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1. 发明申请

WO2010013214A1 SENSING ENVIRONMENTAL PARAMETER THROUGH STRESS INDUCED IN IC 审中-公开
标题翻译：通过IC中诱发的应力感测环境参数
公开(公告)号：WO2010013214A1
公开(公告)日：2010-02-04
申请号：PCT/IB2009/053321
申请日：2009-07-30
申请人： NXP B.V. , HOOFMAN, Romano , PIJNENBURG, Remco, Henricus, Wilhelmus , PONOMAREV, Youri, Victorovitch
发明人： HOOFMAN, Romano , PIJNENBURG, Remco, Henricus, Wilhelmus , PONOMAREV, Youri, Victorovitch
IPC分类号： G01D5/18
CPC分类号： G01D5/18
摘要： A sensor is provided for sensing a value of a physical parameter characteristic of the sensor's environment. The sensor is implemented in semiconductor technology. A behavior of the sensor's electronic circuitry is affected by stress. The stress is induced by a film covering the circuitry or only part thereof. The stress is caused by the film's material, whose dimensions depend on a value of the parameter. This dependence is different from the 5 dependence of the circuitry's substrate on the same parameter.
摘要翻译：提供了用于感测传感器环境的物理参数特性值的传感器。传感器采用半导体技术实现。传感器的电子电路的行为受到压力的影响。应力由覆盖电路或仅部分的膜引起。压力是由胶片材料造成的，其尺寸取决于参数值。这种依赖性不同于电路衬底对相同参数的依赖性。

2. 发明申请

WO2008038197A1 BRANCHING THERAPY ELEMENTS AND METHOD OF THEIR INSERTION INTO LIVING TISSUE 审中-公开
标题翻译：分配治疗单元及其入侵组织的方法
公开(公告)号：WO2008038197A1
公开(公告)日：2008-04-03
申请号：PCT/IB2007/053824
申请日：2007-09-20
申请人： KONINKLIJKE PHILIPS ELECTRONICS, N.V. , U.S. PHILIPS CORPORATION , PONOMAREV, Youri , MERZ, Matthias , PIJNENBURG, Remco Henricus Wilhelmus
发明人： PONOMAREV, Youri , MERZ, Matthias , PIJNENBURG, Remco Henricus Wilhelmus
IPC分类号： A61N1/05
CPC分类号： A61N1/0529 , A61N1/0534
摘要： An implantable medical system for electrical recording and or providing therapy to a plurality of tissue sites without damage to surrounding blood vessels is disclosed comprising: an implant body having a plurality of therapy elements, the elements being hingedly attached at one end to the surface of the body and releasably extendable outward from the surface of the body at the other end; a release mechanism for each of the elements; and a coating material covering the body and the elements; wherein upon dissolution of the coating material after implantation, the release mechanism is capable of causing the elements to extend outward at one end from the surface of the body and into a plurality of tissue sites without damage to the surrounding blood vessels. The method of implanting the system into a body is also disclosed.
摘要翻译：公开了一种用于对多个组织部位进行电记录和/或对周围血管的损伤提供治疗的可植入医疗系统，包括：具有多个治疗元件的植入体，所述元件在一端铰接附接到并且在另一端从主体的表面可释放地向外延伸; 用于每个元件的释放机构; 以及覆盖所述主体和所述元件的涂层材料; 其中，在植入后溶解涂层材料时，释放机构能够使元件在一端从身体的表面向外延伸并且进入多个组织部位而不损坏周围的血管。还公开了将系统植入体内的方法。

