会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 8. 发明授权
    • Process for fabricating a common source region in memory devices
    • 用于在存储器件中制造公共源极区的工艺
    • US06211020B1
    • 2001-04-03
    • US09177294
    • 1998-10-22
    • Nicholas Harris TripsasMark T. Ramsbey
    • Nicholas Harris TripsasMark T. Ramsbey
    • H01L21336
    • H01L27/11521H01L27/115
    • A method for manufacturing a non-volatile memory device includes forming a memory device on the semiconductor substrate by forming isolation regions in said substrate, forming gate stacks on the substrate between respective ones of said isolation regions, with each stack having at least an active region adjacent thereto, and forming common source regions for the plurality of gate stacks through a plasma implant of an impurity. A memory device having a plurality of memory transistors is also provided. The device generally comprises a semiconductor substrate having a generally planar surface. Field oxide regions are formed in the semiconductor substrate to a depth below the substrate surface. The common bus region is provided which is exposed to the substrate, the common bus region including at least a first recessed portion of the substrate wherein areas of the field oxide regions have been removed so that said recessed portion has a depth below the surface of the substrate. An impurity region forming the common bus is formed in the common bus region, with the impurity region having a junction depth which is generally uniform within the recessed portion.
    • 一种用于制造非易失性存储器件的方法包括通过在所述衬底中形成隔离区域在所述半导体衬底上形成存储器件,在所述隔离区域的相应区域之间的所述衬底上形成栅叠层,每个叠层至少具有有源区 并且通过杂质的等离子体注入形成用于多个栅极叠层的公共源区。还提供了具有多个存储晶体管的存储器件。 该器件通常包括具有大致平坦表面的半导体衬底。 半导体衬底中的场氧化物区域形成在衬底表面下方的深度。 提供公共总线区域,其暴露于衬底,公共总线区域至少包括衬底的第一凹陷部分,其中场氧化物区域的区域已被去除,使得所述凹陷部分的深度低于 基质。 形成公共总线的杂质区域形成在公共总线区域中,杂质区域具有在凹部内大致均匀的结深度。
    • 9. 发明授权
    • Method for monitoring rapid thermal process integrity
    • 监测快速热过程完整性的方法
    • US6015717A
    • 2000-01-18
    • US42331
    • 1998-03-13
    • Nicholas Harris Tripsas
    • Nicholas Harris Tripsas
    • H01L21/66H01L23/544G01R31/26
    • H01L22/20H01L22/34
    • A method for determining the integrity of a rapid thermal process device which is sensitive to atmospheric leaks. The method includes the steps of providing a wafer having a susceptibility to oxidation-enhanced diffusion into the device. The wafer is then annealed in an inert ambient, and the oxide thickness and sheet resistance of the wafer are then measured. In a further aspect of the invention, a control wafer is simultaneously processed or sequentially processed in the chamber. The control wafer is not sensitive to temperature variation. Following the theories of statistical process control, the analysis of the oxide thickness, sheet resistance and temperature control wafer will allow a determination of whether the ambient leaks have occurred in the system.
    • 一种确定对大气泄漏敏感的快速热处理装置的完整性的方法。 该方法包括提供具有对氧化增强扩散的敏感性的晶片到设备中的步骤。 然后将晶片在惰性环境中退火,然后测量晶片的氧化物厚度和薄层电阻。 在本发明的另一方面,控制晶片在腔室中被同时处理或顺序处理。 控制晶片对温度变化不敏感。 根据统计过程控制的理论,氧化物厚度,薄层电阻和温度控制晶片的分析将允许确定系统中是否发生了环境泄漏。