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1. 发明授权

US5300895A Method for terminating harmonics of transistors 失效
标题翻译：终止晶体管谐波的方法
公开(公告)号：US5300895A
公开(公告)日：1994-04-05
申请号：US955527
申请日：1992-10-01
申请人： Martin E. Jones
发明人： Martin E. Jones
IPC分类号： H03F3/191 , H03F3/193
CPC分类号： H03F3/191
摘要： Generally, and in one form of the invention, a method is disclosed for terminating third harmonic frequency of a transistor amplifier comprising: determining the magnitude of the susceptance at the third harmonic frequency of initial circuitry, 41, 43, and 45, attached to the output of a transistor 39, wherein the initial circuitry has no third harmonic termination; determining whether the susceptance of the circuitry presented to the output of the transistor 39 is capacitive or inductive at the third harmonic frequency; and adding a compensating parallel susceptance 60 to the output of the transistor 39 that is substantially equal in magnitude to the susceptance of the circuitry attached to the output of the transistor 39, but capacitive if the susceptance of the circuitry presented to the output of the transistor 39 is inductive, or inductive if the susceptance presented to the output of the transistor 39 is capacitive, whereby the imaginary part of the susceptance of the total circuitry attached to the output of the transistor 39 is made small at the third harmonic frequency.
摘要翻译：通常，在本发明的一种形式中，公开了一种用于终止晶体管放大器的三次谐波频率的方法，包括：确定初始电路41,43和45的三次谐波频率处的电纳的大小，晶体管39的输出，其中初始电路没有三次谐波终止; 确定呈现给晶体管39的输出的电路的电纳是否为三次谐波频率处的电容或电感; 并且将补偿并联电纳60添加到晶体管39的输出端，该输出在大小上等于连接到晶体管39的输出的电路的电感，但是如果电路的电纳呈现给晶体管的输出如果提供给晶体管39的输出的电纳是电容性的，则39是感性的，或者是感应的，由此，附加到晶体管39的输出的总电路的电纳的虚部在三次谐波频率处变小。

2. 发明授权

US08754496B2 Field effect transistor having a plurality of field plates 有权
标题翻译：场效应晶体管具有多个场板
公开(公告)号：US08754496B2
公开(公告)日：2014-06-17
申请号：US12423776
申请日：2009-04-14
申请人： Hua-Quen Tserng , Deep C. Dumka , Martin E. Jones , Charles F. Campbell , Anthony M. Balistreri
发明人： Hua-Quen Tserng , Deep C. Dumka , Martin E. Jones , Charles F. Campbell , Anthony M. Balistreri
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/404
摘要： Embodiments include but are not limited to apparatuses and systems including a field-effect transistor switch. A field-effect transistor switch may include a first field plate coupled with a gate electrode, the first field plate disposed substantially equidistant from a source electrode and a drain electrode. The field-effect transistor switch may also include a second field plate proximately disposed to the first field plate and disposed substantially equidistant from the source electrode and the drain electrode. The first and second field plates may be configured to reduce an electric field between the source electrode and the gate electrode and between the drain electrode and the gate electrode.
摘要翻译：实施例包括但不限于包括场效应晶体管开关的装置和系统。场效应晶体管开关可以包括与栅电极耦合的第一场板，第一场板基本上与源电极和漏电极等距离设置。场效应晶体管开关还可以包括靠近第一场板并且与源电极和漏电极基本上等距离设置的第二场板。第一和第二场板可以被配置为减小源电极和栅电极之间以及漏电极和栅电极之间的电场。

