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1. 发明授权

US08415678B2 Semiconductor device and display device 有权
标题翻译：半导体器件和显示器件
公开(公告)号：US08415678B2
公开(公告)日：2013-04-09
申请号：US13321411
申请日：2010-05-20
申请人： Masaki Yamanaka , Hiroshi Nakatsuji , Naoki Makita
发明人： Masaki Yamanaka , Hiroshi Nakatsuji , Naoki Makita
IPC分类号： H01L31/0368
CPC分类号： H01L27/12 , G02F1/136209 , G02F2001/13312 , H01L21/268 , H01L27/1233 , H01L29/78696 , H01L31/105
摘要： A semiconductor device of the present invention is a semiconductor device including a thin film transistor and a thin film diode. A semiconductor layer (113) of the thin film transistor and a semiconductor layer (114) of the thin film diode are both crystalline semiconductor layers. The semiconductor layer (113) of the thin film transistor and the semiconductor layer (114) of the thin film diode respectively include portions formed by crystallizing the same amorphous semiconductor film. The thickness of the semiconductor layer (114) of the thin film diode is greater than the thickness of the semiconductor layer (113) of the thin film transistor. The difference between the thickness of the semiconductor layer (113) of the thin film transistor and the thickness of the semiconductor layer (114) of the thin film diode is greater than 25 nm. The surface roughness of the semiconductor layer (114) of the thin film diode is larger than the surface roughness of the semiconductor layer (113) of the thin film transistor. As a result, the thin film transistor and the thin film diode achieve respective required characteristics.
摘要翻译：本发明的半导体器件是包括薄膜晶体管和薄膜二极管的半导体器件。薄膜晶体管的半导体层（113）和薄膜二极管的半导体层（114）都是结晶半导体层。薄膜晶体管的半导体层（113）和薄膜二极管的半导体层（114）分别包括通过使相同的非晶半导体膜结晶而形成的部分。薄膜二极管的半导体层（114）的厚度大于薄膜晶体管的半导体层（113）的厚度。薄膜晶体管的半导体层（113）的厚度与薄膜二极管的半导体层（114）的厚度之差大于25nm。薄膜二极管的半导体层（114）的表面粗糙度大于薄膜晶体管的半导体层（113）的表面粗糙度。结果，薄膜晶体管和薄膜二极管实现了各自所需的特性。

2. 发明申请

US20120068182A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE 有权
标题翻译：半导体器件，其制造方法和显示器件
公开(公告)号：US20120068182A1
公开(公告)日：2012-03-22
申请号：US13321411
申请日：2010-05-20
申请人： Masaki Yamanaka , Hiroshi Nakatsuji , Naoki Makita
发明人： Masaki Yamanaka , Hiroshi Nakatsuji , Naoki Makita
IPC分类号： H01L33/08 , H01L21/336
CPC分类号： H01L27/12 , G02F1/136209 , G02F2001/13312 , H01L21/268 , H01L27/1233 , H01L29/78696 , H01L31/105
摘要： A semiconductor device of the present invention is a semiconductor device including a thin film transistor and a thin film diode. A semiconductor layer (113) of the thin film transistor and a semiconductor layer (114) of the thin film diode are both crystalline semiconductor layers. The semiconductor layer (113) of the thin film transistor and the semiconductor layer (114) of the thin film diode respectively include portions formed by crystallizing the same amorphous semiconductor film. The thickness of the semiconductor layer (114) of the thin film diode is greater than the thickness of the semiconductor layer (113) of the thin film transistor. The difference between the thickness of the semiconductor layer (113) of the thin film transistor and the thickness of the semiconductor layer (114) of the thin film diode is greater than 25 nm. The surface roughness of the semiconductor layer (114) of the thin film diode is larger than the surface roughness of the semiconductor layer (113) of the thin film transistor. As a result, the thin film transistor and the thin film diode achieve respective required characteristics.
摘要翻译：本发明的半导体器件是包括薄膜晶体管和薄膜二极管的半导体器件。薄膜晶体管的半导体层（113）和薄膜二极管的半导体层（114）都是结晶半导体层。薄膜晶体管的半导体层（113）和薄膜二极管的半导体层（114）分别包括通过使相同的非晶半导体膜结晶而形成的部分。薄膜二极管的半导体层（114）的厚度大于薄膜晶体管的半导体层（113）的厚度。薄膜晶体管的半导体层（113）的厚度与薄膜二极管的半导体层（114）的厚度之差大于25nm。薄膜二极管的半导体层（114）的表面粗糙度大于薄膜晶体管的半导体层（113）的表面粗糙度。结果，薄膜晶体管和薄膜二极管实现了各自所需的特性。

