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    • 4. 发明授权
    • Method of fabricating semiconductor device having element isolation trench
    • 制造具有元件隔离沟槽的半导体器件的方法
    • US06613635B2
    • 2003-09-02
    • US10015756
    • 2001-12-17
    • Masahiro OdaKazuhiro Sasada
    • Masahiro OdaKazuhiro Sasada
    • H01L21336
    • H01L21/823878H01L21/76237H01L21/823807
    • Threshold voltage fluctuation in upper corner portions of a trench isolation is inhibited by rounding upper corner portions of the trench by thermal oxidation, introducing a first impurity into both upper corner portions of the trench and heat-treating the semiconductor substrate. Embodiments include increasing the threshold voltage in the upper corner portion of the trench in an n-channel transistor, previously increased by rounding oxidation, and introducing a p-type impurity, thereby canceling the threshold voltage reduction resulting from diffusion of the impurity during heat-treating the semiconductor substrate. In a p-channel transistor, the threshold voltage in the upper corner portion of the trench is increased by rounding oxidation thereby canceling the threshold voltage reduction resulting from introduction of the p-type first impurity into both upper corner portions of the trench.
    • 沟槽隔离的上角部的阈值电压波动通过热氧化对沟槽的上角部进行四舍五入,将第一杂质引入槽的两个上角部并对半导体衬底进行热处理来抑制。 实施例包括增加先前通过四舍五入氧化增加的n沟道晶体管中的沟槽的上角部分中的阈值电压,以及引入p型杂质,从而消除由于杂质在热处理期间的扩散而引起的阈值电压降低, 处理半导体衬底。 在p沟道晶体管中,通过舍入氧化来增加沟槽上角部分中的阈值电压,从而抵消由于将p型第一杂质引入沟槽的两个上角部而导致的阈值电压降低。
    • 7. 发明申请
    • IMAGING DEVICE
    • 成像装置
    • US20080024636A1
    • 2008-01-31
    • US11782220
    • 2007-07-24
    • Masahiro ODA
    • Masahiro ODA
    • H04N5/335
    • H01L27/14643H01L27/14609H04N5/37452
    • An imaging device includes a storage portion of carriers, a multiplier section having a multiplier electrode multiplying carriers, a holding portion of the carriers and a readout electrode of carriers, wherein the multiplier electrode is set to an OFF-state potential and carriers are transferred to the holding portion after the potential of the readout electrode is set to an ON-state potential, and the ON-state potential of the readout electrode is maintained at least until a signal corresponding to the carriers transferred to the holding portion is read.
    • 一种成像装置,包括载体的存储部分,具有乘法器电极乘法器的乘法器部分,载体的保持部分和载体的读出电极,其中乘法器电极被设置为截止状态电位,载流子转移到 在读出电极的电位之后的保持部分被设定为导通状态电位,读出电极的导通状态电位至少保持到读取与传送到保持部分的载流子对应的信号为止。
    • 9. 发明申请
    • Solid-state image sensor
    • 固态图像传感器
    • US20060081888A1
    • 2006-04-20
    • US11229760
    • 2005-09-20
    • Masahiro Oda
    • Masahiro Oda
    • H01L29/768
    • H01L27/14812H01L27/1463H01L27/14656
    • A solid-state image sensor capable of suppressing mixture of charge between adjacent charge transfer paths (charge transfer regions), and suppressing reduction of a transfer efficiency of charge is provided. In the solid-state image sensor, the charge transfer region includes a first region with a first channel width, and a second region with a second channel width smaller than the first channel width. A boundary part of the charge transfer region between the first region with the first channel width and the second region with the second channel width is located in a region between two transfer electrodes adjacent to each other.
    • 提供能够抑制相邻的电荷转移路径(电荷转移区域)之间的电荷混合并抑制电荷转移效率的降低的固态图像传感器。 在固态图像传感器中,电荷转移区域包括具有第一沟道宽度的第一区域和具有小于第一沟道宽度的第二沟道宽度的第二区域。 在具有第一沟道宽度的第一区域和具有第二沟道宽度的第二区域之间的电荷转移区域的边界部分位于彼此相邻的两个转移电极之间的区域中。
    • 10. 发明申请
    • Image sensing device employing CCD pixel compression technique and method for driving the same
    • 采用CCD像素压缩技术的图像感测装置及其驱动方法
    • US20050206758A1
    • 2005-09-22
    • US11074667
    • 2005-03-09
    • Takayuki KaidaMasahiro Oda
    • Takayuki KaidaMasahiro Oda
    • H01L27/14H01L27/148H04N3/14H04N5/225H04N5/335
    • H04N5/372H01L27/1485H04N5/3454H04N5/347
    • A conventional image sensing device allowed significant amounts of unwanted electrons to flow upon pixel mixture, thereby providing a low transfer efficiency. An image sensing device has an image sensing section in which multiple light-receiving pixels for converting incident light into information charge for storage during an image sensing period are disposed in rows and columns in a light-receiving region on a semiconductor substrate. A storage section temporarily stores information charge that has been vertically transferred from the image sensing section. A horizontal transfer section vertically transfers row by row the information charges accumulated in the storage section. A driving section provides vertical transfer control. The driving section provides control such that information charge in any of the multiple light-receiving pixels included in the image sensing section is dumped to the semiconductor substrate over an entire image sensing period and pixels are mixed in two or more light-receiving pixels during charge transfer.
    • 常规的图像感测装置允许大量不想要的电子流过像素混合物,从而提供低的转印效率。 图像感测装置具有图像感测部分,其中在半导体衬底的受光区域中以行和列的方式将入射光转换成用于在图像感测期间存储的信息电荷的多个光接收像素。 存储部临时存储从摄像部垂直传送的信息电荷。 水平传送部分逐行垂直地传送在存储部分中累积的信息电荷。 驱动部分提供垂直传输控制。 驱动部提供控制,使得包括在图像感测部分中的多个光接收像素中的任一个中的信息电荷在整个图像感测时段被转储到半导体衬底,并且在充电期间将像素混合在两个或更多个光接收像素中 转让。