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1. 发明授权

US5730800A Fused silica glass crucible 失效
标题翻译：熔融石英玻璃坩埚
公开(公告)号：US5730800A
公开(公告)日：1998-03-24
申请号：US768282
申请日：1996-12-17
申请人： Wataru Sato , Masahiro Sakurada , Ohta Tomohiko , Katsuhiko Kemmochi
发明人： Wataru Sato , Masahiro Sakurada , Ohta Tomohiko , Katsuhiko Kemmochi
IPC分类号： C03C3/06 , C30B15/00 , C30B15/10 , C30B35/00
CPC分类号： C30B29/06 , C03C3/06 , C30B15/10 , C30B35/002 , C03C2201/30 , C03C2201/32
摘要： An improved method is proposed for the preparation of a semiconductor silicon single crystal of N-type by the Czochralski process, which is free from the problem of occurrence of delayed OSFs as defects in the single crystal even after prolonged storage at room temperature based on the discovery that presence of a certain amount of aluminum in the melt of silicon contained in a fused silica glass crucible acts to suppress occurrence of delayed OSFs as a type of defects in the single crystal while copper as an impurity acts adversely in this regard. With a known fact that an about 30 .mu.m thick inner surface layer of the crucible is melted down into the silicon melt during the single crystal pulling-up process, namely, the invention proposes use of a crucible of which the inner surface layer of 30 .mu.m thickness contains aluminum in an average concentration of 40 to 500 ppm by weight while the content of copper is as low as possible not to exceed 0.5 ppb by weight. Alternatively, when the fused silica glass crucible is deficient in the content of aluminum, an amount of aluminum is introduced as a dopant into the melt of silicon in the crucible to supplement the content of aluminum in order to be sufficient to suppress delayed OSFs.
摘要翻译：提出了一种通过Czochralski工艺制备N型半导体硅单晶的改进方法，其即使在室温下长时间储存之后也不会出现延迟OSF作为单晶的缺陷的问题，基于发现在熔融石英玻璃坩埚中含有的硅熔体中存在一定量的铝作为抑制作为单晶中的缺陷的延迟OSF的发生，而作为杂质的铜在这方面起不利影响。在已知的事实中，在单晶提拉过程中坩埚的内表面层约30μm的内表面层熔化成硅熔体，即本发明提出使用内表面层为30的坩埚平均浓度为40〜500ppm的铝，而铜的含量尽可能低，不超过0.5ppb（重量）。或者，当熔融石英玻璃坩埚的铝含量不足时，将铝的量作为掺杂剂引入到坩埚中的硅熔体中，以补充铝的含量，以足以抑制延迟的OSF。

2. 发明授权

US5609682A Method for the preparation of silicon single crystal 失效
标题翻译：硅单晶的制备方法
公开(公告)号：US5609682A
公开(公告)日：1997-03-11
申请号：US498894
申请日：1995-07-06
申请人： Wataru Sato , Masahiro Sakurada , Ohta Tomohiko , Katsuhiko Kemmochi
发明人： Wataru Sato , Masahiro Sakurada , Ohta Tomohiko , Katsuhiko Kemmochi
IPC分类号： C03C3/06 , C30B15/00 , C30B15/10 , C30B35/00
CPC分类号： C30B29/06 , C03C3/06 , C30B15/10 , C30B35/002 , C03C2201/30 , C03C2201/32
摘要： An improved method is proposed for the preparation of a semiconductor silicon single crystal of N-type by the Czochralski process, which is free from the problem of occurrence of delayed OSFs as defects in the single crystal even after prolonged storage at room temperature based on the discovery that presence of a certain amount of aluminum in the melt of silicon contained in a fused silica glass crucible acts to suppress occurrence of delayed OSFs as a type of defects in the single crystal while copper as an impurity acts adversely in this regard. With a known fact that an about 30 .mu.m thick inner surface layer of the crucible is melted down into the silicon melt during the single crystal pulling-up process, namely, the invention proposes use of a crucible of which the inner surface layer of 30 .mu.m thickness contains aluminum in an average concentration of 40 to 500 ppm by weight while the content of copper is as low as possible not to exceed 0.5 ppb by weight. Alternatively, when the fused silica glass crucible is deficient in the content of aluminum, an amount of aluminum is introduced as a dopant into the melt of silicon in the crucible to supplement the content of aluminum in order to be sufficient to suppress delayed OSFs.
摘要翻译：提出了一种通过Czochralski工艺制备N型半导体硅单晶的改进方法，其即使在室温下长时间储存之后也不会出现延迟OSF作为单晶的缺陷的问题，基于发现在熔融石英玻璃坩埚中含有的硅熔体中存在一定量的铝作为抑制作为单晶中的缺陷的延迟OSF的发生，而作为杂质的铜在这方面起不利影响。在已知的事实中，在单晶提拉过程中坩埚的内表面层约30μm的内表面层熔化成硅熔体，即本发明提出使用内表面层为30的坩埚平均浓度为40〜500ppm的铝，而铜的含量尽可能低，不超过0.5ppb（重量）。或者，当熔融石英玻璃坩埚的铝含量不足时，将铝的量作为掺杂剂引入到坩埚中的硅熔体中，以补充铝的含量，以足以抑制延迟的OSF。

