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1. 发明申请

US20120147233A1 IMAGING DEVICE AND IMAGING APPARATUS 有权
标题翻译：成像装置和成像装置
公开(公告)号：US20120147233A1
公开(公告)日：2012-06-14
申请号：US13302603
申请日：2011-11-22
申请人： Naofumi Sakai
发明人： Naofumi Sakai
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H01L27/14603 , H04N5/374 , H04N5/3742 , H04N9/09
摘要： An imaging device includes: a pixel array that has a plurality of pixels disposed according to an oblique pixel arrangement; a first conversion means for performing digital conversion for pixel signals output from pixels in an even column of the pixel array; a second conversion means for performing digital conversion for pixel signals output from pixels in an odd column of the pixel array; and an addition means for adding pixel data output from the first conversion means and the second conversion means, wherein each of the first conversion means and the second conversion means includes a counter having a flip-flop, a first latch circuit, and a second latch circuit.
摘要翻译：一种成像装置包括：具有根据倾斜像素布置布置的多个像素的像素阵列; 第一转换装置，用于对像素阵列的偶数列中的像素输出的像素信号进行数字转换; 第二转换装置，用于对像素阵列的奇数列中的像素输出的像素信号执行数字转换; 以及加法装置，用于将从第一转换装置和第二转换装置输出的像素数据相加，其中第一转换装置和第二转换装置中的每一个包括具有触发器，第一锁存电路和第二锁存器的计数器电路。

2. 发明申请

US20120008032A1 SOLID-STATE IMAGING APPARATUS 失效
标题翻译：固态成像装置
公开(公告)号：US20120008032A1
公开(公告)日：2012-01-12
申请号：US13162741
申请日：2011-06-17
申请人： Junichi Kurihara , Naofumi Sakai
发明人： Junichi Kurihara , Naofumi Sakai
IPC分类号： H04N5/335
CPC分类号： H04N5/3598 , H04N5/3745 , H04N5/378
摘要： A solid-state imaging apparatus includes a comparison section comparing a pixel signal from a pixel with a ramp signal and outputting a comparison signal. A measurement section starts counting in synchronism with the ramp signal and continues the counting until a signal supplied thereto reverses to measure comparison time. A comparator output controlling section interposed between the output of the comparison section and the input of the measurement section stops, if a pixel signal value exceeds a predetermined value determined based on a tanning phenomenon when the counting is started, the counting when the comparison signal is supplied to the measurement section to reverse the comparison signal, but supplies, if the pixel signal value does not exceed the predetermined value, a signal which is not reversed within a measurement period to the measurement section to continue the counting during the measurement period.
摘要翻译：固态成像装置包括比较部分，其将来自像素的像素信号与斜坡信号进行比较并输出比较信号。测量部分开始与斜坡信号同步计数，并继续计数，直到提供的信号反转，以测量比较时间。如果在计数开始时像素信号值超过基于鞣制现象确定的预定值，则比较器输出控制部分插在比较部分的输出和测量部分的输入之间停止，当比较信号为提供给测量部分以反转比较信号，但是如果像素信号值不超过预定值，则在测量周期内提供在测量周期内未被反转的信号，以在测量期间继续计数。

3. 发明授权

US08063960B2 Solid-state imaging device and apparatus with an increased speed of analog to digital conversion 失效
标题翻译：具有模数转换速度提高的固态成像装置和装置
公开(公告)号：US08063960B2
公开(公告)日：2011-11-22
申请号：US12029035
申请日：2008-02-11
申请人： Naofumi Sakai , Tomonori Mori
发明人： Naofumi Sakai , Tomonori Mori
IPC分类号： H04N3/14 , H01L27/00
CPC分类号： H04N5/335 , H04N5/378
摘要： A solid-state imaging device includes a reference-signal generating unit that generates plural kinds of reference signals for converting an analog pixel signal into digital data, a reference-signal selecting unit that selects any one of the plural kinds of reference signals, a comparing unit that compares the pixel signal and the selected reference signal, and a count unit that performs count processing in parallel with comparison processing in the comparing unit and stores a count value at a point when the comparison processing is completed. The count unit decides digital data of the pixel signal in a 1 LSB step by storing a count value at a point when the comparison processing is completed for any one of the plural kinds of reference signals and correcting the stored count value on the basis of results of the comparison processing for respective remaining reference signals of the plural kinds of reference signals.
摘要翻译：一种固态成像装置，包括：参考信号生成单元，其生成用于将模拟像素信号转换为数字数据的多种参考信号;参考信号选择单元，其选择多种参考信号中的任一种，比较比较像素信号和所选择的参考信号的单元，以及与比较单元中的比较处理并行执行计数处理的计数单元，并且在比较处理完成时存储计数值。计数单元通过在多个参考信号中的任一个完成比较处理的点处存储计数值，并且基于结果校正存储的计数值，以1 LSB步长来决定像素信号的数字数据对于多种参考信号的各个剩余的参考信号进行比较处理。

