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1. 发明申请

US20100117782A1 VARISTOR 有权
公开(公告)号：US20100117782A1
公开(公告)日：2010-05-13
申请号：US12426589
申请日：2009-04-20
申请人： Hiroyuki SATO , Makoto NUMATA , Yo SAITO , Hitoshi TANAKA , Goro TAKEUCHI , Osamu TAGUCHI , Ryuichi TANAKA
发明人： Hiroyuki SATO , Makoto NUMATA , Yo SAITO , Hitoshi TANAKA , Goro TAKEUCHI , Osamu TAGUCHI , Ryuichi TANAKA
IPC分类号： H01C7/10
CPC分类号： H01C7/108 , H01C7/1006 , H01L23/62 , H01L23/647 , H01L33/641 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16268 , H01L2924/00014 , H01L2924/01046 , H01L2924/01079 , H01L2924/09701 , H01L2924/1305 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A varistor having a favorable heat-dissipating property is provided.In the varistor, a composite part having a favorable heat-dissipating property formed by a composite material composed of ZnO and Ag is arranged between main faces of a varistor matrix. Therefore, the heat transmitted from a semiconductor light-emitting device to a varistor part through an outer electrode can rapidly be transferred toward a main face on the opposite side through the composite part. In this varistor, side faces excluding inner side faces are exposed at side faces of the varistor matrix. Such a structure yields a favorable heat-dissipating property.
摘要翻译：提供具有良好的散热特性的变阻器。在变阻器中，通过由ZnO和Ag组成的复合材料形成的具有良好的散热特性的复合部件设置在压敏电阻矩阵的主面之间。因此，通过外部电极从半导体发光元件传递到变阻器部分的热量可以快速地通过复合部件向相反侧的主面转移。在该压敏电阻中，除了内侧面的侧面在压敏电阻矩阵的侧面露出。这种结构产生良好的散热性能。

2. 发明申请

US20100066479A1 MULTILAYER CHIP VARISTOR AND ELECTRONIC COMPONENT 有权
标题翻译：多层芯片变压器和电子元件
公开(公告)号：US20100066479A1
公开(公告)日：2010-03-18
申请号：US12536944
申请日：2009-08-06
申请人： Ryuichi TANAKA , Goro TAKEUCHI , Hiroyuki SATO , Osamu TAGUCHI
发明人： Ryuichi TANAKA , Goro TAKEUCHI , Hiroyuki SATO , Osamu TAGUCHI
IPC分类号： H01C7/10
CPC分类号： H01C7/10 , H01C7/102 , H01C7/18 , H01L2224/16225
摘要： A multilayer chip varistor is provided as one having excellent heat radiation performance. A thickness between a first principal face 3 and an outermost internal electrode layer 11A is smaller than a thickness between an internal electrode layer 21 and the outermost internal electrode layer 11A, and because of this configuration, heat generated from a bottom face of a semiconductor light emitting device LE1 is efficiently transferred to the outermost internal electrode layer 11A having a high thermal conductivity. Furthermore, in the multilayer chip varistor V1 of an electronic component EC1, the outermost internal electrode layer 11A has a first internal electrode 13 electrically connected to a first connection electrode 7 and a first terminal electrode 5 through first through-hole conductors 17, and a second internal electrode 15 electrically connected to a second connection electrode 8 and a second terminal electrode 6 through second through-hole conductors 27. Because of this configuration, heat H generated from the semiconductor light emitting device LE1 is transferred to both the first internal electrode 13 and the second internal electrode 15, so as to be transferred to the first through-hole conductors 17 and the second through-hole conductors 27. This leads to well-balanced transfer of heat to the first through-hole conductors 17 and the second through-hole conductors 27.
摘要翻译：提供具有优异的散热性能的多层芯片变阻器。第一主面3和最外侧内部电极层11A之间的厚度小于内部电极层21和最外侧内部电极层11A之间的厚度，并且由于该构造，从半导体光的底面产生的热量发光装置LE1被有效地传递到具有高导热性的最外层的内部电极层11A。此外，在电子部件EC1的多层片状变阻器V1中，最外侧的内部电极层11A具有通过第一通孔导体17与第一连接电极7和第一端子电极5电连接的第一内部电极13，第二内部电极15通过第二通孔导体27与第二连接电极8和第二端子电极6电连接。由此，半导体发光装置LE1产生的热H被传送到第一内部电极13 和第二内部电极15，以便转移到第一通孔导体17和第二通孔导体27中。这导致热量平衡地传递到第一通孔导体17和第二通孔导体17。孔导体27。

