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1. 发明授权

US09179504B2 Electric power converting apparatus and induction heating apparatus 有权
标题翻译：电力转换装置和感应加热装置
公开(公告)号：US09179504B2
公开(公告)日：2015-11-03
申请号：US13062302
申请日：2010-07-30
申请人： Shun Kazama , Masaki Tagome , Makoto Kitabatake
发明人： Shun Kazama , Masaki Tagome , Makoto Kitabatake
IPC分类号： H05B6/04 , H05B6/06 , H02M1/14
CPC分类号： H05B6/062 , H02M1/14 , H05B6/04
摘要： To aim to reduce ripple current flowing through a capacitor in a power converter apparatus including a converter, the capacitor and an inverter. A current sensor 6 is connected between a capacitor 5 and an inverter circuit 7 for detecting current Iinv flowing from the capacitor 5 to the inverter circuit 7. A frequency detecting subunit 11 performs fast Fourier transform on a waveform of the current Iinv to detect a frequency of a frequency component having the largest amplitude. Also, the frequency detecting subunit 12 detects a zero-cross point of the frequency component having the largest amplitude. Then a carrier signal control subunit 13 performs control such that a frequency and a rise time of a PWM carrier signal for driving the converter circuit 4 match the frequency and the zero-cross point that have been detected by the frequency detecting subunit 11 and the phase detecting subunit 12.
摘要翻译：旨在减少在包括转换器，电容器和逆变器的功率转换器装置中流过电容器的纹波电流。电流传感器6连接在电容器5和逆变器电路7之间，用于检测从电容器5流向逆变器电路7的电流Iinv。频率检测子单元11对电流Iinv的波形执行快速傅里叶变换，以检测频率具有最大振幅的频率分量。此外，频率检测子单元12检测具有最大振幅的频率分量的零交叉点。然后，载波信号控制子单元13执行控制，使得用于驱动转换器电路4的PWM载波信号的频率和上升时间与由频率检测子单元11检测到的频率和零交叉点相匹配，检测子单元12。

2. 发明授权

US08390165B2 Synchronous motor drive system 有权
标题翻译：同步电机驱动系统
公开(公告)号：US08390165B2
公开(公告)日：2013-03-05
申请号：US12995143
申请日：2009-05-28
申请人： Noriyoshi Nishiyama , Masaki Tagome , Yasuhiro Kondo , Makoto Kitabatake , Shun Kazama
发明人： Noriyoshi Nishiyama , Masaki Tagome , Yasuhiro Kondo , Makoto Kitabatake , Shun Kazama
IPC分类号： H02K3/04 , H02K1/00
CPC分类号： H02K21/222 , H02K3/28 , H02K29/03
摘要： Provided is a synchronous motor including a rotor having magnetic poles distributed circumferentially along a rotation direction of the rotor at equal intervals, and a stator having stator teeth arranged circumferentially along the rotation direction of the rotor, each tooth wound with a stator coil by concentrated winding. Every M consecutive stator teeth belong to one of stator teeth groups arranged at equal intervals. The M consecutive stator teeth in each stator teeth group are arranged at intervals different from the intervals of the magnetic poles of the rotor. The stator coils wound around the M consecutive stator teeth are connected to separate terminals. A motor driver supplies currents of different phases to the stator coils via the respective terminals.
摘要翻译：本发明提供一种同步电动机，其具有转子，该转子具有沿着转子的旋转方向等间隔地周向分布的磁极，定子具有沿着转子的旋转方向周向配置的定子齿，每个齿通过集中绕组卷绕定子线圈。每个M个连续的定子齿属于以等间隔布置的定子齿组之一。每个定子齿组中的M个连续的定子齿以与转子的磁极间隔不同的间隔排列。缠绕在M个连续的定子齿上的定子线圈连接到分离的端子。电机驱动器通过各个端子向定子线圈提供不同相的电流。

