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1. 发明申请

US20100117782A1 VARISTOR 有权
公开(公告)号：US20100117782A1
公开(公告)日：2010-05-13
申请号：US12426589
申请日：2009-04-20
申请人： Hiroyuki SATO , Makoto NUMATA , Yo SAITO , Hitoshi TANAKA , Goro TAKEUCHI , Osamu TAGUCHI , Ryuichi TANAKA
发明人： Hiroyuki SATO , Makoto NUMATA , Yo SAITO , Hitoshi TANAKA , Goro TAKEUCHI , Osamu TAGUCHI , Ryuichi TANAKA
IPC分类号： H01C7/10
CPC分类号： H01C7/108 , H01C7/1006 , H01L23/62 , H01L23/647 , H01L33/641 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16268 , H01L2924/00014 , H01L2924/01046 , H01L2924/01079 , H01L2924/09701 , H01L2924/1305 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A varistor having a favorable heat-dissipating property is provided.In the varistor, a composite part having a favorable heat-dissipating property formed by a composite material composed of ZnO and Ag is arranged between main faces of a varistor matrix. Therefore, the heat transmitted from a semiconductor light-emitting device to a varistor part through an outer electrode can rapidly be transferred toward a main face on the opposite side through the composite part. In this varistor, side faces excluding inner side faces are exposed at side faces of the varistor matrix. Such a structure yields a favorable heat-dissipating property.
摘要翻译：提供具有良好的散热特性的变阻器。在变阻器中，通过由ZnO和Ag组成的复合材料形成的具有良好的散热特性的复合部件设置在压敏电阻矩阵的主面之间。因此，通过外部电极从半导体发光元件传递到变阻器部分的热量可以快速地通过复合部件向相反侧的主面转移。在该压敏电阻中，除了内侧面的侧面在压敏电阻矩阵的侧面露出。这种结构产生良好的散热性能。

2. 发明申请

US20100066479A1 MULTILAYER CHIP VARISTOR AND ELECTRONIC COMPONENT 有权
标题翻译：多层芯片变压器和电子元件
公开(公告)号：US20100066479A1
公开(公告)日：2010-03-18
申请号：US12536944
申请日：2009-08-06
申请人： Ryuichi TANAKA , Goro TAKEUCHI , Hiroyuki SATO , Osamu TAGUCHI
发明人： Ryuichi TANAKA , Goro TAKEUCHI , Hiroyuki SATO , Osamu TAGUCHI
IPC分类号： H01C7/10
CPC分类号： H01C7/10 , H01C7/102 , H01C7/18 , H01L2224/16225
摘要： A multilayer chip varistor is provided as one having excellent heat radiation performance. A thickness between a first principal face 3 and an outermost internal electrode layer 11A is smaller than a thickness between an internal electrode layer 21 and the outermost internal electrode layer 11A, and because of this configuration, heat generated from a bottom face of a semiconductor light emitting device LE1 is efficiently transferred to the outermost internal electrode layer 11A having a high thermal conductivity. Furthermore, in the multilayer chip varistor V1 of an electronic component EC1, the outermost internal electrode layer 11A has a first internal electrode 13 electrically connected to a first connection electrode 7 and a first terminal electrode 5 through first through-hole conductors 17, and a second internal electrode 15 electrically connected to a second connection electrode 8 and a second terminal electrode 6 through second through-hole conductors 27. Because of this configuration, heat H generated from the semiconductor light emitting device LE1 is transferred to both the first internal electrode 13 and the second internal electrode 15, so as to be transferred to the first through-hole conductors 17 and the second through-hole conductors 27. This leads to well-balanced transfer of heat to the first through-hole conductors 17 and the second through-hole conductors 27.
摘要翻译：提供具有优异的散热性能的多层芯片变阻器。第一主面3和最外侧内部电极层11A之间的厚度小于内部电极层21和最外侧内部电极层11A之间的厚度，并且由于该构造，从半导体光的底面产生的热量发光装置LE1被有效地传递到具有高导热性的最外层的内部电极层11A。此外，在电子部件EC1的多层片状变阻器V1中，最外侧的内部电极层11A具有通过第一通孔导体17与第一连接电极7和第一端子电极5电连接的第一内部电极13，第二内部电极15通过第二通孔导体27与第二连接电极8和第二端子电极6电连接。由此，半导体发光装置LE1产生的热H被传送到第一内部电极13 和第二内部电极15，以便转移到第一通孔导体17和第二通孔导体27中。这导致热量平衡地传递到第一通孔导体17和第二通孔导体17。孔导体27。

