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1. 发明授权

US07371281B2 Silicon carbide single crystal and method and apparatus for producing the same 有权
标题翻译：碳化硅单晶及其制造方法和装置
公开(公告)号：US07371281B2
公开(公告)日：2008-05-13
申请号：US10528556
申请日：2003-09-18
申请人： Yasuyuki Sakaguchi , Atsushi Takagi , Naoki Oyanagi
发明人： Yasuyuki Sakaguchi , Atsushi Takagi , Naoki Oyanagi
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B23/002 , C30B23/00 , C30B29/36
摘要： A growth crucible (2) for depositing on a seed crystal substrate (5) a silicon carbide single crystal (6) using a sublimate gas of a silicon carbide raw material (11) is disposed inside of an outer crucible (1). During the course of silicon carbide single crystal, a silicon raw material (22) is continuously fed from outside into a space between the growth crucible and the outer crucible for the purpose of vaporizing the silicon raw material. An atmosphere gas surrounding the growth crucible is constituted of a silicon gas. The pressure of the atmosphere silicon gas is controlled to suppress a variation in the composition of the sublimate gas within the growth crucible to thereby grow a large-sized silicon carbide single crystal with few crystal defects on the seed crystal substrate reliably at a high growth rate.
摘要翻译：使用碳化硅原料（11）的升华气体在晶种基板（5）上沉积碳化硅单晶（6）的生长坩埚（2）设置在外坩埚（1）的内部。在碳化硅单晶的过程中，硅原料（22）从外部连续地进料到生长坩埚和外坩埚之间的空间中，以使硅原料蒸发。围绕生长坩埚的气氛气体由硅气体构成。控制气氛硅气体的压力以抑制生长坩埚内的升华气体的组成的变化，从而以高生长速度可靠地生长晶种上晶体缺陷少的大尺寸碳化硅单晶。

2. 发明申请

US20070000432A1 Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal 有权
标题翻译：生长碳化硅单晶，碳化硅晶种和碳化硅单晶的方法
公开(公告)号：US20070000432A1
公开(公告)日：2007-01-04
申请号：US10560745
申请日：2004-06-15
申请人： Naoki Oyanagi
发明人： Naoki Oyanagi
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025
摘要： A method for producing a single crystal includes supplying a vapor gas from silicon carbide as a raw material to a seed crystal formed of a silicon carbide single crystal to grow the seed crystal. The seed crystal is disposed in a part of crystal growth, with a crystal face of the seed crystal inclined relative to a (0001) plane or (000-1) plane, thereby making crystal growth.
摘要翻译：一种制造单晶的方法包括：将作为原料的碳化硅的蒸汽气体供给到由碳化硅单晶形成的晶种，以生长晶种。种子晶体被配置在晶体生长的一部分中，晶种的晶面相对于（0001）面或（000-1）面倾斜，从而使晶体生长。

3. 发明授权

US07455730B2 Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal 有权
标题翻译：生长碳化硅单晶，碳化硅晶种和碳化硅单晶的方法
公开(公告)号：US07455730B2
公开(公告)日：2008-11-25
申请号：US10560745
申请日：2004-06-15
申请人： Naoki Oyanagi
发明人： Naoki Oyanagi
IPC分类号： C30B25/12
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025
摘要： A method for producing a single crystal includes supplying a vapor gas from silicon carbide as a raw material to a seed crystal formed of a silicon carbide single crystal to grow the seed crystal. The seed crystal is disposed in a part of crystal growth, with a crystal face of the seed crystal inclined relative to a (0001) plane or (000-1) plane, thereby making crystal growth.
摘要翻译：一种制造单晶的方法包括：将作为原料的碳化硅的蒸汽气体供给到由碳化硅单晶形成的晶种，以生长晶种。种子晶体被配置在晶体生长的一部分中，晶种的晶面相对于（0001）面或（000-1）面倾斜，从而使晶体生长。

