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1. 发明授权

US08957347B2 Method of detecting condensing spot position in laser beam processing apparatus 有权
标题翻译：检测激光束处理装置中聚光点位置的方法
公开(公告)号：US08957347B2
公开(公告)日：2015-02-17
申请号：US13617046
申请日：2012-09-14
申请人： Toshiyuki Yoshikawa , Hironari Ohkubo , Noboru Takeda
发明人： Toshiyuki Yoshikawa , Hironari Ohkubo , Noboru Takeda
IPC分类号： H01L21/30 , H01L21/304 , B23K26/00 , B23K26/04 , B23K26/40
CPC分类号： B23K26/048 , B23K26/00 , B23K26/0006 , B23K26/40 , B23K2103/50 , B23K2103/56 , H01L21/30 , H01L21/304 , H01L21/3043 , H01L2221/00
摘要： A method of detecting a condensing spot position in a laser beam processing apparatus, including: a detection position setting step of setting a plurality of Z-axis directional positions in a range from a starting point to an ending point of detection positions into which the condenser is positioned; a laser beam processed groove forming step of sequentially positioning the condenser into the detection positions in the range from the starting point to the ending point, performing a predetermined interval indexing feeding by operating indexing feeding means each time the detection position for the condenser is changed, and forming a laser beam processed groove of a predetermined length in the plate-shaped body at each of the detection positions for the condenser; and a laser beam processed groove imaging step of imaging the laser beam processed grooves formed in the plate-shaped body by imaging means.
摘要翻译：一种检测激光束处理装置中的聚光点位置的方法，包括：检测位置设定步骤，在从所述冷凝器的检测位置的起始点到终点的范围内设定多个Z轴方向位置定位激光束处理槽形成步骤，将冷凝器顺序地定位在从起点到终点的范围内的检测位置，每当改变冷凝器的检测位置时，通过操作分度输送装置执行预定的间隔分度进给，以及在所述冷凝器的每个检测位置处，在所述板状体中形成预定长度的激光束处理槽; 以及激光束处理槽成像步骤，通过成像装置对形成在板状体中的激光束处理槽进行成像。

2. 发明授权

US08252667B2 Laser processing method for semiconductor wafer 有权
标题翻译：半导体晶圆的激光加工方法
公开(公告)号：US08252667B2
公开(公告)日：2012-08-28
申请号：US12771749
申请日：2010-04-30
申请人： Hiroshi Morikazu , Noboru Takeda , Hirokazu Matsumoto
发明人： Hiroshi Morikazu , Noboru Takeda , Hirokazu Matsumoto
IPC分类号： H01L21/301
CPC分类号： H01L21/78 , B23K26/0006 , B23K26/0626 , B23K26/40 , B23K2103/50 , B23K2103/56 , H01L21/67132 , H01L21/67144 , H01L21/6836 , H01L2221/68327 , H01L2221/68336
摘要： A laser processing method for a semiconductor wafer including a groove forming step of applying a pulsed laser beam having an absorption wavelength to the semiconductor wafer along a division line formed on the semiconductor wafer to thereby form a laser processed groove along the division lines on the semiconductor wafer, wherein the pulse width of the pulsed laser beam to be applied in the groove forming step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm2.
摘要翻译：一种半导体晶片的激光加工方法，包括：槽形成工序，沿着形成在半导体晶片上的分割线，向半导体晶片施加具有吸收波长的脉冲激光束，从而沿着半导体上的分割线形成激光加工槽晶片，其中在槽形成步骤中施加的脉冲激光束的脉冲宽度设定为2ns以下，峰值能量密度设定在5〜200GW / cm 2的范围内。

3. 发明授权

US08258045B2 Device processing method 有权
标题翻译：设备处理方法
公开(公告)号：US08258045B2
公开(公告)日：2012-09-04
申请号：US12770290
申请日：2010-04-29
申请人： Hiroshi Morikazu , Noboru Takeda , Hirokazu Matsumoto
发明人： Hiroshi Morikazu , Noboru Takeda , Hirokazu Matsumoto
IPC分类号： H01L21/301
CPC分类号： H01L21/67092 , B23K26/032 , B23K26/0622 , B23K26/0648 , B23K26/073 , B23K26/082 , B23K26/0853 , B23K26/0876 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/78
摘要： A device processing method for improving the die strength of a device divided from a semiconductor wafer. The device processing method includes a chamfering step of applying a pulsed laser beam having an absorption wavelength to the device along the periphery of the device to thereby chamfer the periphery of the device, wherein the pulse width of the pulsed laser beam to be applied in the chamfering step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm2.
摘要翻译：一种用于提高从半导体晶片划分的器件的裸片强度的器件处理方法。该装置处理方法包括：倒角步骤，沿着装置的周边向器件施加具有吸收波长的脉冲激光束，从而使装置的周边倒角，其中施加在该装置中的脉冲激光束的脉冲宽度倒角步长设定为2ns以下，峰值能量密度设定在5〜200GW / cm 2的范围。

