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1. 发明授权

US08102059B2 Interconnect structure for high frequency signal transmissions 失效
标题翻译：高频信号传输的互连结构
公开(公告)号：US08102059B2
公开(公告)日：2012-01-24
申请号：US12402018
申请日：2009-03-11
申请人： Masahiro Inohara
发明人： Masahiro Inohara
IPC分类号： H01L23/535
CPC分类号： H01L23/5283 , H01L23/5226 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/14 , H01L2924/1903 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/00
摘要： A higher aspect ratio for upper level metal interconnects is described for use in higher frequency circuits. Because the skin effect reduces the effective cross-sectional area of conductors at higher frequencies, various approaches are described to reduce the effective RC delay in interconnects.
摘要翻译：上级金属互连的高宽比被描述为用于较高频率电路。因为皮肤效应会降低导体在较高频率下的有效横截面积，所以描述了各种方法来减少互连中的有效RC延迟。

2. 发明授权

US07325225B2 Method and apparatus for reducing OPC model errors 失效
标题翻译：减少OPC模型误差的方法和装置
公开(公告)号：US07325225B2
公开(公告)日：2008-01-29
申请号：US11243933
申请日：2005-10-05
申请人： Yasushi Tanaka , Masahiro Inohara , Matthew Angyal
发明人： Yasushi Tanaka , Masahiro Inohara , Matthew Angyal
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F1/68
摘要： It is important to assess and reduce errors that arise in mask correction techniques such as optical proximity correction. A preliminary mask is obtained using an OPC model. An etched wafer is created from the preliminary mask using lithography, and first and second critical dimensions (CD) are measured on the wafer and. An edge placement error (EPE) is determined that corresponds to a difference between a measured value and a desired value of the second CD. These steps are repeated for a plurality of different values of the first CD, and of for each of the values of, the measured value of the second CD is correlated with its corresponding value on the mask as predicted by the OPC model. Δ difference ΔCD is obtained between the difference of the mask CDs calculated by interpolation of wafer CD measurements and by OPC model predictions and is transformed into an OPC model error.
摘要翻译：重要的是评估和减少在诸如光学邻近校正的掩模校正技术中出现的错误。使用OPC模型获得初步掩模。使用光刻从初步掩模创建蚀刻的晶片，并且在晶片上测量第一和第二临界尺寸（CD）。确定对应于测量值和第二CD的期望值之间的差的边缘放置误差（EPE）。对于第一CD的多个不同值重复这些步骤，并且对于每个值，第二CD的测量值与由OPC模型预测的掩模上的对应值相关。在通过晶片CD测量的插值和OPC模型预测计算出的掩模CD的差异之间获得差值DeltaCD，并将其转换为OPC模型误差。

3. 发明授权

US08970048B2 Interconnect structure for high frequency signal transmissions 有权
标题翻译：高频信号传输的互连结构
公开(公告)号：US08970048B2
公开(公告)日：2015-03-03
申请号：US13340764
申请日：2011-12-30
申请人： Masahiro Inohara
发明人： Masahiro Inohara
IPC分类号： H01L23/535 , H01L23/528 , H01L23/522 , H01L23/66
CPC分类号： H01L23/5283 , H01L23/5226 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/14 , H01L2924/1903 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/00
摘要： A higher aspect ratio for upper level metal interconnects is described for use in higher frequency circuits. Because the skin effect reduces the effective cross-sectional area of conductors at higher frequencies, various approaches are described to reduce the effective RC delay in interconnects.
摘要翻译：上级金属互连的高宽比被描述为用于较高频率电路。因为皮肤效应会降低导体在较高频率下的有效横截面积，所以描述了各种方法来减少互连中的有效RC延迟。

