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1. 发明授权

US07745094B2 Resist composition and patterning process using the same 有权
标题翻译：抗蚀剂组成和图案化工艺使用相同
公开(公告)号：US07745094B2
公开(公告)日：2010-06-29
申请号：US11702658
申请日：2007-02-06
申请人： Mutsuo Nakashima , Yoshitaka Hamada , Katsuya Takemura , Kazumi Noda
发明人： Mutsuo Nakashima , Yoshitaka Hamada , Katsuya Takemura , Kazumi Noda
IPC分类号： G03F7/00 , G03F7/004 , G03F7/075
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/114
摘要： A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing a fluorinated norbornane group, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.
摘要翻译：提供了包含有机硅树脂，光酸产生剂，含氮有机化合物和溶剂的抗蚀剂组合物。有机硅树脂通过含有氟化降冰片烷基的三种硅烷单体和具有酸不稳定基团保护的羧基的有机基团和含有内酯环的有机基团的混合物的共水解缩合而获得。抗蚀剂组合物具有令人满意的分辨率，并且克服了在氧反应蚀刻期间抗蚀剂膜和有机膜之间的选择性蚀刻比低的问题。

2. 发明授权

US07550247B2 Resist composition and patterning process 失效
标题翻译：抗蚀剂组成和图案化工艺
公开(公告)号：US07550247B2
公开(公告)日：2009-06-23
申请号：US11205980
申请日：2005-08-18
申请人： Mutsuo Nakashima , Yoshitaka Hamada , Katsuya Takemura , Kazumi Noda , Toshihiko Fujii
发明人： Mutsuo Nakashima , Yoshitaka Hamada , Katsuya Takemura , Kazumi Noda , Toshihiko Fujii
IPC分类号： G03C1/73 , G03F7/039 , G03F7/20 , G03F7/36
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/108
摘要： A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing an organic group having a hydroxyl group and having at least 3 fluorine atoms, in total, on a proximate carbon atom, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.
摘要翻译：提供了包含有机硅树脂，光酸产生剂，含氮有机化合物和溶剂的抗蚀剂组合物。有机硅树脂通过在近邻碳原子上含有具有羟基并且具有至少3个氟原子的有机基团的三种硅烷单体的混合物的共水解缩合获得，所述有机基团具有羧基被保护的有机基团酸不稳定基团和含内酯环的有机基团。抗蚀剂组合物具有令人满意的分辨率，并且克服了在氧反应蚀刻期间抗蚀剂膜和有机膜之间的选择性蚀刻比低的问题。

3. 发明授权

US07265234B2 Silsesquioxane compound mixture, method of making, resist composition, and patterning process 有权
标题翻译：倍半硅氧烷复合混合物，制备方法，抗蚀剂组合物和图案化工艺
公开(公告)号：US07265234B2
公开(公告)日：2007-09-04
申请号：US11393911
申请日：2006-03-31
申请人： Yoshitaka Hamada , Mutsuo Nakashima
发明人： Yoshitaka Hamada , Mutsuo Nakashima
IPC分类号： C07F7/00 , G03C1/76
CPC分类号： G03F7/0757 , C08G77/045 , G03F7/0045 , H01L21/3122
摘要： A silsesquioxane compound mixture having a high proportion of silsesquioxane compounds bearing bulky substituent groups on side chain and having a degree of condensation of substantially 100% is prepared by a first stage wherein a silane feed comprising a trifunctional silane bearing a bulky substituent group on side chain represented by formula (1): wherein Y is an aliphatic or aromatic organic group optionally having a functional group, X1, X2 and X3 are H, halogen, alkoxy or aryloxy is hydrolyzed in the presence of an acid or base catalyst, and a second stage wherein dehydrating condensation is carried out in the presence of a strong base catalyst while removing the water resulting from condensation out of the reaction system.
摘要翻译：通过第一阶段制备具有高比例的在侧链上具有大体积取代基且具有基本上100％的缩合度的倍半硅氧烷化合物的倍半硅氧烷化合物混合物，其中包含在侧链上具有大体积取代基的三官能硅烷的硅烷进料由式（1）表示：其中Y是任选具有官能团的脂族或芳族有机基团，X 1，X 2和X 3 O 在酸或碱催化剂的存在下，H，卤素，烷氧基或芳氧基被水解，第二步是在强碱催化剂的存在下进行脱水缩合，同时除去由反应物凝结出来的水系统。