3. 发明授权

US07994894B2 Varistor 有权
标题翻译：压敏电阻
公开(公告)号：US07994894B2
公开(公告)日：2011-08-09
申请号：US12426589
申请日：2009-04-20
申请人： Hiroyuki Sato , Makoto Numata , Yo Saito , Hitoshi Tanaka , Goro Takeuchi , Osamu Taguchi , Ryuichi Tanaka
发明人： Hiroyuki Sato , Makoto Numata , Yo Saito , Hitoshi Tanaka , Goro Takeuchi , Osamu Taguchi , Ryuichi Tanaka
IPC分类号： H01C7/10
CPC分类号： H01C7/108 , H01C7/1006 , H01L23/62 , H01L23/647 , H01L33/641 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16268 , H01L2924/00014 , H01L2924/01046 , H01L2924/01079 , H01L2924/09701 , H01L2924/1305 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A varistor having a favorable heat-dissipating property is provided.In the varistor, a composite part having a favorable heat-dissipating property formed by a composite material composed of ZnO and Ag is arranged between main faces of a varistor matrix. Therefore, the heat transmitted from a semiconductor light-emitting device to a varistor part through an outer electrode can rapidly be transferred toward a main face on the opposite side through the composite part. In this varistor, side faces excluding inner side faces are exposed at side faces of the varistor matrix. Such a structure yields a favorable heat-dissipating property.
摘要翻译：提供具有良好的散热特性的变阻器。在变阻器中，通过由ZnO和Ag组成的复合材料形成的具有良好的散热特性的复合部件设置在压敏电阻矩阵的主面之间。因此，通过外部电极从半导体发光元件传递到变阻器部分的热量可以快速地通过复合部件向相反侧的主面转移。在该压敏电阻中，除了内侧面的侧面在压敏电阻矩阵的侧面露出。这种结构产生良好的散热性能。

4. 发明申请

US20100052841A1 MULTILAYER CHIP VARISTOR 有权
标题翻译：多层芯片变量
公开(公告)号：US20100052841A1
公开(公告)日：2010-03-04
申请号：US12535307
申请日：2009-08-04
申请人： Hiroyuki SATO , Goro TAKEUCHI , Osamu TAGUCHI , Ryuichi TANAKA
发明人： Hiroyuki SATO , Goro TAKEUCHI , Osamu TAGUCHI , Ryuichi TANAKA
IPC分类号： H01C7/10
CPC分类号： H01C7/1006 , H01C1/142 , H01C1/148 , H01C7/18
摘要： A multilayer chip varistor is provided as one capable of suppressing production of cracks and thereby preventing a connection failure between an internal electrode and a through-hole conductor. An internal electrode 21 is so configured as to be curved toward a direction of penetration of a through hole 10 in a connection portion 28 thereof to a through-hole conductor 27. By this configuration, a region T sandwiched between a curved surface 28a of the connection portion 28 and the through-hole conductor 27 is formed in a varistor layer 9 near the connection portion 28. In this region T, a metal concentration thereof becomes higher because of diffusion of metal of the internal electrode 21 and the through-hole conductor 27 into the varistor layer 9, and therefore, after completion of firing, the region T has an intermediate contraction percentage between that of the internal electrode 21 and through-hole conductor 27 and that of the other region of the varistor layer 9. This permits the region T to relax stress near the connection portion 28 where the internal electrode 21, through-hole conductor 27, and varistor layer 9 are congested so as to readily produce cracks.
摘要翻译：提供了一种能够抑制裂纹的产生，从而防止内部电极和通孔导体之间的连接故障的多层芯片变阻器。内部电极21被构造成朝向连通部分28中的通孔10的穿透方向弯曲到通孔导体27.通过这种构造，夹持在通孔10的弯曲表面28a之间的区域T 连接部分28和通孔导体27形成在连接部分28附近的可变电阻层9中。在该区域T中，由于内部电极21和通孔导体的金属的扩散，金属浓度变高 27，因此，在烧成完成后，区域T的内部电极21和通孔导体27的中间收缩率与可变电阻层9的其他区域的中间收缩率成为中间收缩。区域T在内部电极21，通孔导体27和压敏电阻层9堵塞的连接部28附近松弛应力，容易产生裂纹。

