专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO1997030195A1 APPARATUS AND METHOD FOR PRODUCING CRYSTALS BY THE CZOCHRALSKI METHOD AND CRYSTALS PRODUCED BY THIS METHOD 审中-公开
标题翻译：用CZOCHRALSKI法生产水晶的方法和方法和通过该方法生产的晶体
公开(公告)号：WO1997030195A1
公开(公告)日：1997-08-21
申请号：PCT/JP1997000359
申请日：1997-02-12
申请人： SHIN-ETSU HANDOTAI CO., LTD. , SAKURADA, Masahiro , MIYAHARA, Yuichi , OHTA, Tomohiko
发明人： SHIN-ETSU HANDOTAI CO., LTD.
IPC分类号： C30B15/00
CPC分类号： C30B15/14 , C30B29/06 , C30B29/08 , C30B29/40 , C30B29/42 , C30B29/44
摘要： A method and apparatus for producing crystals by the Czochralski method whereby the thermal history during crystal growth according to the CZ method can be controlled with ease and accuracy. The apparatus comprises a crucible for receiving a raw material, a heater for heating and melting the raw material, and heat insulating tube disposed so as to surround the crucible and the heater, wherein a portion of the heat insulating tube that is located above an upper end of the heater is so configured that its inside diameter is larger than the outside diameter of the heater at its lower end, and that its inside diameter at its upper end is equal to or less than the inside diameter of the heater while its outside diameter is equal to or greater than the outside diameter of the heater. This apparatus is used to produce crystals and to control the temperature distribution there inside or the thermal history of crystals.
摘要翻译：用Czochralski法制造晶体的方法和装置，由此可以容易且准确地控制根据CZ方法的晶体生长期间的热历史。该装置包括用于接收原料的坩埚，用于加热和熔化原料的加热器，以及围绕坩埚和加热器设置的绝热管，其中位于上部上方的绝热管的一部分加热器的端部被配置为使得其内径大于其下端的加热器的外径，并且其上端的内径等于或小于加热器的内径，而其外径等于或大于加热器的外径。该装置用于生产晶体并控制其内部的温度分布或晶体的热历史。

2. 发明申请

WO0058472A9 ISOLATED DNA ENCODING CULLIN REGULATORS ROC1 AND ROC2, ISOLATED PROTEINS ENCODED BY THE SAME, AND METHODS UTILIZING THE SAME 审中-公开
标题翻译：编码CULLIN调节因子ROC1和ROC2的分离DNA，其编码的分离蛋白及其使用方法
公开(公告)号：WO0058472A9
公开(公告)日：2002-07-11
申请号：PCT/US0008592
申请日：2000-03-31
申请人： UNIV NORTH CAROLINA , XIONG YUE , OHTA TOMOHIKO
发明人： XIONG YUE , OHTA TOMOHIKO
IPC分类号： G01N33/50 , A61K45/00 , A61P43/00 , C07K14/47 , C07K16/18 , C12N1/15 , C12N1/19 , C12N1/21 , C12N5/10 , C12N15/09 , C12N15/12 , C12P21/02 , C12P21/08 , C12Q1/02 , C12Q1/68 , G01N33/15 , G01N33/53 , G01N33/566 , G01N33/577 , C12N15/11 , G01N33/68
CPC分类号： C07K14/4702
摘要： The present invention provides isolated polynucleotide sequences encoding the proteins ROC1 and ROC2 and host cells comprising the same. Methods of producing the ROC1 and ROC2 proteins are also disclosed, and methods of detecting the polynucleotides in samples are included in this invention, as are antibodies to the ROC1 and ROC2 proteins and antisense molecules complementary to polynucleotides encoding the same. The present invention further includes methods for screening bioactive agents that are capable of binding to an ROC protein, methods of screening bioactive agents capable of interfering with the binding of ROC proteins, and methods of screening bioactive agents capable of modulating the activity of an ROC protein. Pharmaceutical formulations comprising such pharmacologically active compounds and methods of administering the same are an additional aspect of this invention.
摘要翻译：本发明提供编码蛋白质ROC1和ROC2的分离的多核苷酸序列以及包含其的宿主细胞。还公开了生产ROC1和ROC2蛋白的方法，并且检测样品中多核苷酸的方法包括在本发明中，ROC1和ROC2蛋白的抗体以及与编码它们的多核苷酸互补的反义分子也是如此。本发明还包括用于筛选能够结合ROC蛋白的生物活性剂的方法，筛选能够干扰ROC蛋白结合的生物活性剂的方法以及筛选能够调节ROC蛋白活性的生物活性剂的方法。包含这种药理活性化合物的药物制剂及其施用方法是本发明的另外的方面。

