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1. 发明授权

US08896033B2 Electrochemical transistor 有权
标题翻译：电化学晶体管
公开(公告)号：US08896033B2
公开(公告)日：2014-11-25
申请号：US13816584
申请日：2011-09-08
申请人： Tsuyoshi Hasegawa , Masakazu Aono , Kazuya Terabe , Tohru Tsuruoka , Yaomi Itoh
发明人： Tsuyoshi Hasegawa , Masakazu Aono , Kazuya Terabe , Tohru Tsuruoka , Yaomi Itoh
IPC分类号： G01N27/403 , H01L29/66 , H01L27/148 , H01L45/00 , G11C13/00 , H01L29/78 , G11C13/02
CPC分类号： H01L29/78 , G11C13/0007 , G11C13/0009 , G11C13/0011 , G11C13/02 , G11C14/00 , G11C2213/11 , G11C2213/32 , G11C2213/52 , G11C2213/53 , H01L45/085 , H01L45/1206 , H01L45/1226 , H01L45/1233 , H01L45/1266 , H01L45/146
摘要： The object of the invention is to provide a three-terminal switch (electrochemical transistor) capable of achieving sharp on-off operation.A source electrode and a drain electrode are juxtaposed with an insulator interposed between them, and on the assembly there is an ion diffusion member such as Ta2O5 located. On the opposite surface of the ion diffusion member, there is a gate electrode located that is capable of supplying metal ions such as copper ions. By application of voltage to the gate electrode, the metal ions going out of the gate electrode are reversibly precipitated as metal on both source and drain electrodes as well as on the insulator near them, thereby controlling conduction and non-conduction between the source electrode and the drain electrode.
摘要翻译：本发明的目的是提供一种能够实现尖锐开关操作的三端开关（电化学晶体管）。源电极和漏电极与介于它们之间的绝缘体并置，并且在组件上存在诸如Ta 2 O 5的离子扩散部件。在离子扩散部件的相对表面上，设置能够供给铜离子等金属离子的栅电极。通过向栅电极施加电压，从栅极电极出来的金属离子可以在源电极和漏极两者以及绝缘体附近作为金属可逆地析出，从而控制源电极与源电极之间的导通和非导通漏电极。

2. 发明申请

US20100239821A1 SURFACE ENHANCED INFRARED ABSORPTION SENSOR AND METHOD FOR PRODUCING THE SAME 失效
标题翻译：表面增强的红外吸收传感器及其制造方法
公开(公告)号：US20100239821A1
公开(公告)日：2010-09-23
申请号：US12676723
申请日：2008-09-05
申请人： Tadaaki Nagao , Dominik Enders , Tomonobu Nakayama , Masakazu Aono
发明人： Tadaaki Nagao , Dominik Enders , Tomonobu Nakayama , Masakazu Aono
IPC分类号： B32B3/10 , C23C16/52
CPC分类号： G01N21/35 , B82Y15/00 , B82Y40/00 , G01N21/553 , G01N21/554 , G01N21/658 , Y10T428/24612
摘要： The method for producing a surface enhanced infrared absorption sensor of the invention is characterized by: adsorbing metallic nanoparticles dispersed in a solution on a surface of a substrate, or allowing the adsorbed metallic nanoparticles to be grown in a solution, thereby forming a film; applying infrared light to the substrate from the side thereof opposite to the side on which the metallic nano-thin film is disposed; detecting evanescent waves exuding from the substrate; and regulating a surface enhanced infrared adsorption activity while monitoring surface enhanced infrared adsorption signals in situ, whereby the metallic nano-thin film is grown in the form of flat and discontinuous islands. According to the method, there is provided a production technique for a surface enhanced infrared absorption (SEIRA) sensor having a higher sensitivity and more excellent in the reproducibility.
摘要翻译：本发明的表面增强红外线吸收传感器的制造方法的特征在于，将分散在溶液中的金属纳米粒子吸附在基板的表面，或使吸附的金属纳米粒子在溶液中生长，从而形成膜; 从与设置有金属纳米薄膜的一侧相反的一侧向基板施加红外光; 检测从衬底渗出的ev逝波; 并且在原位监测表面增强的红外吸收信号的同时调节表面增强的红外吸收活性，由此金属纳米薄膜以扁平和不连续岛的形式生长。根据该方法，提供了一种具有更高灵敏度和更优异的再现性的表面增强红外吸收（SEIRA）传感器的生产技术。