3. 发明申请

WO2008035285A2 IMPLANTABLE MULTI-ELECTRODE DEVICE 审中-公开
标题翻译：可植入的多电极装置
公开(公告)号：WO2008035285A2
公开(公告)日：2008-03-27
申请号：PCT/IB2007053775
申请日：2007-09-18
申请人： KONINKL PHILIPS ELECTRONICS NV , PHILIPS CORP , MERZ MATTHIAS , PONOMAREV YOURI V , PIJNENBURG REMCO H W
发明人： MERZ MATTHIAS , PONOMAREV YOURI V , PIJNENBURG REMCO H W
CPC分类号： A61N1/0529 , A61B5/04001 , A61L31/148 , A61N1/0531 , A61N1/0534 , A61N1/0536 , A61N1/0539 , A61N1/0558 , A61N1/36082
摘要： The invention provides an implantable multi-electrode device (300) and related methods and apparatuses. In one embodiment, the invention includes an implantable device (300) comprising: an assembly block (320); and a plurality of leads (340...348) radiating from the assembly block (320), each of the plurality of leads (340...348) containing at least one electrode (342A), such that the electrodes are distributed within a three-dimensional space, wherein the assembly block (320) includes a barb (350) for anchoring the assembly block (320) within implanted tissue.
摘要翻译：本发明提供了一种植入式多电极装置（300）及相关的方法和装置。在一个实施例中，本发明包括可植入装置（300），其包括：组装块（320）; 和从所述组装块（320）辐射的多个引线（340 ... 348），所述多个引线（340 ... 348）中的每一个包含至少一个电极（342A），使得所述电极分布在三维空间，其中组装块（320）包括用于将组装块（320）锚定在植入组织内的倒钩（350）。

4. 发明申请

WO2008032252A1 ELECTROCHEMICAL ENERGY SOURCE AND ELECTRONIC DEVICE PROVIDED WITH SUCH AN ELECTROCHEMICAL ENERGY SOURCE 审中-公开
标题翻译：电化学能源和电子装置提供了这样的电化学能源
公开(公告)号：WO2008032252A1
公开(公告)日：2008-03-20
申请号：PCT/IB2007/053628
申请日：2007-09-10
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , PIJNENBURG, Remco, H., W. , NOTTEN, Petrus, H., L. , PONOMAREV, Youri, V. , NIESSEN, Rogier, A., H. , OP HET VELD, Johannes, H., G.
发明人： PIJNENBURG, Remco, H., W. , NOTTEN, Petrus, H., L. , PONOMAREV, Youri, V. , NIESSEN, Rogier, A., H. , OP HET VELD, Johannes, H., G.
IPC分类号： H01M6/40 , H01M6/42 , H01M10/04 , H01M10/12 , H01M10/28
CPC分类号： H01M6/40 , H01M2/1066 , H01M10/0436 , H01M10/0585
摘要： The invention relates to an improved electrochemical energy source, comprising: a substrate, and at least one stack deposited onto said substrate, the stack comprising: an first electrode, a second electrode, and an intermediate solid-state electrolyte separating the first electrode and the second electrode. The invention also relates to an electronic device provided with such an electrochemical energy source.
摘要翻译：本发明涉及一种改进的电化学能源，包括：衬底和沉积在所述衬底上的至少一个堆叠，所述堆叠包括：第一电极，第二电极和中间固态电解质，其将第一电极和第二电极。本发明还涉及一种具有这种电化学能源的电子设备。