4. 发明申请

US20080192127A1 SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS 失效
标题翻译：固态成像装置和成像装置
公开(公告)号：US20080192127A1
公开(公告)日：2008-08-14
申请号：US12029035
申请日：2008-02-11
申请人： Naofumi Sakai , Tomonori Mori
发明人： Naofumi Sakai , Tomonori Mori
IPC分类号： H04N5/228
CPC分类号： H04N5/335 , H04N5/378
摘要： A solid-state imaging device includes a reference-signal generating unit that generates plural kinds of reference signals for converting an analog pixel signal into digital data, a reference-signal selecting unit that selects any one of the plural kinds of reference signals, a comparing unit that compares the pixel signal and the selected reference signal, and a count unit that performs count processing in parallel with comparison processing in the comparing unit and stores a count value at a point when the comparison processing is completed. The count unit decides digital data of the pixel signal in a 1 LSB step by storing a count value at a point when the comparison processing is completed for any one of the plural kinds of reference signals and correcting the stored count value on the basis of results of the comparison processing for respective remaining reference signals of the plural kinds of reference signals.
摘要翻译：一种固态成像装置，包括：参考信号生成单元，其生成用于将模拟像素信号转换为数字数据的多种参考信号;参考信号选择单元，其选择多种参考信号中的任一种，比较比较像素信号和所选择的参考信号的单元，以及与比较单元中的比较处理并行执行计数处理的计数单元，并且在比较处理完成时存储计数值。计数单元通过在多个参考信号中的任一个完成比较处理的点处存储计数值，并且基于结果校正存储的计数值，以1 LSB步长来决定像素信号的数字数据对于多种参考信号的各个剩余的参考信号进行比较处理。

5. 发明授权

US06795351B2 Memory having storage means 有权
标题翻译：具有存储装置的存储器
公开(公告)号：US06795351B2
公开(公告)日：2004-09-21
申请号：US10390649
申请日：2003-03-19
申请人： Naofumi Sakai
发明人： Naofumi Sakai
IPC分类号： G11C1604
CPC分类号： G11C16/3418 , G11C11/22
摘要： A memory capable of inhibiting a non-selected cell from disturbance is provided. This memory comprises a bit line, a word line arranged to intersect with the bit line and first storage means connected between the bit line and the word line, for applying voltages of opposite directions to the first storage means of a non-selected memory cell by the same number of times or substantially applying no voltages throughout a read operation and a rewrite operation while varying a rewriting method with a case of reading first data by the read operation and with a case of reading second data by the read operation.
摘要翻译：提供了能够抑制未选择的电池受到干扰的存储器。该存储器包括位线，布置成与位线相交的字线和连接在位线和字线之间的第一存储装置，用于将相反方向的电压施加到未选择的存储器单元的第一存储装置，通过在通过读取操作读取第一数据的情况下改变重写方法以及通过读取操作读取第二数据的情况下，在整个读取操作和重写操作中基本不施加电压或基本上不施加电压。

6. 发明授权

US08421893B2 Solid-state imaging apparatus 失效
标题翻译：固态成像装置
公开(公告)号：US08421893B2
公开(公告)日：2013-04-16
申请号：US13162741
申请日：2011-06-17
申请人： Junichi Kurihara , Naofumi Sakai
发明人： Junichi Kurihara , Naofumi Sakai
IPC分类号： H04N5/335 , H04N9/64 , H04N5/217
CPC分类号： H04N5/3598 , H04N5/3745 , H04N5/378
摘要： A solid-state imaging apparatus includes a comparison section comparing a pixel signal from a pixel with a ramp signal and outputting a comparison signal. A measurement section starts counting in synchronism with the ramp signal and continues the counting until a signal supplied thereto reverses to measure comparison time. A comparator output controlling section interposed between the output of the comparison section and the input of the measurement section stops, if a pixel signal value exceeds a predetermined value determined based on a tanning phenomenon when the counting is started, the counting when the comparison signal is supplied to the measurement section to reverse the comparison signal, but supplies, if the pixel signal value does not exceed the predetermined value, a signal which is not reversed within a measurement period to the measurement section to continue the counting during the measurement period.
摘要翻译：固态成像装置包括比较部分，其将来自像素的像素信号与斜坡信号进行比较并输出比较信号。测量部分开始与斜坡信号同步计数，并继续计数，直到提供的信号反转，以测量比较时间。如果在计数开始时像素信号值超过基于鞣制现象确定的预定值，则比较器输出控制部分插在比较部分的输出和测量部分的输入之间停止，当比较信号为提供给测量部分以反转比较信号，但是如果像素信号值不超过预定值，则在测量周期内提供在测量周期内未被反转的信号，以在测量期间继续计数。

