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    • 2. 发明授权
    • Recrystallization method of polysilicon film in thin film transistor
    • 薄膜晶体管中多晶硅薄膜的重结晶方法
    • US06432758B1
    • 2002-08-13
    • US09781431
    • 2001-02-13
    • Huang-Chung ChengChing-Wei LinLi-Jing Cheng
    • Huang-Chung ChengChing-Wei LinLi-Jing Cheng
    • H01L2100
    • H01L21/00H01L29/66757H01L29/78675
    • The present invention proposes a crystallization method of the poly-Si thin film in a thin film transistor. A substrate having an insulator layer is provided. An amorphous silicon layer or a micro-crystalline silicon layer having two thickness is first formed on the insulator layer. The region of thinner is defined as the channel region of the TFT, while the region of thicker can be defined as the source/drain regions of the TFT. Next, an excimer laser is used for crystallization. During the excimer laser irradiation, the amorphous silicon layer of thinner is completely melted, and the amorphous silicon layer of thicker is partially melted. The partially melted amorphous silicon layer is used as crystallization seeds. Through formation of the temperature gradient between the completely melted amorphous silicon layer and the partially melted amorphous silicon layer, longitudinal growth of silicon grains in the completely melted region will be performed to grow a poly-Si layer having good homogeneity and large grains.
    • 本发明提出了薄膜晶体管中的多晶硅薄膜的结晶方法。 提供具有绝缘体层的基板。 首先在绝缘体层上形成具有两个厚度的非晶硅层或微晶硅层。 较薄的区域被定义为TFT的沟道区域,而较厚的区域可以被定义为TFT的源极/漏极区域。 接下来,使用准分子激光器进行结晶。 在准分子激光照射期间,较薄的非晶硅层完全熔化,较厚的非晶硅层部分熔化。 部分熔融的非晶硅层用作结晶种子。 通过形成完全熔融的非晶硅层和部分熔融的非晶硅层之间的温度梯度,将完成完全熔融区域中的硅晶粒的纵向生长,以生长具有良好均匀性和大晶粒的多晶硅层。