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1. 发明申请

WO2004101702A1 CERIA ABRASIVE FOR CMP 审中-公开
标题翻译： CERIA研磨CMP
公开(公告)号：WO2004101702A1
公开(公告)日：2004-11-25
申请号：PCT/KR2004/001139
申请日：2004-05-14
申请人： K.C. TECH CO., LTD. , HANYANG HAK WON CO., LTD. , PAIK, Un-Gyu , PARK, Jae-Gun , KIM, Sang-Kyun , KATOH, Takeo , PARK, Yong-Kook
发明人： PAIK, Un-Gyu , PARK, Jae-Gun , KIM, Sang-Kyun , KATOH, Takeo , PARK, Yong-Kook
IPC分类号： C09K3/14
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053
摘要： The present invention relates to a CMP abrasive comprising a ceria slurry and a chemical additive having two or more functional groups by mixing and synthesizing a polymeric molecule and a monomer . Also, the present invention relates to a method for a manufacturing CMP abrasive by providing a ceria slurry, manufacturing a chemical additive having two or more functional groups by mixing and synthesizing of the polymeric moleculeand the monomer in a reactor, and mixing said slurry and said chemical additive. Therefore, when the abrasive according to the present invention is used as an STI CMP abrasive, it is possible to apply the abrasive to the patterning process required in the very large scale integration semiconductor process. Furthermore, the CMP abrasive of the present invention has a superior removal rate, superior polishing selectivity, superior within wafer non-uniformity (WIWNU), and minimized occurrence of micro scratches.
摘要翻译：本发明涉及通过混合和合成聚合物分子和单体，其包含二氧化铈浆料和具有两个或更多个官能团的化学添加剂的CMP磨料。另外，本发明涉及通过提供二氧化铈浆料制造CMP研磨剂的方法，通过在反应器中混合和合成聚合物分子和单体制备具有两个或多个官能团的化学添加剂，并将所述浆料和所述化学添加剂。因此，当将根据本发明的研磨剂用作STI CMP研磨剂时，可以将磨料施加到非常大规模的集成半导体工艺中所需的图案化工艺。此外，本发明的CMP磨料具有优异的去除速度，优异的抛光选择性，在晶片不均匀性（WIWNU）内优异，并且最小化微小划痕的发生。

2. 发明申请

WO2002075799A1 NOZZLE FOR INJECTING SUBLIMABLE SOLID PARTICLES ENTRAINED IN GAS FOR CLEANING A SURFACE 审中-公开
标题翻译：注入气体进入清洁表面的可吸附固体颗粒的喷嘴
公开(公告)号：WO2002075799A1
公开(公告)日：2002-09-26
申请号：PCT/KR2002/000348
申请日：2002-02-28
申请人： K.C. TECH CO., LTD. , YOON, Cheol-Nam , KO, Se-Jong
发明人： YOON, Cheol-Nam , KO, Se-Jong
IPC分类号： H01L21/304
CPC分类号： H01L21/3046 , B24C1/003 , B24C3/322 , B24C5/04 , Y10S134/902
摘要： Disclosed is a nozzle for injecting sublimable solid particles, which is capable of minimizing consumption of the carrier gas and also maximizing cleaning efficiency. The nozzle comprises a base block having a space in which carrier gas is supplied through a gas supplying pipe; a sub-block having a space in which cleaning medium decompressed by a regulator is supplied through a cleaning medium supplying pipe; a first venturi block having a venturi path for adiabatically expanding the carrier gas supplied from the space of the base block, and a cleaning medium injection path communicating the venturi path and the space of the sub-block and the carrier gas passed through the venturi path; and a second venturi block having a venturi path for adiabatically expanding the mixed gas of the carrier gas and the cleaning medium.
摘要翻译：公开了一种用于喷射可升华的固体颗粒的喷嘴，其能够最小化载气的消耗并且还使清洗效率最大化。喷嘴包括具有通过气体供给管供给载气的空间的基块; 具有空间的子块，其中通过清洁介质供给管供给由调节器减压的清洁介质; 具有用于绝热膨胀从基座空间供应的载气的文氏管路径的第一文氏管块，以及连通文丘里路径和子块的空间以及通过文氏管路径的载气的清洁介质注入路径 ; 以及具有用于绝热地膨胀载气和清洁介质的混合气体的文氏管路径的第二文氏管块。

3. 发明授权

US09994735B2 Slurry composition for polishing tungsten 有权
公开(公告)号：US09994735B2
公开(公告)日：2018-06-12
申请号：US15189190
申请日：2016-06-22
申请人： K.C. Tech Co., Ltd.
发明人： Jin Sook Hwang , Hyun Goo Kong , Han Teo Park
IPC分类号： C09K13/00 , C03C15/00 , C03C25/68 , H01L21/302 , H01L21/461 , C09G1/02 , C09K3/14 , H01L21/321 , H01L21/306 , C23F3/06 , C23F1/10
CPC分类号： C09G1/02 , C08K3/36 , C08K2003/2213 , C08K2003/2227 , C08K2003/2237 , C08K2003/2244 , C08K2003/2262 , C09K3/14 , C09K13/00 , C23F1/10 , C23F3/06 , H01L21/30625 , H01L21/32115
摘要： A slurry composition for polishing tungsten is provided. The slurry composition for polishing tungsten may include a water-soluble polymer, abrasive particles and an etching adjuster.

