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1. 发明申请

WO2009083733A1 IMPROVEMENTS RELATING TO ION IMPLANTERS 审中-公开
标题翻译：关于离子植入物的改进
公开(公告)号：WO2009083733A1
公开(公告)日：2009-07-09
申请号：PCT/GB2008/004308
申请日：2008-12-30
申请人： APPLIED MATERIALS, INC. , ALCOTT, Gregory, Robert , MURRELL, Adrian
发明人： ALCOTT, Gregory, Robert , MURRELL, Adrian
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/04 , H01J2237/0213 , H01J2237/022 , H01J2237/04756
摘要： The present invention relates to components in an ion implanter that may see incidence of the ion beam, such as a beam dump or a beam stop. Such components will be prone to the ions sputtering material from their surfaces, and sputtered material may become entrained in the ion beam. This entrained material is a source of contamination. The present invention provides an ion implanter comprising power supply apparatus and an ion-receiving component. The component has an opening that receives ions from an ion beam such that ions strike an internal surface. The power supply apparatus is arranged to provide an electrical bias to the internal surface to decelerate the ions prior to their striking the surface, thereby mitigating the problem of material being sputtered from the surface.
摘要翻译：本发明涉及离子注入机中的组件，其可以看到离子束的入射，例如光束倾倒或光束停止。这些组分将倾向于从它们的表面离子溅射材料，并且溅射的材料可能被夹带在离子束中。这种夹带的材料是污染源。本发明提供了一种离子注入机，其包括电源装置和离子接收部件。该组件具有从离子束接收离子的开口，使得离子撞击内表面。供电装置被布置成在离开表面之前向内表面提供电偏压以使离子减速，从而减轻从表面溅射的材料的问题。

2. 发明申请

WO2009053689A3 ION BEAM EXTRACTION ASSEMBLY IN AN ION IMPLANTER 审中-公开
标题翻译：离子束提取装置在离子植入物中
公开(公告)号：WO2009053689A3
公开(公告)日：2009-11-26
申请号：PCT/GB2008003574
申请日：2008-10-20
申请人： APPLIED MATERIALS INC , SPRAGGON LEE , MURRELL ADRIAN
发明人： SPRAGGON LEE , MURRELL ADRIAN
IPC分类号： H01J37/04 , H01J27/02 , H01J37/317
CPC分类号： H01J27/024 , H01J37/08 , H01J37/3171
摘要： The present invention relates to an ion beam extraction assembly for use in an ion beam generation apparatus such as those used, for example, in an ion implanter. An ion beam extraction assembly is provided for mounting within an ion beam generating apparatus comprising an ion source such that the extraction assembly is operable to extract ions from the ion source as an ion beam. The extraction assembly comprises an electrode assembly separate from the ion source, an electrode of the electrode assembly defining at least partly a path through the extraction assembly for passage of an ion beam. At least a part of the electrode assembly adjacent the path is tungsten and at least a part of the electrode assembly that is remote from the path is formed from a less expensive and/or lighter material.
摘要翻译：本发明涉及用于离子束产生装置中的离子束提取组件，例如用于离子注入机中的那些。提供离子束提取组件，用于安装在包括离子源的离子束发生装置内，使得提取组件可操作以从离子源提取离子作为离子束。提取组件包括与离子源分离的电极组件，电极组件的电极至少部分地限定通过提取组件的通过离子束的路径。邻近路径的电极组件的至少一部分是钨，远离路径的电极组件的至少一部分由较便宜和/或较轻的材料形成。