3. 发明申请

US20100052841A1 MULTILAYER CHIP VARISTOR 有权
标题翻译：多层芯片变量
公开(公告)号：US20100052841A1
公开(公告)日：2010-03-04
申请号：US12535307
申请日：2009-08-04
申请人： Hiroyuki SATO , Goro TAKEUCHI , Osamu TAGUCHI , Ryuichi TANAKA
发明人： Hiroyuki SATO , Goro TAKEUCHI , Osamu TAGUCHI , Ryuichi TANAKA
IPC分类号： H01C7/10
CPC分类号： H01C7/1006 , H01C1/142 , H01C1/148 , H01C7/18
摘要： A multilayer chip varistor is provided as one capable of suppressing production of cracks and thereby preventing a connection failure between an internal electrode and a through-hole conductor. An internal electrode 21 is so configured as to be curved toward a direction of penetration of a through hole 10 in a connection portion 28 thereof to a through-hole conductor 27. By this configuration, a region T sandwiched between a curved surface 28a of the connection portion 28 and the through-hole conductor 27 is formed in a varistor layer 9 near the connection portion 28. In this region T, a metal concentration thereof becomes higher because of diffusion of metal of the internal electrode 21 and the through-hole conductor 27 into the varistor layer 9, and therefore, after completion of firing, the region T has an intermediate contraction percentage between that of the internal electrode 21 and through-hole conductor 27 and that of the other region of the varistor layer 9. This permits the region T to relax stress near the connection portion 28 where the internal electrode 21, through-hole conductor 27, and varistor layer 9 are congested so as to readily produce cracks.
摘要翻译：提供了一种能够抑制裂纹的产生，从而防止内部电极和通孔导体之间的连接故障的多层芯片变阻器。内部电极21被构造成朝向连通部分28中的通孔10的穿透方向弯曲到通孔导体27.通过这种构造，夹持在通孔10的弯曲表面28a之间的区域T 连接部分28和通孔导体27形成在连接部分28附近的可变电阻层9中。在该区域T中，由于内部电极21和通孔导体的金属的扩散，金属浓度变高 27，因此，在烧成完成后，区域T的内部电极21和通孔导体27的中间收缩率与可变电阻层9的其他区域的中间收缩率成为中间收缩。区域T在内部电极21，通孔导体27和压敏电阻层9堵塞的连接部28附近松弛应力，容易产生裂纹。

4. 发明申请

US20090189732A1 AGGREGATE SUBSTRATE, PRODUCTION METHOD OF AGGREGATE SUBSTRATE, AND VARISTOR 有权
标题翻译：聚集基质，聚集基质的生产方法和变体
公开(公告)号：US20090189732A1
公开(公告)日：2009-07-30
申请号：US12275852
申请日：2008-11-21
申请人： Hiroyuki SATO , Yo SAITO , Ryuichi TANAKA , Makoto NUMATA , Goro TAKEUCHI
发明人： Hiroyuki SATO , Yo SAITO , Ryuichi TANAKA , Makoto NUMATA , Goro TAKEUCHI
IPC分类号： H01C7/10
CPC分类号： H01C7/1006 , H01C1/084 , H01C7/102
摘要： An aggregate substrate has a first varistor part, a second varistor part, and a heat dissipation layer The first varistor part includes a first varistor element layer to exhibit nonlinear voltage-current characteristics, and a plurality of first internal electrodes juxtaposed in the first varistor element layer. The second varistor part includes a second varistor element layer to exhibit nonlinear voltage-current characteristics, and a plurality of second internal electrodes juxtaposed in the second varistor element layer The heat dissipation layer is located between the first and second varistor parts and is in contact with the first and second varistor parts.
摘要翻译：聚集衬底具有第一变阻器部分，第二变阻器部分和散热层。第一变阻器部分包括呈现非线性电压电流特性的第一变阻器元件层和并置在第一变阻器元件中的多个第一内部电极层。第二变阻器部分包括呈现非线性电压电流特性的第二变阻器元件层和并置在第二变阻器元件层中的多个第二内部电极。散热层位于第一和第二变阻器部分之间，并与第一和第二变阻器部件。

5. 发明申请

US20080238604A1 VARISTOR AND LIGHT EMITTING DEVICE 有权
标题翻译：变压器和发光装置
公开(公告)号：US20080238604A1
公开(公告)日：2008-10-02
申请号：US12055671
申请日：2008-03-26
申请人： Hiroyuki SATO , Yo SAITO , Ryuichi TANAKA , Makoto NUMATA , Goro TAKEUCHI
发明人： Hiroyuki SATO , Yo SAITO , Ryuichi TANAKA , Makoto NUMATA , Goro TAKEUCHI
IPC分类号： H01C7/10
CPC分类号： H01C1/084 , H01C1/14 , H01C7/1006 , H01C7/18 , H01L25/167 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/14 , H01L2224/16225 , H01L2924/00014 , H01L2924/0002 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： In a varistor, a heat radiating portion contains the same components as ZnO that is the main component of a varistor element body, as metal oxides, thereby, the structural components of the varistor element body and the heat radiating portion are caused to be common. During firing, Ag contained in the heat radiating portion diffuses into the grain boundaries of ZnO, near the interface between surfaces of the heat radiating portion and the varistor element body. Consequently, in the varistor, cracks hardly occur between the varistor portion and the heat radiating portion during firing (or during binder removal), thereby, ensuring sufficient bonding strength between the varistor portion and the heat radiating portion. Therefore, heat conducted to the varistor portion is radiated efficiently conducting through electrically conducted paths formed in the heat radiating portion from the surface facing the varistor element body to other three surfaces of the heat radiating portion.
摘要翻译：在变阻器中，散热部包含与作为金属氧化物的可变电阻元件主体的主要成分的ZnO相同的成分，因此使可变电阻元件主体和散热部的结构成为普通的。在烧成期间，散热部中的Ag扩散到ZnO的晶界附近，靠近散热部和可变电阻元件主体的表面之间的界面。因此，在压敏电阻中，在烧结（或者去除粘合剂期间）在变阻器部分和散热部分之间几乎不发生裂纹，从而确保了可变电阻部分和散热部分之间的充分的接合强度。因此，传导到变阻器部分的热量从形成在散热部分的导电路径从与压敏电阻元件主体相对的表面有效地传导到散热部分的其它三个表面。

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