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    • 1. 发明授权
    • Programmable level shifter
    • 可编程电平转换器
    • US07605609B1
    • 2009-10-20
    • US11957598
    • 2007-12-17
    • William B. AndrewsMou C. LinJohn Schadt
    • William B. AndrewsMou C. LinJohn Schadt
    • H03K19/0175
    • H03K3/356165
    • In one embodiment of the invention, a programmable level shifter can be selectively configured to operate in either a high-speed mode or a low-power mode. In both modes, the level shifter converts an input signal in one power supply domain into an output signal in another power supply domain. In the high-speed mode, p-type devices are configured as a current-mirror amplifier that provides the level shifter with relatively fast switching speed. In the low-power mode, the same p-type devices are configured as a cross-coupled latch that provides the level shifter with relatively low power consumption. Selectively enabled n-type devices provide the low-power mode with larger effective n-type devices to flip the cross-coupled latch formed by the p-type devices in the low-power mode.
    • 在本发明的一个实施例中,可编程电平转换器可被选择性地配置为以高速模式或低功率模式工作。 在两种模式中,电平移位器将一个电源域中的输入信号转换为另一个电源域中的输出信号。 在高速模式中,p型器件被配置为电流镜放大器,为电平转换器提供相对较快的开关速度。 在低功耗模式中,相同的p型器件被配置为交叉耦合的锁存器,其为电平移位器提供相对较低的功耗。 选择性使能的n型器件提供具有较大有效n型器件的低功耗模式,以在低功耗模式下翻转由p型器件形成的交叉耦合锁存器。
    • 2. 发明授权
    • Integrated circuit having independent voltage and process/temperature control
    • 具有独立电压和工艺/温度控制的集成电路
    • US07586325B1
    • 2009-09-08
    • US11949130
    • 2007-12-03
    • William B. AndrewsMou C. LinJohn Schadt
    • William B. AndrewsMou C. LinJohn Schadt
    • H03K17/16H03K19/003
    • H03K19/00369H03K17/14H03K19/17748H03K19/1778
    • In one embodiment, an integrated circuit has configurable application circuitry that operates at any one of multiple available power supply voltages. PT-control circuitry, operating at a PT reference voltage, generates a PT-control signal indicative of variations in process and temperature. Application-control circuitry controls the configuration of the application circuitry based on the selected power supply voltage for the application circuitry and the PT-control signal, where the selected power supply voltage is independent of the PT reference voltage. In one implementation, the application circuitry is an output driver having source and sink driver blocks, where driver-control circuitry controls the configuration of the source driver block based on the selected output-driver power supply voltage, a source PT-control signal, and a selected drive strength, while controlling the configuration of the sink driver block based on the selected output-driver power supply voltage, a sink PT-control signal, and a selected drive strength.
    • 在一个实施例中,集成电路具有可操作的多个可用电源电压中的任何一个的可配置应用电路。 以PT参考电压工作的PT控制电路产生指示过程和温度变化的PT控制信号。 应用控制电路基于用于应用电路和PT控制信号的所选择的电源电压控制应用电路的配置,其中所选择的电源电压独立于PT参考电压。 在一个实现中,应用电路是具有源和接收器驱动器块的输出驱动器,其中驱动器控制电路基于所选择的输出驱动器电源电压来控制源极驱动器模块的配置,源PT控制信号和 选择的驱动强度,同时基于所选择的输出驱动器电源电压,信宿PT控制信号和选择的驱动强度来控制接收器驱动器块的配置。
    • 3. 发明授权
    • Dynamic over-voltage protection scheme for integrated-circuit devices
    • 集成电路器件的动态过压保护方案
    • US07230810B1
    • 2007-06-12
    • US11007954
    • 2004-12-09
    • William B. AndrewsMou C. LinLarry R. Fenstermaker
    • William B. AndrewsMou C. LinLarry R. Fenstermaker
    • H02H9/04
    • H01L27/0285
    • An integrated circuit having a transistor device and over-voltage protection circuitry. The transistor device is implemented in a technology having a specified operating-voltage range, the transistor device having gate, drain, source, and tub nodes, and the specified operating-voltage range having a specified maximum voltage. The over-voltage protection circuitry is adapted to apply gate and tub voltages to the gate and tub nodes, respectively. If at least one channel voltage applied to at least one of the drain and source nodes exceeds the specified maximum voltage, then the over-voltage protection circuitry controls at least one of the gate voltage and the tub voltage to inhibit one or more adverse effects to the transistor device.
    • 具有晶体管器件和过电压保护电路的集成电路。 晶体管器件以具有指定工作电压范围的技术实现,该晶体管器件具有栅极,漏极,源极和源极节点以及具有指定最大电压的规定工作电压范围。 过电压保护电路分别适用于门和电池的电压。 如果施加到至少一个漏极和源极节点的至少一个沟道电压超过规定的最大电压,则过电压保护电路控制栅极电压和电池电压中的至少一个以抑制一个或多个不利影响 晶体管器件。
    • 4. 发明授权
    • Electronic circuit with on-chip programmable terminations
    • 具有片上可编程终端的电子电路
    • US06967500B1
    • 2005-11-22
    • US10397669
    • 2003-03-26
    • Mou C. LinWilliam AndrewsArifur Rahman
    • Mou C. LinWilliam AndrewsArifur Rahman
    • H03K17/16H04L25/02
    • H04L25/0278H03K17/164
    • An electronic circuit with programmable terminations includes a circuit block, signal pads coupled to the circuit block, programmable termination circuits each associated with a corresponding one of the signal pads, and a reference circuit operative to generate one or more control signals for application to the programmable termination circuits. A given one of the programmable termination circuits is configurable independently of at least one of the other programmable termination circuits into one of a plurality of termination states. Preferably, the programmable termination circuits are each independently configurable to provide a particular termination resistance and a particular supply terminal connection type for the associated signal pad. The invention is particularly well suited for use in integrated circuit applications, such as, for example, those involving FPGAs, FPSCs and ASICs.