4. 发明申请

US20060035411A1 Laser processing method 审中-公开
标题翻译：激光加工方法
公开(公告)号：US20060035411A1
公开(公告)日：2006-02-16
申请号：US11200142
申请日：2005-08-10
申请人： Ryugo Oba , Kenji Furuta , Hitoshi Hoshino , Nobuyasu Kitahara , Noboru Takeda
发明人： Ryugo Oba , Kenji Furuta , Hitoshi Hoshino , Nobuyasu Kitahara , Noboru Takeda
IPC分类号： H01L21/50
CPC分类号： H01L21/78 , B23K26/0622 , B23K26/0736 , B23K26/364 , B23K26/40 , B23K2103/50
摘要： A laser processing method for forming a laser groove along dividing lines by applying a pulse laser beam along the dividing lines formed on a workpiece, the method comprising the steps of forming the focusing spot of the pulse laser beam in a shape of oval, positioning the long axis of the oval focusing spot along each of the dividing lines, and moving the focusing spot and the workpiece along the dividing line relative to each other.
摘要翻译：一种激光加工方法，通过沿着形成在工件上的分割线施加脉冲激光束沿着分割线形成激光槽，该方法包括以下步骤：将脉冲激光束的聚焦点形成为椭圆形，沿着每条分割线的椭圆形聚焦点的长轴，并且使聚焦点和工件沿分割线相对于彼此移动。

5. 发明申请

US20100297855A1 DEVICE PROCESSING METHOD 有权
标题翻译：设备处理方法
公开(公告)号：US20100297855A1
公开(公告)日：2010-11-25
申请号：US12770290
申请日：2010-04-29
申请人： Hiroshi Morikazu , Noboru Takeda , Hirokazu Matsumoto
发明人： Hiroshi Morikazu , Noboru Takeda , Hirokazu Matsumoto
IPC分类号： H01L21/302
CPC分类号： H01L21/67092 , B23K26/032 , B23K26/0622 , B23K26/0648 , B23K26/073 , B23K26/082 , B23K26/0853 , B23K26/0876 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/78
摘要： A device processing method for improving the die strength of a device divided from a semiconductor wafer. The device processing method includes a chamfering step of applying a pulsed laser beam having an absorption wavelength to the device along the periphery of the device to thereby chamfer the periphery of the device, wherein the pulse width of the pulsed laser beam to be applied in the chamfering step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm2.
摘要翻译：一种用于提高从半导体晶片划分的器件的裸片强度的器件处理方法。该装置处理方法包括：倒角步骤，沿着装置的周边向器件施加具有吸收波长的脉冲激光束，从而使装置的周边倒角，其中施加在该装置中的脉冲激光束的脉冲宽度倒角步长设定为2ns以下，峰值能量密度设定在5〜200GW / cm 2的范围。

6. 发明申请

US20100297830A1 LASER PROCESSING METHOD FOR SEMICONDUCTOR WAFER 有权
标题翻译：用于半导体波长的激光加工方法
公开(公告)号：US20100297830A1
公开(公告)日：2010-11-25
申请号：US12771749
申请日：2010-04-30
申请人： Hiroshi Morikazu , Noboru Takeda , Hirokazu Matsumoto
发明人： Hiroshi Morikazu , Noboru Takeda , Hirokazu Matsumoto
IPC分类号： H01L21/268
CPC分类号： H01L21/78 , B23K26/0006 , B23K26/0626 , B23K26/40 , B23K2103/50 , B23K2103/56 , H01L21/67132 , H01L21/67144 , H01L21/6836 , H01L2221/68327 , H01L2221/68336
摘要： A laser processing method for a semiconductor wafer including a groove forming step of applying a pulsed laser beam having an absorption wavelength to the semiconductor wafer along a division line formed on the semiconductor wafer to thereby form a laser processed groove along the division lines on the semiconductor wafer, wherein the pulse width of the pulsed laser beam to be applied in the groove forming step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm2.
摘要翻译：一种半导体晶片的激光加工方法，包括：槽形成工序，沿着形成在半导体晶片上的分割线，向半导体晶片施加具有吸收波长的脉冲激光束，从而沿着半导体上的分割线形成激光加工槽晶片，其中在槽形成步骤中施加的脉冲激光束的脉冲宽度设定为2ns以下，峰值能量密度设定在5〜200GW / cm 2的范围内。

