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1. 发明授权

US06747357B2 Dielectric device having multi-layer oxide artificial lattice with lattice directional feature 有权
标题翻译：具有晶格方向特征的多层氧化物人造晶格的介电器件
公开(公告)号：US06747357B2
公开(公告)日：2004-06-08
申请号：US10135764
申请日：2002-05-01
申请人： Jaichan Lee , Juho Kim , Leejun Kim , Young Sung Kim
发明人： Jaichan Lee , Juho Kim , Leejun Kim , Young Sung Kim
IPC分类号： H01L2348
CPC分类号： H01L28/56 , C23C14/088 , C23C14/28 , H01L21/02197 , H01L21/022 , H01L21/02266 , H01L21/31691 , H01L29/516
摘要： A dielectric device has a multi-layer oxide artificial lattice. The artificial lattice is a stacked structure with a plurality of dielectrics. The dielectric film is deposited at a single atomic layer thickness or at a unit lattice thickness. The dielectric film is formed by repeatedly depositing with layer-by-layer growth process at least two dielectric materials having dielectric constant different from each other at least one time in a range of the single atomic layer thickness to 20 nm or by depositing at least two dielectric materials in a predetermined alignment adapted for a functional device, thereby forming one artificial lattice having an identical directional feature. By utilizing the stress applied to an interfacial surface of the consisting layers in the artificial oxide lattice, the dielectric constant and tunability are greatly improved, so the artificial lattice can be adapted for high-speed switching and high-density semiconductor devices and high-frequency response telecommunication devices. In addition, the size of devices can be compacted and a low voltage drive can be achieved.
摘要翻译：电介质器件具有多层氧化物人造晶格。人造晶格是具有多个电介质的堆叠结构。电介质膜以单一原子层厚度或单位晶格厚度沉积。电介质膜通过以逐层生长方法重复沉积至少两种在单原子层厚度至20nm的范围内至少一次彼此不同的介电常数的电介质材料，或通过沉积至少两个以适于功能器件的预定对准的介电材料，从而形成具有相同方向特征的一个人造晶格。通过利用施加在人造氧化物晶格中的组成层的界面的应力，介电常数和可调性大大提高，因此人造晶格可适用于高速开关和高密度半导体器件和高频响应电信设备。此外，可以压缩设备的尺寸并且可以实现低电压驱动。

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