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1. 发明申请

US20130187225A1 HIGH VOLTAGE MOSFET DEVICE 有权
标题翻译：高电压MOSFET器件
公开(公告)号：US20130187225A1
公开(公告)日：2013-07-25
申请号：US13354439
申请日：2012-01-20
申请人： Chih-Chung WANG , Ming-Tsung Lee , Chung-I Huang , Shan-Shi Huang , Wen-Fang Lee , Te-Yuan Wu
发明人： Chih-Chung WANG , Ming-Tsung Lee , Chung-I Huang , Shan-Shi Huang , Wen-Fang Lee , Te-Yuan Wu
IPC分类号： H01L29/78
CPC分类号： H01L29/0878 , H01L21/266 , H01L29/0634 , H01L29/0696 , H01L29/402 , H01L29/404 , H01L29/66681 , H01L29/7816
摘要： A HV MOSFET device includes a substrate, a deep well region, a source/body region, a drain region, a gate structure, and a first doped region. The deep well region includes a boundary site and a middle site. The source/body region is formed in the deep well region and defines a channel region. The first doped region is formed in the deep well region and disposed under the gate structure, and having the first conductivity type. There is a first ratio between a dopant dose of the first doped region and a dopant dose of the boundary site of the deep well region. There is a second ratio between a dopant dose of the first doped region and a dopant dose of the middle site of the deep well region. A percentage difference between the first ratio and the second ratio is smaller than or equal to 5%.
摘要翻译： HV MOSFET器件包括衬底，深阱区，源极/主体区，漏极区，栅极结构和第一掺杂区。深井区域包括边界站点和中间站点。源/体区域形成在深阱区域中并且限定沟道区域。第一掺杂区域形成在深阱区域中并且设置在栅极结构下方并且具有第一导电类型。在第一掺杂区域的掺杂剂剂量和深阱区域的边界位点的掺杂剂剂量之间存在第一比率。在第一掺杂区域的掺杂剂剂量和深井区域的中间位点的掺杂剂剂量之间存在第二比率。第一比率和第二比率之间的百分比差小于或等于5％。

2. 发明授权

US08492835B1 High voltage MOSFET device 有权
标题翻译：高压MOSFET器件
公开(公告)号：US08492835B1
公开(公告)日：2013-07-23
申请号：US13354439
申请日：2012-01-20
申请人： Chih-Chung Wang , Ming-Tsung Lee , Chung-I Huang , Shan-Shi Huang , Wen-Fang Lee , Te-Yuan Wu
发明人： Chih-Chung Wang , Ming-Tsung Lee , Chung-I Huang , Shan-Shi Huang , Wen-Fang Lee , Te-Yuan Wu
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L29/0878 , H01L21/266 , H01L29/0634 , H01L29/0696 , H01L29/402 , H01L29/404 , H01L29/66681 , H01L29/7816
摘要： A HV MOSFET device includes a substrate, a deep well region, a source/body region, a drain region, a gate structure, and a first doped region. The deep well region includes a boundary site and a middle site. The source/body region is formed in the deep well region and defines a channel region. The first doped region is formed in the deep well region and disposed under the gate structure, and having the first conductivity type. There is a first ratio between a dopant dose of the first doped region and a dopant dose of the boundary site of the deep well region. There is a second ratio between a dopant dose of the first doped region and a dopant dose of the middle site of the deep well region. A percentage difference between the first ratio and the second ratio is smaller than or equal to 5%.
摘要翻译： HV MOSFET器件包括衬底，深阱区，源极/主体区，漏极区，栅极结构和第一掺杂区。深井区域包括边界站点和中间站点。源/体区域形成在深阱区域中并且限定沟道区域。第一掺杂区域形成在深阱区域中并且设置在栅极结构下方并且具有第一导电类型。在第一掺杂区域的掺杂剂剂量和深阱区域的边界位点的掺杂剂剂量之间存在第一比率。在第一掺杂区域的掺杂剂剂量和深井区域的中间位点的掺杂剂剂量之间存在第二比率。第一比率和第二比率之间的百分比差小于或等于5％。

