专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2012085715A1 NANOWIRE FIELD -EFFECT DEVICE WITH MULTIPLE GATES 审中-公开
标题翻译：具有多个门的NANOWIRE场效应器件
公开(公告)号：WO2012085715A1
公开(公告)日：2012-06-28
申请号：PCT/IB2011/055369
申请日：2011-11-30
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , KARG, Siegfried, Friedrich , MOSELUND, Kirsten, Emilie
发明人： KARG, Siegfried, Friedrich , MOSELUND, Kirsten, Emilie
IPC分类号： H01L29/10 , H01L29/423 , H01L29/775 , H01L29/06 , H01L29/78 , B82Y40/00 , B82Y10/00 , H01L29/739
CPC分类号： H01L29/66439 , B82Y10/00 , B82Y40/00 , H01L29/0676 , H01L29/068 , H01L29/1054 , H01L29/4232 , H01L29/7391 , H01L29/775
摘要： The present invention relates to a semiconductor device (1) comprising: at least a nanowire (2) configured to comprise: at least a source region (3) comprising a corresponding source semiconductor material, at least a drain region (4) comprising a corresponding drain semiconductor material and at least a channel region (5) comprising a corresponding channel semiconductor material, the channel region (5) being arranged between the source region (3) and the drain region (4), at least a gate electrode (6) that is arranged relative to the nanowire (2) to circumferentially surround at least a part of the channel region (5), and at least a strain gate (7) that is arranged relative to the nanowire (2) to circumferentially surround at least a part of a segment of the nanowire (2), the strain gate (7) being configured to apply a strain to the nanowire segment (8), thereby to facilitate at least an alteration of the energy bands corresponding to the source region (3) relative to the energy bands corresponding to the channel region (5).
摘要翻译：半导体器件（1）技术领域本发明涉及一种半导体器件（1），包括：至少纳米线（2），其被配置为包括：至少源极区域（3），其包括对应的源极半导体材料，至少漏极区域（4）漏极半导体材料和至少一个包括相应的沟道半导体材料的沟道区（5），所述沟道区（5）布置在源区（3）和漏区（4）之间，至少栅电极（6）相对于纳米线（2）布置以周向地包围沟道区域（5）的至少一部分，以及至少一个应变栅极（7），其相对于纳米线（2）布置成周向地包围至少一个纳米线段（2）的一部分，应变门（7）被配置为向纳米线段（8）施加应变，从而促进对应于源区（3）的能带的至少改变，相对于能带对应于通道区域（5）。

2. 发明申请

WO2013014547A1 Tunnel field-effect transistor 审中-公开
标题翻译：隧道场效应晶体管
公开(公告)号：WO2013014547A1
公开(公告)日：2013-01-31
申请号：PCT/IB2012/053088
申请日：2012-06-19
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , MOSELUND, Kirsten Emilie , STANLEY-MARBELL, Phillip , DOERING, Andreas Christian , BJOERK, Mikael T.
发明人： MOSELUND, Kirsten Emilie , STANLEY-MARBELL, Phillip , DOERING, Andreas Christian , BJOERK, Mikael T.
IPC分类号： H01L29/739 , H01L29/423
CPC分类号： H01L29/7391 , H01L29/42312
摘要： The present invention relates to a tunnel field-effect transistor (1) comprising: at least a source region (2) comprising a corresponding source semiconductor material; at least a drain region (3) comprising a corresponding drain semiconductor material, and at least a channel region (4) comprising a corresponding channel semiconductor material, which is arranged between the source region (2) and the drain region(3), the tunnel field-effect transistor (1)further comprising: at least a source-channel gate electrode (5) provided on at least an interface (5') between the source region (2) and the channel region (4); at least an insulator (5") corresponding to the source-channel gate electrode (5) that is provided between the source-channel gate electrode (5) and at least the interface (5') between the source region (2) and the channel region (4), at least a drain-channel gate electrode (6) provided on at least an interface(6') between the drain region (3) and the channel region(4), and at least an insulator(6") corresponding to the drain-channel gate electrode (6) that is provided between the drain-channel gate electrode (6) and at least the interface (6) between the drain region (3) and the channel region(4).
摘要翻译：隧道场效应晶体管技术领域本发明涉及一种隧道场效应晶体管（1），包括：至少源极区（2），其包括相应的源半导体材料; 至少包括相应的漏极半导体材料的漏极区域（3），以及至少包括布置在源极区域（2）和漏极区域（3）之间的相应沟道半导体材料的沟道区域（4），隧道场效应晶体管（1）还包括：至少设置在源区（2）和沟道区（4）之间的至少界面（5'）上的源沟道栅电极（5）; 至少一个与源极沟道栅电极（5）相对应的绝缘体（5“），该绝缘体设置在源极栅电极（5）和至少源极区（2）和沟道区域（4），至少设置在漏极区域（3）和沟道区域（4）之间的界面（6'）上的漏极 - 沟道栅电极（6），以及至少一个绝缘体（6“ ）设置在漏极沟道栅电极（6）与至少漏极区（3）与沟道区（4）之间的界面（6）之间的漏极沟道栅电极（6）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式