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1. 发明授权

US5110755A Process for forming a component insulator on a silicon substrate 失效
标题翻译：在硅衬底上形成部件绝缘体的工艺
公开(公告)号：US5110755A
公开(公告)日：1992-05-05
申请号：US460703
申请日：1990-01-04
申请人： Li-Shu Chen , Rathindra N. Ghoshtagore , Alfred P. Turley , Louis A. Yannone
发明人： Li-Shu Chen , Rathindra N. Ghoshtagore , Alfred P. Turley , Louis A. Yannone
IPC分类号： H01L21/306 , H01L21/762
CPC分类号： H01L21/76264 , H01L21/306 , H01L21/7627
摘要： A process for forming an insulating layer of silicon dioxide in a silicon substrate that surrounds and electrically insulates a semiconductor device is disclosed herein. The process comprises the steps of forming a recess on the outer surface of the silicon substrate that encompasses the site of the semiconductor device by photo-resist patterned reactive ion etching, and then removing silicon on the surface of the resulting recess whose crystal structure has been damaged by the reactive ion etching. Next, dopant atoms are selectively deposited on the surface of the recess so that the surface of the recess might be rendered into a porous layer of silicon when immersed in hydrogen fluoride and subjected to an electrical current. Prior to the porousification step, silicon is epitaxially grown within the walls of the recess to form the site for a semiconductor device. The substrate is then immersed in hydrogen fluoride while a current is conducted through it in order to porousify the silicon between the device island and the rest of the substrate. Finally, the substrate is thermally oxidized in order to render the porous layer of silicon into a insulating layer of silicon dioxide. The provision of such individual insulating layers around each of the devices on the substrate allows the manufacture of a high density and radiation hard semiconductor array that is not susceptible to electrical current leakage between components.
摘要翻译：本文公开了一种在半导体器件中包围并电绝缘的硅衬底中形成二氧化硅绝缘层的工艺。该方法包括以下步骤：在硅衬底的外表面上形成通过光致抗蚀剂图案化反应离子蚀刻包围半导体器件的位置的凹槽，然后在晶体结构已经形成的凹槽的表面上除去硅被反应离子蚀刻损坏。接下来，掺杂剂原子被选择性地沉积在凹部的表面上，使得当浸入氟化氢中并且经受电流时，凹槽的表面可能变成多孔硅层。在多孔化步骤之前，在凹槽的壁内外延生长硅以形成半导体器件的部位。然后将衬底浸入氟化氢中，同时通过电流进行电流以使器件岛和衬底的其余部分之间的硅多孔化。最后，将基底热氧化，以使硅的多孔层成为二氧化硅的绝缘层。在衬底上的每个器件周围提供这些单独的绝缘层允许制造不易受组件之间的电流泄漏敏感的高密度和辐射硬的半导体阵列。

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