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    • 4. 发明申请
    • A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND
    • 在包含特定有机化合物的CMP组合物存在下,制备包含元素锗和/或Si1-XGeX材料的化学机械抛光的半导体器件的制造方法
    • WO2013018015A2
    • 2013-02-07
    • PCT/IB2012/053877
    • 2012-07-30
    • BASF SENOLLER, Bastian MartenDRESCHER, BettinaGILLOT, ChristopheLI, YuzhuoBASF (CHINA) COMPANY LIMITED
    • NOLLER, Bastian MartenDRESCHER, BettinaGILLOT, ChristopheLI, Yuzhuo
    • H01L21/30625C09G1/02C09K3/1463C23F3/00H01L21/02024H01L21/31053H01L21/3212
    • A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si 1-x Ge x material with 0.1 ≤ x 11 R 12 R 13 R 14 ] + , wherein {k} is 1, 2 or 3, (Z) is a hydroxyl (-OH), alkoxy (-OR 1 ), heterocyclic alkoxy (-OR 1 as part of a heterocyclic structure), carboxylic acid (-COOH), carboxylate (-COOR 2 ), amino (-NR 3 R 4 ), heterocyclic amino (-NR 3 R 4 as part of a heterocyclic structure), imino (=N-R 5 or -N=R 6 ), heterocyclic imino (=N-R 5 or -N=R 6 as part of a heterocyclic structure), phosphonate (-P(=0)(OR 7 )(OR 8 ) ), phosphate (-0-P(=0)(OR 9 )(OR 10 ) ), phosphonic acid (-P(=0)(OH) 2 ), phosphoric acid (-0-P(=0)(OH) 2 ) moiety, or their protonated or deprotonated forms, R 1 , R 2 , R 7 , R 9 is - independently from each other - alkyl, aryl, alkylaryl, or arylalkyl, R 3 , R 4 , R 5 , R 8 , R 10 is - independently from each other - H, alkyl, aryl, alkylaryl, or arylalkyl, R 6 is alkylene, or arylalkylene, R 11 , R 12 , R 13 is - independently from each other - H, alkyl, aryl, alkylaryl, or arylalkyl, and R 11 , R 12 , R 13 does not comprise any moiety (Z), R 14 is alkyl, aryl, alkylaryl, or arylalkyl, and R 14 does not comprise any moiety (Z), and (D) an aqueous medium.
    • 在化学机械抛光(CMP)组合物的存在下,包括化学机械抛光元素锗和/或Si1-xGex材料,其中0.1 = x <1的半导体器件的制造方法包括:(A)无机颗粒,有机物 颗粒或其混合物或复合物,(B)至少一种类型的氧化剂,(C)至少一种类型的有机化合物,其包含至少{k}部分(Z),但不包括阴离子的盐 无机且仅有机阳离子为[NR11R12R13R14] +,其中{k}为1,2或3,(Z)为羟基(-OH),烷氧基(-OR1),杂环烷氧基(-OR1为杂环的一部分 结构),羧酸(-COOH),羧酸酯(-COOR 2),氨基(-NR 3 R 4),杂环氨基(作为杂环结构的一部分的-NR 3 R 4),亚氨基(= N-R 5或-N = (-O-R(OR = O)(OR 8)(OR 8)),磷酸(-O-P(= O) ),膦酸(-P(= )(OH)2),磷酸(-O-P(= O)(OH)2)部分或其质子化或去质子化形式,R 1,R 2,R 7,R 9彼此独立地为烷基,芳基, 烷基芳基或芳基烷基,R 3,R 4,R 5,R 8,R 10彼此独立地为H,烷基,芳基,烷基芳基或芳烷基,R 6为亚烷基或芳基亚烷基,R 11,R 12,R 13为彼此独立的 - 烷基,芳基,烷基芳基或芳烷基,并且R 11,R 12,R 13不包含任何部分(Z),R 14是烷基,芳基,烷基芳基或芳基烷基,并且R 14不包含任何部分(Z),和 (D)水性介质。