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1. 发明授权

US08734206B2 Polishing pad for chemical mechanical polishing process and chemical mechanical polishing apparatus including the same 有权
标题翻译：用于化学机械抛光工艺的抛光垫和包括其的化学机械抛光装置
公开(公告)号：US08734206B2
公开(公告)日：2014-05-27
申请号：US13036496
申请日：2011-02-28
申请人： One-Moon Chang , Jae-Phil Boo , Soo-Young Tak , Jong-Sun Ahn , Shin Kim , Kyoung-Moon Kang
发明人： One-Moon Chang , Jae-Phil Boo , Soo-Young Tak , Jong-Sun Ahn , Shin Kim , Kyoung-Moon Kang
IPC分类号： B24B1/00
CPC分类号： B24B41/06
摘要： A chemical mechanical polishing apparatus includes a platen configured to support and rotate a wafer, and a polishing pad facing the platen. The polishing pad includes a body having a groove with a rotational symmetric pattern.
摘要翻译：化学机械抛光装置包括被配置为支撑和旋转晶片的压板和面向压板的抛光垫。抛光垫包括具有旋转对称图案的凹槽的主体。

2. 发明授权

US08662958B2 Chemical-mechanical polishing apparatus for manufacturing semiconductor devices 失效
标题翻译：用于制造半导体器件的化学机械抛光装置
公开(公告)号：US08662958B2
公开(公告)日：2014-03-04
申请号：US12985048
申请日：2011-01-05
申请人： Jong-sun Ahn , In-seak Hwang , Soo-young Tak , Shin Kim , One-moon Chang
发明人： Jong-sun Ahn , In-seak Hwang , Soo-young Tak , Shin Kim , One-moon Chang
IPC分类号： B24B49/00
CPC分类号： B24B37/10 , B24B49/12
摘要： A chemical-mechanical polishing (CMP) apparatus for manufacturing a semiconductor device. The apparatus includes: a spin chuck for supporting and rotating a semiconductor wafer; a polisher comprising a polishing pad for planarizing a surface of the semiconductor wafer, the polisher moving along the surface of the semiconductor wafer by a polishing arm; and a polisher supporting device for supporting the polisher and maintaining the polisher in a horizontal state, while polishing an edge part of the surface of the semiconductor wafer, in order to improve polishing uniformity of a center part and the edge part of the semiconductor wafer. Accordingly, polishing uniformity of the center part and edge part of the semiconductor wafer may be improved, and a height of the polisher supporting device may be optimized according to a polishing degree. Also, the polisher may be easily supported, wear and tear of the support head may be minimized, and the support head may function as a conditioner.
摘要翻译：一种用于制造半导体器件的化学机械抛光（CMP）装置。该装置包括：用于支撑和旋转半导体晶片的旋转卡盘; 抛光机，包括用于平坦化半导体晶片的表面的抛光垫，抛光机通过抛光臂沿着半导体晶片的表面移动; 以及用于在抛光半导体晶片的表面的边缘部分的同时在支撑抛光机并将抛光机保持在水平状态的抛光机支撑装置，以便改善半导体晶片的中心部分和边缘部分的抛光均匀性。因此，可以提高半导体晶片的中心部分和边缘部分的抛光均匀性，并且可以根据抛光度来优化抛光机支撑装置的高度。此外，可以容易地支撑抛光机，可以使支撑头的磨损和撕裂最小化，并且支撑头可用作调节器。

3. 发明申请

US20110171882A1 CHEMICAL-MECHANICAL POLISHING APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICES 失效
标题翻译：用于制造半导体器件的化学机械抛光装置
公开(公告)号：US20110171882A1
公开(公告)日：2011-07-14
申请号：US12985048
申请日：2011-01-05
申请人： Jong-sun Ahn , In-seak Hwang , Soo-young Tak , Shin Kim , One-moon Chang
发明人： Jong-sun Ahn , In-seak Hwang , Soo-young Tak , Shin Kim , One-moon Chang
IPC分类号： B24B41/06 , B24B49/00
CPC分类号： B24B37/10 , B24B49/12
摘要： A chemical-mechanical polishing (CMP) apparatus for manufacturing a semiconductor device. The apparatus includes: a spin chuck for supporting and rotating a semiconductor wafer; a polisher comprising a polishing pad for planarizing a surface of the semiconductor wafer, the polisher moving along the surface of the semiconductor wafer by a polishing arm; and a polisher supporting device for supporting the polisher and maintaining the polisher in a horizontal state, while polishing an edge part of the surface of the semiconductor wafer, in order to improve polishing uniformity of a center part and the edge part of the semiconductor wafer. Accordingly, polishing uniformity of the center part and edge part of the semiconductor wafer may be improved, and a height of the polisher supporting device may be optimized according to a polishing degree. Also, the polisher may be easily supported, wear and tear of the support head may be minimized, and the support head may function as a conditioner.
摘要翻译：一种用于制造半导体器件的化学机械抛光（CMP）装置。该装置包括：用于支撑和旋转半导体晶片的旋转卡盘; 抛光机，包括用于平坦化半导体晶片的表面的抛光垫，抛光机通过抛光臂沿着半导体晶片的表面移动; 以及用于在抛光半导体晶片的表面的边缘部分的同时在支撑抛光机并将抛光机保持在水平状态的抛光机支撑装置，以便改善半导体晶片的中心部分和边缘部分的抛光均匀性。因此，可以提高半导体晶片的中心部分和边缘部分的抛光均匀性，并且可以根据抛光度来优化抛光机支撑装置的高度。此外，可以容易地支撑抛光机，可以使支撑头的磨损和撕裂最小化，并且支撑头可用作调节器。