3. 发明授权

US4551997A Laminated padlock 失效
标题翻译：层压挂锁
公开(公告)号：US4551997A
公开(公告)日：1985-11-12
申请号：US571593
申请日：1984-01-17
申请人： Chung-I Huang
发明人： Chung-I Huang
IPC分类号： E05B67/04 , E05B67/24 , E05B67/22
CPC分类号： E05B67/24 , E05B67/04 , Y10T70/459 , Y10T70/489
摘要： An improved laminated padlock which includes: a lock body made of a plurality of metal plates with a central chamber and a number of openings formed therein; a cylindrical lock barrel matched with a tumbler structure disposed in the central chamber of the lock body; an improved locking mechanism movably installed in a housing structure in the upper portion of the central chamber; and a U-shaped shackle with facing notches slidingly provided in the openings of the lock body. The improved lock mechanism comprises a pair of lock members identically formed in an I-shaped structure, and a pair of elastic members also identically shaped so that a simpler structure and ab effective operation are achieved therewith.
摘要翻译：一种改进的层压挂锁，其包括：由多个金属板制成的锁体，其具有形成在其中的中心室和多个开口; 与设置在所述锁体的中心室中的转杯结构相配合的圆柱形锁定桶; 改进的锁定机构，其可移动地安装在所述中央室的上部中的壳体结构中; 以及具有面向凹口的U形钩环，其滑动地设置在锁体的开口中。改进的锁定机构包括一对相同地形成为I形结构的锁定构件，并且一对弹性构件也相同地成形，从而实现了更简单的结构和有效的操作。

4. 发明授权

US08896021B2 Integrated circuit device 有权
标题翻译：集成电路器件
公开(公告)号：US08896021B2
公开(公告)日：2014-11-25
申请号：US13232048
申请日：2011-09-14
申请人： Chung-I Huang , Pao-An Chang , Ming-Tsung Lee
发明人： Chung-I Huang , Pao-An Chang , Ming-Tsung Lee
IPC分类号： H01L29/66 , H01L27/088 , H01L29/78 , H01L27/06 , H01L29/739 , H01L29/06 , H01L29/08 , H01L29/40
CPC分类号： H01L27/0623 , H01L27/088 , H01L29/0634 , H01L29/0847 , H01L29/404 , H01L29/7393 , H01L29/7835
摘要： An integrated circuit device includes a semiconductor substrate and a first transistor and a second transistor constructed in the semiconductor substrate. The first transistor has a first operating voltage higher than a second operating voltage of a second transistor. The first transistor includes a first drain structure, a first source structure, an isolation structure and a first gate structure. The first source structure includes a high voltage first-polarity well region, a first-polarity body region, a heavily doped first-polarity region, a second-polarity grade region and a heavily doped second-polarity region. The heavily doped second-polarity region is surrounded by the second-polarity grade region. The second-polarity grade region is surrounded by the first-polarity body region. The second transistor includes a second drain structure, a second source structure, a second gate structure and a first-polarity drift region. The first-polarity drift region and the first-polarity body region have the same dopant concentration.
摘要翻译：集成电路器件包括半导体衬底和构造在半导体衬底中的第一晶体管和第二晶体管。第一晶体管具有高于第二晶体管的第二工作电压的第一工作电压。第一晶体管包括第一漏极结构，第一源极结构，隔离结构和第一栅极结构。第一源结构包括高电压第一极性阱区，第一极性体区，重掺杂的第一极性区，第二极性等级区和重掺杂的第二极性区。重掺杂的第二极性区域被第二极性等级区域包围。第二极性等级区域由第一极性体区域包围。第二晶体管包括第二漏极结构，第二源极结构，第二栅极结构和第一极性漂移区。第一极性漂移区域和第一极性体区域具有相同的掺杂剂浓度。

