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    • 1. 发明申请
    • PROCESS FOR PRODUCING SPUTTERING TARGET
    • 生产喷射目标的方法
    • WO1996036746A1
    • 1996-11-21
    • PCT/JP1996001312
    • 1996-05-17
    • ASAHI GLASS COMPANY LTD.NAKAGAMA, SusumuHIGETA, MasaoHAYASHI, Atsushi
    • ASAHI GLASS COMPANY LTD.
    • C23C14/34
    • C23C14/3414
    • A process for producing uniform and high-density composite sputtering targets composed of a high-melting substance and a low-melting metal, which comprises molding a mixture of a powder of a high-melting substance having a melting point of 900 DEG C or above with a powder of a low-melting metal having a melting point of 700 DEG C or below at a temperature below the melting point of the metal under heat and pressure. This process if freed from the problem of the conventional production processes comprising melting, hot pressing or atmospheric pressure sintering such that it has been impossible to produce uniform and high-density composite sputtering targets because of the compositional change due to different melting points of the components and the exudation of the low-melting metal as a result of melting thereof.
    • 一种由高熔点物质和低熔点金属组成的均匀高密度复合溅射靶的制造方法,其特征在于,将熔点为900℃以上的高熔点物质的粉末混合成型 在低于金属熔点的温度下,在热和压力下,熔点为700℃以下的低熔点金属粉末。 该方法如果免于常规生产方法的问题,包括熔融,热压或大气压力烧结,使得由于组分的不同熔点导致的组成变化不可能产生均匀和高密度的复合溅射靶 以及由于熔融而使低熔点金属渗出。