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1. 发明授权

US5002630A Method for high temperature thermal processing with reduced convective heat loss 失效
标题翻译：降低对流热损失的高温热处理方法
公开(公告)号：US5002630A
公开(公告)日：1991-03-26
申请号：US361986
申请日：1989-06-06
申请人： Ahmad Kermani , Mike F. Robertson , Yen-Hui Ku , Fred Wong
发明人： Ahmad Kermani , Mike F. Robertson , Yen-Hui Ku , Fred Wong
IPC分类号： C30B25/10 , C30B25/14
CPC分类号： C30B25/14 , C30B25/10
摘要： A method for inducing a reaction in a reaction chamber of a reactive carrier having a first specific heat, on a reaction surface of a substrate. The method comprises the steps of supporting the substrate in the reaction chamber. Next, the substrate is heated to a reaction temperature, so that the reaction surface has an essentially balanced temperature distribution. The reactive carrier is mixed with an inert gas having a second specific heat to form a reaction mixture, wherein the second specific heat is lower than the first specific heat. Finally, the reaction mixture is supplied into the chamber so that it flows over the surface of the substrate. Because the inert gas has a lower specific heat than the carrier, the overall specific heat of the reaction mixture is reduced. With a lower specific heat, less heat is transferred from the wafer into the reaction mixture. This reduces convective heat loss and thermal gradients in the substrate. The technique is particularly applicable to rapid thermal processing of semiconductor wafers for epitaxial growth of silicon. According to this aspect, hydrogen is the reactive carrier, mixed with a chlorinated silicon source. The inert gas may be argon.
摘要翻译：在基板的反应面上，在具有第一比热的反应性载体的反应室中进行反应的方法。该方法包括在反应室中支撑基底的步骤。接下来，将基板加热至反应温度，使得反应表面具有基本平衡的温度分布。将反应性载体与具有第二比热的惰性气体混合以形成反应混合物，其中第二比热低于第一比热。最后，将反应混合物供给到室中，使其流过衬底的表面。由于惰性气体的比热比载体低，所以反应混合物的总体比热降低。具有较低的比热，较少的热从晶片转移到反应混合物中。这降低了衬底中的对流热损失和热梯度。该技术特别适用于用于硅的外延生长的半导体晶片的快速热处理。根据该方面，氢是与氯化硅源混合的反应性载体。惰性气体可以是氩气。

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