3. 发明申请

WO0058472A8 ISOLATED DNA ENCODING CULLIN REGULATORS ROC1 AND ROC2, ISOLATED PROTEINS ENCODED BY THE SAME, AND METHODS UTILIZING THE SAME 审中-公开
标题翻译：编码CULLIN调节因子ROC1和ROC2的分离的DNA，由其编码的分离的蛋白，以及使用相同的方法
公开(公告)号：WO0058472A8
公开(公告)日：2001-06-21
申请号：PCT/US0008592
申请日：2000-03-31
申请人： UNIV NORTH CAROLINA , XIONG YUE , OHTA TOMOHIKO
发明人： XIONG YUE , OHTA TOMOHIKO
IPC分类号： G01N33/50 , A61K45/00 , A61P43/00 , C07K14/47 , C07K16/18 , C12N1/15 , C12N1/19 , C12N1/21 , C12N5/10 , C12N15/09 , C12N15/12 , C12P21/02 , C12P21/08 , C12Q1/02 , C12Q1/68 , G01N33/15 , G01N33/53 , G01N33/566 , G01N33/577 , C12N15/11 , G01N33/68
CPC分类号： C07K14/4702
摘要： The present invention provides isolated polynucleotide sequences encoding the proteins ROC1 and ROC2 and host cells comprising the same. Methods of producing the ROC1 and ROC2 proteins are also disclosed, and methods of detecting the polynucleotides in samples are included in this invention, as are antibodies to the ROC1 and ROC2 proteins and antisense molecules complementary to polynucleotides encoding the same. The present invention further includes methods for screening bioactive agents that are capable of binding to an ROC protein, methods of screening bioactive agents capable of interfering with the binding of ROC proteins, and methods of screening bioactive agents capable of modulating the activity of an ROC protein. Pharmaceutical formulations comprising such pharmacologically active compounds and methods of administering the same are an additional aspect of this invention.
摘要翻译：本发明提供了编码蛋白质ROC1和ROC2的分离的多核苷酸序列和包含其的宿主细胞。还公开了产生ROC1和ROC2蛋白的方法，检测样品中多核苷酸的方法包括在本发明中，ROC1和ROC2蛋白的抗体和与编码它们的多核苷酸互补的反义分子也包括在内。本发明进一步包括筛选能够结合ROC蛋白的生物活性剂的方法，筛选能够干扰ROC蛋白结合的生物活性剂的方法，以及筛选能够调节ROC蛋白活性的生物活性剂的方法。包含此类药理活性化合物的药物制剂及其给药方法是本发明的另一方面。