7. 发明授权

US07411841B2 Memory having storage means 有权
标题翻译：具有存储装置的存储器
公开(公告)号：US07411841B2
公开(公告)日：2008-08-12
申请号：US10874168
申请日：2004-06-24
申请人： Naofumi Sakai
发明人： Naofumi Sakai
IPC分类号： G11C16/04
CPC分类号： G11C16/3418 , G11C11/22
摘要： A memory capable of inhibiting a non-selected cell from disturbance is provided. This memory comprises a bit line, a word line arranged to intersect with the bit line and first storage means connected between the bit line and the word line, for applying voltages of opposite directions to the first storage means of a non-selected memory cell by the same number of times or substantially applying no voltages throughout a read operation and a rewrite operation while varying a rewriting method with a case of reading first data by the read operation and with a case of reading second data by the read operation.
摘要翻译：提供了能够抑制未选择的电池受到干扰的存储器。该存储器包括位线，布置成与位线相交的字线和连接在位线和字线之间的第一存储装置，用于将相反方向的电压施加到未选择的存储器单元的第一存储装置，通过在通过读取操作读取第一数据的情况下改变重写方法以及通过读取操作读取第二数据的情况下，在整个读取操作和重写操作中基本不施加电压或基本上不施加电压。

8. 发明申请

US20070237016A1 Memory 有权
标题翻译：记忆
公开(公告)号：US20070237016A1
公开(公告)日：2007-10-11
申请号：US11630851
申请日：2005-06-16
申请人： Hideaki Miyamoto , Naofumi Sakai , Kouichi Yamada , Shigeharu Matsushita
发明人： Hideaki Miyamoto , Naofumi Sakai , Kouichi Yamada , Shigeharu Matsushita
IPC分类号： G11C7/00
CPC分类号： G11C11/22
摘要： A memory wherein any “disturb effect” can be suppressed in which data in unselected memory cells are lost. This memory has a memory cell array(1) including bit lines, word lines, which are disposed to intersect the bit lines, and memory cells(12) each connected between bit and word lines. In this memory, an access operation, which includes at least one of read, rewrite and write operations, is made to a selected memory cell(12). During this access operation, it is performed to apply to the memory cell(12) a first voltage pulse, which provides an electrical field in a first direction so as to invert a stored data, and a second voltage pulse, which provides as electrical field in the opposite direction to the first one so as not to invert the stored data. In addition, a recovery operation for recovering a residual polarization amount is made to the memory cell(12).
摘要翻译：可以抑制其中未选择的存储单元中的数据丢失的任何“干扰效应”的存储器。该存储器具有存储单元阵列（1），该存储单元阵列（1）包括位线，设置成与位线相交的字线以及每个连接在位线和字线之间的存储单元（12）。在该存储器中，对选择的存储器单元（12）进行包括读取，重写和写入操作中的至少一个的访问操作。在该访问操作期间，执行向存储器单元（12）施加第一电压脉冲，该第一电压脉冲在第一方向上提供电场以反转存储的数据，以及第二电压脉冲，其提供为电场与第一个方向相反的方向，以便不反转存储的数据。此外，对存储单元（12）进行用于恢复残留极化量的恢复操作。

9. 发明授权

US07251153B2 Memory 有权
标题翻译：记忆
公开(公告)号：US07251153B2
公开(公告)日：2007-07-31
申请号：US11024688
申请日：2004-12-30
申请人： Naofumi Sakai
发明人： Naofumi Sakai
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A memory capable of suppressing disturbance causing disappearance of data from a nonselected memory cell is provided. This memory applies a second voltage of polarity reverse to that of a first voltage applied to a nonselected memory cell in a read operation to at least the nonselected memory cell in addition to the read operation collectively performed on all memory cells connected to a selected word line.
摘要翻译：提供了能够抑制导致来自非选择存储单元的数据消失的干扰的存储器。除了对连接到所选择的字线的所有存储器单元上共同执行的读取操作之外，该存储器将至少非选择存储器单元的读取操作中施加到非选择存储单元的第一电压的极性的第二电压与第一电压相反。

10. 发明授权

US07110279B2 Memory 有权
标题翻译：记忆
公开(公告)号：US07110279B2
公开(公告)日：2006-09-19
申请号：US10935554
申请日：2004-09-08
申请人： Hideaki Miyamoto , Yoshiyuki Ishizuka , Naofumi Sakai
发明人： Hideaki Miyamoto , Yoshiyuki Ishizuka , Naofumi Sakai
IPC分类号： G11C11/22 , G11C11/24
CPC分类号： G11C11/22
摘要： A memory capable of suppressing disturbance is provided. This memory activates each of a selected word line and a bit line corresponding to unrewritten storage means while keeping potential difference therebetween at a level not more than a prescribed value and differentiates the length of a period for applying a voltage for rewriting to each of the selected word line and a bit line corresponding to rewritten storage means from the length of a transition period of the potential of at least either the word line or the bit line corresponding to the unrewritten storage means when performing a rewrite operation on partial selected storage means or performing no rewrite operation on all selected storage means.
摘要翻译：提供了能够抑制干扰的存储器。该存储器激活对应于未启动存储装置的选定字线和位线中的每一个，同时保持它们之间的电位差不超过规定值，并且将用于重写的电压的周期长度区分为所选择的每一个字线和对应于重写存储装置的位线，当对部分选择的存储装置执行重写操作时，从对应于未刷新存储装置的字线或位线中的至少一个的电位的转变周期的长度的长度，对所有选定的存储装置不进行重写操作。

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