4. 发明申请

US20120178898A1 POLYARYLENE SULFIDE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：聚亚烷基硫化物及其制备方法
公开(公告)号：US20120178898A1
公开(公告)日：2012-07-12
申请号：US13391952
申请日：2010-08-26
申请人： Takeshi Unohara , Hiroyuki Isago , Toru Nishimura , Masahiro Inohara
发明人： Takeshi Unohara , Hiroyuki Isago , Toru Nishimura , Masahiro Inohara
IPC分类号： C08G75/14
CPC分类号： C08G75/025 , C08G75/0213 , C08G75/0259
摘要： A method is provided for producing a polyarylene sulfide by reacting a sulfidizing agent with a dihalogenated aromatic compound in an organic polar solvent in the presence of an alkali metal hydroxide, the method includes : carrying out the reaction in such a manner that the polymerization time in a temperature range of 230° C. to less than 245° C. (T1a) is not less than 30 minutes and less than 3.5 hours and that the conversion ratio of the dihalogenated aromatic compound at the end of the step is 70 to 98 mol. % and : carrying out the reaction in such a manner that the polymerization time in a temperature range of 245° C. to less than 280° C. (T2) is not less than 5 minutes and less than 1 hour.
摘要翻译：提供一种通过在碱金属氢氧化物的存在下使有机极性溶剂中的二硫化剂与二卤化芳香族化合物反应来制造聚芳硫醚的方法，该方法包括<步骤1>：以下述方式进行反应：在230℃至小于245℃的温度范围内的聚合时间（T1a）不小于30分钟且小于3.5小时，并且步骤结束时的二卤代芳族化合物的转化率为 70〜98mol。％和<步骤2>：以245℃至小于280℃（T2）的温度范围内的聚合时间不低于5分钟并小于1小时进行反应。

5. 发明申请

US20120104576A1 INTERCONNECT STRUCTURE FOR HIGH FREQUENCY SIGNAL TRANSMISSIONS 审中-公开
标题翻译：高频信号传输互连结构
公开(公告)号：US20120104576A1
公开(公告)日：2012-05-03
申请号：US13340764
申请日：2011-12-30
申请人： Masahiro INOHARA
发明人： Masahiro INOHARA
IPC分类号： H01L23/48
CPC分类号： H01L23/5283 , H01L23/5226 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/14 , H01L2924/1903 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/00
摘要： A higher aspect ratio for upper level metal interconnects is described for use in higher frequency circuits. Because the skin effect reduces the effective cross-sectional area of conductors at higher frequencies, various approaches are described to reduce the effective RC delay in interconnects.
摘要翻译：上级金属互连的高宽比被描述为用于较高频率电路。因为皮肤效应会降低导体在较高频率下的有效横截面积，所以描述了各种方法来减少互连中的有效RC延迟。

6. 发明申请

US20120068179A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120068179A1
公开(公告)日：2012-03-22
申请号：US13051524
申请日：2011-03-18
申请人： Tatsuya Ishida , Masahiro Inohara
发明人： Tatsuya Ishida , Masahiro Inohara
IPC分类号： H01L29/786 , H01L21/768
CPC分类号： H01L29/458 , H01L27/0688 , H01L27/124
摘要： According to embodiments, there is provided a semiconductor device, including: a logic circuit; an interlayer insulating film formed above the logic circuit; an amorphous silicon layer including: a non-silicide layer formed on the interlayer insulating film; and a silicide layer formed on the non-silicide layer; a TFT formed on the amorphous silicon layer; and a contact plug formed to plug a through hole penetrating the interlayer insulating film, the contact plug being electrically connected to the logic circuit, an upper part of the contact plug being connected to the silicide layer.
摘要翻译：根据实施例，提供一种半导体器件，包括：逻辑电路; 形成在逻辑电路上方的层间绝缘膜; 非晶硅层，包括：在所述层间绝缘膜上形成的非硅化物层; 以及形成在所述非硅化物层上的硅化物层; 形成在非晶硅层上的TFT; 以及接触插塞，其形成为插入穿过所述层间绝缘膜的通孔，所述接触插塞电连接到所述逻辑电路，所述接触插塞的上部连接到所述硅化物层。