4. 发明申请

US20140366913A1 SUBSTRATE CLEANING APPARATUS AND METHOD AND BRUSH ASSEMBLY USED THEREIN 有权
标题翻译：基板清洁装置及其使用的方法和刷子组件
公开(公告)号：US20140366913A1
公开(公告)日：2014-12-18
申请号：US14301669
申请日：2014-06-11
申请人： K.C. TECH CO., LTD.
发明人： Moon Gi CHO , Jun Ho SON
IPC分类号： B08B1/00 , B08B1/04
CPC分类号： H01L21/67046 , A46B13/001 , B08B1/04
摘要： Provided are a substrate cleaning apparatus and method and a brush assembly used therein. The substrate cleaning apparatus for contact-cleaning a substrate includes a cleaning brush rotatably disposed in a cylindrical shape and having an outer circumferential surface contacting the substrate to clean the substrate. Here, the cleaning brush includes a plurality of pressure chambers expanding by a fluid pressure and disposed along a longitudinal direction of a rotation axis rotating at a central portion of the cleaning brush, and the plurality of pressure chambers are individually expandable to allow a portion of the outer circumferential surface to protrude in a radial direction and thus contact-clean a portion of the substrate.
摘要翻译：提供了其中使用的基板清洁装置和方法以及刷组件。用于接触清洁基板的基板清洁装置包括可旋转地设置成圆柱形状并具有与基板接触的外周表面以清洁基板的清洁刷。这里，清洁刷包括多个压力室，其通过流体压力膨胀并且沿着在清洁刷的中心部分处旋转的旋转轴线的纵向方向设置，并且多个压力室单独地可膨胀以允许所述外圆周表面沿径向突出，从而接触所述基底的一部分。

5. 发明授权

US10138395B2 Abrasive particle-dispersion layer composite and polishing slurry composition including the same 有权
公开(公告)号：US10138395B2
公开(公告)日：2018-11-27
申请号：US15372701
申请日：2016-12-08
申请人： K.C. Tech Co., Ltd.
发明人： Jang Kuk Kwon , Sung Pyo Lee , Chang Gil Kwon , Jun Ha Hwang
IPC分类号： C09G1/02 , C09K3/14 , H01L21/306 , H01L21/3105 , H01L21/321
摘要： An abrasive particle-dispersion layer composite and a polishing slurry composition including the abrasive particle-dispersion layer composite are provided. The abrasive particle-dispersion layer composite includes abrasive particles, a first dispersant that is at least one anionic compound among a copolymer with a functional group of a resonance structure, a carboxyl group-containing polymer and a carboxyl group-containing organic acid, a second dispersant that is at least one cationic compound among an amino acid, an organic acid, polyalkylene glycol and a high-molecular polysaccharide coupled to a glucosamine compound, and a third dispersant that is a cationic polymer including at least two ionized cations in a molecular formula.

6. 发明授权

US09704729B2 Substrate cleaning apparatus and method and brush assembly used therein 有权
公开(公告)号：US09704729B2
公开(公告)日：2017-07-11
申请号：US14301669
申请日：2014-06-11
申请人： K.C. TECH CO., LTD.
发明人： Moon Gi Cho , Jun Ho Son
IPC分类号： H01L21/67 , A46B13/00 , B08B1/04
CPC分类号： H01L21/67046 , A46B13/001 , B08B1/04
摘要： Provided are a substrate cleaning apparatus and method and a brush assembly used therein. The substrate cleaning apparatus for contact-cleaning a substrate includes a cleaning brush rotatably disposed in a cylindrical shape and having an outer circumferential surface contacting the substrate to clean the substrate. Here, the cleaning brush includes a plurality of pressure chambers expanding by a fluid pressure and disposed along a longitudinal direction of a rotation axis rotating at a central portion of the cleaning brush, and the plurality of pressure chambers are individually expandable to allow a portion of the outer circumferential surface to protrude in a radial direction and thus contact-clean a portion of the substrate.