3. 发明申请

US20050243844A1 Point contact array, not circuit, and electronic circuit using the same 有权
标题翻译：点触点阵列，不是电路，而电子电路使用相同
公开(公告)号：US20050243844A1
公开(公告)日：2005-11-03
申请号：US11165037
申请日：2005-06-24
申请人： Masakazu Aono , Tsuyoshi Hasegawa , Kazuya Terabe , Tomonobu Nakayama
发明人： Masakazu Aono , Tsuyoshi Hasegawa , Kazuya Terabe , Tomonobu Nakayama
IPC分类号： G11C11/56 , G11C13/02 , G11C16/02 , H01L27/24 , H01L27/28 , H01L29/24 , H01L29/26 , H01L29/45 , H01L51/00 , H01L51/30 , H03K19/02 , H04L12/28 , H04L12/56
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/5614 , G11C13/0004 , G11C13/0009 , G11C13/0011 , G11C2213/77 , G11C2213/81 , H01L27/2463 , H01L29/242 , H01L29/26 , H01L29/45 , H01L45/085 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/146 , H01L45/1633 , H03K17/545 , H03K19/02
摘要： There are provided a point contact array, in which a plurality of point contacts are arranged, each point contact electrically and reversibly controlling conductance between electrodes and being applicable to an arithmetic circuit, a logic circuit, and a memory device, a NOT circuit, and an electronic circuit using the same. A circuit includes a plurality of point contacts each composed of a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. The conductance of each point contact is controlled to realize the circuit. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material. When a semiconductor or insulator material is interposed between the electrodes, a crystal or an amorphous material of GeSx, GeSex, GeTex, or WOx (0
摘要翻译：提供了一种点接触阵列，其中布置有多个点触点，每个点接触电和可逆地控制电极之间的电导并且可应用于运算电路，逻辑电路和存储器件，NOT电路和使用该电路的电子电路。电路包括多个点接点，每个点接触由由具有离子导电性和电子传导性的复合导电材料制成的第一电极和由导电物质制成的第二电极组成。控制每个点接触的电导以实现电路。优选使用Ag 2 S，Ag 2 Se，Cu 2 S或Cu 2 Se作为化合物导电材料。当在电极之间插入半导体或绝缘体材料时，可以使用GeS x X，Ge x O x Ge，GeTe x x，或优选使用WO x（0

4. 发明授权

US06608306B1 Scanning tunneling microscope, its probe, processing method for the probe and production method for fine structure 失效
标题翻译：扫描隧道显微镜，其探头，探针加工方法及精细结构的生产方法
公开(公告)号：US06608306B1
公开(公告)日：2003-08-19
申请号：US09743202
申请日：2001-01-08
申请人： Masakazu Aono , Tomonobu Nakayama , Kazuya Terabe
发明人： Masakazu Aono , Tomonobu Nakayama , Kazuya Terabe
IPC分类号： G01N1312
CPC分类号： B82B3/00 , G01Q60/16 , Y10S977/861 , Y10S977/869 , Y10S977/875 , Y10S977/879
摘要： The invention provides a probe for use with a scanning tunneling microscope, a method of treating the probe, and a method of fabricating a nano-structure, which facilitates formation of a continuous nano-structure. The probe for the scanning tunneling microscope is formed of an Ag2S crystal having both ion conductivity and electron conductivity. Voltage and tunnel current are applied between the probe and a substrate in order to move movable Ag ions to thereby grow, on the tip end of the probe, a projection (mini chip) composed of Ag ions or Ag atoms. The polarity of the applied voltage is reversed after the growth of the projection in order to return the Ag ions or Ag atoms constituting the grown projection (mini chip) into the Ag2S crystal to thereby contract the projection. Thus, the probe can have a projection composed of Ag ions or Ag atoms and a regulated shape. Further, the movable ions or atoms of the mixed-conductive material are transferred onto the substrate so as to form a nano-structure on the substrate.
摘要翻译：本发明提供了一种用于扫描隧道显微镜的探针，一种处理该探针的方法，以及一种有助于形成连续纳米结构的纳米结构的制造方法。用于扫描隧道显微镜的探针由具有离子传导性和电子传导性的Ag 2 S晶体形成。电压和隧道电流施加在探针和衬底之间，以移动可移动的Ag离子，从而在探针的尖端上生长由Ag离子或Ag原子组成的突起（微型芯片）。在投影生长之后，施加电压的极性反转，以将构成生长的突起（微型芯片）的Ag离子或Ag原子返回到Ag2S晶体中，从而使投影收缩。因此，探针可以具有由Ag离子或Ag原子组成的突起和调节形状。此外，将混合导电材料的可移动离子或原子转移到衬底上，以在衬底上形成纳米结构。