7. 发明授权

US07994641B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07994641B2
公开(公告)日：2011-08-09
申请号：US12492167
申请日：2009-06-26
申请人： Masahiro Inohara
发明人： Masahiro Inohara
IPC分类号： H01L29/72
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor device according to one embodiment includes: a substrate having an element region where a semiconductor element is formed; a via hole formed in a portion of the substrate adjacent to the element region; a conducting portion provided in the via hole via an insulating layer; and a buffer layer provided between the substrate and the insulating layer, wherein the buffer layer is made of a material in which a difference in thermal expansion coefficient between the substrate and the buffer layer is smaller than that between the substrate and the insulating layer.
摘要翻译：根据一个实施例的半导体器件包括：具有形成半导体元件的元件区域的衬底; 形成在所述基板的与所述元件区域相邻的部分中的通孔; 导电部，其经由绝缘层设置在所述通孔中; 以及设置在所述基板和所述绝缘层之间的缓冲层，其中所述缓冲层由所述基板和所述缓冲层之间的热膨胀系数的差小于所述基板和所述绝缘层之间的热膨胀系数的差异的材料制成。

8. 发明申请

US20100006990A1 INTERCONNECT STRUCTURE FOR HIGH FREQUENCY SIGNAL TRANSMISSIONS 失效
标题翻译：高频信号传输互连结构
公开(公告)号：US20100006990A1
公开(公告)日：2010-01-14
申请号：US12402018
申请日：2009-03-11
申请人： Masahiro Inohara
发明人： Masahiro Inohara
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L23/5283 , H01L23/5226 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/14 , H01L2924/1903 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/00
摘要： A higher aspect ratio for upper level metal interconnects is described for use in higher frequency circuits. Because the skin effect reduces the effective cross-sectional area of conductors at higher frequencies, various approaches are described to reduce the effective RC delay in interconnects.
摘要翻译：上级金属互连的高宽比被描述为用于较高频率电路。因为皮肤效应会降低导体在较高频率下的有效横截面积，所以描述了各种方法来减少互连中的有效RC延迟。

9. 发明申请

US20080122038A1 GUARD RING STRUCTURE WITH METALLIC MATERIALS 审中-公开
标题翻译：带金属材料的护环结构
公开(公告)号：US20080122038A1
公开(公告)日：2008-05-29
申请号：US11532243
申请日：2006-09-15
申请人： Masahiro INOHARA
发明人： Masahiro INOHARA
IPC分类号： H01L23/00 , H01L21/76
CPC分类号： H01L23/585 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device and a method for making the semiconductor device having a guard ring formed by a trench filled with a metallic material is described. Using the trench, crack and moisture propagation may be eliminated or prevented from propagating from a dicing area to an active circuit area of a chip.
摘要翻译：描述了一种用于制造具有由填充有金属材料的沟槽形成的保护环的半导体器件的半导体器件和方法。使用沟槽，可以消除或防止裂纹和水分传播从切片区域传播到芯片的有源电路区域。

10. 发明授权

US07045415B2 MIM capacitor having flat diffusion prevention films 失效
标题翻译：具有平坦扩散防止膜的MIM电容器
公开(公告)号：US07045415B2
公开(公告)日：2006-05-16
申请号：US10902579
申请日：2004-07-30
申请人： Takashi Yoshitomi , Tatsuya Ohguro , Ryoji Hasumi , Hideki Kimijima , Takashi Yamaguchi , Masahiro Inohara
发明人： Takashi Yoshitomi , Tatsuya Ohguro , Ryoji Hasumi , Hideki Kimijima , Takashi Yamaguchi , Masahiro Inohara
IPC分类号： H01L21/8242
CPC分类号： H01L28/60 , H01L27/0629 , H01L27/0805
摘要： At present, Cu (copper) is being used as a wiring material. In an RF-CMOS device as a combination of an RF analog device and CMOS logic device, two electrodes of a MIM capacitor are formed from Cu having a large diffusion coefficient. To prevent Cu from diffusing to the capacitor insulating film of the MIM capacitor, diffusion prevention films having a function of preventing diffusion of Cu are interposed between the capacitor insulating film and the two electrodes. As a result, Cu forming the electrodes does not diffuse to the capacitor insulating film.
摘要翻译：目前，Cu（铜）被用作布线材料。在作为RF模拟装置和CMOS逻辑装置的组合的RF-CMOS装置中，MIM电容器的两个电极由具有大扩散系数的Cu形成。为了防止Cu向MIM电容器的电容器绝缘膜扩散，具有防止扩散的功能的扩散防止膜插入在电容器绝缘膜和两个电极之间。结果，形成电极的Cu不扩散到电容器绝缘膜。

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