7. 发明授权

US07642485B2 Laser beam processing machine 有权
标题翻译：激光束加工机
公开(公告)号：US07642485B2
公开(公告)日：2010-01-05
申请号：US11338761
申请日：2006-01-25
申请人： Noboru Takeda , Hiroshi Morikazu , Satoshi Genda , Yukio Morishige
发明人： Noboru Takeda , Hiroshi Morikazu , Satoshi Genda , Yukio Morishige
IPC分类号： B23K26/02
CPC分类号： B23K37/0235 , B23K26/0622 , B23K26/0853 , B23K26/0876 , B23K26/40 , B23K37/0408 , B23K37/0435 , B23K2103/172 , B23K2103/50
摘要： A laser beam processing machine comprising a chuck table for holding a workpiece, a laser beam application means for applying a laser beam to the workpiece held on the chuck table, and a processing-feed means for moving the chuck table and the laser beam application means relative to each other, wherein the chuck table comprises a body and a workpiece holding member disposed on the top surface of the body, and the workpiece holding member is made of a material which transmits a laser beam having a predetermined wavelength.
摘要翻译：一种激光束处理机，包括用于保持工件的卡盘台，用于将激光束施加到保持在卡盘台上的工件的激光束施加装置，以及用于移动卡盘台和激光束施加装置的加工进给装置相对于彼此，其中所述卡盘台包括主体和设置在所述主体的顶表面上的工件保持构件，并且所述工件保持构件由透射具有预定波长的激光束的材料制成。

8. 发明申请

US20060203222A1 Wafer holding mechanism 有权
标题翻译：晶圆保持机构
公开(公告)号：US20060203222A1
公开(公告)日：2006-09-14
申请号：US11360814
申请日：2006-02-24
申请人： Naoki Ohmiya , Satoshi Genda , Noboru Takeda , Koichi Takeyama , Yukio Morishige , Hiroshi Morikazu , Hiroshi Nomura
发明人： Naoki Ohmiya , Satoshi Genda , Noboru Takeda , Koichi Takeyama , Yukio Morishige , Hiroshi Morikazu , Hiroshi Nomura
IPC分类号： G03B27/58
CPC分类号： G03F7/707 , B23K26/40 , B23K37/0408 , B23K2101/40 , B23K2103/50 , B25B11/005 , B28D5/0094 , H01L21/6838
摘要： To prevent heating of a holding table that holds a wafer when using a laser beam to process a wafer, a wafer holding mechanism has a wafer holder having a holding surface that holds a wafer and a suction part formed on an outer peripheral side of the wafer holder, with the wafer held to the holding surface by a suction force transmitted to the holding surface from the suction part through an outer peripheral edge part of the wafer holder. The wafer can be held in place with suction without forming fine holes that penetrate the wafer holder from a front surface thereof to a back surface thereof, and therefore a material of good permeability and dispersibility with respect to the wavelength of the laser light can be selected for the wafer holder.
摘要翻译：为了防止在使用激光束处理晶片时保持晶片的保持台的加热，晶片保持机构具有晶片保持器，该晶片保持器具有保持晶片的保持表面和形成在晶片的外周侧的吸引部分保持器，其中晶片通过来自抽吸部分的透镜通过晶片保持器的外周边缘部分传递到保持表面的吸力保持在保持表面上。可以通过抽吸将晶片保持在适当位置，而不会形成从其前表面到其后表面穿透晶片保持器的细孔，因此可以选择相对于激光的波长具有良好的渗透性和分散性的材料用于晶片座。

