专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07173445B2 Sensor for inspection instrument and inspection instrument 失效
标题翻译：检测仪器和检验仪器传感器
公开(公告)号：US07173445B2
公开(公告)日：2007-02-06
申请号：US10487828
申请日：2002-08-27
申请人： Tatsuhisa Fujii , Kazuhiro Monden , Mikiya Kasai , Shogo Ishioka , Shuji Yamaoka
发明人： Tatsuhisa Fujii , Kazuhiro Monden , Mikiya Kasai , Shogo Ishioka , Shuji Yamaoka
IPC分类号： G01R31/00 , G01R31/28
CPC分类号： G01R31/312
摘要： Disclosed is an inspection sensor and inspection apparatus capable of accurately inspecting the shape of a conductive pattern. A sensor element 12a includes an MOSFET, and an aluminum electrode (AL) serving as a passive element 80. The passive element or aluminum electrode 80 is connected to the gate of a MOSFET 81 and the source of a MOSFET 82. A voltage VDD is supplied from a power supply circuit 18 to the drain of the MOSFET 81, and the source of the MOSFET 81 is connected to the drain of a MOSFET 83. A reset signal is entered from a vertical selection section 14 into the gate of the MOSFET 82, and the voltage VDD is supplied from the power supply circuit 18 to the drain of the MOSFET 82. A selection signal is entered from the vertical selection section 14 into the gate of the MOSFET 83, and an output from the source of the MOSFET 83 is entered into a lateral selection section 13.
摘要翻译：公开了能够精确地检查导电图案的形状的检查传感器和检查装置。传感器元件12a包括MOSFET和用作无源元件80的铝电极（AL）。无源元件或铝电极80连接到MOSFET81的栅极和MOSFET82的源极。电压VDD从电源电路18提供给MOSFET 81的漏极，MOSFET81的源极连接到MOSFET 83的漏极。复位信号从垂直选择部分14进入到MOSFET82的栅极，并且电压VDD从电源电路18提供给MOSFET82的漏极。选择信号从垂直选择部分14进入到MOSFET 83的栅极，并且来自MOSFET 83的源极的输出进入横向选择部分13。

IPRDB

热门服务

关于我们

友情链接

联系方式