5. 发明申请

WO2007010441A2 APPARATUS AND METHOD FOR COUPLING IMPLANTED ELECTRODES TO NERVOUS TISSUE 审中-公开
标题翻译：将植入电极与神经组织联接的装置和方法
公开(公告)号：WO2007010441A2
公开(公告)日：2007-01-25
申请号：PCT/IB2006052348
申请日：2006-07-11
申请人： KONINKL PHILIPS ELECTRONICS NV , PHILIPS CORP , MERZ MATTHIAS , PONOMAREV YOURI , PIJNENBURG REMCO
发明人： MERZ MATTHIAS , PONOMAREV YOURI , PIJNENBURG REMCO
CPC分类号： A61B5/04001 , A61B5/6805 , A61N1/0529 , A61N1/0531 , A61N1/0534 , A61N1/0543 , A61N1/0551 , B82Y15/00
摘要： An apparatus and method for improving electrical contact between an implanted device (10) for recording or stimulating neuronal activity and surrounding tissue (12) (e.g., brain tissue, nerve fibers, etc.). In an exemplary embodiment, a nanometer sized topographic structure (36, 136) (e.g., a nanometer scale pillar) is processed for electrical connection with a corresponding electrode (30, 32) of the implanted device (10). The nanometer scale topographic structure (36, 136) bridges a gap (26) between the implanted device (10) and surrounding tissue (12), thus improving neuron-electrode coupling therebetween. The present disclosure can also be extended to any application where capacitive coupling to single or multiple cells (20) can be used for sensing and/or stimulation thereof.
摘要翻译：一种用于改善用于记录或刺激神经元活动的植入装置（10）与周围组织（12）（例如脑组织，神经纤维等）之间的电接触的装置和方法。在示例性实施例中，处理纳米尺度的地形结构（例如纳米尺度柱）（例如纳米尺度的柱），以与植入装置（10）的对应电极（30,32）电连接。纳米级地形结构（36,136）桥接植入装置（10）和周围组织（12）之间的间隙（26），从而改善其间的神经元 - 电极耦合。本公开还可以扩展到任何应用，其中可将单个或多个单元（20）的电容耦合用于感测和/或刺激它们。

6. 发明申请

WO2004077498A2 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：WO2004077498A2
公开(公告)日：2004-09-10
申请号：PCT/IB2004/050113
申请日：2004-02-13
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , VAN DUUREN, Michiel, J. , VAN SCHAIJK, Robertus, T., F. , PONOMAREV, Youri , HOOKER, Jacob, C.
发明人： VAN DUUREN, Michiel, J. , VAN SCHAIJK, Robertus, T., F. , PONOMAREV, Youri , HOOKER, Jacob, C.
IPC分类号： H01L
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L29/42328 , H01L29/66825
摘要： In the method for manufacturing a semiconductor device (100), which comprises a semiconducting body (1) having a surface (2) with a source region (3) and a drain region (4) defining a channel direction (102) and a channel region (101), a first stack (6) of layers on top of the channel region (101), the first stack (6) comprising, in this order, a tunnel dielectric layer (11), a charge storage layer (10) for storing an electric charge and a control gate layer (9), and a second stack (7) of layers on top of the channel region (101) directly adjacent to the first stack (6) in the channel direction (102), the second stack (7) comprising an access gate layer (14) electrically insulated from the semiconducting body (1) and from the first stack (6), initially a first sacrificial layer (90) is used, which is later replaced by the control gate layer (9). A second sacrificial layer (20) is used to protect the part (82) off the surface (2) adjacent to the second sidewall (81) and opposite to the position (83) of the second stack (7) when providing the access gate layer (14).
摘要翻译：在制造半导体器件（100）的方法中，其包括具有源极区（3）的表面（2）和限定沟道方向（102）的漏极区（4）的半导体（1）和通道区域（101），在沟道区域（101）的顶部上的第一层叠层（6），第一堆叠（6）依次包括隧道介电层（11），电荷存储层（10）用于在通道方向（102）上直接与第一堆叠（6）相邻的通道区域（101）的顶部上存储电荷和控制栅极层（9）以及第二堆叠（7），第二堆叠（7）包括与半导电体（1）和第一堆叠（6）电绝缘的存取栅极层（14），最初使用第一牺牲层（90），其随后由控制栅极层（9）。当提供接入门（20）时，第二牺牲层（20）用于保护邻近第二侧壁（81）的表面（2）并且与第二堆叠（7）的位置（83）相对的部分（82）层（14）。