5. 发明授权

US06448554B1 Ion scattering spectrometer 失效
标题翻译：离子散射光谱仪
公开(公告)号：US06448554B1
公开(公告)日：2002-09-10
申请号：US09321853
申请日：1999-05-28
申请人： Masakazu Aono , Takane Kobayashi
发明人： Masakazu Aono , Takane Kobayashi
IPC分类号： H01J37252
CPC分类号： H01J49/40
摘要： From an ion source and accelerator an ion beam is generated, this ion beam is let go through a circular hole bored in the center of a detector and orifices to irradiate a sample in a sample chamber. The detector detects particles scattered from the sample and arrived at the detector through the orifices. With exhaust units and orifices, the region surrounding the detector is exhausted to be a prescribed degree of vacuum of higher vacuum than the inside of the sample chamber.
摘要翻译：从离子源和加速器产生离子束，该离子束通过在检测器中心钻孔的孔，并且孔口照射样品室中的样品。检测器检测从样品散射的颗粒，并通过孔抵达检测器。利用排气单元和孔口，检测器周围的区域被排出为比样品室内部更高真空度的规定的真空度。

6. 发明授权

US5808311A Method for detecting displacement of atoms on material surface and method for local supply of heteroatoms 失效
标题翻译：用于检测材料表面上原子的位移的方法和用于局部供应杂原子的方法
公开(公告)号：US5808311A
公开(公告)日：1998-09-15
申请号：US491484
申请日：1995-06-16
申请人： Masakazu Aono , Francois Grey , Ataru Kobayashi , Eric Snyder , Hironaga Uchida , Dehuan Huang , Hiromi Kuramochi
发明人： Masakazu Aono , Francois Grey , Ataru Kobayashi , Eric Snyder , Hironaga Uchida , Dehuan Huang , Hiromi Kuramochi
IPC分类号： G01Q60/00 , B82B3/00 , G01B7/00 , G01B7/34 , H01J37/30
CPC分类号： B82B3/00 , B82Y30/00 , B82Y40/00 , G01B7/00 , G01Q80/00 , Y10S977/857
摘要： Atomic displacement on a material surface is detected by, in a system comprising the tip of a scanning tunneling microscope (STM) and a material in question, upon an atomic displacement operation comprising extraction of atoms on the material surface and adsorption of atoms onto the material surface through application of a pulse voltage to the tip of STM, measuring a z-piezo voltage along the time series during and after application of the pulse voltage. Furthermore, heteroatoms dissociated by a reaction between the tip surface of STM and heteromolecules in a heteromolecular atmosphere are stored on the surface of the tip of STM, and then, heteroatoms are locally adsorbed onto the material surface by causing electro-evaporation of the heteroatoms through application of a prescribed scanning voltage to the tip of STM.
摘要翻译：在包括扫描隧道显微镜（STM）的尖端的系统和所讨论的材料的系统中，在材料表面上提取原子并将原子吸附到材料上的原子位移操作时，材料表面上的原子位移被检测到通过对STM的尖端施加脉冲电压来表面，在施加脉冲电压期间和之后沿着时间序列测量z压电电压。此外，通过STM的尖端表面和异种分子之间的反应离解的杂原子存储在STM的尖端的表面上，然后通过使杂原子的电蒸发通过，将杂原子局部吸附到材料表面上对STM尖端施加规定的扫描电压。

7. 发明授权

US5187327A Superconducting magnetic shield 失效
标题翻译：超导磁屏蔽
公开(公告)号：US5187327A
公开(公告)日：1993-02-16
申请号：US588337
申请日：1990-09-26
申请人： Hiroshi Ohta , Masakazu Aono , Kazuhiko Kato , Kazutomo Hoshino , Hidefusa Takahara , Tomonobu Nakayama , Eiichi Sudoh
发明人： Hiroshi Ohta , Masakazu Aono , Kazuhiko Kato , Kazutomo Hoshino , Hidefusa Takahara , Tomonobu Nakayama , Eiichi Sudoh
IPC分类号： H05K9/00
CPC分类号： H05K9/0077 , Y10S505/782 , Y10S505/845
摘要： This invention provides a superconducting magnetic shield and a magnetic shielding apparatus including the same, thereby accurately measuring an extremely weak magnetic field such as magnetoencephalographic waves by reducing the influence of magnetic field of the earth or magnetic noises.

