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    • 4. 发明授权
    • Semiconductor thyristor switching device and power converter using same
    • 半导体晶闸管开关器件和功率转换器使用相同
    • US5831293A
    • 1998-11-03
    • US709451
    • 1996-09-06
    • Tetsuo MizoguchiMasahiro NagasuHideo KobayashiTsutomu Yatsuo
    • Tetsuo MizoguchiMasahiro NagasuHideo KobayashiTsutomu Yatsuo
    • H01L29/744H01L29/74H01L31/111
    • H01L29/744
    • There is provided a semiconductor substrate which includes a pair of main surfaces, a first semiconductor layer of a first conductivity type adjacent to one of the main surface, a second semiconductor layer of a second conducting type of which impurity concentration is lower than that of the first semiconductor layer and which is adjacent to the first semiconductivity, a third semiconductor layer of the first conductivity type adjacent to the second semiconductor, and a fourth semiconductor of the second conductivity type of which impurity concentration is higher than that of the third semiconductor and which is adjacent to the other of the main surfaces and the third semiconductor. The device further includes one main electrode in ohmic-contact with the first semiconductor layer on one of the main surfaces of said semiconductor substrate, the other main electrode in ohmic-contact with the first semiconductor layer on the other of the main surfaces of said semiconductor substrate, and a control electrode connected electrically to the third semiconductor layer. The total amount of impurities of said third semiconductor layer is less than 10.sup.14 cm.sup.-2.
    • 提供了一种半导体衬底,其包括一对主表面,与主表面之一相邻的第一导电类型的第一半导体层,杂质浓度低于第二导电类型的第二导电类型的第二半导体层 第一半导体层,其与第一半导体层相邻,第一导电类型与第二半导体相邻的第三半导体层以及杂质浓度高于第三半导体的第二导电类型的第四半导体, 与另一个主表面和第三半导体相邻。 所述器件还包括与所述半导体衬底的一个主表面上的第一半导体层欧姆接触的一个主电极,与所述半导体衬底的另一主表面上的第一半导体层欧姆接触的另一个主电极 基板和与第三半导体层电连接的控制电极。 所述第三半导体层的杂质总量小于1014cm-2。