4. 发明申请

WO0058472A2 ISOLATED DNA ENCODING CULLIN REGULATORS ROC1 AND ROC2, ISOLATED PROTEINS ENCODED BY THE SAME, AND METHODS UTILIZING THE SAME 审中-公开
标题翻译：编码CULLIN调节因子ROC1和ROC2的分离的DNA，其编码的分离蛋白及其使用的方法
公开(公告)号：WO0058472A2
公开(公告)日：2000-10-05
申请号：PCT/US0008592
申请日：2000-03-31
申请人： UNIV NORTH CAROLINA , XIONG YUE , OHTA TOMOHIKO
发明人： XIONG YUE , OHTA TOMOHIKO
IPC分类号： G01N33/50 , A61K45/00 , A61P43/00 , C07K14/47 , C07K16/18 , C12N1/15 , C12N1/19 , C12N1/21 , C12N5/10 , C12N15/09 , C12N15/12 , C12P21/02 , C12P21/08 , C12Q1/02 , C12Q1/68 , G01N33/15 , G01N33/53 , G01N33/566 , G01N33/577 , C12N15/11 , G01N33/68
CPC分类号： C07K14/4702
摘要： The present invention provides isolated polynucleotide sequences encoding the proteins ROC1 and ROC2 and host cells comprising the same. Methods of producing the ROC1 and ROC2 proteins are also disclosed, and methods of detecting the polynucleotides in samples are included in this invention, as are antibodies to the ROC1 and ROC2 proteins and antisense molecules complementary to polynucleotides encoding the same. The present invention further includes methods for screening bioactive agents that are capable of binding to an ROC protein, methods of screening bioactive agents capable of interfering with the binding of ROC proteins, and methods of screening bioactive agents capable of modulating the activity of an ROC protein. Pharmaceutical formulations comprising such pharmacologically active compounds and methods of administering the same are an additional aspect of this invention.
摘要翻译：本发明提供编码蛋白质ROC1和ROC2的分离的多核苷酸序列以及包含其的宿主细胞。还公开了生产ROC1和ROC2蛋白的方法，并且检测样品中的多核苷酸的方法包括在本发明中，ROC1和ROC2蛋白的抗体以及与编码它们的多核苷酸互补的反义分子也是如此。本发明还包括用于筛选能够结合ROC蛋白的生物活性剂的方法，筛选能够干扰ROC蛋白结合的生物活性剂的方法，以及筛选能调节ROC蛋白活性的生物活性剂的方法。包含这种药理活性化合物的药物制剂及其施用方法是本发明的另外的方面。

5. 发明申请

WO1997021853A1 SINGLE CRYSTAL PRODUCTION APPARATUS AND PROCESS 审中-公开
标题翻译：单晶生产设备和工艺
公开(公告)号：WO1997021853A1
公开(公告)日：1997-06-19
申请号：PCT/JP1995002514
申请日：1995-12-08
申请人： SHIN-ETSU HANDOTAI CO., LTD. , OHTA, Tomohiko , SONOKAWA, Susumu , SOETA, Satoshi , KODAMA, Yoshihiro
发明人： SHIN-ETSU HANDOTAI CO., LTD.
IPC分类号： C30B15/00
CPC分类号： C30B29/40 , C30B15/14 , C30B15/206 , C30B29/06 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： An apparatus and process for producing single crystals according to the Czochralski method for pulling up crystals, wherein the production efficiency and qualities of the crystals can be improved by freely controlling the temperature distribution and heat history of the crystals to be pulled up. The invention relates to a production apparatus according to the Czochralski method provided with a cylinder (19) that is airtightly joined to the ceiling of a lift chamber at the upper end thereof and is closed up to the surface of a melt in a crucible at the lower end thereof and that surrounds coaxially the pulled single crystal bar, and is characterized in that the lower end of the cylinder is provided with a heat-barrier body (25) occupying 30-95 vol.% of the space that is enclosed by the crystal surface, the inner wall of a quartz crucible and the surface of a melt and has a height corresponding to the radius of the crystal to be pulled up from the melt; a process for producing single crystals with the use of the above apparatus; a method of controlling the temperature distribution and heat history of the crystals thus pulled up; and single crystals thus produced. As the apparatus is provided with a heat-barrier body (25) having a sufficient barrier effect, it does not cause any lowering in the velocity of pulling even when the diameter of the pulled single crystal is increased, can uniform the temperature at the whole solid-liquid boundary, does not lower the convention into singl crystals, and can control readily and accurately the temperature distribution and heat history of the crystals to be pulled up.
摘要翻译：用于提取晶体的根据Czochralski法制造单晶的装置和方法，其中可以通过自由地控制要拉起的晶体的温度分布和热历史来提高晶体的生产效率和质量。本发明涉及一种根据切克劳斯基法的生产设备，其具有气缸（19），该气缸（19）在其上端处气密地接合到提升室的天花板上，并在坩埚内的熔体表面封闭其下端并且同轴地围绕拉出的单晶棒，并且其特征在于，圆筒的下端设置有占据30-95体积％的空间的隔热体（25），该隔热体晶体表面，石英坩埚的内壁和熔体的表面，并且具有与从熔体拉起的晶体的半径相对应的高度; 使用上述装置制造单晶的方法; 控制由此提升的晶体的温度分布和热历史的方法; 和由此产生的单晶。由于该装置设置有具有足够的阻挡效果的隔热体（25），所以即使拉伸的单晶的直径增加也不会引起拉伸速度的任何降低，整体温度可以均匀固液边界，不能将惯例降低为单晶，并且可以容易地和准确地控制要拉起的晶体的温度分布和热历史。