4. 发明授权

US06677101B2 Polymers, resist materials, and pattern formation method 有权
标题翻译：聚合物，抗蚀剂材料和图案形成方法
公开(公告)号：US06677101B2
公开(公告)日：2004-01-13
申请号：US10050478
申请日：2002-01-16
申请人： Tsunehiro Nishi , Koji Hasegawa , Mutsuo Nakashima
发明人： Tsunehiro Nishi , Koji Hasegawa , Mutsuo Nakashima
IPC分类号： G03F7039
CPC分类号： C08G61/06 , G03F7/0395 , G03F7/0397
摘要： An object of the present invention is to provide a polymer which has excellent reactivity, rigidity and adhesion to the substrate, and undergoes a low degree of swelling during development, a resist material which uses this polymer as the base resin and hence exhibits much higher resolving power and etching resistance than conventional resist materials, and a pattern formation method using this resist material. Specifically, the present invention provides a novel polymer containing repeating units represented by the following general formula (1-1) or (1-2) and having a weight-average molecular weight of 1,000 to 500,000, a resist material using the polymer as a base resin, and a pattern formation method using the resist material.
摘要翻译：本发明的目的是提供一种聚合物，其具有优异的反应性，刚性和对基材的粘合性，并且在显影期间发生低度膨胀，使用该聚合物作为基础树脂的抗蚀剂材料，因此表现出更高的分辨率功率和耐蚀刻性，以及使用该抗蚀剂材料的图案形成方法。具体地说，本发明提供一种含有下述通式（1-1）或（1-2）表示的重均单元，重均分子量为1000〜500,000的新型聚合物，使用该聚合物作为基树脂和使用抗蚀剂材料的图案形成方法。

5. 发明授权

US06624335B2 Ether, polymer, resist composition and patterning process 有权
标题翻译：醚，聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US06624335B2
公开(公告)日：2003-09-23
申请号：US10046264
申请日：2002-01-16
申请人： Seiichiro Tachibana , Mutsuo Nakashima , Tsunehiro Nishi
发明人： Seiichiro Tachibana , Mutsuo Nakashima , Tsunehiro Nishi
IPC分类号： C07C4100
CPC分类号： C07C69/14 , C07C43/1781 , C07C69/007 , C07C2602/42 , C07C2603/86 , C08F232/08
摘要： An ether compound of formula (1) is provided wherein R1 is H or C1-6 alkyl, R2 is C1-6 alkyl, R3 is H, C1-15 acyl or C1-15 alkoxycarbonyl which may be substituted with halogen atoms, k is 0 or 1, m is from 0 to 3, and n is from 3 to 6. The ether compound is polymerized to form a polymer having improved reactivity, robustness and substrate adhesion. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV
摘要翻译：提供式（1）的醚化合物，其中R 1是H或C 1-6烷基，R 2是C 1-6烷基，R 3是H，C 1-15酰基或C 1-15烷氧基羰基，其中可以被卤素原子取代，k为0或1，m为0至3，n为3至6.醚化合物聚合形成具有改善的反应性，稳定性和底物粘合性的聚合物。包含作为基础树脂的聚合物的抗蚀剂组合物对高能辐射敏感，具有优异的灵敏度，分辨率和耐蚀刻性，并且适用于电子束或深紫外线的微图案

6. 发明授权

US06605678B2 Polymer, resist composition and patterning process 有权
公开(公告)号：US06605678B2
公开(公告)日：2003-08-12
申请号：US10307996
申请日：2002-12-03
申请人： Tsunehiro Nishi , Mutsuo Nakashima , Tomohiro Kobayashi
发明人： Tsunehiro Nishi , Mutsuo Nakashima , Tomohiro Kobayashi
IPC分类号： C08F12400
CPC分类号： G03F7/0395 , C08F32/08 , G03F7/0045
摘要： A polymer comprising recurring units of formula (1-1) or (1-2) wherein R1, R2, R3 and R4 are H or C1-15 alkyl, R1 and R2, and R3 and R4, taken together, may form a ring; R5 and R6 are H, C1-15 alkyl, acyl or alkylsulfonyl groups or C2-15 alkoxycarbonyl or alkoxyalkyl groups which may have halogen substituents; and k=0 or 1, and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.

7. 发明授权

US06596463B2 Ester compounds, polymers, resist compositions and patterning process 有权
标题翻译：酯化合物，聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US06596463B2
公开(公告)日：2003-07-22
申请号：US09837219
申请日：2001-04-19
申请人： Koji Hasegawa , Tsunehiro Nishi , Takeshi Kinsho , Takeru Watanabe , Mutsuo Nakashima , Seiichiro Tachibana , Jun Hatakeyama
发明人： Koji Hasegawa , Tsunehiro Nishi , Takeshi Kinsho , Takeru Watanabe , Mutsuo Nakashima , Seiichiro Tachibana , Jun Hatakeyama
IPC分类号： C07C6974
CPC分类号： C08F220/18 , C07C69/013 , C07C69/54 , C07C69/753 , C08F222/06 , C08F232/08 , G03F7/0045 , G03F7/039
摘要： An ester compound of the following formula (1) is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is C1-C15 alkyl, k is 0 or 1, Z is a divalent C2-C20 hydrocarbon group which forms a single ring or bridged ring with the carbon atom and which may contain a hetero atom, m is 0 or 1, n is 0, 1, 2 or 3, and 2m+n=2 or 3. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and is suited for micropatterning using electron beams or deep-UV.
摘要翻译：提供下式（1）的酯化合物：R1是H，甲基或CH2CO2R3，R2是H，甲基或CO2R3，R3是C1-C15烷基，k是0或1，Z是二价C 2 -C 20烃与碳原子形成单环或桥环的基团，其可以含有杂原子，m为0或1，n为0,1,2或3,2m + n = 2或3.一种抗蚀剂组合物，其包含作为基础树脂，由酯化合物产生的聚合物对高能辐射敏感，具有优异的灵敏度，分辨率和耐蚀刻性，并且适用于使用电子束或深UV的微图案。