4. 发明授权

US07993453B2 Method for producing silicon carbide single crystal 有权
标题翻译：碳化硅单晶的制造方法
公开(公告)号：US07993453B2
公开(公告)日：2011-08-09
申请号：US12301383
申请日：2007-05-10
申请人： Naoki Oyanagi , Tomohiro Syounai , Yasuyuki Sakaguchi
发明人： Naoki Oyanagi , Tomohiro Syounai , Yasuyuki Sakaguchi
IPC分类号： C30B19/12 , C30B25/20
CPC分类号： C30B29/36 , C30B19/04 , C30B19/12 , C30B23/025 , C30B25/18 , Y10S117/902 , Y10S117/915
摘要： A method for the production of an SiC single crystal includes the steps of growing a first SiC single crystal in a first direction of growth on a first seed crystal formed of an SiC single crystal, disposing the first SiC single crystal grown on the first seed crystal in a direction parallel or oblique to the first direction of growth and cutting the disposed first SiC single crystal in a direction of a major axis in a cross section perpendicular to the first direction of growth to obtain a second seed crystal, using the second seed crystal to grow thereon in a second direction of growth a second SiC single crystal to a thickness greater than a length of the major axis in the cross section, disposing the second SiC single crystal grown on the second seed crystal in a direction parallel or oblique to the second direction of growth and cutting the disposed second SiC single crystal in a direction of a major axis in a cross section perpendicular to the second direction of growth to obtain a third seed crystal, using the third seed crystal to grow thereon a third SiC single crystal, and cutting the third SiC single crystal grown on the third seed crystal in such a manner as to expose a {0001} crystal face, thereby obtaining an SiC single crystal. The method enables the crystal to be enlarged efficiently without impairing crystallinity.
摘要翻译：制造SiC单晶的方法包括以下步骤：在由SiC单晶形成的第一晶种上沿第一生长方向生长第一SiC单晶，将第一SiC单晶生长在第一晶种上在与所述第一生长方向平行或倾斜的方向上，在垂直于所述第一生长方向的截面中沿着长轴方向切割所述第一SiC单晶，以使用所述第二晶种在第二SiC单晶的第二生长方向上生长至大于截面中的长轴长度的厚度，将生长在第二晶种上的第二SiC单晶沿平行或倾斜的方向第二生长方向和在垂直于第二生长方向的横截面中在长轴方向上切割设置的第二SiC单晶，以获得第三晶种，使用第三晶种在其上生长第三SiC单晶，并且以使得曝光{0001}晶面的方式切割在第三晶种上生长的第三SiC单晶，从而获得SiC 单晶。该方法能够在不损害结晶性的前提下有效地扩大晶体。

5. 发明申请

US20110111171A1 SEED CRYSTAL FOR SILICON CARBIDE SINGLE CRYSTAL GROWTH, METHOD FOR PRODUCING THE SEED CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL, AND METHOD FOR PRODUCING THE SINGLE CRYSTAL 审中-公开
标题翻译：用于硅碳化物单晶生长的种子晶体，用于生产种子晶体，碳化硅单晶的方法和用于生产单晶的方法
公开(公告)号：US20110111171A1
公开(公告)日：2011-05-12
申请号：US13000975
申请日：2009-06-12
申请人： Naoki Oyanagi , Hisao Kogoi
发明人： Naoki Oyanagi , Hisao Kogoi
IPC分类号： C30B29/36 , B32B9/04 , B32B5/00 , C23C16/26 , C23C16/513 , C23C16/48 , C23C14/34 , C23C14/28 , C30B23/02
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , Y10T428/24273 , Y10T428/263 , Y10T428/265
摘要： A seed crystal for silicon carbide single crystal growth (13) which is attached to the lid of a graphite crucible charged with a raw material silicon carbide powder. The seed crystal includes a seed crystal (4) formed of silicon carbide having one surface defined as a growth surface (4a) for growing a silicon carbide single crystal by a sublimation method, and a carbon film (12) formed on the surface (4b) opposite to the growth surface of the seed crystal (4). Further, the film density of the carbon film (12) is 1.2 g/cm3 to 3.3 g/cm3.
摘要翻译：一种用于碳化硅单晶生长的晶种（13），其连接到装有原料碳化硅粉末的石墨坩埚的盖子上。晶种包括由碳化硅形成的晶种（4），该碳化硅的一个表面被定义为通过升华法生长碳化硅单晶的生长表面（4a），和形成在表面（4b）上的碳膜）与晶种（4）的生长表面相对。此外，碳膜（12）的膜密度为1.2g / cm 3至3.3g / cm 3。