3. 发明授权

US5268649A Bias circuit for bipolar transistors 失效
标题翻译：双极晶体管的偏置电路
公开(公告)号：US5268649A
公开(公告)日：1993-12-07
申请号：US924276
申请日：1992-08-03
申请人： Martin E. Jones
发明人： Martin E. Jones
IPC分类号： H03F1/02 , H03F1/52 , H03F3/04
CPC分类号： H03F1/52 , H03F1/0261
摘要： Generally, and in one form of the invention, a bias circuit for a transistor amplifier comprising a nonlinear element which limits current flow in a transistor, whereby the output-signal amplitude of the transistor is limited and the transistor is protected from exceeding a maximum current level, is disclosed. In another form of the invention, a bias circuit for a transistor amplifier comprising a nonlinear element 44 which limits current flow through a base terminal of a bipolar transistor 48, whereby the output-signal amplitude of the bipolar transistor 48 is limited and current flow through a collector or an emitter terminal of the transistor 48 is prevented from exceeding a maximum safe level, is disclosed. In still another form of the invention, an amplifier comprising an amplifying transistor 48 and a bias circuit, wherein the bias circuit comprises a nonlinear element 44 which limits current flow through a base terminal of a bipolar transistor 48, whereby the output-signal amplitude of the amplifier is limited and current flow through a collector or an emitter terminal of the amplifying transistor 48 is prevented from exceeding a maximum safe level, is disclosed. In yet another form of the invention, an oscillator circuit comprising an oscillator 92 and an amplifier 94, wherein the amplifier comprises an amplifying transistor and a bias circuit, and wherein the bias circuit comprises a nonlinear element which limits current flow through a base terminal of a bipolar transistor, whereby the output-signal amplitude of the amplifier is substantially constant despite a signal of varying amplitude from the oscillator, is disclosed.
摘要翻译：通常，并且在本发明的一种形式中，用于晶体管放大器的偏置电路包括限制晶体管中的电流流动的非线性元件，由此限制晶体管的输出信号幅度，并且保护晶体管不超过最大电流级别，被披露。在本发明的另一种形式中，一种用于晶体管放大器的偏置电路，包括非线性元件44，其限制电流流过双极晶体管48的基极，由此双极晶体管48的输出信号幅度受限制，电流流过公开了晶体管48的集电极或发射极端子超过最大安全电平。在本发明的另一种形式中，放大器包括放大晶体管48和偏置电路，其中偏置电路包括非线性元件44，该非线性元件限制电流流过双极晶体管48的基极端子，由此输出信号幅度公开了放大器的限制，并且防止了通过放大晶体管48的集电极或发射极端子的电流超过最大安全水平。在本发明的另一种形式中，包括振荡器92和放大器94的振荡器电路，其中放大器包括放大晶体管和偏置电路，并且其中偏置电路包括非线性元件，其限制通过基极的电流公开了一种双极晶体管，由此尽管来自振荡器的幅度变化的信号，放大器的输出信号幅度基本上是恒定的。

4. 发明申请

US20100259321A1 FIELD EFFECT TRANSISTOR HAVING A PLURALITY OF FIELD PLATES 有权
标题翻译：具有多种现场平板的场效应晶体管
公开(公告)号：US20100259321A1
公开(公告)日：2010-10-14
申请号：US12423776
申请日：2009-04-14
申请人： Hua-Quen Tserng , Deep C. Dumka , Martin E. Jones , Charles F. Campbell , Anthony M. Balistreri
发明人： Hua-Quen Tserng , Deep C. Dumka , Martin E. Jones , Charles F. Campbell , Anthony M. Balistreri
IPC分类号： H03H11/00 , H01L29/06 , H01L29/778 , H01L29/78 , H01L29/812
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/404
摘要： Embodiments include but are not limited to apparatuses and systems including a field-effect transistor switch. A field-effect transistor switch may include a first field plate coupled with a gate electrode, the first field plate disposed substantially equidistant from a source electrode and a drain electrode. The field-effect transistor switch may also include a second field plate proximately disposed to the first field plate and disposed substantially equidistant from the source electrode and the drain electrode. The first and second field plates may be configured to reduce an electric field between the source electrode and the gate electrode and between the drain electrode and the gate electrode.
摘要翻译：实施例包括但不限于包括场效应晶体管开关的装置和系统。场效应晶体管开关可以包括与栅电极耦合的第一场板，第一场板基本上与源电极和漏电极等距离设置。场效应晶体管开关还可以包括靠近第一场板并且与源电极和漏电极基本上等距离设置的第二场板。第一和第二场板可以被配置为减小源电极和栅电极之间以及漏电极和栅电极之间的电场。

5. 发明授权

US5386822A Resuscitation apparatus 失效
标题翻译：复苏装置
公开(公告)号：US5386822A
公开(公告)日：1995-02-07
申请号：US751749
申请日：1991-08-29
申请人： Martin E. Jones
发明人： Martin E. Jones
IPC分类号： A61M16/00
CPC分类号： A61M16/0048
摘要： Simple compact apparatus for artificial resuscitation which avoids mouth-to-mouth contact. The apparatus enables a person to force exhaled air from his lungs into the lungs of a victim without mouth-to-mouth contact, the air flow being controlled by a flutter valve, so that air flows only from the person to the patient, with any fluid exhaled by the patient being by-passed around the valve and through appropriate outlets to the atmosphere.
摘要翻译：用于人造复苏的简单紧凑装置，避免口对口接触。该装置使得人能够将呼出的空气从他的肺部进入受害者的肺部而没有口对口接触，气流由颤动阀控制，使得空气仅从人流到患者，任何由患者呼出的流体绕过阀门并通过适当的出口流向大气。

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