3. 发明授权

US08106401B2 Display device including metal lines provided above photodiode 有权
标题翻译：显示装置，包括光电二极管上方提供的金属线
公开(公告)号：US08106401B2
公开(公告)日：2012-01-31
申请号：US12595322
申请日：2008-04-17
申请人： Masaki Yamanaka , Hiromi Katoh , Christopher Brown
发明人： Masaki Yamanaka , Hiromi Katoh , Christopher Brown
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L31/035281 , G02F1/13318 , G02F1/1362 , H01L27/1446 , H01L31/0232 , H01L31/153 , H01L31/1804 , Y02E10/547
摘要： Provided are a display device in which variation in output characteristics of the photodiode is suppressed, and a method for manufacturing the display device. The display device is provided with the active matrix substrate (2) and photodiode (6). First, on a substrate of glass (12), a silicon film (8) and an interlayer insulation film (15) for covering the silicon film (8) are formed in this order. Then, a metal film is formed, and metal lines (10, 11) traversing the silicon film (8) are formed by etching the metal film. Then, p-type impurity ions are implanted by using a mask that has an opening (24a) that exposes a portion that overlaps a region where a p-layer (9a) is to be formed, a part of the opening (24a) being formed with the metal line (10). Furthermore, n-type impurity ions are implanted by using a mask that has an opening (25b) that exposes a portion that overlaps a region where an n-layer (9c) is to be formed, a part of the opening (25a) being formed with the metal line (11).
摘要翻译：提供了抑制光电二极管的输出特性的变化的显示装置及其制造方法。显示装置设置有有源矩阵基板（2）和光电二极管（6）。首先，在玻璃基板（12）上依次形成用于覆盖硅膜（8）的硅膜（8）和层间绝缘膜（15）。然后，形成金属膜，通过蚀刻金属膜形成穿过硅膜（8）的金属线（10,11）。然后，通过使用具有露出与形成有p层（9a）的区域重叠的部分的开口（24a）的掩模来注入p型杂质离子，开口部（24a）的一部分与金属线（10）形成。此外，通过使用具有露出与要形成n层（9c）的区域重叠的部分的开口（25b）的掩模来注入n型杂质离子，所述开口（25a）的一部分为与金属线（11）形成。

4. 发明授权

US07892991B2 Elastic network structure 有权
标题翻译：弹性网络结构
公开(公告)号：US07892991B2
公开(公告)日：2011-02-22
申请号：US11722265
申请日：2005-12-20
申请人： Masaki Yamanaka , Yoshihiro Matsui
发明人： Masaki Yamanaka , Yoshihiro Matsui
IPC分类号： D04H3/03 , D04H3/07 , D04H3/14 , D04H3/16
CPC分类号： D04H13/00 , D04H3/03 , D04H3/05 , Y10T442/601 , Y10T442/69
摘要： Provided is an elastic network structure having durability and cushioning properties suitable for furniture, bedding such as a bed, seats for vehicles, seats for shipping, etc., the network structure being lightweight and having excellent chemical resistance, excellent light resistance, soft repellency, and excellent cushioning characteristics in a low temperature environment. The elastic network structure comprises a three-dimensional random loop bonded structure obtained by forming random loops with curling treatment of a continuous linear structure having not less than 300 decitex, and by making each loop mutually contact in a molten state to weld the majority of contacted part, the continuous linear structure mainly including a low density polyethylene resin with a specific gravity of not more than 0.94 g/cm3.
摘要翻译：本发明提供一种具有耐用性和缓冲性的弹性网状结构，其适用于家具，床上用品，车辆用座椅，运输座椅等，网状结构重量轻，耐化学性优异，耐光性优异，防排斥性，在低温环境下具有优异的缓冲特性。弹性网络结构包括通过形成具有不小于300分特的连续线性结构的卷曲处理的随机环获得的三维随机环接合结构，并且通过使每个环在熔融状态下相互接触以焊接大部分接触部分连续线性结构主要包括比重不超过0.94 g / cm3的低密度聚乙烯树脂。

5. 外观设计

USD589290S1 Floor mat 有权
公开(公告)号：USD589290S1
公开(公告)日：2009-03-31
申请号：US29259506
申请日：2006-05-10
申请人： Toshie Hatta , Masaki Yamanaka , Motohiro Saito
设计人： Toshie Hatta , Masaki Yamanaka , Motohiro Saito

