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    • 9. 发明申请
    • POLISHING INHIBITING LAYER FORMING ADDITIVE
    • 抛光抑制层形成添加剂
    • US20080230741A1
    • 2008-09-25
    • US12110512
    • 2008-04-28
    • Michael J. MacDonald
    • Michael J. MacDonald
    • C09K13/00
    • H01L21/31053C09G1/02
    • A polishing inhibiting layer forming additive for a slurry, the slurry so formed, and a method of chemical mechanical polishing are disclosed. The polishing inhibiting layer is formed through application of the slurry to the surface being polished and is removable at a critical polishing pressure. The polishing inhibiting layer allows recessed or low pattern density locations to be protected until a critical polishing pressure is exceeded based on geometric and planarity considerations, rather than slurry or polishing pad considerations. With the additive, polishing rate is non-linear relative to polishing pressure in a recessed/less pattern dense location. In one embodiment, the additive has a chemical structure: [CH3(CH2)xN(R)]M, wherein M is selected from the group consisting of: Cl, Br and I, x equals an integer between 2 and 24, and the R includes three carbon-based functional groups, each having less than eight carbon atoms.
    • 公开了一种用于浆料的抛光抑制层形成添加剂,如此形成的浆料,以及化学机械抛光方法。 抛光抑制层通过将浆料施加到被抛光表面而形成,并且在临界抛光压力下可移除。 抛光抑制层允许凹陷或低图案密度位置被保护,直到基于几何和平面性考虑超过临界抛光压力,而不是浆料或抛光垫考虑。 使用添加剂,抛光速率相对于凹陷/较少图案密集位置中的抛光压力是非线性的。 在一个实施方案中,添加剂具有以下化学结构:[CH 3(CH 2)x N(R)] M,其中M为 选自:Cl,Br和I,x等于2至24之间的整数,并且R包括三个碳基官能团,每个碳基官能团各自具有少于8个碳原子。