5. 发明申请

US20060289680A1 SHOWER 审中-公开
标题翻译：淋浴
公开(公告)号：US20060289680A1
公开(公告)日：2006-12-28
申请号：US11160411
申请日：2005-06-22
申请人： Chung-I Huang
发明人： Chung-I Huang
IPC分类号： A62C31/00
CPC分类号： E03C1/0408
摘要： There is disclosed a shower apparatus including a shower, an outlet device and a control device. The shower includes a handle defining a passageway and a head defining a space in communication with the passageway and a recess in communication with the space. The outlet device is put in the space and can be switched between a closed position and an open position and kept in the open position as long as water keeps coming. The control device extends into the space from the recess so that it can be operated in order to switch the outlet device to the open position from the closed position.
摘要翻译：公开了一种淋浴器，包括淋浴器，出口装置和控制装置。淋浴器包括限定通道的手柄和限定与该通道连通的空间的头部以及与该空间连通的凹部。出水装置放置在空间中，只要水持续流入，可以在关闭位置和打开位置之间切换并保持在打开位置。控制装置从凹部延伸到空间中，使得其可以被操作以将出口装置从关闭位置切换到打开位置。

6. 发明申请

US20130062661A1 INTEGRATED CIRCUIT DEVICE 有权
标题翻译：集成电路设备
公开(公告)号：US20130062661A1
公开(公告)日：2013-03-14
申请号：US13232048
申请日：2011-09-14
申请人： Chung-I Huang , Pao-An Chang , Ming-Tsung Lee
发明人： Chung-I Huang , Pao-An Chang , Ming-Tsung Lee
IPC分类号： H01L29/739
CPC分类号： H01L27/0623 , H01L27/088 , H01L29/0634 , H01L29/0847 , H01L29/404 , H01L29/7393 , H01L29/7835
摘要： An integrated circuit device includes a semiconductor substrate and a first transistor and a second transistor constructed in the semiconductor substrate. The first transistor has a first operating voltage higher than a second operating voltage of a second transistor. The first transistor includes a first drain structure, a first source structure, an isolation structure and a first gate structure. The first source structure includes a high voltage first-polarity well region, a first-polarity body region, a heavily doped first-polarity region, a second-polarity grade region and a heavily doped second-polarity region. The heavily doped second-polarity region is surrounded by the second-polarity grade region. The second-polarity grade region is surrounded by the first-polarity body region. The second transistor includes a second drain structure, a second source structure, a second gate structure and a first-polarity drift region. The first-polarity drift region and the first-polarity body region have the same dopant concentration.
摘要翻译：集成电路器件包括半导体衬底和构造在半导体衬底中的第一晶体管和第二晶体管。第一晶体管具有高于第二晶体管的第二工作电压的第一工作电压。第一晶体管包括第一漏极结构，第一源极结构，隔离结构和第一栅极结构。第一源结构包括高电压第一极性阱区，第一极性体区，重掺杂的第一极性区，第二极性等级区和重掺杂的第二极性区。重掺杂的第二极性区域被第二极性等级区域包围。第二极性等级区域由第一极性体区域包围。第二晶体管包括第二漏极结构，第二源极结构，第二栅极结构和第一极性漂移区。第一极性漂移区域和第一极性体区域具有相同的掺杂剂浓度。

7. 发明申请

US20060005888A1 Flow control apparatus 审中-公开
标题翻译：流量控制装置
公开(公告)号：US20060005888A1
公开(公告)日：2006-01-12
申请号：US10890439
申请日：2004-07-12
申请人： Chung-I Huang
发明人： Chung-I Huang
IPC分类号： F16K3/00
CPC分类号： F16K3/085 , Y10T137/86743
摘要： A flow control apparatus includes a housing. A valve is rotationally installed in the housing. A bolt includes a first end connected with the valve in the housing and an opposite second end inserted to the exterior of the housing. A joint is connected with the housing in order to keep the valve in the housing.
摘要翻译：流量控制装置包括壳体。阀旋转地安装在壳体中。螺栓包括与壳体中的阀连接的第一端和插入壳体外部的相对的第二端。接头与壳体连接以便将阀保持在壳体中。

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