专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

AU3528500A Apparatus and method for fixation of osteoporotic bone 未知
公开(公告)号：AU3528500A
公开(公告)日：2000-10-04
申请号：AU3528500
申请日：2000-03-15
申请人： MOHIT BHATNAGAR , ERIC MAJOR
发明人： BHATNAGAR MOHIT , MAJOR ERIC
IPC分类号： A61B17/00 , A61B17/34 , A61B17/88 , A61F2/00 , A61F2/44 , A61F2/46
摘要： A Novel surgical apparatus and method of use in osteoplasty and other methods of injecting materials into a subject for medical purposes. The present invention particularly relates to the surgical treatment of traumatic, pathogenic, or osteoporotic bone conditions of the human and other animal body systems and more particularly, to a novel apparatus and method for injection of a material into a lesion of a vertebral body or other bony structure.

2. 发明授权

US07828727B2 Minimally invasive bone manipulation device and method of use 有权
标题翻译：微创骨治疗装置及其使用方法
公开(公告)号：US07828727B2
公开(公告)日：2010-11-09
申请号：US11763113
申请日：2007-06-14
申请人： Mohit Bhatnagar , Eric D. Major , Richard W. Woods , Scott A. Jones , Robert A. Cripe , Sanjog Kumar Mathur
发明人： Mohit Bhatnagar , Eric D. Major , Richard W. Woods , Scott A. Jones , Robert A. Cripe , Sanjog Kumar Mathur
IPC分类号： A61B1/32
CPC分类号： A61B17/8858 , A61B17/00234 , A61B17/02 , A61B17/0206 , A61B17/0218 , A61B17/025 , A61B2017/0256
摘要： A surgical apparatus. The apparatus includes a handle structure, a shaft structure coupled to the handle structure, and a spreading structure coupled to the shaft structure and movable between a compact and an expanded configuration. The apparatus includes a protective sheath of shape-recovery material. The protective sheath covers the entire spreading structure in a substantially form fitting manner in any configuration of the spreading structure including the compact configuration, the expanded configuration and any configurations therebetween.
摘要翻译：手术器械该装置包括手柄结构，连接到手柄结构的轴结构，以及耦合到轴结构并且可在紧凑型和扩张型之间移动的扩展结构。该装置包括形状恢复材料的保护套。保护套以基本上形状配合的方式覆盖整个扩展结构，在包括紧凑构型，扩展构型以及其间的任何构造的扩展结构的任何构造中。

3. 发明授权

US06395007B1 Apparatus and method for fixation of osteoporotic bone 有权
标题翻译：骨质疏松骨固定装置及方法
公开(公告)号：US06395007B1
公开(公告)日：2002-05-28
申请号：US09525008
申请日：2000-03-14
申请人： Mohit Bhatnagar , Eric Major
发明人： Mohit Bhatnagar , Eric Major
IPC分类号： A61B1758
CPC分类号： A61B17/8819 , A61B17/00234 , A61B17/3472 , A61B17/8816 , A61B17/8822 , A61B17/8827 , A61B17/8833 , A61F2/441 , A61F2/4601 , A61F2/4611 , A61F2002/4623 , A61F2002/4627 , A61F2002/4635 , A61F2002/4677 , A61F2310/00353
摘要： A surgical apparatus and method of use in osteoplasty and other methods of injecting materials into a subject for medical purposes. The present invention particularly relates to the surgical treatment of traumatic, pathogenic, or osteoporotic bone conditions of the human and other animal body systems and more particularly, to an apparatus and method for injection of a material into a lesion of a vertebral body or other bony structure.
摘要翻译：用于骨整形术的外科手术装置和方法以及用于医疗目的将材料注射到受试者中的其它方法。本发明特别涉及人和其他动物体系的创伤性，致病性或骨质疏松性骨条件的手术治疗，更具体地，涉及将材料注射到椎体或其他骨骼的损伤中的装置和方法结构体。