3. 发明授权

US5704973A Apparatus and method for the uniform distribution of crystal defects upon a silicon single crystal 失效
标题翻译：在硅单晶上均匀分布晶体缺陷的装置和方法
公开(公告)号：US5704973A
公开(公告)日：1998-01-06
申请号：US666654
申请日：1996-06-18
申请人： Masahiro Sakurada , Wataru Sato , Tomohiko Ohta
发明人： Masahiro Sakurada , Wataru Sato , Tomohiko Ohta
IPC分类号： C30B15/00 , C30B15/20 , C30B29/06 , C30B33/02 , H01L21/208
CPC分类号： C30B29/06 , C30B15/00 , Y10T117/1032
摘要： Proposed is an improvement in the method and single crystal growing chamber for the preparation of a single crystal rod of silicon by the Czochralski method, according to which the distance between the surface of the melt of silicon contained in a crucible and the lower surface of the top wall of the crystal growing chamber is equal to or larger than the diameter of the crucible and the heat-insulating cylinder surrounding the crucible containing the melt of silicon and the heater has such a height as to reach the lower surface of the top wall of the chamber so as to keep the single crystal rod under growing is kept at a temperature not lower than 700.degree. C. until reaching the lower surface of the top wall of the chamber thereby decreasing the density of the crystal defects of BMD type in the seed end of the single crystal rod as grown so that the uniformity in the distribution of BMD density is increased throughout the single crystal rod.
摘要翻译：提出了通过切克劳斯基法（Czochralski method）制备单晶硅的方法和单晶生长室的改进，根据该方法，坩埚中包含的硅熔体表面与坩埚的下表面之间的距离晶体生长室的顶壁等于或大于坩埚的直径，并且包含硅和加热器的熔体的坩埚周围的隔热圆筒具有如下高度：到达顶壁的下表面保持单晶棒生长的室保持在不低于700℃的温度，直到到达室的顶壁的下表面，从而降低种子中BMD型晶体缺陷的密度生长的单晶棒的端部，使得在整个单晶棒中BMD密度分布的均匀性增加。

4. 外观设计

USD592712S1 Toy 有权
公开(公告)号：USD592712S1
公开(公告)日：2009-05-19
申请号：US29293923
申请日：2007-12-18
申请人： Wataru Sato , Noriyoshi Matsumura
设计人： Wataru Sato , Noriyoshi Matsumura

5. 外观设计

USD589570S1 Toy 有权
公开(公告)号：USD589570S1
公开(公告)日：2009-03-31
申请号：US29293820
申请日：2007-12-13
申请人： Wataru Sato , Noriyoshi Matsumura
设计人： Wataru Sato , Noriyoshi Matsumura

6. 外观设计

USD589569S1 Toy 有权
公开(公告)号：USD589569S1
公开(公告)日：2009-03-31
申请号：US29292039
申请日：2007-09-26
申请人： Wataru Sato , Noriyoshi Matsumura
设计人： Wataru Sato , Noriyoshi Matsumura