7. 发明申请

WO2011073837A1 LIQUID IMMERSION SENSOR 审中-公开
标题翻译：液体浸入式传感器
公开(公告)号：WO2011073837A1
公开(公告)日：2011-06-23
申请号：PCT/IB2010/055480
申请日：2010-11-29
申请人： NXP B.V. , HUMBERT, Aurelie , MERZ, Matthias , DAAMEN, Roel , PONOMAREV, Youri Victorovitch
发明人： HUMBERT, Aurelie , MERZ, Matthias , DAAMEN, Roel , PONOMAREV, Youri Victorovitch
IPC分类号： G01N27/04
CPC分类号： G01N27/041 , G01N27/048
摘要： Disclosed is a liquid immersion sensor comprising a substrate (10) carrying a conductive sensing element (20) and a corrosive agent (30) for corroding the conductive sensing element, said corrosive agent being immobilized in the vicinity of the conductive sensing element and being soluble in said liquid.
摘要翻译：公开了一种液浸传感器，其包括承载导电感测元件（20）的基底（10）和用于腐蚀导电感测元件的腐蚀剂（30），所述腐蚀剂固定在导电感测元件附近并且是可溶的在所述液体中。

8. 发明申请

WO2010023611A1 ELECTROCHEMICAL POTENTIOMETRIC SENSING WITHOUT REFERENCE ELECTRODE 审中-公开
标题翻译：无参考电极的电化学电位感测
公开(公告)号：WO2010023611A1
公开(公告)日：2010-03-04
申请号：PCT/IB2009/053710
申请日：2009-08-24
申请人： NXP B.V. , MERZ, Matthias , PONOMAREV, Youri, V. , CURATOLA, Gilberto
发明人： MERZ, Matthias , PONOMAREV, Youri, V. , CURATOLA, Gilberto
IPC分类号： G01N27/403 , G01N27/333 , G01N27/414
CPC分类号： G01N27/4148 , G01N27/4145
摘要： The invention relates to a method of determining a charged particle concentration in an analyte (100), the method comprising steps of: i) determining at least two measurement points of a surface-potential versus interface-temperature curve (c1, c2, c3, c4), wherein the interface temperature is obtained from a temperature difference between a first interface between a first ion-sensitive dielectric (Fsd) and the analyte (100) and a second interface between a second ion-sensitive dielectric (Ssd) and the analyte (100), and wherein the surface-potential is obtained from a potential difference between a first electrode (Fe) and a second electrode (Se) onto which said first ion-sensitive dielectric (Fsd) and said second ion-sensitive dielectric (Ssd) are respectively provided, And ii) calculating the charged particle concentration from locations of the at least two measurement points of said curve (c1, c2, c3, c4). This method, which still is a potentiometric electrochemical measurement, exploits the temperature dependency of a surface-potential of an ion-sensitive dielectric in an analyte. The invention further provides an electrochemical sensor for determining a charged particle concentration in an analyte. The invention also provides various sensors which can be used to determine the charged particle concentration, i.e. EGFET’s and EIS capacitors.
摘要翻译：本发明涉及一种测定分析物（100）中带电粒子浓度的方法，所述方法包括以下步骤：i）确定表面电位对界面温度曲线（c1，c2，c3，c3）的至少两个测量点， c4），其中界面温度是从第一离子敏感介质（Fsd）和分析物（100）之间的第一界面与第二离子敏感介质（Ssd）和分析物之间的第二界面（100），并且其中所述表面电位由所述第一离子敏感电介质（Fsd）和所述第二离子敏感电介质（Ssd）上的第一电极（Fe）和第二电极（Se）之间的电位差获得，），和ii）从所述曲线（c1，c2，c3，c4）的至少两个测量点的位置计算带电粒子浓度。这种仍然是电位电化学测量的方法利用分析物中离子敏感电介质的表面电位的温度依赖性。本发明还提供了一种用于测定分析物中带电粒子浓度的电化学传感器。本发明还提供可用于确定带电粒子浓度的各种传感器，即EGFET和EIS电容器。