7. 发明申请

US20160016185A1 SLOT DIE COATING APPARATUS AND COATING METHOD USING THE SAME 有权
标题翻译：缝合涂装装置和使用它的涂层方法
公开(公告)号：US20160016185A1
公开(公告)日：2016-01-21
申请号：US14623468
申请日：2015-02-16
申请人： Samsung Display Co., Ltd. , K.C. TECH CO., LTD.
发明人： Jae Cheol Park , Gyeong Eun Eoh , Jong Soo Kim , Jun Heui Lee , Jong Wan Choi , Won Hyeng Pyen , Dae Ho Song , Seong Gyu Kwon , Kang-II Cho
IPC分类号： B05B1/04 , G02F1/136 , H01L27/12
CPC分类号： G02F1/136 , B05B1/044 , B05B3/18 , B05C5/0254 , B05C11/10 , G02F1/1303 , G02F1/133377 , G02F2001/133357 , G02F2001/134345 , H01L27/124 , H01L27/1262
摘要： A slot die coater planarizing an upper surface of an encapsulation layer and a coating method using the same. The slot die coater includes a slit nozzle configured to supply a coating solution. The slit nozzle includes a hole vertically penetrating a center portion thereof, a first bottom surface disposed at a movement direction side of the slit nozzle with reference to the hole, and a second bottom surface disposed at an opposite direction side of the movement direction of the slit nozzle with reference to the hole. A width of the first bottom surface is different from the width of the second bottom surface.
摘要翻译：平面化封装层的上表面的槽模涂布机和使用其的涂布方法。槽模涂布机包括构造成供应涂布溶液的狭缝喷嘴。狭缝喷嘴包括垂直贯穿其中心部分的孔，相对于该孔设置在狭缝喷嘴的移动方向侧的第一底面，以及设置在该狭缝喷嘴的移动方向的相反方向侧的第二底面狭缝喷嘴参照孔。第一底面的宽度与第二底面的宽度不同。

8. 发明申请

US20160108518A1 THIN FILM MANUFACTURING METHOD AND ATOMIC LAYER DEPOSITION APPARATUS 审中-公开
标题翻译：薄膜制造方法和原子层沉积装置
公开(公告)号：US20160108518A1
公开(公告)日：2016-04-21
申请号：US14834230
申请日：2015-08-24
申请人： K.C. Tech Co., Ltd.
发明人： Sung Hyun PARK , In Chul SHIN , Keun Woo LEE , Kyung Joon KIM
IPC分类号： C23C16/34 , C23C16/44 , H01L21/02 , C23C16/455
CPC分类号： C23C16/345 , C23C16/45536 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/0228
摘要： A method of manufacturing a silicon nitride (Si3N4) film at low temperature using an atomic layer deposition (ALD), and an ALD apparatus for the same are disclosed. The method of manufacturing a Si3N4 film uses a silicon precursor material including silicon as a source gas, an N2 gas activated by plasma as a reaction gas, and an N2 gas as a purge gas, and manufactures a Si3N4 film by providing gases in an order of the source gas, the purge gas, the reaction gas, and the purge gas.
摘要翻译：公开了使用原子层沉积（ALD）在低温下制造氮化硅（Si 3 N 4）膜的方法和用于其的ALD装置。制造Si 3 N 4膜的方法使用包括硅作为原料气体的硅前体材料，由等离子体激活的N 2气体作为反应气体，并且使用N 2气体作为吹扫气体，并通过以顺序提供气体制造Si 3 N 4膜的源气体，吹扫气体，反应气体和净化气体。

9. 发明授权

US10077381B2 Polishing slurry composition 有权
公开(公告)号：US10077381B2
公开(公告)日：2018-09-18
申请号：US15205684
申请日：2016-07-08
申请人： K.C. Tech Co., Ltd.
发明人： Dong Kyu Choi , Young Ho Yoon , Hyun Goo Kong , Jin Sook Hwang , Han Teo Park
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C09G1/02 , C23F3/06
CPC分类号： C09G1/02 , C23F3/06
摘要： A polishing slurry composition is provided. The polishing slurry composition includes at least two types of abrasive particles among first abrasive particles, second abrasive particles, and third abrasive particles, and an oxidizer. A peak-to-valley roughness Rpv decreases when a contact area between the abrasive particles and a tungsten-containing film increases.

10. 发明申请

US20170166780A1 ABRASIVE PARTICLE-DISPERSION LAYER COMPOSITE AND POLISHING SLURRY COMPOSITION INCLUDING THE SAME 审中-公开
公开(公告)号：US20170166780A1
公开(公告)日：2017-06-15
申请号：US15372701
申请日：2016-12-08
申请人： K.C. Tech Co., Ltd.
发明人： Jang Kuk KWON , Sung Pyo Lee , Chang Gil Kwon , Jun Ha Hwang
IPC分类号： C09G1/02 , H01L21/3105 , H01L21/306 , C09K3/14
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1436 , C09K3/1463 , H01L21/30625 , H01L21/31053 , H01L21/31055 , H01L21/3212
摘要： An abrasive particle-dispersion layer composite and a polishing slurry composition including the abrasive particle-dispersion layer composite are provided. The abrasive particle-dispersion layer composite includes abrasive particles, a first dispersant that is at least one anionic compound among a copolymer with a functional group of a resonance structure, a carboxyl group-containing polymer and a carboxyl group-containing organic acid, a second dispersant that is at least one cationic compound among an amino acid, an organic acid, polyalkylene glycol and a high-molecular polysaccharide coupled to a glucosamine compound, and a third dispersant that is a cationic polymer including at least two ionized cations in a molecular formula.

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