9. 发明授权

US4847150A Foams of polyolefin/polystyrene resin mixture 失效
标题翻译：聚烯烃/聚苯乙烯树脂混合物泡沫
公开(公告)号：US4847150A
公开(公告)日：1989-07-11
申请号：US168122
申请日：1988-01-29
申请人： Noboru Takeda
发明人： Noboru Takeda
IPC分类号： C08J9/12 , B29C47/00 , B29K9/00 , B29K23/00 , B29K25/00 , B29K105/04 , C08J9/00 , C08J9/14 , C08L23/02 , C08L25/06 , C08L53/02
CPC分类号： C08J9/0061 , C08L23/02 , C08L23/06 , C08L23/12 , C08J2323/02 , C08L2203/14 , Y10S264/05 , Y10S264/18 , Y10T428/249989
摘要： A foam of a polyolefin/polystyrene resin mixture obtained by mixing a polyolefin resin and a polystyrene resin in the presence of a hydrogenated styrene/butadiene block copolyer, and subjecting the resultant mixed resinous composition to extrusion foaming, wherein;(1) said hydrogenated styrene/butadiene block copolymer comprises, as components before hydrogenation, 10 to 38% by weight of styrene and butadiene with a content of 1,2-bond type butadiene of 20 to 50% by weight based on butadiene, and;(2) said foam comprises a thin surface skin portion showing a value of 0.65 or more of the surface structural index S represented by the following formula:S=t/T.gtoreq.0.65 wherein t and T each represent a total light-transmission evaluated according to the method of ASTM D1003 with respect to a surface skin layer and an inner layer of the foam,is found to have the cushioning properties (or the foam properties) that enables elastic cushioning of a large load.
摘要翻译： PCT No.PCT / JP87 / 00303 Sec。 371日期1988年1月29日第 102（e）日期1988年1月29日PCT提交1987年5月14日PCT公布。出版物WO88 / 08864 日本特许公开1988年11月17日。1.一种聚烯烃/聚苯乙烯树脂混合物的泡沫体，其通过在氢化苯乙烯/丁二烯嵌段共聚物存在下混合聚烯烃树脂和聚苯乙烯树脂，并将所得混合树脂组合物进行挤出发泡，其中 ; （1）所述氢化苯乙烯/丁二烯嵌段共聚物作为氢化前的成分，含有10〜38重量％的丁二烯含量为20〜50重量％的苯乙烯和丁二烯，丁二烯为20〜50重量％， ; （2）所述泡沫体包含表面结构指数S的值为0.65以上的薄表面部分，该表面结构指数S由下式表示：S = t / T> / = 0.65其中t和T各自表示总的光传输发现根据ASTM D1003的方法相对于表面表层和泡沫的内层进行评估具有使得能够进行大负载的弹性缓冲的缓冲性（或泡沫性）。

10. 发明授权

US07582541B2 Wafer laser processing method 有权
标题翻译：晶圆激光加工方法
公开(公告)号：US07582541B2
公开(公告)日：2009-09-01
申请号：US11797627
申请日：2007-05-04
申请人： Noboru Takeda , Yukio Morishige
发明人： Noboru Takeda , Yukio Morishige
IPC分类号： H01L21/00
CPC分类号： H01L21/67282 , B23K26/0736 , B23K26/16 , B23K26/364 , B23K26/40 , B23K2103/50 , H01L21/67092 , H01L21/78
摘要： A wafer laser processing method for forming a groove along streets in a wafer by moving the wafer at a predetermined feed rate while a laser beam whose focal spot is elliptic is applied along the streets formed on the wafer, comprising: a groove forming step for forming a groove along the streets by applying a first laser beam whose elliptic focal spot has a ratio of the long axis to the short axis of 30 to 60:1, along the streets formed on the wafer; and a debris removing step for removing debris accumulated in the groove by applying a second laser beam whose elliptic focal spot has a ratio of the long axis to the short axis of 1 to 20:1, along the groove formed by the groove forming step; the groove forming step and the debris removing step being repeated alternately.
摘要翻译：一种晶片激光加工方法，其特征在于，在沿晶片上形成的街道施加聚焦点为椭圆形的激光束的情况下，以规定的供给速度移动所述晶片，在晶圆上形成沟槽，其特征在于，包括：通过沿着形成在晶片上的街道施加椭圆形焦斑具有长轴与短轴的比例为30至60:1的第一激光束，沿着街道的凹槽; 以及碎屑去除步骤，通过沿着由槽形成步骤形成的槽施加椭圆焦斑具有长轴与短轴的比率为1至20:1的第二激光束，去除积存在凹槽中的碎屑; 交替地重复槽形成步骤和碎屑去除步骤。

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