3. 发明申请

US20120119690A1 SYNCHRONOUS ELECTRIC MOTOR DRIVE SYSTEM 有权
标题翻译：同步电机驱动系统
公开(公告)号：US20120119690A1
公开(公告)日：2012-05-17
申请号：US13386966
申请日：2011-02-15
申请人： Noriyoshi Nishiyama , Makoto Kitabatake
发明人： Noriyoshi Nishiyama , Makoto Kitabatake
IPC分类号： H02P6/08 , H02K3/28
CPC分类号： H02K1/146 , H02K3/20 , H02K3/28 , H02K21/16 , H02K21/222 , H02P6/10 , H02P25/18
摘要： A synchronous motor drive system improves the design flexibility regarding torque characteristics as compared with conventionally available design flexibility. A synchronous motor has a rotor and a stator. Each of at least two adjacent stator teeth has a slit formed at the tip thereof. Each of a plurality of stator teeth has a main coil wound therearound in concentrated winding. Between each two adjacent teeth having a slit, a sub-coil is wound around in a manner of being accommodated in the respective slits. The drive device separately controls electric current supplied to the main coils and electric current supplied to the sub-coil.
摘要翻译：与常规可用的设计灵活性相比，同步电机驱动系统提高了转矩特性的设计灵活性。同步电动机具有转子和定子。至少两个相邻的定子齿中的每一个在其尖端处形成有狭缝。多个定子齿中的每一个具有卷绕在集中绕组上的主线圈。在具有狭缝的每个两个相邻齿之间，子线圈以容纳在各个狭缝中的方式缠绕。驱动装置分别控制供给主线圈的电流和供给到副线圈的电流。

4. 发明授权

US07846828B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07846828B2
公开(公告)日：2010-12-07
申请号：US12338395
申请日：2008-12-18
申请人： Osamu Kusumoto , Makoto Kitabatake , Masao Uchida , Kunimasa Takahashi , Kenya Yamashita , Masahiro Hagio , Kazuyuki Sawada
发明人： Osamu Kusumoto , Makoto Kitabatake , Masao Uchida , Kunimasa Takahashi , Kenya Yamashita , Masahiro Hagio , Kazuyuki Sawada
IPC分类号： H01L21/28 , H01L21/44
CPC分类号： H01L29/7828 , H01L21/046 , H01L21/0475 , H01L21/0485 , H01L21/30625 , H01L29/1029 , H01L29/105 , H01L29/1608 , H01L29/365 , H01L29/41766 , H01L29/66068 , H01L29/7838 , H01L29/812
摘要： Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate, annealing for activating the implanted dopant ions is performed, and then the carbon film is removed. Thus, a smooth surface having hardly any surface roughness caused by the annealing is obtained. Furthermore, if a channel layer is epitaxially grown, the surface roughness of the channel layer is smaller than that of the underlying layer. Since the channel layer having a smooth surface is provided, it is possible to obtain a MISFET with a high current drive capability.
摘要翻译：进行离子注入以在SiC衬底上的高电阻SiC层的部分中形成p阱区域和源极区域，并且在衬底上沉积碳膜。通过沉积在基板上的碳膜，进行用于激活注入的掺杂离子的退火，然后除去碳膜。因此，获得了退火几乎没有表面粗糙度的光滑表面。此外，如果沟道层外延生长，则沟道层的表面粗糙度小于下层的表面粗糙度。由于提供了具有平滑表面的沟道层，所以可以获得具有高电流驱动能力的MISFET。

5. 发明申请

US20090104762A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090104762A1
公开(公告)日：2009-04-23
申请号：US12338395
申请日：2008-12-18
申请人： Osamu KUSUMOTO , Makoto KITABATAKE , Masao UCHIDA , Kunimasa TAKAHASHI , Kenya YAMASHITA , Masahiro HAGIO , Kazuyuki SAWADA
发明人： Osamu KUSUMOTO , Makoto KITABATAKE , Masao UCHIDA , Kunimasa TAKAHASHI , Kenya YAMASHITA , Masahiro HAGIO , Kazuyuki SAWADA
IPC分类号： H01L21/265
CPC分类号： H01L29/7828 , H01L21/046 , H01L21/0475 , H01L21/0485 , H01L21/30625 , H01L29/1029 , H01L29/105 , H01L29/1608 , H01L29/365 , H01L29/41766 , H01L29/66068 , H01L29/7838 , H01L29/812
摘要： Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate, annealing for activating the implanted dopant ions is performed, and then the carbon film is removed. Thus, a smooth surface having hardly any surface roughness caused by the annealing is obtained. Furthermore, if a channel layer is epitaxially grown, the surface roughness of the channel layer is smaller than that of the underlying layer. Since the channel layer having a smooth surface is provided, it is possible to obtain a MISFET with a high current drive capability.
摘要翻译：进行离子注入以在SiC衬底上的高电阻SiC层的部分中形成p阱区域和源极区域，并且在衬底上沉积碳膜。通过沉积在基板上的碳膜，进行用于激活注入的掺杂离子的退火，然后除去碳膜。因此，获得了退火几乎没有表面粗糙度的光滑表面。此外，如果沟道层外延生长，则沟道层的表面粗糙度小于下层的表面粗糙度。由于提供了具有平滑表面的沟道层，所以可以获得具有高电流驱动能力的MISFET。