4. 发明授权

US06180495B2 Silicon carbide transistor and method therefor 失效
标题翻译：碳化硅晶体管及其方法
公开(公告)号：US06180495B2
公开(公告)日：2001-01-30
申请号：US09054541
申请日：1998-04-03
申请人： Syd R. Wilson , Charles E. Weitzel , Mohit Bhatnagar , Karen E. Moore , Thomas A. Wetteroth
发明人： Syd R. Wilson , Charles E. Weitzel , Mohit Bhatnagar , Karen E. Moore , Thomas A. Wetteroth
IPC分类号： H01L2130
CPC分类号： H01L23/4824 , H01L29/66068 , H01L2924/0002 , H01L2924/3011 , Y10S438/931 , H01L2924/00
摘要： A silicon carbide transistor (10) is formed from a silicon carbide film (14) that is formed on a silicon carbide substrate bulk (37). A conductor pattern layer (25) is formed on the silicon carbide film (14) and the silicon carbide film (14) removed from the silicon carbide substrate bulk (37) and attached to a substrate (11) of a dissimilar semiconductor material.
摘要翻译：碳化硅晶体管（10）由形成在碳化硅衬底体（37）上的碳化硅膜（14）形成。在碳化硅膜（14）上形成导体图形层（25），从碳化硅衬底体（37）上除去碳化硅膜（14），并附着到不同的半导体材料的衬底（11）上。

5. 发明授权

US5917204A Insulated gate bipolar transistor with reduced electric fields 失效
标题翻译：具有减小电场的绝缘栅双极晶体管
公开(公告)号：US5917204A
公开(公告)日：1999-06-29
申请号：US829035
申请日：1997-03-31
申请人： Mohit Bhatnagar , Charles E. Weitzel
发明人： Mohit Bhatnagar , Charles E. Weitzel
IPC分类号： H01L29/16 , H01L21/04 , H01L29/10 , H01L29/12 , H01L29/20 , H01L29/24 , H01L29/739 , H01L29/78 , H01L29/74
CPC分类号： H01L29/66068 , H01L29/1095 , H01L29/7391 , H01L29/7392 , H01L29/7395 , H01L29/1608 , H01L29/20 , H01L29/2003
摘要： AN IGBT including a collector positioned on one surface of a substrate and a doped structure having a buried region therein positioned on the other surface of the substrate. The buried region defining a drift region in the doped structure extending vertically from the substrate and further defining a doped region in communication with the drift region and adjacent the surface of the doped structure. An emitter positioned on the doped structure in communication with the doped region. An insulating layer positioned on the doped structure with a metal gate positioned on the insulating layer so as to define a conduction channel extending laterally adjacent the control terminal and communicating with the drift region and the emitter. The substrate and buried region are the same conductivity and opposite the doped region to form a bipolar transistor therebetween.
摘要翻译：一种IGBT，其包括位于衬底的一个表面上的集电极和其中位于衬底的另一表面上的埋入区域的掺杂结构。所述掩埋区域限定在所述掺杂结构中的漂移区域，所述漂移区域从所述衬底垂直延伸，并进一步限定与所述漂移区域相邻并且与所述掺杂结构的表面相邻的掺杂区域。位于与掺杂区域连通的掺杂结构上的发射极。绝缘层，位于掺杂结构上，金属栅极位于绝缘层上，以便限定在横向邻近控制端延伸并与漂移区和发射极连通的导电通道。衬底和掩埋区域具有相同的导电性并且与掺杂区域相反，以在它们之间形成双极晶体管。

