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1. 发明授权

US5160560A Method of producing optically flat surfaces on processed silicon wafers 失效
标题翻译：在加工硅膜上生产光学平面的方法
公开(公告)号：US5160560A
公开(公告)日：1992-11-03
申请号：US201809
申请日：1988-06-02
申请人： Murray S. Welkowsky , P. K. Vasudev , Philip G. Reif , Norman W. Goodwin
发明人： Murray S. Welkowsky , P. K. Vasudev , Philip G. Reif , Norman W. Goodwin
IPC分类号： B23Q3/15 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/683
CPC分类号： H01L21/6833 , H01L21/302 , Y10S148/012 , Y10S148/135
摘要： A method for producing optically flat thin semiconductor wafers (12) bonded to a substrate (16). The wafer (12) is bonded without touching the top surface of the wafer (12). Also, the bond is created without the use of pressure. Electrostatic bonding, or contact bonding or both may be employed. After the wafer (12) is bonded, it is then polished to a desired thickness and flatness. After contact bonding and polishing the wafer (12) may then be removed for further processing. The wafer may then be contact bonded to a final substrate (b 34) or electrostatically bonded to a final substrate (42). The contact bonding technique may also be employed as a means for holding the wafer (12) during precise photolithography. The optical flatness achieved permits improved yields over conventional means for securing wafers during photolithography. The electrostatic bonding technique permits extremely thin optically flat silicon wafers to be produced.
摘要翻译：一种用于制造结合到基板（16）的光学平坦的薄的半导体晶片（12）的方法。接合晶片（12）而不接触晶片（12）的顶表面。此外，债券是在不使用压力的情况下创建的。可以使用静电粘合或接触粘合或两者。在晶片（12）接合之后，然后将其抛光至期望的厚度和平坦度。接触结合和抛光之后，可以移除晶片（12）以便进一步处理。然后可以将晶片与最终的基板（b 34）接触或静电地结合到最终的基板（42）上。接触接合技术也可以用作在精确光刻期间保持晶片（12）的手段。所获得的光学平整度允许相对于用于在光刻期间固定晶片的常规手段提高的产量。静电接合技术允许制造极薄的光学平坦硅晶片。

2. 发明授权

US4523067A Temperature gradient zone melting apparatus 失效
标题翻译：温度梯度区熔化装置
公开(公告)号：US4523067A
公开(公告)日：1985-06-11
申请号：US366901
申请日：1982-04-09
申请人： Roger H. Brown , Kuen Chow , Norman W. Goodwin , Jan Grinberg
发明人： Roger H. Brown , Kuen Chow , Norman W. Goodwin , Jan Grinberg
IPC分类号： C30B13/02 , H01L21/24 , H05B6/10
CPC分类号： H01L21/24 , C30B13/02
摘要： An apparatus is provided for fabricating a semiconductor device by thermal gradient zone melting, whereby metal-rich droplets such as aluminum migrate through a semiconductor wafer such as silicon to create conductive paths. One surface of the wafer is placed directly on a heating surface to establish a high and uniform thermal gradient through the wafer. Heat in the wafer is removed from the other wafer surface. The apparatus for fabricating semiconductor devices utilizing temperature gradient zone melting comprises a base, heating means and heat sink means. Heating means comprises a platform having a generally planar heating surface adapted to receive the entire area of the one surface of at least one wafer. The heat sink means is spaced away from the other wafer surface to form a space therebetween, the space being adapted to receive a high heat conductive gas. The heat sink means and the gas cooperatively remove the heat in the wafer to enhance the establishment of the thermal gradient.
摘要翻译：提供了一种用于通过热梯度区熔化来制造半导体器件的装置，由此诸如铝的富金属液滴迁移通过诸如硅的半导体晶片以产生导电路径。将晶片的一个表面直接放置在加热表面上，以建立穿过晶片的高均匀的热梯度。将晶片中的热量从另一晶片表面移除。利用温度梯度区熔化制造半导体器件的装置包括基座，加热装置和散热装置。加热装置包括具有适于接收至少一个晶片的一个表面的整个区域的大致平面加热表面的平台。散热装置与另一个晶片表面间隔开以形成它们之间的空间，该空间适于接收高导热气体。散热装置和气体协同地去除晶片中的热量以增强热梯度的建立。

3. 发明授权

US4913531A Liquid crystal light valve with grooved microgrid and method of forming the same 失效
标题翻译：液晶光阀带槽式微格栅及其形成方法
公开(公告)号：US4913531A
公开(公告)日：1990-04-03
申请号：US241680
申请日：1988-09-07
申请人： Uzi Efron , Murray S. Welkowsky , Norman W. Goodwin
发明人： Uzi Efron , Murray S. Welkowsky , Norman W. Goodwin
IPC分类号： G02F1/135
CPC分类号： G02F1/1354 , Y10S359/90
摘要： A liquid crystal light valve is provided with a microgrid of grooves in the photoconductor surface to divide the photoconductor into high resolution pixels. The liquid crystals fill the grooves to seal them and contribute to a potential barrier at the grooves that prevents lateral charge migration between pixels. In a metal oxide semiconductor (MOS) embodiment an oxide layer extends over the pixels and partially overhangs the grooves. A metal matrix mirror is formed over the insulative layer, and extends into a portion of the grooves to shield the underlying silicon from photoactivation while maintaining an electrical isolation between pixels.
摘要翻译：液晶光阀在光电导体表面设置有微电网槽，以将感光体分成高分辨率像素。液晶填充沟槽以密封它们并且有助于凹槽处的势垒，从而防止像素之间的横向电荷迁移。在金属氧化物半导体（MOS）实施例中，氧化物层在像素上延伸并且部分地突出于凹槽。金属矩阵反射镜形成在绝缘层之上，并且延伸到凹槽的一部分中以屏蔽下面的硅免受光激活，同时保持像素之间的电隔离。

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