6. 发明申请

US20100092366A1 WATER-BASED POLISHING SLURRY FOR POLISHING SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, AND POLISHING METHOD FOR THE SAME 审中-公开
标题翻译：用于抛光硅碳化硅单晶基板的水基抛光浆料及其抛光方法
公开(公告)号：US20100092366A1
公开(公告)日：2010-04-15
申请号：US12520694
申请日：2007-12-17
申请人： Hisao Kogoi , Naoki Oyanagi , Yasuyuki Sakaguchi
发明人： Hisao Kogoi , Naoki Oyanagi , Yasuyuki Sakaguchi
IPC分类号： C09K13/04 , B24B1/00 , C01B31/36 , C09K3/14
CPC分类号： C09K3/1463 , B24B37/0056 , B24B37/044 , C09K3/1409 , C30B29/36 , C30B33/00 , H01L21/02024 , H01L21/0475 , H01L29/1608
摘要： A water-based polishing slurry for polishing a silicon carbide single crystal, wherein the slurry comprises abrasive particles having a mean particle size of 1 to 400 nm and an inorganic acid, and the slurry has a pH of less than 2 at 20° C.
摘要翻译：一种用于抛光碳化硅单晶的水性抛光浆料，其中所述浆料包含平均粒度为1至400nm的磨料颗粒和无机酸，并且所述浆料在20℃下的pH值小于2。

7. 发明申请

US20060144324A1 Silicon carbide single crystal and method and apparatus for producing the same 有权
标题翻译：碳化硅单晶及其制造方法和装置
公开(公告)号：US20060144324A1
公开(公告)日：2006-07-06
申请号：US10528556
申请日：2003-09-18
申请人： Yasuyuki Sakaguchi , Atsushi Takagi , Naoki Oyanagi
发明人： Yasuyuki Sakaguchi , Atsushi Takagi , Naoki Oyanagi
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B23/002 , C30B23/00 , C30B29/36
摘要： A growth crucible (2) for depositing on a seed crystal substrate (5) a silicon carbide single crystal (6) using a sublimate gas of a silicon carbide raw material (11) is disposed inside of an outer crucible (1). During the course of silicon carbide single crystal, a silicon raw material (22) is continuously fed from outside into a space between the growth crucible and the outer crucible for the purpose of vaporizing the silicon raw material. An atmosphere gas surrounding the growth crucible is constituted of a silicon gas. The pressure of the atmosphere silicon gas is controlled to suppress a variation in the composition of the sublimate gas within the growth crucible to thereby grow a large-sized silicon carbide single crystal with few crystal defects on the seed crystal substrate reliably at a high growth rate.
摘要翻译：使用碳化硅原料（11）的升华气体在晶种基板（5）上沉积碳化硅单晶（6）的生长坩埚（2）设置在外坩埚（1）的内部。在碳化硅单晶的过程中，硅原料（22）从外部连续地进料到生长坩埚和外坩埚之间的空间中，以使硅原料蒸发。围绕生长坩埚的气氛气体由硅气体构成。控制气氛硅气体的压力以抑制生长坩埚内的升华气体的组成的变化，从而以高生长速度可靠地生长晶种上晶体缺陷少的大尺寸碳化硅单晶。

8. 发明授权

US06699105B1 Method and apparatus for cutting and grinding single crystal SiC 失效
标题翻译：单晶SiC切割研磨的方法和装置
公开(公告)号：US06699105B1
公开(公告)日：2004-03-02
申请号：US09530658
申请日：2000-07-05
申请人： Hitoshi Ohmori , Yutaka Yamagata , Nobuhide Itoh , Nobuyuki Nagato , Kotaro Yano , Naoki Oyanagi
发明人： Hitoshi Ohmori , Yutaka Yamagata , Nobuhide Itoh , Nobuyuki Nagato , Kotaro Yano , Naoki Oyanagi
IPC分类号： B24B100
CPC分类号： B28D5/023 , B24B7/228 , B24B27/0658 , B24B53/001 , B24D5/12 , B28D5/022
摘要： The present invention comprises a metal bond grind stone having a flat plate portion 10a and a tapered portion 10b; an electrode 13 opposed to the metal bond grind stone with a gap therebetween; voltage applying means 12 for applying a direct-current pulse voltage between the metal bond grind stone and the electrode; conductive liquid supplying means 14 for supplying a conductive liquid 15 between the metal bond grind stone and the electrode; and grind stone moving means 16 for moving the metal bond grind stone in a direction orthogonal to the shaft center thereof, and an ingot 1 of a single crystal SiC is thereby cut at the tapered portion 10b of the metal bond grind stone and the cut surface is then specular-worked at the flat plate portion 10a.
摘要翻译：本发明包括具有平板部分10a和锥形部分10b的金属结合磨石; 与金属结合研磨石相对的电极13，其间具有间隙; 电压施加装置12，用于在金属结合研磨石与电极之间施加直流脉冲电压; 用于在金属结合研磨石和电极之间供应导电液体15的导电液体供给装置14; 并且研磨用于使金属粘结研磨石沿与其轴心正交的方向移动的石块移动装置16，从而在金属结合研磨石的锥形部分10b上切割单晶SiC锭，切割面然后在平板部分10a进行镜面加工。