6. 发明申请

US20130146879A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130146879A1
公开(公告)日：2013-06-13
申请号：US13703987
申请日：2011-06-13
申请人： Masaki Yamanaka , Kazushige Hotta
发明人： Masaki Yamanaka , Kazushige Hotta
IPC分类号： H01L27/092 , H01L33/00 , H01L29/786
CPC分类号： H01L27/092 , G02F1/136204 , G02F1/136259 , G02F2001/136245 , H01L27/11 , H01L27/1108 , H01L27/1222 , H01L29/786 , H01L29/78696 , H01L33/0041
摘要： Disclosed is a semiconductor device in which an n-channel type first thin film transistor and a p-channel type second thin film transistor are provided on the same substrate. The first thin film transistor has a first semiconductor layer (11), and the second thin film transistor has a second semiconductor layer (20), a third semiconductor layer (21), and a fourth semiconductor layer (22). The first semiconductor layer (11), the second semiconductor layer (20), the third semiconductor layer (21) and the fourth semiconductor layer (22) are formed of the same film, and the first and second semiconductor layers (11, 20) respectively have slanted portions (11e, 20e) positioned at respective peripheries, and main portions (11m, 20m) made of portions other than the slanted portions. A p-type impurity is implanted into the slanted portion (11e) of the first semiconductor layer at a concentration higher than that in the main portion (11m) of the first semiconductor layer and that in the main portion (20m) of the second semiconductor layer.
摘要翻译：公开了一种半导体器件，其中在同一衬底上设置有n沟道型第一薄膜晶体管和p沟道型第二薄膜晶体管。第一薄膜晶体管具有第一半导体层（11），第二薄膜晶体管具有第二半导体层（20），第三半导体层（21）和第四半导体层（22）。第一半导体层（11），第二半导体层（20），第三半导体层（21）和第四半导体层（22）由相同的膜形成，第一和第二半导体层（11,20）分别具有位于相应周边的倾斜部分（11e，20e）以及由倾斜部分以外的部分制成的主要部分（11m，20m）。在第一半导体层的倾斜部分（11e）中以比第一半导体层的主要部分（11m）高的浓度注入p型杂质，并且在第二半导体的主要部分（20m）中注入p型杂质层。

7. 发明授权

US08460954B2 Semiconductor device, method for manufacturing same, and display device 有权
标题翻译：半导体装置及其制造方法以及显示装置
公开(公告)号：US08460954B2
公开(公告)日：2013-06-11
申请号：US13125776
申请日：2009-10-22
申请人： Masaki Yamanaka , Hiroshi Nakatsuji , Naoki Makita
发明人： Masaki Yamanaka , Hiroshi Nakatsuji , Naoki Makita
IPC分类号： H01L21/00 , H01L21/20 , H01L21/36 , H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L29/66757 , G02F1/1368 , G02F2001/13312 , H01L27/0629 , H01L27/12 , H01L27/1229 , H01L27/1233 , H01L27/14612 , H01L29/78633 , H01L29/861
摘要： A semiconductor device includes a thin film transistor and a thin film diode on a same substrate. A semiconductor layer (109) of the thin film transistor and a semiconductor layer (110) of the thin film diode are crystalline semiconductor layers formed by crystallizing the same non-crystalline semiconductor film. The thickness of the semiconductor layer (110) of the thin film diode is greater than the thickness of the semiconductor layer (109) of the thin film transistor, and the surface of the semiconductor layer (110) of the thin film diode is rougher than the surface of the semiconductor layer (109) of the thin film transistor.
摘要翻译：半导体器件在同一衬底上包括薄膜晶体管和薄膜二极管。薄膜晶体管的半导体层（109）和薄膜二极管的半导体层（110）是通过使相同的非晶半导体膜结晶而形成的结晶半导体层。薄膜二极管的半导体层（110）的厚度大于薄膜晶体管的半导体层（109）的厚度，并且薄膜二极管的半导体层（110）的表面比薄膜晶体管的半导体层（109）的表面。

8. 发明申请

US20110198608A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE 有权
标题翻译：半导体器件，其制造方法和显示器件
公开(公告)号：US20110198608A1
公开(公告)日：2011-08-18
申请号：US13125776
申请日：2009-10-22
申请人： Masaki Yamanaka , Hiroshi Nakatsuji , Naoki Makita
发明人： Masaki Yamanaka , Hiroshi Nakatsuji , Naoki Makita
IPC分类号： H01L31/0368 , H01L29/786 , H01L21/20 , H01L29/04 , H01L31/14 , B82Y99/00
CPC分类号： H01L29/66757 , G02F1/1368 , G02F2001/13312 , H01L27/0629 , H01L27/12 , H01L27/1229 , H01L27/1233 , H01L27/14612 , H01L29/78633 , H01L29/861
摘要： A semiconductor device includes a thin film transistor and a thin film diode on a same substrate. A semiconductor layer (109) of the thin film transistor and a semiconductor layer (110) of the thin film diode are crystalline semiconductor layers formed by crystallizing the same non-crystalline semiconductor film. The thickness of the semiconductor layer (110) of the thin film diode is greater than the thickness of the semiconductor layer (109) of the thin film transistor, and the surface of the semiconductor layer (110) of the thin film diode is rougher than the surface of the semiconductor layer (109) of the thin film transistor.
摘要翻译：半导体器件在同一衬底上包括薄膜晶体管和薄膜二极管。薄膜晶体管的半导体层（109）和薄膜二极管的半导体层（110）是通过使相同的非晶半导体膜结晶而形成的结晶半导体层。薄膜二极管的半导体层（110）的厚度大于薄膜晶体管的半导体层（109）的厚度，并且薄膜二极管的半导体层（110）的表面比薄膜晶体管的半导体层（109）的表面。

