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    • 1. 发明申请
    • Optical detector and method of producing an arrangement of multiple semiconductor layers
    • 光学检测器和制造多个半导体层的布置的方法
    • US20060091491A1
    • 2006-05-04
    • US11273427
    • 2005-11-14
    • Gerd MuehlnikelKlaus HircheMartin Warth
    • Gerd MuehlnikelKlaus HircheMartin Warth
    • H01L31/105H01L21/00
    • H01L31/18H01L31/02162H01L31/1035
    • An optical detector with an arrangement of several semiconductor layers has at least one zone absorbing in a predetermined wavelength region, at least one zone which is at least partially light-permeable in the predetermined wavelength region, one semiconductor layer which is absorbing in the predetermined wavelength region, a semiconductor layer which is located under the first mentioned semiconductor layer and is at least partially light-permeable in the predetermined wavelength region, the at least one light-permeable zone is formed as an interruption in the absorbing semiconductor layer, and a throughgoing doping provided on an upper surface of the absorbing semiconductor layer which surrounds the interruption and at least a part of an upper surface of the at least partially light-permeable semiconductor layer, wherein, the optical detector is produced by a new method and used for various applications.
    • 具有多个半导体层的布置的光学检测器具有在预定波长区域中吸收的至少一个区域,在预定波长区域中至少部分透光的至少一个区域,以预定波长吸收的一个半导体层 区域,位于第一提到的半导体层下方并且在预定波长区域中至少部分透光的半导体层,所述至少一个透光区形成为吸收半导体层中的中断,并且通过 提供在吸收半导体层的围绕中断的上表面上的掺杂和至少部分透光的半导体层的上表面的至少一部分,其中,光学检测器通过新的方法制造并用于各种 应用程序。
    • 3. 发明授权
    • Acceleration and vibration sensor and method of making the same
    • 加速和振动传感器及其制作方法
    • US5151763A
    • 1992-09-29
    • US631623
    • 1990-12-21
    • Jiri MarekFrank BantienDietmar HaackMartin Warth
    • Jiri MarekFrank BantienDietmar HaackMartin Warth
    • G01H11/06G01P15/08G01P15/125H01L21/822H01L27/04H01L29/84H04R19/00
    • G01P15/125G01H11/06G01P15/0802G01P2015/0814H04R19/005
    • A semiconductor plate having an epitaxial layer of a conductivity type opposite to that of the substrate on which it is formed has a depression, including one or more elongate channels. The depression is etched into a depth passing entirely through the epitaxial layer to isolate at least one tongue extending from a tongue pedestal into the etched depression and having parallel major sides which are perpendicular to the principal planes of the semiconductor plate. The tongue is under-etched so that it will be free to vibrate by motion in directions parallel to the principal planes of the plate. One of the major sides of the tongue faces a stationary electrode across a gap and the electrode and the tongue are insulated from each other, at least in one embodiment, by the fact that the etched depression extends all the way through the epitaxial layer in its depth. Deflection or vibration of the tongue changes the capacitance between the electrode and the tongue and contacts are provided for measuring the capacitance. Various embodiments utilizing multiple tongues and one or more electrodes are shown.
    • 具有与形成有外延层的基板的导电类型相反的外延层的半导体板具有包括一个或多个细长沟道的凹陷部。 将凹陷蚀刻到完全穿过外延层的深度中,以将至少一个从舌基座延伸的舌片隔离成蚀刻的凹陷部,并且具有垂直于半导体板的主平面的平行的主边。 舌头被低蚀刻,使得它可以通过平行于板的主平面的方向的运动而自由振动。 至少在一个实施例中,舌片的主要侧面之一跨越间隙固定电极,并且电极和舌片彼此绝缘,因为蚀刻的凹陷一直延伸穿过外延层的事实 深度。 舌头的偏转或振动会改变电极和舌头之间的电容,并提供触点用于测量电容。 示出了利用多个舌片和一个或多个电极的各种实施例。