3. 发明申请

WO2009083726A1 IMPROVEMENTS RELATING TO ION IMPLANTERS 审中-公开
标题翻译：关于离子植入物的改进
公开(公告)号：WO2009083726A1
公开(公告)日：2009-07-09
申请号：PCT/GB2008/004296
申请日：2008-12-30
申请人： APPLIED MATERIALS, INC. , ALCOTT, Gregory, Robert , MURRELL, Adrian , CASTLE, Matthew , HILKENE, Martin
发明人： ALCOTT, Gregory, Robert , MURRELL, Adrian , CASTLE, Matthew , HILKENE, Martin
IPC分类号： H01J37/317 , H01J37/05
CPC分类号： H01J37/3171 , H01J37/05 , H01J2237/0213 , H01J2237/022 , H01J2237/0268 , H01J2237/028 , H01J2237/24405 , H01J2237/31701 , H01J2237/31705
摘要： The present invention relates to components (110) in an ion implanter that may see incidence of the ion beam, such as a beam dump or a beam stop. Such components will be prone to the ions sputtering material from their surfaces, and sputtered material may become entrained in the ion beam. This entrained material is a source of contamination. The present invention provides such components with a chamber having an elongate slot opening defined by edges, (130, 132, 134, 136) and operating the ion implanter such that a central portion of the ion beam (134) enters the component through the opening with the edges clipping at least a peripheral portion of the ion beam. The arrangement mitigates the problem of sputtered material escaping back out from the component and becoming entrained in the ion beam.
摘要翻译：本发明涉及可以看到离子束的入射的离子注入机中的部件（110），例如光束转储或光束停止。这些组分将倾向于从它们的表面离子溅射材料，并且溅射的材料可能被夹带在离子束中。这种夹带的材料是污染源。本发明提供了具有腔室的这种部件，其具有由边缘（130,132,134,136）限定的细长狭槽开口，并且操作离子注入机，使得离子束（134）的中心部分通过开口边缘至少夹住离子束的周边部分。该装置减轻了溅射材料从组件中退出并被夹带在离子束中的问题。

4. 发明申请

WO2009053678A1 IMPROVEMENTS RELATING TO ION IMPLANTERS 审中-公开
标题翻译：关于离子植入物的改进
公开(公告)号：WO2009053678A1
公开(公告)日：2009-04-30
申请号：PCT/GB2008/003551
申请日：2008-10-20
申请人： APPLIED MATERIALS, INC. , ALCOTT, Gregory, Robert , MURRELL, Adrian
发明人： ALCOTT, Gregory, Robert , MURRELL, Adrian
IPC分类号： H01J37/317 , H01J37/02
CPC分类号： H01J37/09 , H01J37/3171 , H01J2237/022
摘要： The present invention relates to components (110) in ion implanters having surfaces, such as graphite surfaces, adjacent to the path of the ion beam (34) through the ion implanter. Such surfaces will be prone to sputtering, and sputtered material may become entrained in the ion beam. The present invention sees the use of surfaces that are formed so as to present a series of angled faces (118a, 118b) that meet at sharp intersections. In this way, any material will be sputtered away from the ion beam.
摘要翻译：本发明涉及具有通过离子注入机与离子束（34）的路径相邻的表面（例如石墨表面）的离子注入机中的部件（110）。这种表面将易于溅射，并且溅射的材料可能被夹带在离子束中。本发明认为使用形成为呈现在尖锐交点处相遇的一系列倾斜面（118a，118b）的表面。以这种方式，任何材料将被溅射离开离子束。

5. 发明申请

WO2008037959A1 A METHOD OF IMPLANTING A SUBSTRATE AND AN ION IMPLANTER FOR PERFORMING THE METHOD 审中-公开
标题翻译：一种用于实施方法的衬底和离子植入物的方法
公开(公告)号：WO2008037959A1
公开(公告)日：2008-04-03
申请号：PCT/GB2007/003542
申请日：2007-09-18
申请人： APPLIED MATERIALS, INC. , SATOH, Shu , RYDING, Geoffrey , FARLEY, Marvin , SAKASE, Takao , KINDERSLEY, Peter , BANKS, Peter, M. , DOBSON, Matthew, P. , MURRELL, Adrian
发明人： SATOH, Shu , RYDING, Geoffrey , FARLEY, Marvin , SAKASE, Takao , KINDERSLEY, Peter , BANKS, Peter, M. , DOBSON, Matthew, P. , MURRELL, Adrian
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/3023 , H01J49/30 , H01J2237/20228 , H01J2237/20285 , H01J2237/2487 , H01J2237/30488 , H01J2237/31703 , H01J2237/31708 , H01L21/265 , H01L21/67005 , H01L21/68714 , H01L21/68764 , Y10S438/961
摘要： An implanter provides two-dimensional scanning of a substrate (17) relative to an implant beam (19) so that the beam draws a raster of scan lines (35) on the substrate. The beam current is measured at turnaround points (38) off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.
摘要翻译：注入机提供相对于注入光束（19）的衬底（17）的二维扫描，使得光束在衬底上绘制扫描线（35）的光栅。在离开衬底的周转点（38）处测量束电流，并且使用电流值来控制随后的快速扫描速度，以补偿束电流中任何变化对慢扫描方向上的剂量均匀性的影响。扫描可以产生不相交的均匀间隔的平行扫描线的光栅，并且选择线之间的间隔以确保适当的剂量均匀性。