    • 具有可编程端接的电子电路包括电路块,耦合到电路块的信号焊盘,每个与相应的一个信号焊盘相关联的可编程终端电路,以及可用于产生一个或多个控制信号以用于可编程 终端电路。 可编程终端电路中的给定一个可独立于至少一个其他可编程终端电路配置成多个终止状态之一。 优选地,可编程终端电路各自独立地可配置以提供特定的终端电阻和用于相关联的信号焊盘的特定供电端子连接类型。 本发明特别适用于集成电路应用,例如涉及FPGA,FPSC和ASIC的那些应用。
    • 8. 发明授权
    • Programmable termination for single-ended and differential schemes
    • 单端和差分方案的可编程终端
    • US07262630B1
    • 2007-08-28
    • US11194356
    • 2005-08-01
    • William B. AndrewsBarry K. BrittonJohn SchadtMou C. Lin
    • William B. AndrewsBarry K. BrittonJohn SchadtMou C. Lin
    • H03K19/003
    • H03K19/17744H04L25/0278
    • In one embodiment of the invention, a programmable termination structure has first and second termination circuits for corresponding pads and a programmable connection therebetween. The first termination circuit supports first and second sets of termination schemes. A shared resistor is part of at least one termination scheme in each set. The first termination circuit supports a termination scheme between the first pad and a user-defined node connected to an on-chip capacitor such that first pad is connected via the termination scheme to the on-chip capacitor. Control circuitry automatically turns on and off a termination scheme for bidirectional signaling supported by the first termination circuit, wherein (1) the control circuitry turns off the termination scheme if an output buffer is configured to present outgoing signals at the first pad and (2) the control circuitry turns on the termination scheme if the output buffer is disabled in order to terminate incoming signals received at the first pad.
    • 在本发明的一个实施例中,可编程终端结构具有用于相应焊盘的第一和第二终端电路以及它们之间的可编程连接。 第一终端电路支持第一和第二组终端方案。 共享电阻是每组中至少一个终端方案的一部分。 第一终端电路支持第一焊盘和连接到片上电容器的用户定义节点之间的终止方案,使得第一焊盘通过端接方案连接到片上电容器。 控制电路自动打开和关闭由第一终端电路支持的用于双向信令的终止方案,其中(1)如果输出缓冲器被配置为在第一焊盘处呈现输出信号,则控制电路关闭终止方案,(2) 如果禁止输出缓冲器以便终止在第一焊盘处接收到的输入信号,则控制电路接通终止方案。
    • 10. 发明授权
    • Programmable logic device having a configurable DRAM with transparent refresh
    • 具有可配置DRAM和可透明刷新的可编程逻辑器件
    • US07129749B1
    • 2006-10-31
    • US10974305
    • 2004-10-27
    • Larry R. FenstermakerJohn A. SchadtMou C. Lin
    • Larry R. FenstermakerJohn A. SchadtMou C. Lin
    • H03K19/177
    • H03K19/17748H03K19/1776H03K19/17764H03K19/1778
    • A programmable logic device (PLD) having a programmable routing structure that employs non-static memory cells, such as dynamic random access memory (DRAM) cells, to control configurable circuit elements, such as pass-transistors and/or MUXes. In a representative embodiment, each DRAM cell is connected to its corresponding configurable circuit element using a buffer adapted to stabilize the output voltage generated by the cell and offset the effect of charge leakage from the cell capacitor. In addition, refresh circuitry associated with the DRAM cell periodically restores the charge in the cell capacitor using a refresh operation that is performed in the background, without disturbing the user functions of the PLD. Advantageously, a relatively large capacitance associated with a DRAM cell makes a PLD of the invention less susceptible to soft errors than a prior-art PLD that relies on SRAM cells for configuration control of its routing structure.
    • 具有可编程路由结构的可编程逻辑器件(PLD),其使用诸如动态随机存取存储器(DRAM)单元的非静态存储器单元来控制可配置的电路元件,例如传输晶体管和/或MUX。 在代表性的实施例中,每个DRAM单元使用缓冲器连接到其对应的可配置电路元件,该缓冲器适于稳定由单元产生的输出电压并抵消来自单元电容器的电荷泄漏的影响。 此外,与DRAM单元相关联的刷新电路使用在后台执行的刷新操作来周期性地恢复单元电容器中的电荷,而不会干扰PLD的用户功能。 有利地,与DRAM单元相关联的相对大的电容使得本发明的PLD比依赖于SRAM单元的现有技术的PLD更不易受软错误的影响,用于其路由结构的配置控制。