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1. 发明授权

US08604572B2 Magnetic tunnel junction device 有权
标题翻译：磁隧道连接装置
公开(公告)号：US08604572B2
公开(公告)日：2013-12-10
申请号：US13160306
申请日：2011-06-14
申请人： Jian-Ping Wang , Md. Tofizur Rahman
发明人： Jian-Ping Wang , Md. Tofizur Rahman
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L29/66984 , H01L29/82 , H01L43/12
摘要： A magnetic tunnel junction device comprises a fixed magnetic layer having a first side and a second side, the fixed magnetic layer having a magnetic anisotropy that is out of the film plane of the fixed magnetic layer; a stack of a plurality of bilayers adjacent to the first side of the fixed magnetic layer, each bilayer comprising a first layer comprising at least one of cobalt, iron, a CoFeB alloy, or a CoB alloy and a second layer in contact with the first layer, the second layer comprising palladium or platinum, wherein the plurality of bilayers has a magnetic anisotropy that is out of the film plane of each of the bilayers, wherein the fixed magnetic layer is exchange coupled to the stack of the plurality of bilayers, and a tunnel barrier layer in contact with the second side of the fixed magnetic layer.
摘要翻译：磁性隧道结装置包括具有第一侧和第二侧的固定磁性层，该固定磁性层具有超出固定磁性层的膜平面的磁各向异性; 与固定磁性层的第一侧相邻的多个双层的堆叠，每个双层包括包含钴，铁，CoFeB合金或CoB合金中的至少一种的第一层和与第一层接触的第二层层，所述第二层包括钯或铂，其中所述多个双层具有超出每个双层的膜平面的磁各向异性，其中所述固定磁性层交换耦合到所述多个双层的堆叠，以及与固定磁性层的第二面接触的隧道势垒层。

2. 发明申请

US20110303997A1 MAGNETIC TUNNEL JUNCTION DEVICE 有权
标题翻译：磁铁隧道连接装置
公开(公告)号：US20110303997A1
公开(公告)日：2011-12-15
申请号：US13160306
申请日：2011-06-14
申请人： Jian-Ping Wang , Md. Tofizur Rahman
发明人： Jian-Ping Wang , Md. Tofizur Rahman
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L29/66984 , H01L29/82 , H01L43/12
摘要： A magnetic tunnel junction device comprises a fixed magnetic layer having a first side and a second side, the fixed magnetic layer having a magnetic anisotropy that is out of the film plane of the fixed magnetic layer; a stack of a plurality of bilayers adjacent to the first side of the fixed magnetic layer, each bilayer comprising a first layer comprising at least one of cobalt, iron, a CoFeB alloy, or a CoB alloy and a second layer in contact with the first layer, the second layer comprising palladium or platinum, wherein the plurality of bilayers has a magnetic anisotropy that is out of the film plane of each of the bilayers, wherein the fixed magnetic layer is exchange coupled to the stack of the plurality of bilayers, and a tunnel barrier layer in contact with the second side of the fixed magnetic layer.
摘要翻译：磁性隧道结装置包括具有第一侧和第二侧的固定磁性层，该固定磁性层具有超出固定磁性层的膜平面的磁各向异性; 与固定磁性层的第一侧相邻的多个双层的堆叠，每个双层包括包含钴，铁，CoFeB合金或CoB合金中的至少一种的第一层和与第一层接触的第二层层，所述第二层包括钯或铂，其中所述多个双层具有超出每个双层的膜平面的磁各向异性，其中所述固定磁性层交换耦合到所述多个双层的堆叠，以及与固定磁性层的第二面接触的隧道势垒层。

3. 发明申请

US20190140166A1 DEVICE, SYSTEM AND METHOD FOR IMPROVED MAGNETIC ANISOTROPY OF A MAGNETIC TUNNEL JUNCTION 审中-公开
公开(公告)号：US20190140166A1
公开(公告)日：2019-05-09
申请号：US16097801
申请日：2016-07-01
申请人： MD Tofizur RAHMAN , Christopher J. WIEGAND , Brian MAERTZ , Daniel G. OUELLETTE , Kaan OGUZ , Brian S. DOYLE , Mark L. DOCZY , Daniel B. BERGSTROM , Justin S. BROCKMAN , Oleg GOLONZKA , Tahhir GHANI , Intel Corporation
发明人： MD Tofizur RAHMAN , Christopher J. WIEGAND , Brian MAERTZ , Daniel G. OUELLETTE , Kevin P. O'BRIEN , Kaan OGUZ , Brian S. DOYLE , Mark L. DOCZY , Daniel B. BERGSTROM , Justin S. BROCKMAN , Oleg GOLONZKA , Tahir GHANI
IPC分类号： H01L43/12 , H01L43/10 , H01L43/08 , H01L43/02 , G11C11/16
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Material layer stack structures to provide a magnetic tunnel junction (MTJ) having improved perpendicular magnetic anisotropy (PMA) characteristics. In an embodiment, a free magnetic layer of the material layer stack is disposed between a tunnel barrier layer and a cap layer of magnesium oxide (Mg). The free magnetic layer includes a Cobalt-Iron-Boron (CoFeB) body substantially comprised of a combination of Cobalt atoms, Iron atoms and Boron atoms. A first Boron mass fraction of the CoFeB body is equal to or more than 25% (e.g., equal to or more than 27%) in a first region which adjoins an interface of the free magnetic layer with the tunnel barrier layer. In another embodiment, the first Boron mass fraction is more than a second Boron mass fraction in a second region of the CoFeB body which adjoins an interface of the free magnetic layer with the cap layer.

4. 发明授权

US10804460B2 Device, system and method for improved magnetic anisotropy of a magnetic tunnel junction 有权
公开(公告)号：US10804460B2
公开(公告)日：2020-10-13
申请号：US16097801
申请日：2016-07-01
申请人： MD Tofizur Rahman , Christopher J. Wiegand , Brian Maertz , Daniel G. Ouellette , Kaan Oguz , Brian S. Doyle , Mark L. Doczy , Daniel B. Bergstrom , Justin S. Brockman , Oleg Golonzka , Tahir Ghani , Intel Corporation
发明人： MD Tofizur Rahman , Christopher J. Wiegand , Brian Maertz , Daniel G. Ouellette , Kevin P. O'Brien , Kaan Oguz , Brian S. Doyle , Mark L. Doczy , Daniel B. Bergstrom , Justin S. Brockman , Oleg Golonzka , Tahir Ghani
IPC分类号： H01L29/82 , H01L43/12 , H01L43/08 , H01L43/10 , G11C11/16 , H01L43/02
摘要： Material layer stack structures to provide a magnetic tunnel junction (MTJ) having improved perpendicular magnetic anisotropy (PMA) characteristics. In an embodiment, a free magnetic layer of the material layer stack is disposed between a tunnel barrier layer and a cap layer of magnesium oxide (Mg). The free magnetic layer includes a Cobalt-Iron-Boron (CoFeB) body substantially comprised of a combination of Cobalt atoms, Iron atoms and Boron atoms. A first Boron mass fraction of the CoFeB body is equal to or more than 25% (e.g., equal to or more than 27%) in a first region which adjoins an interface of the free magnetic layer with the tunnel barrier layer. In another embodiment, the first Boron mass fraction is more than a second Boron mass fraction in a second region of the CoFeB body which adjoins an interface of the free magnetic layer with the cap layer.

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