5. 发明申请

US20090243768A1 VARISTOR 有权
公开(公告)号：US20090243768A1
公开(公告)日：2009-10-01
申请号：US12396942
申请日：2009-03-03
申请人： Hiroyuki Sato , Makoto Numata , Yo Saito , Hitoshi Tanaka , Goro Takeuchi , Osamu Taguchi , Ryuichi Tanaka
发明人： Hiroyuki Sato , Makoto Numata , Yo Saito , Hitoshi Tanaka , Goro Takeuchi , Osamu Taguchi , Ryuichi Tanaka
IPC分类号： H01H83/00
CPC分类号： H01C7/102
摘要： A first varistor section includes a first face of an element body, and a third face facing the first face. The first varistor section has a first varistor element body, a first varistor electrode electrically connected to a first external electrode, and a second varistor electrode electrically connected to a second external electrode. A heat radiation section has a first heat radiation portion kept in contact with the third face of the first varistor section and electrically connected to the first and third external electrodes, a second heat radiation portion kept in contact with the third face of the first varistor section and electrically connected to the second and fourth external electrodes, and an insulating layer located between the first heat radiation portion and the second heat radiation portion and electrically insulating the first heat radiation portion and the second heat radiation portion from each other. The first heat radiation portion and the second heat radiation portion contain a metal.
摘要翻译：第一变阻器部分包括元件主体的第一面和面向第一面的第三面。第一变阻器部具有第一变阻器元件本体，与第一外部电极电连接的第一变阻器电极和与第二外部电极电连接的第二变阻器电极。散热部具有与第一可变电阻部的第三面保持接触并与第一和第三外部电极电连接的第一散热部，与第一可变电阻部的第三面保持接触的第二散热部并且电连接到第二和第四外部电极，以及位于第一散热部分和第二散热部分之间的绝缘层，并且使第一散热部分和第二散热部分彼此电绝缘。第一散热部和第二散热部包含金属。

6. 发明申请

US20060105995A1 TAFI inhibitors and their use to treat pulmonary fibrosis 审中-公开
标题翻译： TAFI抑制剂及其用于治疗肺纤维化的用途
公开(公告)号：US20060105995A1
公开(公告)日：2006-05-18
申请号：US11242524
申请日：2005-10-03
申请人： Hajime Fujimoto , Esteban Gabazza , Michael Morser , Mariko Nagashima , Osamu Taguchi
发明人： Hajime Fujimoto , Esteban Gabazza , Michael Morser , Mariko Nagashima , Osamu Taguchi
IPC分类号： A61K31/69 , A61K31/445 , A61K31/41 , A61K31/66 , A61K31/195
CPC分类号： A61K31/192 , A61K31/195 , A61K31/196 , A61K31/41 , A61K31/44 , A61K31/4409 , A61K31/445 , A61K31/66 , A61K31/662 , A61K31/69
摘要： The invention relates to TAFI inhibitors and their use to treat pulmonary fibrosis.
摘要翻译：本发明涉及TAFI抑制剂及其用于治疗肺纤维化的用途。

7. 发明授权

US5708546A Tape cartridge 失效
标题翻译：磁带盒
公开(公告)号：US5708546A
公开(公告)日：1998-01-13
申请号：US769002
申请日：1996-12-18
申请人： Osamu Taguchi
发明人： Osamu Taguchi
IPC分类号： G11B23/087 , G11B23/02
CPC分类号： G11B23/08735
摘要： A tape cartridge housing a tape for recording information signals has a cover plate and a pull-in inlet portion. The cover plate is rotatably supported by an opening/closure mechanism and rotated in association with movement of the opening/closure mechanism. The opening/closure mechanism, in turn, is rotatably supported by a main cartridge portion having on its front side a recess into which is intruded a tape pull-out mechanism adapted to pull out the tape. The opening/closure mechanism is adapted to open or close the recess, and the free end of the cover plate has an engagement protrusion. When the engagement protrusion is disengaged from a rotation guide groove provided on the main cartridge portion, the engagement protrusion is pull-in guided by the pull-in inlet portion into engagement with the rotation guide groove.
摘要翻译：容纳用于记录信息信号的胶带的带盒具有盖板和拉入口部分。盖板由打开/关闭机构可旋转地支撑并与打开/关闭机构的运动相关联地旋转。打开/关闭机构又由主盒部分可旋转地支撑，主盒部分在其前侧具有一个凹入部，入口带有拉出机构的带拉出机构。打开/关闭机构适于打开或关闭凹部，并且盖板的自由端具有接合突起。当接合突起从设置在主盒部分上的旋转引导槽脱离时，接合突起被引入入口部分引导而与旋转引导槽接合。

