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1. 发明授权

US07014702B2 Method and apparatus for preparation of binary and higher order compounds and devices fabricated using same 失效
标题翻译：制备二元和更高级化合物的方法和装置以及使用其制造的器件
公开(公告)号：US07014702B2
公开(公告)日：2006-03-21
申请号：US10296909
申请日：2001-05-30
申请人： Andrea Zappettini , Lucio Zanotti , Mingzheng Zha , Francesco Bissoli
发明人： Andrea Zappettini , Lucio Zanotti , Mingzheng Zha , Francesco Bissoli
IPC分类号： C30B1/02
CPC分类号： C30B11/00 , C30B23/00 , C30B23/002 , C30B29/48
摘要： A heat treatment chamber (30) is provided comprising a treatment region containing a charge (5) of compound material comprising a plurality of n atomic species, each atomic species being associated with at least one gas species. The chamber (30) is placed in a furnace (7). The chamber has a gas permeable barrier, constituted by a plug (4) and wadding (6), which partially encloses the treatment region. The barrier serves as an effusive hole to inhibit, but not prevent, gas vapour release, thereby to elevate the gas vapour pressure in the treatment region. Application of inert gas through a valve (8) is also used to increase background pressure in the treatment region during heat treatment. The elevated gas pressures present in the treatment region during treatment are measurable in an absorption cell (3) adjacent to the treatment region. It is thus possible to monitor the gas pressures during heat treatment and thereby stop the heat treatment once a desired charge stoichiometry is achieved. This improves over prior art heat treatment which is carried out in vacuum and thus precludes optical absorption measurement of the gas pressures during heat treatment.
摘要翻译：提供了一种热处理室（30），其包括含有包含多个n原子物质的复合材料的电荷（5）的处理区域，每个原子物质与至少一种气体物质相关联。室（30）放置在炉（7）中。腔室具有气体渗透屏障，由塞子（4）和填塞物（6）构成，其部分地包围处理区域。阻挡层用作抑制气体蒸气释放而不是防止气体蒸发的渗出孔，从而提高处理区域中的气体蒸汽压力。惰性气体通过阀门（8）的应用也用于在热处理过程中增加处理区域的背景压力。处理期间处理区域中存在的升高的气体压力可在与处理区域相邻的吸收池（3）中测量。因此，可以在热处理期间监测气体压力，从而一旦达到所需的电荷化学计量即可停止热处理。这比在真空中进行的现有技术的热处理改进，因此排除热处理期间气体压力的光吸收测量。

2. 发明授权

US4776971A Gallium arsenide single crystals with low dislocation density and high purity 失效
标题翻译：砷化镓单晶，位错密度低，纯度高
公开(公告)号：US4776971A
公开(公告)日：1988-10-11
申请号：US867514
申请日：1986-05-28
申请人： Adriano Mattera , Roberto Fornari , Renato Magnanini , Carlo Paorici , Lucio Zanotti , Giovanni Zuccalli
发明人： Adriano Mattera , Roberto Fornari , Renato Magnanini , Carlo Paorici , Lucio Zanotti , Giovanni Zuccalli
IPC分类号： C30B29/42 , C30B15/00 , C30B27/02 , H01L21/18 , H01L21/208 , C30B15/04 , C30B15/20
CPC分类号： C30B15/00 , C30B29/42
摘要： Undoped GaAs single crystals with low dislocation density, low impurity content, 0.20-1 Kg in weight and constant diameter of 1"-2" (inches), said single crystals being obtained with LEC technology at low or high pressure with synthesis of the polycrystal in situ and subsequent growth of the single crystal.
摘要翻译：未掺杂的GaAs单晶具有低位错密度，低杂质含量，重量为0.20-1Kg，1“-2”（英寸）恒定直径，所述单晶在低压或高压下用LEC技术获得，合成多晶原位和随后的单晶生长。

3. 发明授权

US5023801A Programmable - voltage - generator interface for decreasing the minimum voltage step 失效
标题翻译：可编程 - 电压 - 发生器接口，用于降低最小电压阶跃
公开(公告)号：US5023801A
公开(公告)日：1991-06-11
申请号：US323172
申请日：1989-03-15
申请人： Adriano Mattera , Roberto Fornari , Renato Magnanini , Carolo Paorici , Lucio Zanotti , Giovanni Zuccalli
发明人： Adriano Mattera , Roberto Fornari , Renato Magnanini , Carolo Paorici , Lucio Zanotti , Giovanni Zuccalli
IPC分类号： G05B19/02 , G05D23/19 , G06G7/14
CPC分类号： G06G7/14 , G05D23/1904
摘要： An interface circuit to the output of a programmable voltage ramp generator for decreasing the minimum voltage step of such a generator having two voltage channels and a minimum voltage step greater than 1 millivolt. The interface circuit receives an input from each of the two voltage channels (V.sub.2, V.sub.3), along with an inserted voltage (V.sub.1). The circuit includes a summing amplifier for (i) compressing the minimum voltage step from one voltage channel (V.sub.2) by a factor equal to or greater than such minimum voltage step, (ii) adding the voltage from the other channel (V.sub.3) to the compressed voltage, and (iii) subtracting the inserted voltage (V.sub.1) (or adding an inserted voltage which is negative). The inserted voltage (V.sub.1) is equal in magnitude to the maximum output value from the voltage channel that has the voltage compressed (V.sub.2). The output of the summing amplifier (V.sub.out) may be represented by:V.sub.out =(V.sub.3 /X)+(V.sub.2 /Y)+(V.sub.1 /Z)where X, Y, Z=attenuation or amplication factors. The interface circuit decreases the minimum voltage step at channel V.sub.2 by a factor Y down to a minimum voltage step of 1 millivolt or less.
摘要翻译：一个可编程电压斜坡发生器的输出的接口电路，用于减小具有两个电压通道的这种发电机的最小电压阶跃，以及大于1毫伏的最小电压步长。接口电路接收来自两个电压通道（V2，V3）中的每一个的输入以及插入的电压（V1）。该电路包括一个加法放大器，用于（i）将来自一个电压通道（V2）的最小电压阶跃压缩等于或大于该最小电压阶跃的因子，（ii）将来自另一个通道（V3）的电压加到压缩电压，以及（iii）减去插入电压（V1）（或加上为负的插入电压）。插入电压（V1）的大小与从压缩电压（V2）的电压通道的最大输出值相等。求和放大器（Vout）的输出可以由下式表示：Vout =（V3 / X）+（V2 / Y）+（V1 / Z）其中X，Y，Z =衰减或放大因子。接口电路将通道V2处的最小电压阶降低到一个1毫伏或更小的最小电压步长。

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