6. 发明申请

WO0157293A9 SINGLE CRYSTAL GROWING DEVICE AND PRODUCTION METHOD OF SINGLE CRYSTAL USING THE DEVICE AND SINGLE CRYSTAL 审中-公开
标题翻译：单晶生长装置和使用装置和单晶的单晶的生产方法
公开(公告)号：WO0157293A9
公开(公告)日：2001-10-25
申请号：PCT/JP0100494
申请日：2001-01-25
申请人： SHINETSU HANDOTAI KK , HOSHI RYOJI , KITAGAWA KOJI , FUSEGAWA IZUMI , OHTA TOMOHIKO
发明人： HOSHI RYOJI , KITAGAWA KOJI , FUSEGAWA IZUMI , OHTA TOMOHIKO
IPC分类号： C30B15/14 , C30B15/20 , C30B29/06 , C30B15/00
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A single crystal growing device (20) comprising at least a main chamber (1) storing therein crucibles (5, 6) containing material melt (4) and a heater (7) for heating the material melt, and a pulling-up chamber (2) continuously provided to the upper portion of the main chamber, for pulling up and storing therein a grown single crystal, characterized in that the device further comprises a cooling tube (11) extending from at least the ceiling of the main chamber toward the melt surface so as to surround a single crystal (3) being pulled up and cooled forcibly by a cooling medium, and an auxiliary cooling member (13) extending downward beyond the cooling tube and being in a tubular or downwardly diameter-reduced shape, whereby it is possible to deliver a maximum cooling effect to a grown single crystal, speed up a crystal growth, and produce a single crystal safely without cooling medium leakage due to damages or the like.
摘要翻译：一种单晶生长装置（20），其至少包括存储有包含材料熔体（4）的坩埚（5,6）和用于加热材料熔体的加热器（7）的主室（1），以及提升室 2）连续地提供到主室的上部，用于在其中拉起并存储生长的单晶，其特征在于，所述装置还包括冷却管（11），所述冷却管从主室的至少天花板朝向熔体表面，以便围绕被冷却介质强制拉伸和冷却的单晶（3）;以及辅助冷却构件（13），其向下延伸超过冷却管并处于管状或向下直径缩小的形状，由此可以对生长的单晶提供最大的冷却效果，加速晶体生长，并且安全地制造单晶，而不会由于损坏等而导致冷却介质泄漏。