9. 发明授权

US06336971B1 Method and apparatus for producing silicon carbide single crystal 有权
标题翻译：生产碳化硅单晶的方法和装置
公开(公告)号：US06336971B1
公开(公告)日：2002-01-08
申请号：US09508427
申请日：2000-03-13
申请人： Nobuyuki Nagato , Kunio Komaki , Isamu Yamamoto , Naoki Oyanagi , Shigehiro Nishino
发明人： Nobuyuki Nagato , Kunio Komaki , Isamu Yamamoto , Naoki Oyanagi , Shigehiro Nishino
IPC分类号： C30B2936
CPC分类号： C30B23/00 , C30B29/36
摘要： A silicon carbide single crystal is produced by allowing a vapor evaporated from a silicon raw material to pass through a heated carbon member and then reach a seed crystal substrate on which a silicon carbide single crystal grows. For this production, an apparatus is used, which has a reaction tube, a heating device and a graphite crucible, wherein the lower part of the crucible constitutes a silicon raw material-charging part; a seed crystal substrate is situated at the top of the crucible; and a carbon member, through which the vapor evaporated from a silicon raw material in capable of passing, is disposed intermediately between the silicon raw material-charging part and the seed crystal. As the carbon member, a porous carbon structure, a carbon plate having a plurality of through holes and a carbon particle-packed layer can be mentioned.
摘要翻译：通过使从硅原料蒸发的蒸汽通过加热的碳构件，然后到达碳化硅单晶生长的晶种基板，制造碳化硅单晶。对于该生产，使用具有反应管，加热装置和石墨坩埚的装置，其中坩埚的下部构成硅原料充电部; 晶种基底位于坩埚顶部; 在硅原料充电部和晶种之间设置碳原子，通过该碳构件从硅原料蒸发的能够通过的蒸气。作为碳构件，可以提及多孔碳结构，具有多个通孔的碳板和碳粒子填充层。

10. 发明申请

US20090184327A1 METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL 有权
标题翻译：生产碳化硅单晶的方法
公开(公告)号：US20090184327A1
公开(公告)日：2009-07-23
申请号：US12301383
申请日：2007-05-10
申请人： Naoki Oyanagi , Tomohiro Syounai , Yasuyuki Sakaguchi
发明人： Naoki Oyanagi , Tomohiro Syounai , Yasuyuki Sakaguchi
IPC分类号： H01L29/24 , C01B31/36 , H01L21/20
CPC分类号： C30B29/36 , C30B19/04 , C30B19/12 , C30B23/025 , C30B25/18 , Y10S117/902 , Y10S117/915
摘要： A method for the production of an SiC single crystal includes the steps of growing a first SiC single crystal in a first direction of growth on a first seed crystal formed of an SiC single crystal, disposing the first SiC single crystal grown on the first seed crystal in a direction parallel or oblique to the first direction of growth and cutting the disposed first SiC single crystal in a direction of a major axis in a cross section perpendicular to the first direction of growth to obtain a second seed crystal, using the second seed crystal to grow thereon in a second direction of growth a second SiC single crystal to a thickness greater than a length of the major axis in the cross section, disposing the second SiC single crystal grown on the second seed crystal in a direction parallel or oblique to the second direction of growth and cutting the disposed second SiC single crystal in a direction of a major axis in a cross section perpendicular to the second direction of growth to obtain a third seed crystal, using the third seed crystal to grow thereon a third SiC single crystal, and cutting the third SiC single crystal grown on the third seed crystal in such a manner as to expose a {0001} crystal face, thereby obtaining an SiC single crystal. The method enables the crystal to be enlarged efficiently without impairing crystallinity.
摘要翻译：制造SiC单晶的方法包括以下步骤：在由SiC单晶形成的第一晶种上沿第一生长方向生长第一SiC单晶，将第一SiC单晶生长在第一晶种上在与所述第一生长方向平行或倾斜的方向上，在垂直于所述第一生长方向的截面中沿着长轴方向切割所述第一SiC单晶，以使用所述第二晶种在第二SiC单晶的第二生长方向上生长至大于截面中的长轴长度的厚度，将生长在第二晶种上的第二SiC单晶沿平行或倾斜的方向第二生长方向和在垂直于第二生长方向的横截面中在长轴方向上切割设置的第二SiC单晶，以获得第三晶种，使用第三晶种在其上生长第三SiC单晶，并且以使得曝光{0001}晶面的方式切割在第三晶种上生长的第三SiC单晶，从而获得SiC 单晶。该方法能够在不损害结晶性的前提下有效地扩大晶体。

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