8. 发明申请

US20100281587A1 OPTICAL ELECTRIC FIELD ENHANCEMENT ELEMENT AND PROBE USING THE SAME 有权
标题翻译：光电增强元件和使用它的探头
公开(公告)号：US20100281587A1
公开(公告)日：2010-11-04
申请号：US12739596
申请日：2008-10-24
申请人： Yoshitaka Shingaya , Tomonobu Nakayama , Masakazu Aono
发明人： Yoshitaka Shingaya , Tomonobu Nakayama , Masakazu Aono
IPC分类号： G01Q70/18 , G01J3/44
CPC分类号： G01N21/658
摘要： The optical electric field enhancement element of the invention comprises a nanorod where a conductive layer and an insulating layer are laminated. In particular, the optical electric field enhancement element comprising a tungsten oxide nanorod exhibits a high enhancement effect not by an aggregate of fine crystals but by the crystal structure itself, therefore securing good reproducibility and a stable Raman scattering enhancement effect. A sensor comprising the optical electric field enhancement element enables various high-precision analyses heretofore impossible in the art.
摘要翻译：本发明的光电场增强元件包括层叠导电层和绝缘层的纳米棒。特别地，包含氧化钨纳米棒的光电场增强元件不是通过细晶体的集合而是通过晶体结构本身具有高增强效果，因此确保了良好的再现性和稳定的拉曼散射增强效果。包括光学电场增强元件的传感器能够实现迄今为止在本领域中不可能的各种高精度分析。

9. 发明授权

US07770232B2 Scanning probe microscope system 有权
标题翻译：扫描探针显微镜系统
公开(公告)号：US07770232B2
公开(公告)日：2010-08-03
申请号：US11887276
申请日：2006-03-16
申请人： Akira Saito , Masakazu Aono , Yuji Kuwahara , Jyunpei Maruyama , Ken Manabe
发明人： Akira Saito , Masakazu Aono , Yuji Kuwahara , Jyunpei Maruyama , Ken Manabe
IPC分类号： G01Q30/02
CPC分类号： G01N23/225 , G01Q30/02 , G01Q60/12
摘要： A scanning probe microscope system capable of identifying an element with atomic scale spatial resolution comprises: an X-ray irradiation means for irradiating a measurement object with high-brilliance monochromatic X-rays having a beam diameter smaller than 1 mm; a probe arranged to oppose to the measurement object; a processing means for detecting and processing a tunneling current through the probe; and a scanning probe microscope having an alignment means for relatively moving the measurement object, the probe, and the incident position of the high-brilliance monochromatic X-rays to the measurement object.
摘要翻译：能够识别具有原子尺度空间分辨率的元件的扫描探针显微镜系统包括：X射线照射装置，用于用光束直径小于1mm的高亮度单色X射线照射测量对象; 设置成与测量对象相对的探针; 用于检测和处理穿过探针的隧穿电流的处理装置; 以及扫描探针显微镜，具有用于将测量对象，探针和高亮度单色X射线的入射位置相对移动到测量对象的对准装置。

10. 发明授权

US07473982B2 Point contact array, not circuit, and electronic circuit comprising the same 有权
标题翻译：点接触阵列，不是电路和包括它的电子电路
公开(公告)号：US07473982B2
公开(公告)日：2009-01-06
申请号：US10918360
申请日：2004-08-16
申请人： Masakazu Aono , Tsuyoshi Hasegawa , Kazuya Terabe , Tomonobu Nakayama
发明人： Masakazu Aono , Tsuyoshi Hasegawa , Kazuya Terabe , Tomonobu Nakayama
IPC分类号： H01L27/24
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/5614 , G11C13/0004 , G11C13/0009 , G11C13/0011 , G11C2213/77 , G11C2213/81 , H01L27/2463 , H01L29/242 , H01L29/26 , H01L29/45 , H01L45/085 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/146 , H01L45/1633 , H03K17/545 , H03K19/02
摘要： A NOT circuit realized using an atomic switch serving as a two terminal device and including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material.
摘要翻译：使用用作双端子器件的原子开关实现的NOT电路，并且包括由具有离子导电性和电子导电性的复合导电材料制成的第一电极和由导电物质制成的第二电极。 Ag2S，Ag2Se，Cu2S或Cu2Se优选用作复合导电材料。

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