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1. 发明申请

WO2011096745A2 SLURRY FOR POLISHING PHASE-CHANGE MATERIALS AND METHOD FOR PRODUCING A PHASE-CHANGE DEVICE USING SAME 审中-公开
标题翻译：用于抛光相变材料的浆料和使用其制造相变装置的方法
公开(公告)号：WO2011096745A2
公开(公告)日：2011-08-11
申请号：PCT/KR2011000749
申请日：2011-02-01
申请人： IUCF HYU , PARK JEA GUN , PAIK UN GYU , PARK JIN HYUNG , CUI HAO , CHO JONG YOUNG , HWANG HEE SUB , LIM JAE HYUNG , KIM YE HWAN
发明人： PARK JEA GUN , PAIK UN GYU , PARK JIN HYUNG , CUI HAO , CHO JONG YOUNG , HWANG HEE SUB , LIM JAE HYUNG , KIM YE HWAN
IPC分类号： C09K3/14
CPC分类号： C09K3/1463
摘要： The present invention relates to slurry for polishing crystalline phase-change materials and to a method for producing a phase-change device using the same. The slurry for polishing crystalline phase-change materials according to one embodiment of the present invention comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water. In addition, the method for producing a phase-change device according to one embodiment of the present invention comprises the following steps: preparing a substrate; forming a crystalline phase-change material film on the substrate; and removing the phase-change material film through a chemical-mechanical polishing process using slurry for polishing phase-change materials, which comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water.
摘要翻译：本发明涉及用于研磨晶体相变材料的浆料及其制造方法。根据本发明的一个实施方案的用于抛光结晶相变材料的浆料包括研磨剂，碱性磨料增强剂，具有高于高氯酸盐的标准还原电位的氧化剂和超纯水。此外，根据本发明的一个实施方式的相变装置的制造方法包括以下步骤：准备基板; 在基板上形成结晶相变材料膜; 以及使用用于抛光相变材料的浆料通过化学机械抛光方法除去相变材料膜，其包括研磨剂，碱性磨料增强剂，具有高于高氯酸盐的标准还原电位的氧化剂，以及超纯水。

2. 发明申请

WO2004101702A1 CERIA ABRASIVE FOR CMP 审中-公开
标题翻译： CERIA研磨CMP
公开(公告)号：WO2004101702A1
公开(公告)日：2004-11-25
申请号：PCT/KR2004/001139
申请日：2004-05-14
申请人： K.C. TECH CO., LTD. , HANYANG HAK WON CO., LTD. , PAIK, Un-Gyu , PARK, Jae-Gun , KIM, Sang-Kyun , KATOH, Takeo , PARK, Yong-Kook
发明人： PAIK, Un-Gyu , PARK, Jae-Gun , KIM, Sang-Kyun , KATOH, Takeo , PARK, Yong-Kook
IPC分类号： C09K3/14
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053
摘要： The present invention relates to a CMP abrasive comprising a ceria slurry and a chemical additive having two or more functional groups by mixing and synthesizing a polymeric molecule and a monomer . Also, the present invention relates to a method for a manufacturing CMP abrasive by providing a ceria slurry, manufacturing a chemical additive having two or more functional groups by mixing and synthesizing of the polymeric moleculeand the monomer in a reactor, and mixing said slurry and said chemical additive. Therefore, when the abrasive according to the present invention is used as an STI CMP abrasive, it is possible to apply the abrasive to the patterning process required in the very large scale integration semiconductor process. Furthermore, the CMP abrasive of the present invention has a superior removal rate, superior polishing selectivity, superior within wafer non-uniformity (WIWNU), and minimized occurrence of micro scratches.
摘要翻译：本发明涉及通过混合和合成聚合物分子和单体，其包含二氧化铈浆料和具有两个或更多个官能团的化学添加剂的CMP磨料。另外，本发明涉及通过提供二氧化铈浆料制造CMP研磨剂的方法，通过在反应器中混合和合成聚合物分子和单体制备具有两个或多个官能团的化学添加剂，并将所述浆料和所述化学添加剂。因此，当将根据本发明的研磨剂用作STI CMP研磨剂时，可以将磨料施加到非常大规模的集成半导体工艺中所需的图案化工艺。此外，本发明的CMP磨料具有优异的去除速度，优异的抛光选择性，在晶片不均匀性（WIWNU）内优异，并且最小化微小划痕的发生。