9. 发明申请

US20100140631A1 DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20100140631A1
公开(公告)日：2010-06-10
申请号：US12595322
申请日：2008-04-17
申请人： Masaki Yamanaka , Hiromi Katoh , Christopher Brown
发明人： Masaki Yamanaka , Hiromi Katoh , Christopher Brown
IPC分类号： H01L33/00 , H01L21/265
CPC分类号： H01L31/035281 , G02F1/13318 , G02F1/1362 , H01L27/1446 , H01L31/0232 , H01L31/153 , H01L31/1804 , Y02E10/547
摘要： Provided are a display device in which variation in output characteristics of the photodiode is suppressed, and a method for manufacturing the display device. The display device is provided with the active matrix substrate (2) and photodiode (6). First, on a substrate of glass (12), a silicon film (8) and an interlayer insulation film (15) for covering the silicon film (8) are formed in this order. Then, a metal film is formed, and metal lines (10, 11) traversing the silicon film (8) are formed by etching the metal film. Then, p-type impurity ions are implanted by using a mask that has an opening (24a) that exposes a portion that overlaps a region where a p-layer (9a) is to be formed, a part of the opening (24a) being formed with the metal line (10). Furthermore, n-type impurity ions are implanted by using a mask that has an opening (25b) that exposes a portion that overlaps a region where an n-layer (9c) is to be formed, a part of the opening (25a) being formed with the metal line (11).
摘要翻译：提供了抑制光电二极管的输出特性的变化的显示装置及其制造方法。显示装置设置有有源矩阵基板（2）和光电二极管（6）。首先，在玻璃基板（12）上依次形成用于覆盖硅膜（8）的硅膜（8）和层间绝缘膜（15）。然后，形成金属膜，通过蚀刻金属膜形成穿过硅膜（8）的金属线（10,11）。然后，通过使用具有露出与形成有p层（9a）的区域重叠的部分的开口（24a）的掩模来注入p型杂质离子，开口部（24a）的一部分与金属线（10）形成。此外，通过使用具有露出与要形成n层（9c）的区域重叠的部分的开口（25b）的掩模来注入n型杂质离子，所述开口（25a）的一部分为与金属线（11）形成。

10. 发明申请

US20080146763A1 Elastic Network Structure 有权
标题翻译：弹性网络结构
公开(公告)号：US20080146763A1
公开(公告)日：2008-06-19
申请号：US11722265
申请日：2005-12-20
申请人： Masaki Yamanaka , Yoshihiro Matsui
发明人： Masaki Yamanaka , Yoshihiro Matsui
IPC分类号： C08F110/02
CPC分类号： D04H13/00 , D04H3/03 , D04H3/05 , Y10T442/601 , Y10T442/69
摘要： Provided is an elastic network structure having durability and cushioning properties suitable for furniture, bedding such as a bed, seats for vehicles, seats for shipping, etc., the network structure being lightweight and having excellent chemical resistance, excellent light resistance, soft repellency, and excellent cushioning characteristics in a low temperature environment. The elastic network structure comprises a three-dimensional random loop bonded structure obtained by forming random loops with curling treatment of a continuous linear structure having not less than 300 decitex, and by making each loop mutually contact in a molten state to weld the majority of contacted part, the continuous linear structure mainly including a low density polyethylene resin with a specific gravity of not more than 0.94 g/cm3.
摘要翻译：本发明提供一种具有耐用性和缓冲性的弹性网状结构，其适用于家具，床上用品，车辆用座椅，运输座椅等，网状结构重量轻，耐化学性优异，耐光性优异，防排斥性，在低温环境下具有优异的缓冲特性。弹性网络结构包括通过形成具有不小于300分特的连续线性结构的卷曲处理的随机环获得的三维随机环接合结构，并且通过使每个环在熔融状态下相互接触以焊接大部分接触部分，连续线性结构主要包括比重不超过0.94g / cm 3的低密度聚乙烯树脂。

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