8. 发明授权

US5542621A Tape cassette 失效
标题翻译：磁带盒
公开(公告)号：US5542621A
公开(公告)日：1996-08-06
申请号：US354841
申请日：1994-12-09
申请人： Osamu Taguchi
发明人： Osamu Taguchi
IPC分类号： G11B23/087
CPC分类号： G11B23/08735
摘要： A tape cassette having a lid attached to its front surface portion so as to become openable and closable, the lid being composed of a front lid and a back lid and in which cam bosses provided on respective side portions of the back lid are guided along cam grooves formed on a cassette housing of the tape cassette to thereby open and close the lid when the lid is opened and closed. The tape cassette comprises a retaining member formed on the cassette housing in the vicinity of an upper end portion of the cam groove, wherein when the back lid is opened, the cam boss is brought in contact with the retaining member at the position in which an upper portion of the cam boss is projected from at least a lower surface of the retaining member, thereby preventing the cam boss from being disengaged from the cam groove.
摘要翻译：一种盒式磁带，其具有附接到其前表面部分以使其可打开和关闭的盖，所述盖由前盖和后盖组成，其中设置在所述后盖的相应侧部上的凸轮凸台沿着凸轮被引导形成在带盒的盒壳体上的槽，从而当盖打开和关闭时打开和关闭盖子。带盒包括形成在盒壳体上的保持构件，该保持构件在凸轮槽的上端部附近，其中当后盖打开时，凸轮凸台与保持构件接触，凸轮凸台的上部从保持构件的至少下表面突出，从而防止凸轮凸台与凸轮槽脱离。

9. 发明授权

US4673774A Superconductor 失效
标题翻译：超导体
公开(公告)号：US4673774A
公开(公告)日：1987-06-16
申请号：US795108
申请日：1985-11-05
申请人： Masayoshi Wake , Osamu Taguchi , Mitsuyuki Imaizumi
发明人： Masayoshi Wake , Osamu Taguchi , Mitsuyuki Imaizumi
IPC分类号： H01R4/68 , H02G15/08 , H01R4/00
CPC分类号： H01R4/68 , Y10S505/887 , Y10T29/49014 , Y10T29/49194 , Y10T29/49195
摘要： A superconductor comprises two superconducting wires butt-jointed, a superconducting doubling wire electrically and mechanically connecting the superconducting wires, and a stabilizer attached to the superconductors and the doubling wire to extend therealong, the superconductors, the doubling wire and the stabilizer together forming a superconductor of a constant cross-sectional area. A manufacturing process is also disclosed.
摘要翻译：超导体包括两根超导线对接，超导双线电连接和机械连接超导线，以及连接到超导体的稳定器和双绞线以沿着其延伸，超导体，双绞线和稳定器一起形成超导体具有恒定的横截面积。还公开了一种制造方法。

10. 发明授权

US08143992B2 Multilayer chip varistor 有权
标题翻译：多层芯片压敏电阻
公开(公告)号：US08143992B2
公开(公告)日：2012-03-27
申请号：US12535307
申请日：2009-08-04
申请人： Hiroyuki Sato , Goro Takeuchi , Osamu Taguchi , Ryuichi Tanaka
发明人： Hiroyuki Sato , Goro Takeuchi , Osamu Taguchi , Ryuichi Tanaka
IPC分类号： H01C7/10
CPC分类号： H01C7/1006 , H01C1/142 , H01C1/148 , H01C7/18
摘要： A multilayer chip varistor is provided as one capable of suppressing production of cracks and thereby preventing a connection failure between an internal electrode and a through-hole conductor. An internal electrode 21 is so configured as to be curved toward a direction of penetration of a through hole 10 in a connection portion 28 thereof to a through-hole conductor 27. By this configuration, a region T sandwiched between a curved surface 28a of the connection portion 28 and the through-hole conductor 27 is formed in a varistor layer 9 near the connection portion 28. In this region T, a metal concentration thereof becomes higher because of diffusion of metal of the internal electrode 21 and the through-hole conductor 27 into the varistor layer 9, and therefore, after completion of firing, the region T has an intermediate contraction percentage between that of the internal electrode 21 and through-hole conductor 27 and that of the other region of the varistor layer 9. This permits the region T to relax stress near the connection portion 28 where the internal electrode 21, through-hole conductor 27, and varistor layer 9 are congested so as to readily produce cracks.
摘要翻译：提供了一种能够抑制裂纹的产生，从而防止内部电极和通孔导体之间的连接故障的多层芯片变阻器。内部电极21被构造成朝向连通部分28中的通孔10的穿透方向弯曲到通孔导体27.通过这种构造，夹持在通孔10的弯曲表面28a之间的区域T 连接部分28和通孔导体27形成在连接部分28附近的可变电阻层9中。在该区域T中，由于内部电极21和通孔导体的金属的扩散，金属浓度变高 27，因此，在烧成完成后，区域T的内部电极21和通孔导体27的中间收缩率与可变电阻层9的其他区域的中间收缩率成为中间收缩。区域T在内部电极21，通孔导体27和压敏电阻层9堵塞的连接部28附近松弛应力，容易产生裂纹。

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