7. 发明授权

US5730800A Fused silica glass crucible 失效
标题翻译：熔融石英玻璃坩埚
公开(公告)号：US5730800A
公开(公告)日：1998-03-24
申请号：US768282
申请日：1996-12-17
申请人： Wataru Sato , Masahiro Sakurada , Ohta Tomohiko , Katsuhiko Kemmochi
发明人： Wataru Sato , Masahiro Sakurada , Ohta Tomohiko , Katsuhiko Kemmochi
IPC分类号： C03C3/06 , C30B15/00 , C30B15/10 , C30B35/00
CPC分类号： C30B29/06 , C03C3/06 , C30B15/10 , C30B35/002 , C03C2201/30 , C03C2201/32
摘要： An improved method is proposed for the preparation of a semiconductor silicon single crystal of N-type by the Czochralski process, which is free from the problem of occurrence of delayed OSFs as defects in the single crystal even after prolonged storage at room temperature based on the discovery that presence of a certain amount of aluminum in the melt of silicon contained in a fused silica glass crucible acts to suppress occurrence of delayed OSFs as a type of defects in the single crystal while copper as an impurity acts adversely in this regard. With a known fact that an about 30 .mu.m thick inner surface layer of the crucible is melted down into the silicon melt during the single crystal pulling-up process, namely, the invention proposes use of a crucible of which the inner surface layer of 30 .mu.m thickness contains aluminum in an average concentration of 40 to 500 ppm by weight while the content of copper is as low as possible not to exceed 0.5 ppb by weight. Alternatively, when the fused silica glass crucible is deficient in the content of aluminum, an amount of aluminum is introduced as a dopant into the melt of silicon in the crucible to supplement the content of aluminum in order to be sufficient to suppress delayed OSFs.
摘要翻译：提出了一种通过Czochralski工艺制备N型半导体硅单晶的改进方法，其即使在室温下长时间储存之后也不会出现延迟OSF作为单晶的缺陷的问题，基于发现在熔融石英玻璃坩埚中含有的硅熔体中存在一定量的铝作为抑制作为单晶中的缺陷的延迟OSF的发生，而作为杂质的铜在这方面起不利影响。在已知的事实中，在单晶提拉过程中坩埚的内表面层约30μm的内表面层熔化成硅熔体，即本发明提出使用内表面层为30的坩埚平均浓度为40〜500ppm的铝，而铜的含量尽可能低，不超过0.5ppb（重量）。或者，当熔融石英玻璃坩埚的铝含量不足时，将铝的量作为掺杂剂引入到坩埚中的硅熔体中，以补充铝的含量，以足以抑制延迟的OSF。

8. 发明授权

US5609682A Method for the preparation of silicon single crystal 失效
标题翻译：硅单晶的制备方法
公开(公告)号：US5609682A
公开(公告)日：1997-03-11
申请号：US498894
申请日：1995-07-06
申请人： Wataru Sato , Masahiro Sakurada , Ohta Tomohiko , Katsuhiko Kemmochi
发明人： Wataru Sato , Masahiro Sakurada , Ohta Tomohiko , Katsuhiko Kemmochi
IPC分类号： C03C3/06 , C30B15/00 , C30B15/10 , C30B35/00
CPC分类号： C30B29/06 , C03C3/06 , C30B15/10 , C30B35/002 , C03C2201/30 , C03C2201/32
摘要： An improved method is proposed for the preparation of a semiconductor silicon single crystal of N-type by the Czochralski process, which is free from the problem of occurrence of delayed OSFs as defects in the single crystal even after prolonged storage at room temperature based on the discovery that presence of a certain amount of aluminum in the melt of silicon contained in a fused silica glass crucible acts to suppress occurrence of delayed OSFs as a type of defects in the single crystal while copper as an impurity acts adversely in this regard. With a known fact that an about 30 .mu.m thick inner surface layer of the crucible is melted down into the silicon melt during the single crystal pulling-up process, namely, the invention proposes use of a crucible of which the inner surface layer of 30 .mu.m thickness contains aluminum in an average concentration of 40 to 500 ppm by weight while the content of copper is as low as possible not to exceed 0.5 ppb by weight. Alternatively, when the fused silica glass crucible is deficient in the content of aluminum, an amount of aluminum is introduced as a dopant into the melt of silicon in the crucible to supplement the content of aluminum in order to be sufficient to suppress delayed OSFs.
摘要翻译：提出了一种通过Czochralski工艺制备N型半导体硅单晶的改进方法，其即使在室温下长时间储存之后也不会出现延迟OSF作为单晶的缺陷的问题，基于发现在熔融石英玻璃坩埚中含有的硅熔体中存在一定量的铝作为抑制作为单晶中的缺陷的延迟OSF的发生，而作为杂质的铜在这方面起不利影响。在已知的事实中，在单晶提拉过程中坩埚的内表面层约30μm的内表面层熔化成硅熔体，即本发明提出使用内表面层为30的坩埚平均浓度为40〜500ppm的铝，而铜的含量尽可能低，不超过0.5ppb（重量）。或者，当熔融石英玻璃坩埚的铝含量不足时，将铝的量作为掺杂剂引入到坩埚中的硅熔体中，以补充铝的含量，以足以抑制延迟的OSF。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式