6. 发明授权

US5895260A Method of fabricating semiconductor devices and the devices 失效
标题翻译：制造半导体器件和器件的方法
公开(公告)号：US5895260A
公开(公告)日：1999-04-20
申请号：US625606
申请日：1996-03-29
申请人： Mohit Bhatnagar , Charles E. Weitzel , Christine Thero
发明人： Mohit Bhatnagar , Charles E. Weitzel , Christine Thero
IPC分类号： H01L21/04 , H01L29/872 , H01L21/28
CPC分类号： H01L29/6606 , H01L29/872
摘要： Fabricating a device including a Schottky diode by growing a dielectric film on a SiC substrate structure and forming an ohmic contact on the opposite surface of the substrate structure by depositing a layer of metal and annealing at a temperature above 900.degree. C. Implanting doping material in the substrate structure through spaced apart openings to form high resistivity areas and depositing a dielectric layer on the dielectric film to define a contact opening positioned between the spaced apart high resistivity areas. Annealing the implant at a temperature less than approximately 400.degree. C. to reduce reverse leakage current and depositing metal in the contact opening to form a Schottky contact.
摘要翻译：通过在SiC衬底结构上生长电介质膜制造包括肖特基二极管的器件，并通过沉积一层金属并在高于900℃的温度退火，在衬底结构的相对表面上形成欧姆接触。将掺杂材料衬底结构通过间隔开的开口形成高电阻率区域，并在电介质膜上沉积介电层以限定位于间隔开的高电阻率区域之间的接触开口。在低于约400℃的温度下退火植入物以减少反向漏电流并在接触开口中沉积金属以形成肖特基接触。

7. 发明授权

US5569937A High breakdown voltage silicon carbide transistor 失效
标题翻译：高击穿电压碳化硅晶体管
公开(公告)号：US5569937A
公开(公告)日：1996-10-29
申请号：US519864
申请日：1995-08-28
申请人： Mohit Bhatnagar , Charles E. Weitzel , Christine Thero
发明人： Mohit Bhatnagar , Charles E. Weitzel , Christine Thero
IPC分类号： H01L29/06 , H01L29/24 , H01L29/40 , H01L29/78 , H01L31/0312
CPC分类号： H01L29/404 , H01L29/0615 , H01L29/1608 , H01L29/7835
摘要： A lateral silicon carbide transistor (10) utilizes a modulated channel region (18) to form an accumulation region that facilitates a low on-resistance. A doped region of the channel layer forms a channel insert (14) that also lowers the on-resistance of the transistor (10). A damage termination layer (27) is utilized to facilitate providing a high breakdown voltage. Field plates (23,24) also assists in increasing the breakdown voltage and decreasing the on-resistance of the transistor (10).
摘要翻译：横向碳化硅晶体管（10）利用调制的沟道区（18）形成促进低导通电阻的积聚区。沟道层的掺杂区域形成还降低晶体管（10）的导通电阻的沟道插入件（14）。利用破坏终止层（27）来提供高的击穿电压。场板（23,24）还有助于提高击穿电压并降低晶体管（10）的导通电阻。

8. 发明申请

US20070239162A1 MINIMALLY INVASIVE BONE MANIPULATION DEVICE AND METHOD OF USE 有权
标题翻译：微小的入骨治疗装置及其使用方法
公开(公告)号：US20070239162A1
公开(公告)日：2007-10-11
申请号：US11763113
申请日：2007-06-14
申请人： Mohit BHATNAGAR , Eric MAJOR , Richard WOODS , Scott JONES , Robert CRIPE , Sanjog MATHUR
发明人： Mohit BHATNAGAR , Eric MAJOR , Richard WOODS , Scott JONES , Robert CRIPE , Sanjog MATHUR
IPC分类号： A61B17/58
CPC分类号： A61B17/8858 , A61B17/00234 , A61B17/02 , A61B17/0206 , A61B17/0218 , A61B17/025 , A61B2017/0256
摘要： A surgical apparatus. The apparatus includes a handle structure, a shaft structure coupled to the handle structure, and a spreading structure coupled to the shaft structure and movable between a compact and an expanded configuration. The apparatus includes a protective sheath of shape-recovery material. The protective sheath covers the entire spreading structure in a substantially form fitting manner in any configuration of the spreading structure including the compact configuration, the expanded configuration and any configurations therebetween.
摘要翻译：手术器械该装置包括手柄结构，连接到手柄结构的轴结构，以及耦合到轴结构并且可在紧凑型和扩张型之间移动的扩展结构。该装置包括形状恢复材料的保护套。保护套以基本上形状配合的方式覆盖整个扩展结构，在包括紧凑构型，扩展构型以及其间的任何构造的扩展结构的任何构造中。