6. 发明申请

WO2009053689A2 ION BEAM EXTRACTION ASSEMBLY IN AN ION IMPLANTER 审中-公开
标题翻译：离子注入器中的离子束提取装置
公开(公告)号：WO2009053689A2
公开(公告)日：2009-04-30
申请号：PCT/GB2008/003574
申请日：2008-10-20
申请人： APPLIED MATERIALS, INC. , SPRAGGON, Lee , MURRELL, Adrian
发明人： SPRAGGON, Lee , MURRELL, Adrian
CPC分类号： H01J27/024 , H01J37/08 , H01J37/3171
摘要： The present invention relates to an ion beam extraction assembly for use in an ion beam generation apparatus such as those used, for example, in an ion implanter. An ion beam extraction assembly is provided for mounting within an ion beam generating apparatus comprising an ion source such that the extraction assembly is operable to extract ions from the ion source as an ion beam. The extraction assembly comprises an electrode assembly separate from the ion source, an electrode of the electrode assembly defining at least partly a path through the extraction assembly for passage of an ion beam. At least a part of the electrode assembly adjacent the path is tungsten and at least a part of the electrode assembly that is remote from the path is formed from a less expensive and/or lighter material.
摘要翻译：本发明涉及离子束提取组件，其用于例如在离子注入机中使用的离子束产生装置。提供离子束提取组件用于安装在包括离子源的离子束产生装置内，使得提取组件可操作以从离子源提取离子作为离子束。提取组件包括与离子源分离的电极组件，电极组件的电极至少部分地限定穿过提取组件的用于离子束通过的路径。邻近路径的电极组件的至少一部分是钨，并且远离路径的电极组件的至少一部分由较便宜和/或较轻的材料形成。

7. 发明申请

WO03044837A3 ION IMLANTATION METHOD AND APPARATUS 审中-公开
标题翻译：离子IML方法和装置
公开(公告)号：WO03044837A3
公开(公告)日：2003-10-16
申请号：PCT/GB0204886
申请日：2002-10-30
申请人： APPLIED MATERIALS INC , MURRELL ADRIAN
发明人： MURRELL ADRIAN
IPC分类号： H01J37/08 , H01J37/317 , H01L21/265 , H01L29/167
CPC分类号： H01J37/08 , H01J37/3171 , H01L21/26513
摘要： Ions are implanted in a substrate using a beam of decaborane ions containing up to 10 atoms of boron in each ion. Decaborane occurs naturally in two isotopes. Prior to use in the ion source to produce the decaborane beam, the boron used in the decaborane feedstock is isotopically enriched to increase the abundance of the most abundant isotope. The resulting mass-to-charge spread in the ion beam from the mass analyser is reduced.
摘要翻译：使用在每个离子中含有多达10个硼原子的十硼烷离子束将离子注入到衬底中。十硼烷天然存在于两种同位素中。在使用离子源生产十硼烷光束之前，在十硼烷原料中使用的硼被同位素富集，以增加最丰富的同位素的丰度。来自质量分析器的离子束中产生的质量 - 电荷扩散减少。

8. 发明申请

WO2003044837A2 METHOD OF ION IMPLANTATION AND AN IMPLANTER FOR PERFORMING THE METHOD 审中-公开
标题翻译：离子植入方法和用于实施方法的植绒
公开(公告)号：WO2003044837A2
公开(公告)日：2003-05-30
申请号：PCT/GB2002/004886
申请日：2002-10-30
申请人： APPLIED MATERIALS, INC. , MURRELL, Adrian
发明人： MURRELL, Adrian
IPC分类号： H01L21/00
CPC分类号： H01J37/08 , H01J37/3171 , H01L21/26513
摘要： Ions are implanted in a substrate using a beam of decaborane ions containing up to 10 atoms of boron in each ion. Decaborane occurs naturally in two isotopes. Prior to use in the ion source to produce the decaborane beam, the boron used in the decaborane feedstock is isotopically enriched to increase the abundance of the most abundant isotope. The resulting mass-to-charge spread in the ion beam from the mass analyser is reduced.
摘要翻译：使用在每个离子中含有多达10个硼原子的十硼烷离子束将离子注入到衬底中。十硼烷天然存在于两种同位素中。在使用离子源生产十硼烷光束之前，在十硼烷原料中使用的硼被同位素富集，以增加最丰富的同位素的丰度。来自质量分析器的离子束中产生的质量 - 电荷扩散减少。

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