4. 发明授权

US08790158B2 Chemical mechanical polishing apparatus 有权
标题翻译：化学机械抛光装置
公开(公告)号：US08790158B2
公开(公告)日：2014-07-29
申请号：US13033876
申请日：2011-02-24
申请人： One-Moon Chang , Jae-Phil Boo , Jong-Bok Kim , Soo-Young Tak , Jong-Sun Ahn , Shin Kim
发明人： One-Moon Chang , Jae-Phil Boo , Jong-Bok Kim , Soo-Young Tak , Jong-Sun Ahn , Shin Kim
IPC分类号： B24B49/03 , B24B49/12 , B24B37/04
CPC分类号： B24B41/06
摘要： A chemical mechanical polishing apparatus includes a platen having a first region configured to support a wafer, and a second region disposed outside the first region. The chemical mechanical polishing apparatus further includes a polishing pad disposed on the platen, a pad head to which the polishing pad is attached, a slurry supply configured to supply a slurry onto the wafer, and an injection port disposing on the second region of the platen. The injection port is configured to inject a predetermined gas to an edge of a bottom surface of the wafer and toward the outside of the wafer.
摘要翻译：化学机械抛光装置包括具有构造成支撑晶片的第一区域的压板和设置在第一区域外的第二区域。化学机械抛光装置还包括设置在压板上的抛光垫，附接有抛光垫的焊盘头，配置成将浆料供应到晶片上的浆料供应源和设置在压板的第二区域上的注入口。注入口被配置为将预定气体注入到晶片的底表面的边缘并朝向晶片的外部。

5. 发明申请

US20110217911A1 POLISHING PAD FOR CHEMICAL MECHANICAL POLISHING PROCESS AND CHEMICAL MECHANICAL POLISHING APPARATUS INCLUDING THE SAME 有权
标题翻译：化学机械抛光工艺抛光垫和化学机械抛光装置
公开(公告)号：US20110217911A1
公开(公告)日：2011-09-08
申请号：US13036496
申请日：2011-02-28
申请人： One-Moon CHANG , Jae-Phil Boo , Soo-Young Tak , Jong-Sun Ahn , Shin Kim , Kyoung-Moon Kang
发明人： One-Moon CHANG , Jae-Phil Boo , Soo-Young Tak , Jong-Sun Ahn , Shin Kim , Kyoung-Moon Kang
IPC分类号： B24B41/06
CPC分类号： B24B41/06
摘要： A chemical mechanical polishing apparatus includes a platen configured to support and rotate a wafer, and a polishing pad facing the platen. The polishing pad includes a body having a groove with a rotational symmetric pattern.
摘要翻译：化学机械抛光装置包括被配置为支撑和旋转晶片的压板和面向压板的抛光垫。抛光垫包括具有旋转对称图案的凹槽的主体。

6. 发明申请

US20110217910A1 CHEMICAL MECHANICAL POLISHING APPARATUS 有权
标题翻译：化学机械抛光装置
公开(公告)号：US20110217910A1
公开(公告)日：2011-09-08
申请号：US13033876
申请日：2011-02-24
申请人： One-Moon CHANG , Jae-Phil Boo , Jong-Bok Kim , Soo-Young Tak , Jong-Sun Ahn , Shin Kim
发明人： One-Moon CHANG , Jae-Phil Boo , Jong-Bok Kim , Soo-Young Tak , Jong-Sun Ahn , Shin Kim
IPC分类号： B24B41/06
CPC分类号： B24B41/06
摘要： A chemical mechanical polishing apparatus includes a platen having a first region configured to support a wafer, and a second region disposed outside the first region. The chemical mechanical polishing apparatus further includes a polishing pad disposed on the platen, a pad head to which the polishing pad is attached, a slurry supply configured to supply a slurry onto the wafer, and an injection port disposing on the second region of the platen. The injection port is configured to inject a predetermined gas to an edge of a bottom surface of the wafer and toward the outside of the wafer.
摘要翻译：化学机械抛光装置包括具有构造成支撑晶片的第一区域的压板和设置在第一区域外的第二区域。化学机械抛光装置还包括设置在压板上的抛光垫，附接有抛光垫的焊盘头，配置成将浆料供应到晶片上的浆料供应源和设置在压板的第二区域上的注入口。注入口被配置为将预定气体注入到晶片的底表面的边缘并朝向晶片的外部。

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