7. 发明申请

US20150211781A1 AIR HEAT EXCHANGER 有权
标题翻译：空气热交换器
公开(公告)号：US20150211781A1
公开(公告)日：2015-07-30
申请号：US14405408
申请日：2012-06-07
申请人： Wataru Sato , Shigeyuki Sasaki
发明人： Wataru Sato , Shigeyuki Sasaki
IPC分类号： F25D21/14
CPC分类号： F25D21/14 , F25B39/02 , F28D1/05383 , F28D2021/0071 , F28F1/128 , F28F1/325 , F28F17/005
摘要： Provided is an air heat exchanger capable of preventing an increase in ventilation resistance and a decrease in heat exchange efficiency due to condensation water generated on surfaces of heat transfer fins, without increasing thermal resistance of flat tubes and the heat transfer fins, and preventing scattering of water droplets downwind from the heat transfer fins. In the air heat exchanger including a plurality of flat tubes 2 and heat transfer fins 5 provided between the flat tubes 2 and on which air is blown, the flat tubes 2 include water draining grooves 4 on side surfaces on which the heat transfer fins 5 are provided and the heat transfer fins 5 include water guiding grooves 6 communicating with the water draining grooves 4. At least a groove wall 40 on the upwind side of an air blowing direction 10 among groove walls forming the water guiding grooves 6 is provided from a position of the upwind side from the water draining grooves 4 to the water draining grooves 4. The water guiding grooves 6 extend toward the water draining grooves 4 along the groove wall 40 on the upwind side and an area of a cross section perpendicular to an extension direction decreases toward the water draining grooves 4.
摘要翻译：提供一种空气热交换器，其能够防止由于传热翅片表面产生的冷凝水导致的通风阻力增加和热交换效率降低，而不增加扁平管和传热翅片的热阻，并且防止散热水滴从传热翅片向下风向。在包括设置在扁平管2之间的多个扁平管2和传热翅片5的空气热交换器中，扁平管2包括在其上具有传热翅片5的侧表面上的排水槽4 传热翅片5包括与排水槽4连通的导水槽6.至少在形成导水槽6的槽壁中的吹风方向10的上风侧的槽壁40从位置从排水沟4向排水槽4的上风侧。导水槽6沿着上下风向侧的槽壁40向排水槽4延伸，与延伸方向垂直的截面的区域朝向排水槽4减少。

8. 发明授权

US08997374B2 Drying furnace and drying method 有权
标题翻译：干燥炉和干燥方法
公开(公告)号：US08997374B2
公开(公告)日：2015-04-07
申请号：US13699520
申请日：2011-05-24
申请人： Wataru Sato
发明人： Wataru Sato
IPC分类号： F26B3/28 , F26B15/16 , F26B3/30 , B05D3/02
CPC分类号： F26B3/283 , B05D3/0263 , B05D3/0272 , F26B3/30 , F26B15/16 , F26B2210/12
摘要： A drying furnace (20) for drying an object (11) by hot air is provided with a heater (36, 38, 43, 45) that applies radiant heat to a hard-heating region (35, 42) having a larger heat capacity than the other region (37, 44) in the object (11) so as to heat the hard-heating region (35, 42) to a temperature approximate to a temperature of the other region (37, 44).
摘要翻译：用热空气对物体（11）进行干燥的干燥炉（20）具有向具有较大热容量的硬质加热区域（35,42）施加辐射热的加热器（36,38,43,45）使得加热区域（35,42）加热到接近其他区域（37,44）的温度的温度。

9. 发明授权

US07902282B2 Pressure-sensitive adhesive containing near infrared absorbing coloring matter 失效
标题翻译：含有近红外吸收色素的压敏胶
公开(公告)号：US07902282B2
公开(公告)日：2011-03-08
申请号：US11911919
申请日：2006-04-28
申请人： Wataru Sato , Kumiko Okamoto , Yasuyo Saito , Masahiro Kawashima , Takeshi Kaneda
发明人： Wataru Sato , Kumiko Okamoto , Yasuyo Saito , Masahiro Kawashima , Takeshi Kaneda
IPC分类号： C08K5/00 , C07F15/00
CPC分类号： C09B67/0097 , C08K5/0041 , C08K5/0091 , C09B67/0013 , C09B67/0063 , C09J11/06
摘要： A pressure-sensitive adhesive containing a near infrared absorbing dye having excellent shielding function for near infrared rays and excellent in durability is provided. In a light resistance test, a layer of the pressure-sensitive adhesive having a thickness of 25±5 μm has an absorption intensity at the maximum absorption wavelength of the near infrared absorbing dye after a light resistance test of 50% or more of the absorption intensity before the test in which light with an irradiance of 64.5 W/m2 at a wavelength of 300 to 400 nm is irradiated on the layer for 160 hours.
摘要翻译：提供了含有对近红外线具有优异屏蔽功能的近红外吸收染料和耐久性优异的压敏粘合剂。在耐光性试验中，厚度为25±5μm的压敏粘合剂层在耐光性试验后吸收强度在近红外线吸收染料的最大吸收波长为50％以上在该层上照射在波长为300〜400nm的辐照度为64.5W / m 2的光下进行160小时的试验前的强度。

10. 外观设计

USD590455S1 Toy 有权
公开(公告)号：USD590455S1
公开(公告)日：2009-04-14
申请号：US29292051
申请日：2007-09-26
申请人： Wataru Sato , Noriyoshi Matsumura
设计人： Wataru Sato , Noriyoshi Matsumura

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