6. 发明授权

US07462540B2 Silicon carbide semiconductor device and process for producing the same 失效
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US07462540B2
公开(公告)日：2008-12-09
申请号：US10553845
申请日：2005-01-28
申请人： Kunimasa Takahashi , Makoto Kitabatake , Kenya Yamashita , Masao Uchida , Osamu Kusumoto , Ryoko Miyanaga
发明人： Kunimasa Takahashi , Makoto Kitabatake , Kenya Yamashita , Masao Uchida , Osamu Kusumoto , Ryoko Miyanaga
IPC分类号： H01L21/00
CPC分类号： H01L21/046
摘要： A method for fabricating a semiconductor device includes the steps of implanting ions into a silicon carbide thin film (2) formed on a silicon carbide substrate (1), heating the silicon carbide substrate in a reduced pressure atmosphere to form a carbon layer (5) on the surface of the silicon carbide substrate, and performing activation annealing with respect to the silicon carbide substrate in an atmosphere under a pressure higher than in the step of forming the carbon layer (5) and at a temperature higher than in the step of forming the carbon layer (5).
摘要翻译：一种制造半导体器件的方法包括以下步骤：将离子注入形成在碳化硅衬底（1）上的碳化硅薄膜（2）中，在减压气氛中加热碳化硅衬底以形成碳层（5）在碳化硅衬底的表面上，并且在比形成碳层（5）的步骤高的压力的气氛中，并且在高于形成步骤的温度的气氛中，相对于碳化硅衬底进行激活退火碳层（5）。

7. 发明申请

US20060055027A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20060055027A1
公开(公告)日：2006-03-16
申请号：US10536828
申请日：2004-09-06
申请人： Makoto Kitabatake , Osamu Kusumoto , Nasao Uchida , Kunimasa Takahashi , Kenya Yamashita
发明人： Makoto Kitabatake , Osamu Kusumoto , Nasao Uchida , Kunimasa Takahashi , Kenya Yamashita
IPC分类号： H01L23/34
CPC分类号： H01L23/3735 , H01L23/3672 , H01L23/4334 , H01L24/48 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/01004 , H01L2924/0102 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/12032 , H01L2924/12036 , H01L2924/1301 , H01L2924/13055 , H01L2924/13062 , H01L2924/13063 , H01L2924/13091 , H01L2924/181 , H01L2924/19041 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor apparatus includes a semiconductor chip 61 including a power semiconductor device using a wide band gap semiconductor, base materials 62 and 63, first and second intermediate members 65 and 68a, a heat conducting member 66, a radiation fin 67, and an encapsulating material 68 for encapsulating the semiconductor chip 61, the first and second intermediate member 65 and 68a and the heat conducting member 66. The tips of the base materials 62 and 63 work respectively as external connection terminals 62a and 63a. The second intermediate member 68a is made of a material with lower heat conductivity than the first intermediate member 65, and a contact area with the semiconductor chip 61 is larger in the second intermediate member 68a than in the first intermediate member.
摘要翻译：半导体装置包括半导体芯片61，其包括使用宽带隙半导体的功率半导体器件，基底材料62和63，第一和第二中间构件65和68a，导热构件66，辐射翅片67和封装用于封装半导体芯片61，第一和第二中间构件65和68a以及导热构件66的材料68。基材62和63的尖端分别作为外部连接端子62a和63a工作。第二中间构件68a由比第一中间构件65低导热性的材料制成，并且与第一中间构件相比，第二中间构件68a的与半导体芯片61的接触面积更大。

8. 发明授权

US06995396B2 Semiconductor substrate, semiconductor device and method for fabricating the same 有权
公开(公告)号：US06995396B2
公开(公告)日：2006-02-07
申请号：US10279119
申请日：2002-10-24
申请人： Kunimasa Takahashi , Masao Uchida , Makoto Kitabatake , Toshiya Yokogawa , Osamu Kusumoto , Kenya Yamashita , Ryoko Miyanaga
发明人： Kunimasa Takahashi , Masao Uchida , Makoto Kitabatake , Toshiya Yokogawa , Osamu Kusumoto , Kenya Yamashita , Ryoko Miyanaga
IPC分类号： H01L31/0312 , H01L29/80 , H01L31/112 , H01L29/76 , H01L27/095
CPC分类号： H01L29/365 , C30B25/02 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/02584 , H01L21/0262 , H01L21/02661 , H01L21/0445 , H01L29/0657 , H01L29/1608 , H01L29/66068
摘要： A SiC bulk substrate whose top face has been flattened is placed in a vertical thin film growth system to be annealed in an inert gas atmosphere. A material gas of Si is then supplied at a flow rate of 1 mL/min. at a substrate temperature of 1200° C. through 1600° C. Subsequently, the diluent gas is changed to a hydrogen gas at a temperature of 1600° C., and material gases of Si and carbon are supplied with nitrogen intermittently supplied, so as to deposit SiC thin films on the SiC bulk substrate. In a flat δ-doped multilayered structure thus formed, an average height of macro steps formed on the top face and on interfaces therein is 30 nm or less. When the resultant substrate is used, a semiconductor device with a high breakdown voltage and high mobility can be realized.

