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1. 发明授权

US06689668B1 Methods to improve density and uniformity of hemispherical grain silicon layers 失效
标题翻译：提高半球形硅层密度和均匀性的方法
公开(公告)号：US06689668B1
公开(公告)日：2004-02-10
申请号：US09652650
申请日：2000-08-31
申请人： Mohamed el-Hamdi , Tony T. Phan , Luther Hendrix , Bradley T. Moore
发明人： Mohamed el-Hamdi , Tony T. Phan , Luther Hendrix , Bradley T. Moore
IPC分类号： H01L2120
CPC分类号： H01L28/84 , H01L27/10852
摘要： Various methods are provided of forming capacitor electrodes for integrated circuit memory cells in which out-diffusion of dopant from doped silicon layers is controlled by deposition of barrier layers, such as layers of undoped silicon and/or oxide. In one aspect, a method of forming hemispherical grain silicon on a substrate is provided that includes forming a first doped silicon layer on the substrate and a first barrier layer on the doped silicon layer. A hemispherical grain polysilicon source layer is formed on the first barrier layer and a hemispherical grain silicon layer on the hemispherical grain polysilicon source layer. By controlling out-diffusion of dopant, HSG grain size, density and uniformity, as well as DRAM memory cell capacitance, may be enhanced, while at the same time maintaining reactor throughput.
摘要翻译：提供了形成用于集成电路存储单元的电容器电极的各种方法，其中通过沉积阻挡层（例如未掺杂的硅和/或氧化物层）来控制来自掺杂硅层的掺杂剂的外扩散。一方面，提供一种在衬底上形成半球形晶粒硅的方法，其包括在衬底上形成第一掺杂硅层和在掺杂硅层上形成第一势垒层。半球形晶粒多晶硅源层形成在半球形晶粒多晶硅源层上的第一势垒层和半球状晶粒硅层上。通过控制掺杂剂的扩散，可以提高HSG晶粒尺寸，密度和均匀性以及DRAM存储单元电容，同时保持反应器的生产量。

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