9. 发明授权

US06887246B2 Apparatus and method for fixation of osteoporotic bone 有权
标题翻译：骨质疏松骨固定装置及方法
公开(公告)号：US06887246B2
公开(公告)日：2005-05-03
申请号：US10152017
申请日：2002-05-22
申请人： Mohit Bhatnagar , Eric Major
发明人： Mohit Bhatnagar , Eric Major
IPC分类号： A61B17/00 , A61B17/34 , A61B17/88 , A61F2/00 , A61F2/44 , A61F2/46 , A61B17/58
CPC分类号： A61B17/8819 , A61B17/00234 , A61B17/3472 , A61B17/8816 , A61B17/8822 , A61B17/8827 , A61B17/8833 , A61F2/441 , A61F2/4601 , A61F2/4611 , A61F2002/4623 , A61F2002/4627 , A61F2002/4635 , A61F2002/4677 , A61F2310/00353
摘要： A Novel surgical apparatus and method of use in osteoplasty and other methods of injecting materials into a subject for medical purposes. The present invention particularly relates to the surgical treatment of traumatic, pathogenic, or osteoporotic bone conditions of the human and other animal body systems and more particularly, to a novel apparatus and method for injection of a material into a lesion of a vertebral body or other bony structure.
摘要翻译：一种用于骨科成形术的新型外科手术装置和方法以及用于医疗目的将材料注射到受试者中的其它方法。本发明特别涉及人和其他动物体系的创伤性，致病性或骨质疏松性骨条件的手术治疗，更具体地，涉及用于将材料注射到椎体或其它部位的损伤中的新型装置和方法骨结构。

10. 发明授权

US6146926A Lateral gate, vertical drift region transistor 失效
标题翻译：横向栅极，垂直漂移区晶体管
公开(公告)号：US6146926A
公开(公告)日：2000-11-14
申请号：US136492
申请日：1998-08-19
申请人： Mohit Bhatnagar , Charles E. Weitzel
发明人： Mohit Bhatnagar , Charles E. Weitzel
IPC分类号： H01L21/04 , H01L21/336 , H01L29/10 , H01L29/12 , H01L29/20 , H01L29/24 , H01L29/78 , H01L21/332
CPC分类号： H01L29/7828 , H01L29/1095 , H01L29/66068 , H01L29/66666 , H01L29/66712 , H01L29/7802 , H01L29/1608 , H01L29/20 , H01L29/2003
摘要： A lateral gate, vertical drift region transistor including a drain positioned on one surface of a substrate and a doped structure having a buried region therein positioned on the other surface of the substrate. The buried region defining a drift region in the doped structure extending vertically from the substrate and further defining a doped region in communication with the drift region and adjacent the surface of the doped structure. A source positioned on the doped structure in communication with the doped region and an implant region positioned in the doped region adjacent the surface and in communication with the source and buried region. An insulating layer positioned on the doped structure with a metal gate positioned on the insulating layer so as to define an inversion region in the implant region extending laterally adjacent the control terminal and communicating with the drift region and the source.
摘要翻译：横向栅极，垂直漂移区晶体管，其包括位于衬底的一个表面上的漏极和其中位于衬底的另一表面上的埋入区的掺杂结构。所述掩埋区域限定在所述掺杂结构中的漂移区域，所述漂移区域从所述衬底垂直延伸，并进一步限定与所述漂移区域相邻并且与所述掺杂结构的表面相邻的掺杂区域。位于与掺杂区域连通的掺杂结构上的源极和位于邻近表面并与源极和掩埋区域连通的掺杂区域中的注入区域。绝缘层，其位于所述掺杂结构上，金属栅极位于所述绝缘层上，以便在所述注入区域中限定反向区域，所述反转区域横向延伸延伸到所述控制端子并且与所述漂移区域和所述源极连通。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式