9. 发明申请

WO2008132643A1 APPARATUS AND METHOD FOR MOLECULE DETECTION USING NANOPORES 审中-公开
标题翻译：使用纳米分子检测的装置和方法
公开(公告)号：WO2008132643A1
公开(公告)日：2008-11-06
申请号：PCT/IB2008/051438
申请日：2008-04-15
申请人： NXP B.V. , MERZ, Matthias , PONOMAREV, Youri, V. , CURATOLA, Gilberto
发明人： MERZ, Matthias , PONOMAREV, Youri, V. , CURATOLA, Gilberto
IPC分类号： C12Q1/68 , G01N27/414 , G01N15/12
CPC分类号： G01N33/48721 , C12Q1/6869 , G01N27/414 , C12Q2565/631
摘要： A detector device comprises a substrate (50), a source region (S) and a drain region (D), and a channel region (65) between the source and drain regions. A nanopore (54) passes through the channel region, and connects fluid chambers (56,58) on opposite sides of the substrate. A voltage bias is provided between the fluid chambers,the source and drain regions and a charge flow between the source and drain regions is sensed. The device uses a nanopore for the confinement of a sample under test (for example nucleotides) close to a sensor. The size of the sensor can be made similar to the spacing of adjacent nucleotides in a DNA strand. In this way, the disadvantages of PCR based techniques for DNA sequencing are avoided, and single nucleotide resolution can be attained.
摘要翻译：检测器装置包括衬底（50），源区（S）和漏区（D），以及在源区和漏区之间的沟道区（65）。纳米孔（54）穿过沟道区域，并且连接在衬底的相对侧上的流体室（56,58）。在流体室，源极和漏极区之间提供电压偏置，并且感测源区和漏区之间的电荷流。该装置使用纳米孔来限制待测样品（例如核苷酸）靠近传感器。可以使传感器的尺寸与DNA链中相邻核苷酸的间隔相似。以这种方式，避免了基于PCR的DNA测序技术的缺点，可以实现单核苷酸分辨率。

10. 发明申请

WO2008023312A1 SUBSTRATE FOR THE APPLICATION OF THIN LAYERS, AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
标题翻译：薄层应用的基材及其生产方法
公开(公告)号：WO2008023312A1
公开(公告)日：2008-02-28
申请号：PCT/IB2007/053286
申请日：2007-08-17
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , NIESSEN, Rogier, A., H. , NOTTEN, Petrus, H., L. , OP HET VELD, Johannes, H., G. , PIJNENBURG, Remco, H., W. , PONOMAREV, Youri, V.
发明人： NIESSEN, Rogier, A., H. , NOTTEN, Petrus, H., L. , OP HET VELD, Johannes, H., G. , PIJNENBURG, Remco, H., W. , PONOMAREV, Youri, V.
IPC分类号： H01M4/02 , H01M6/40 , H01M10/04 , H01M4/04
CPC分类号： H01M6/40 , H01M4/02 , H01M4/0421 , H01M4/0423 , H01M4/0426 , H01M4/0428 , H01M4/049 , H01M4/0492 , H01M8/0256 , H01M10/0436 , H01M2004/022
摘要： The invention relates to a substrate for the application of thin layers. The invention further relates to a thin layer battery stack based on such a substrate. The invention also relates to a method for the manufacture of such a substrate. Moreover, the invention relates to a method for the application of at least one layer to such a substrate. The substrate may comprise multiple vias having a width of between 2 and 10 microns. The substrate may be made of silicon and the vias are produced by making holes in the substrate using an etching technique.
摘要翻译：本发明涉及一种用于薄层应用的基板。本发明还涉及一种基于这种衬底的薄层电池堆叠。本发明还涉及制造这种基材的方法。此外，本发明涉及一种将至少一层施加到这种基底上的方法。衬底可以包括宽度为2至10微米的多个通孔。衬底可以由硅制成，并且通过使用蚀刻技术在衬底中形成孔来制造通孔。

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