8. 发明授权

US06586157B2 Ester compounds, polymers, resist compositions and patterning process 有权
标题翻译：酯化合物，聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US06586157B2
公开(公告)日：2003-07-01
申请号：US09837378
申请日：2001-04-19
申请人： Koji Hasegawa , Tsunehiro Nishi , Takeshi Kinsho , Takeru Watanabe , Mutsuo Nakashima , Seiichiro Tachibana , Jun Hatakeyama
发明人： Koji Hasegawa , Tsunehiro Nishi , Takeshi Kinsho , Takeru Watanabe , Mutsuo Nakashima , Seiichiro Tachibana , Jun Hatakeyama
IPC分类号： G03F7038
CPC分类号： C08F220/18 , C07C69/013 , C07C69/54 , C07C69/753 , C08F222/06 , C08F232/08 , G03F7/0045 , G03F7/039
摘要： An ester compound of the following formula (1) is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is C1-C15 alkyl, Z is a divalent C2-C20 hydrocarbon group which forms a single ring or bridged ring with the carbon atom, m is 0 or 1, n is 0, 1, 2 or 3, and 2m+n=2 or 3. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity and resolution, and is suited for micropatterning using electron beams or deep-UV.
摘要翻译：提供下式（1）的酯化合物：R 1是H，甲基或CH 2 CO 2 R 3，R 2是H，甲基或CO 2 R 3，R 3是C 1 -C 15烷基，Z是形成单环的二价C 2 -C 20烃基或与碳原子的桥环，m为0或1，n为0,1,2或3，2m + n = 2或3.含有由酯化合物得到的聚合物作为基础树脂的抗蚀剂组合物是敏感的对高能辐射，具有优异的灵敏度和分辨率，适用于使用电子束或深紫外线的微图案。

9. 发明授权

US06413695B1 Resist compositions and patterning process 有权
标题翻译：抗蚀剂组合物和图案化工艺
公开(公告)号：US06413695B1
公开(公告)日：2002-07-02
申请号：US09572973
申请日：2000-05-18
申请人： Tsunehiro Nishi , Takeshi Kinsho , Takeru Watanabe , Koji Hasegawa , Mutsuo Nakashima , Jun Hatakeyama
发明人： Tsunehiro Nishi , Takeshi Kinsho , Takeru Watanabe , Koji Hasegawa , Mutsuo Nakashima , Jun Hatakeyama
IPC分类号： G03F7004
CPC分类号： C07C69/753 , C07C69/013 , C07C69/608 , C07C69/732 , C07C69/76 , C07C2602/42 , C07C2603/68 , C07C2603/74 , G03F7/0045 , G03F7/038 , G03F7/039
摘要： A resist composition comprising an exo-form 2-alkylbicyclo[2.2.1]heptan-2-yl ester compound as a dissolution regulator has a high sensitivity, resolution, etching resistance and storage stability and lends itself to micropatterning with electron beams or deep-UV rays.
摘要翻译：包含作为溶解调节剂的外型2-烷基双环[2.2.1]庚-2-基酯化合物的抗蚀剂组合物具有高灵敏度，分辨率，耐蚀刻性和储存稳定性，并且适用于电子束或深层的微图案，紫外线。

10. 发明授权

US06403822B2 Ester compounds having alicyclic structure and method for preparing same 有权
标题翻译：具有脂环结构的酯化合物及其制备方法
公开(公告)号：US06403822B2
公开(公告)日：2002-06-11
申请号：US09842005
申请日：2001-04-26
申请人： Takeru Watanabe , Koji Hasegawa , Takeshi Kinsho , Mutsuo Nakashima , Seiichiro Tachibana , Tsunehiro Nishi , Jun Hatakeyama
发明人： Takeru Watanabe , Koji Hasegawa , Takeshi Kinsho , Mutsuo Nakashima , Seiichiro Tachibana , Tsunehiro Nishi , Jun Hatakeyama
IPC分类号： C07C6974
CPC分类号： G03F7/0397 , C07C69/732 , C07C2601/08 , C07C2601/14 , C07C2602/42 , C07C2603/68 , C07C2603/74 , C07C2603/86 , G03F7/0395
摘要： Ester compounds of formula (1) are useful as monomers to form base resins for use in chemically amplified resist compositions adapted for micropatterning lithography. R1 is H or C1-6 alkyl, R2 is an acid labile group, k is 0 or 1, and m is an integer from 0 to 5.
摘要翻译：式（1）的酯化合物可用作单体以形成适用于微图案光刻的化学放大抗蚀剂组合物的基础树脂.R1为H或C1-6烷基，R2为酸不稳定基团，k为0或1，和 m为0〜5的整数。

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