
摘要： An integrated circuit device includes a semiconductor substrate and a first transistor and a second transistor constructed in the semiconductor substrate. The first transistor has a first operating voltage higher than a second operating voltage of a second transistor. The first transistor includes a first drain structure, a first source structure, an isolation structure and a first gate structure. The first source structure includes a high voltage first-polarity well region, a first-polarity body region, a heavily doped first-polarity region, a second-polarity grade region and a heavily doped second-polarity region. The heavily doped second-polarity region is surrounded by the second-polarity grade region. The second-polarity grade region is surrounded by the first-polarity body region. The second transistor includes a second drain structure, a second source structure, a second gate structure and a first-polarity drift region. The first-polarity drift region and the first-polarity body region have the same dopant concentration.
摘要翻译：集成电路器件包括半导体衬底和构造在半导体衬底中的第一晶体管和第二晶体管。第一晶体管具有高于第二晶体管的第二工作电压的第一工作电压。第一晶体管包括第一漏极结构，第一源极结构，隔离结构和第一栅极结构。第一源结构包括高电压第一极性阱区，第一极性体区，重掺杂的第一极性区，第二极性等级区和重掺杂的第二极性区。重掺杂的第二极性区域被第二极性等级区域包围。第二极性等级区域由第一极性体区域包围。第二晶体管包括第二漏极结构，第二源极结构，第二栅极结构和第一极性漂移区。第一极性漂移区域和第一极性体区域具有相同的掺杂剂浓度。

9. 发明授权

US06938889B2 Shock absorbing and magnetic levitating cushion 失效
标题翻译：减震和磁悬浮垫
公开(公告)号：US06938889B2
公开(公告)日：2005-09-06
申请号：US10684674
申请日：2003-10-15
申请人： Pao-An Chuang
发明人： Pao-An Chuang
IPC分类号： F16F6/00 , F16F15/03 , F16M11/20 , H04R1/02
CPC分类号： F16F6/005 , F16F2230/0047 , H04R1/026
摘要： A shock absorbing and magnetic levitating cushion used as a supporting pedestal for an audio-video equipment, the cushion including a housing, two mutually excluded annular magnets, a magnetic conductive member and a cover. The housing has two annular magnets mutually excluded and opposite to each other, and has a magnetic conductive member filled with material of high specific weight. The housing is covered with a cover. According to the principle of mutual exclusion between two poles of two magnets of identical polarity, the two annular magnets undergo a magnetic-levitating phenomenon and are provided therebetween with a space for movement, and the magnetic levitating cushion gets an effect of shock isolation and shock absorbing.
摘要翻译：作为用于音视频设备的支撑基座的减震和磁悬浮缓冲垫，所述衬垫包括壳体，两个相互排斥的环形磁体，导磁构件和盖。壳体具有相互排斥并彼此相对的两个环形磁体，并且具有填充有高比重材料的导电构件。房屋盖上盖子。根据相同极性的两个磁铁的两极之间相互排斥的原理，两个环形磁体经历磁悬浮现象，并在它们之间设置有一个运动空间，磁悬浮垫具有冲击隔离和冲击的作用吸收。

10. 发明授权

US08890144B2 High voltage semiconductor device 有权
标题翻译：高压半导体器件
公开(公告)号：US08890144B2
公开(公告)日：2014-11-18
申请号：US13414723
申请日：2012-03-08
申请人： Pao-An Chang , Ching-Ming Lee , Te-Yuan Wu , Chih-Chung Wang , Wen-Fang Lee , Wei-Lun Hsu
发明人： Pao-An Chang , Ching-Ming Lee , Te-Yuan Wu , Chih-Chung Wang , Wen-Fang Lee , Wei-Lun Hsu
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00
CPC分类号： H01L27/0629 , H01L29/0634
摘要： A high voltage semiconductor device includes a substrate, an insulating layer positioned on the substrate, and a silicon layer positioned on the insulating layer. The silicon layer further includes at least a first doped strip, two terminal doped regions formed respectively at two opposite ends of the silicon layer and electrically connected to the first doped strip, and a plurality of second doped strips. The first doped strip and the terminal doped regions include a first conductivity type, the second doped strips include a second conductivity type, and the first conductivity type and the second conductivity type are complementary. The first doped strip and the second doped strips are alternately arranged.
摘要翻译：高电压半导体器件包括衬底，位于衬底上的绝缘层和位于绝缘层上的硅层。硅层还包括至少第一掺杂条，分别在硅层的两个相对端形成并电连接到第一掺杂条的两个端子掺杂区和多个第二掺杂条。第一掺杂带和端子掺杂区包括第一导电类型，第二掺杂条包括第二导电类型，第一导电类型和第二导电类型是互补的。交替布置第一掺杂条和第二掺杂条。

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