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1. 发明授权

US4638341A Gated transmission line model structure for characterization of field-effect transistors 失效
标题翻译：用于表征场效应晶体管的门控传输线模型结构
公开(公告)号：US4638341A
公开(公告)日：1987-01-20
申请号：US647769
申请日：1984-09-06
申请人： Steven M. Baier , Nicholas C. Cirillo, Jr. , Steven A. Hanka , Michael S. Shur
发明人： Steven M. Baier , Nicholas C. Cirillo, Jr. , Steven A. Hanka , Michael S. Shur
IPC分类号： G01R27/02 , G01R31/26 , H01L27/06 , H01L27/095 , H01L29/48 , H01L29/56 , H01L29/64
CPC分类号： H01L27/0605 , G01R27/02 , G01R31/2621 , H01L27/095
摘要： The gated Transmission Line Model (GTLM) structure is a novel characterization device and measurement tool for integrated circuit process monitoring. This test structure has Schottky gates between the ohmic contacts of a TLM pattern. The gate lengths are varied and the gate-to- ohmic separations are kept constant to provide an accurate determination of several important FET channel parameters. It offers a precise method for measuring the FET source resistance which requires no parameter fitting and which works equally well on planar, self-aligned gate, and recessed gate FET's. In addition, the GTLM structure offers the only available means to measure sheet resistance of enhancement-mode FET channels. The gated-TLM structure can also be used to find the effective free surface potential. The structure may be combined with capacitance-voltage analysis or geometric magnetoresistance analysis to create mobility and doping profile of actual FET channels. Further, the GTLM structure may be implemented in any existing semiconductor FET technology, including silicon, GaAs, and modulation-doped structures.
摘要翻译：门控传输线模型（GTLM）结构是一种用于集成电路过程监控的新型表征设备和测量工具。该测试结构在TLM图案的欧姆接触之间具有肖特基门。栅极长度是变化的，并且栅极 - 欧姆分离保持恒定以提供几个重要的FET沟道参数的精确确定。它提供了一种用于测量FET源电阻的精确方法，该方法不需要参数拟合，并且在平面，自对准栅极和凹陷栅极FET上同样适用。此外，GTLM结构提供了唯一可用于测量增强型FET通道的薄层电阻的方法。门控TLM结构也可用于找到有效的自由表面电位。该结构可以与电容电压分析或几何磁阻分析结合，以产生实际FET通道的迁移率和掺杂分布。此外，GTLM结构可以在任何现有的半导体FET技术中实现，包括硅，GaAs和调制掺杂结构。

2. 发明授权

US06943377B2 Light emitting heterostructure 有权
标题翻译：发光异质结构
公开(公告)号：US06943377B2
公开(公告)日：2005-09-13
申请号：US10690760
申请日：2003-10-22
申请人： Remigijus Gaska , Michael S. Shur
发明人： Remigijus Gaska , Michael S. Shur
IPC分类号： H01L33/10 , H01L33/38 , H01S5/10 , H01S5/125 , H01S5/187 , H01S5/323 , H01L27/15
CPC分类号： H01L33/10 , H01L33/06 , H01L33/387 , H01L33/405 , H01L2933/0083 , H01S5/105 , H01S5/125 , H01S5/187 , H01S5/32341
摘要： An improved light emitting heterostructure. In particular, a nitride-based light emitting heterostructure is provided that includes a light generating structure and a distributed semiconductor heterostructure Bragg reflector structure formed above the light generating structure. In operation, the light generating structure generates light, a portion of which is reflected by the distributed semiconductor heterostructure Bragg reflector structure, thereby increasing the total amount of light that can be emitted from the heterostructure.
摘要翻译：改进的发光异质结构。特别地，提供了一种氮化物基发光异质结构，其包括形成在发光结构上方的发光结构和分布式半导体异质结构布拉格反射器结构。在操作中，发光结构产生光，其一部分由分布式半导体异质结构布拉格反射器结构反射，从而增加可从异质结构发射的光的总量。

3. 发明授权

US4814851A High transconductance complementary (Al,Ga)As/gas heterostructure insulated gate field-effect transistor 失效
标题翻译：高跨导互补（Al，Ga）As /气体异质结构绝缘栅场效应晶体管
公开(公告)号：US4814851A
公开(公告)日：1989-03-21
申请号：US188069
申请日：1988-04-28
申请人： Jonathan K. Abrokwah , Nicholas C. Cirillo, Jr. , Michael S. Shur , Obert N. Tufte
发明人： Jonathan K. Abrokwah , Nicholas C. Cirillo, Jr. , Michael S. Shur , Obert N. Tufte
IPC分类号： H01L29/812 , H01L21/338 , H01L21/8222 , H01L27/06 , H01L27/08 , H01L27/082 , H01L29/43 , H01L29/778 , H01L27/02
CPC分类号： H01L27/08 , H01L27/0605 , H01L29/432 , H01L29/7786
摘要： A complementary (Al,Ga)As/GaAs heterostructure insulated gate field-effect transistor (HIGFET) approach is described in which both the n-channel and p-channel transistors utilize a two-dimensional electron (hole) gas in undoped high mobility channels to form planar, complementary GaAs-based integrated circuits.
摘要翻译：描述了互补（Al，Ga）As / GaAs异质结构绝缘栅场效应晶体管（HIGFET）方法，其中n沟道和p沟道晶体管都在未掺杂的高迁移率通道中利用二维电子（空穴）气体以形成平面，互补的基于GaAs的集成电路。

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