9. 发明授权

US06940127B2 Equipment for communication system and semiconductor integrated circuit device 有权
标题翻译：通信系统和半导体集成电路设备设备
公开(公告)号：US06940127B2
公开(公告)日：2005-09-06
申请号：US10631086
申请日：2003-07-31
申请人： Toshiya Yokogawa , Kunimasa Takahashi , Masao Uchida , Makoto Kitabatake , Osamu Kusumoto
发明人： Toshiya Yokogawa , Kunimasa Takahashi , Masao Uchida , Makoto Kitabatake , Osamu Kusumoto
IPC分类号： H01L21/82 , H01L27/06 , H01L29/10 , H01L29/15 , H01L29/24 , H01L29/36 , H01L29/772 , H01L29/812 , H01L29/872 , H03D7/12 , H03F3/60 , H01L29/76
CPC分类号： H03F3/601 , H01L21/8213 , H01L27/0605 , H01L29/105 , H01L29/157 , H01L29/1608 , H01L29/365 , H01L29/7725 , H01L29/812 , H01L29/872 , H03D7/125 , H03F2200/294
摘要： Equipment for a communication system has a semiconductor device formed by integrating a Schottky diode, a MOSFET, a capacitor, and an inductor in a SiC substrate. The SiC substrate has a first multilayer portion and a second multilayer portion provided upwardly in this order. The first multilayer portion is composed of δ-doped layers each containing an n-type impurity (nitrogen) at a high concentration and undoped layers which are alternately stacked. The second multilayer portion is composed of δ-doped layers each containing a p-type impurity (aluminum) at a high concentration and undoped layers which are alternately stacked. Carriers in the δ-doped layers spread out extensively to the undoped layers. Because of a low impurity concentration in each of the undoped layers, scattering by impurity ions is reduced so that a low resistance and a high breakdown voltage are obtained.
摘要翻译：用于通信系统的设备具有通过将肖特基二极管，MOSFET，电容器和电感器集成在SiC衬底中而形成的半导体器件。 SiC衬底具有依次向上设置的第一多层部分和第二多层部分。第一多层部分由各自含有高浓度的n型杂质（氮）和交替层叠的未掺杂层的δ掺杂层组成。第二多层部分由各自含有高浓度的p型杂质（铝）和交替层叠的未掺杂层的δ掺杂层组成。 δ掺杂层中的载体广泛扩展到未掺杂的层。由于每个未掺杂的层中的杂质浓度低，所以杂质离子的散射被降低，从而获得低的电阻和高的击穿电压。

10. 发明授权

US06692327B1 Method for producing electron emitting element 失效
标题翻译：用于制造包括两种材料的圆柱形电子发射元件的方法
公开(公告)号：US06692327B1
公开(公告)日：2004-02-17
申请号：US09480415
申请日：2000-01-11
申请人： Masahiro Deguchi , Makoto Kitabatake , Kanji Imai , Tomohiro Sekiguchi , Hideo Kurokawa , Keisuke Koga , Tetsuya Shiratori , Toru Kawase
发明人： Masahiro Deguchi , Makoto Kitabatake , Kanji Imai , Tomohiro Sekiguchi , Hideo Kurokawa , Keisuke Koga , Tetsuya Shiratori , Toru Kawase
IPC分类号： H01J902
CPC分类号： H01J9/025 , H01J1/304 , H01J2201/30446
摘要： An electron emission element includes a substrate, a cathode electrode formed on the substrate, an anode electrode disposed so as to be opposed to the cathode electrode, an electron emission member disposed on the cathode electrode, a control electrode disposed between the cathode electrode and the anode electrode, and an insulating layer. The electron emission member includes a first member having a hole and a second member filling the hole, wherein the second member is more likely to emit electrons than the first member.
摘要翻译：电子发射元件包括基板，形成在基板上的阴极电极，与阴极相对设置的阳极电极，设置在阴极电极上的电子发射部件，设置在阴极电极和阴极电极之间的控制电极，阳极电极和绝缘层。电子发射构件包括具有孔的第一构件和填充孔的第二构件，其中第二构件比第一构件更可能发射电子。

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