3. 发明申请

WO2011010819A3 MULTI-SELECTIVE POLISHING SLURRY COMPOSITION AND A SEMICONDUCTOR ELEMENT PRODUCTION METHOD USING THE SAME 审中-公开
标题翻译：多选择性抛光浆料组合物及使用该组合物的半导体元件生产方法
公开(公告)号：WO2011010819A3
公开(公告)日：2011-04-21
申请号：PCT/KR2010004468
申请日：2010-07-09
申请人： IUCF HYU , PARK JEA-GUN , PAIK UN-GYU , PARK JIN-HYUNG , CUI HAO , CHO JONG-YOUNG , HWANG HEE-SUB , LIM JAE-HYUNG , KIM YE-HWAN
发明人： PARK JEA-GUN , PAIK UN-GYU , PARK JIN-HYUNG , CUI HAO , CHO JONG-YOUNG , HWANG HEE-SUB , LIM JAE-HYUNG , KIM YE-HWAN
IPC分类号： H01L21/304
CPC分类号： H01L21/31056 , C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212
摘要： Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent. The polishing slurry composition may be a mixture of 100 parts by weight of a polishing agent suspension, containing a polishing agent, and from 40 to 120 parts by weight of an additive solution, and the additive solution can contain 100 parts by weight of a solvent, from 0.01 to 5 parts by weight of a silicon nitride film passivation agent and from 0.01 to 5 parts by weight of a silicon film passivation agent.
摘要翻译：本发明提供一种多选择性研磨液组合物及使用其的半导体元件制造方法。提供有元件图案的硅膜形成在具有第一区域和第二区域的基板的最上部分上。第一区域上的元件图案密度高于第二区域上的元件图案密度。在元件图案上依次形成第一氧化硅膜，氮化硅膜和第二氧化硅膜。通过使用包含抛光剂，氮化硅膜钝化剂和硅膜钝化剂的抛光浆料组合物，对衬底进行化学机械抛光直到暴露硅膜。抛光浆料组合物可以是100重量份含有抛光剂的抛光剂悬浮液和40-120重量份添加剂溶液的混合物，并且添加剂溶液可以含有100重量份溶剂 0.01至5重量份的氮化硅膜钝化剂和0.01至5重量份的硅膜钝化剂。

4. 发明申请

WO2004101702A9 CERIA ABRASIVE FOR CMP 审中-公开
标题翻译： CERIA研磨CMP
公开(公告)号：WO2004101702A9
公开(公告)日：2005-12-15
申请号：PCT/KR2004001139
申请日：2004-05-14
申请人： K C TECH CO LTD , UNIV SOGANG IND UNIV COOP FOUN , PAIK UN-GYU , PARK JAE-GUN , KIM SANG-KYUN , KATOH TAKEO , PARK YONG-KOOK
发明人： PAIK UN-GYU , PARK JAE-GUN , KIM SANG-KYUN , KATOH TAKEO , PARK YONG-KOOK
IPC分类号： C09G1/02 , C09K3/14 , H01L21/3105
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053
摘要： The present invention relates to a CMP abrasive comprising a ceria slurry and a chemical additive having two or more functional groups by mixing and synthesizing a polymeric molecule and a monomer . Also, the present invention relates to a method for a manufacturing CMP abrasive by providing a ceria slurry, manufacturing a chemical additive having two or more functional groups by mixing and synthesizing of the polymeric moleculeand the monomer in a reactor, and mixing said slurry and said chemical additive. Therefore, when the abrasive according to the present invention is used as an STI CMP abrasive, it is possible to apply the abrasive to the patterning process required in the very large scale integration semiconductor process. Furthermore, the CMP abrasive of the present invention has a superior removal rate, superior polishing selectivity, superior within wafer non-uniformity (WIWNU), and minimized occurrence of micro scratches.
摘要翻译：本发明涉及通过混合和合成聚合物分子和单体，其包含二氧化铈浆料和具有两个或更多个官能团的化学添加剂的CMP磨料。另外，本发明涉及通过提供二氧化铈浆料制造CMP研磨剂的方法，通过在反应器中混合和合成聚合物分子和单体制备具有两个或多个官能团的化学添加剂，并将所述浆料和所述化学添加剂。因此，当将根据本发明的研磨剂用作STI CMP研磨剂时，可以将磨料施加到非常大规模的集成半导体工艺中所需的图案化工艺。此外，本发明的CMP磨料具有优异的去除速度，优异的抛光选择性，在晶片不均匀性（WIWNU）内优异，并且最小化微小划痕的发生。

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