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1. 发明授权

US07488057B2 Piezoelectric ink jet printer head and its manufacturing process 有权
标题翻译：压电式喷墨打印头及其制造工艺
公开(公告)号：US07488057B2
公开(公告)日：2009-02-10
申请号：US10561332
申请日：2004-05-11
申请人： Young June Cho , Chul Soo Byun , Moon Soo Park , Kyung Tae Kang , Young Seok Choi , Il Yong Chung , Jaichan Lee
发明人： Young June Cho , Chul Soo Byun , Moon Soo Park , Kyung Tae Kang , Young Seok Choi , Il Yong Chung , Jaichan Lee
IPC分类号： B41J2/045 , H01L41/22
CPC分类号： B41J2/1626 , B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1631 , B41J2/1632 , B41J2/1642 , B41J2/1646 , B41J2002/14362 , B41J2202/03 , Y10T29/42
摘要： Disclosed is a piezoelectric ink jet printer head in which a chamber and an ink storage are integrally formed. A process for manufacturing the ink jet printer head is also disclosed. The ink jet printer head formed by laminating a plurality of plates includes: a) an actuator portion being composed of upper and lower electrodes, a piezoelectric plate inserted between the upper and lower electrodes, a protection layer placed on the upper electrode, and a resilient plate disposed beneath the lower electrode; b) an ink passage portion composed of a spacer disposed beneath the resilient plate and forming a side portion of a chamber, a channel plate disposed beneath the spacer, the channel plate forming an ink passage in one side of the chamber and simultaneously expanding the chamber, and a nozzle plate disposed beneath the channel plate, the nozzle plate forming the lower side of the chamber and having a nozzle communicating with the chamber; and c) an ink-supplying portion formed by a through-hole reaching the ink passage of the channel plate through the actuator portion and the spacer.
摘要翻译：公开了一种压电喷墨打印机头，其中腔室和墨水储存器一体形成。还公开了一种用于制造喷墨打印机头的方法。通过层叠多个板形成的喷墨打印头包括：a）由上下电极构成的致动器部分，插入在上电极和下电极之间的压电板，设置在上电极上的保护层，以及弹性设置在下电极下方的板; b）墨水通道部分，其由设置在弹性板下方并形成腔室的侧部的间隔件，设置在间隔件下方的通道板组成，通道板在腔室的一侧形成墨水通道，同时使腔室以及设置在所述通道板下方的喷嘴板，所述喷嘴板形成所述室的下侧，并且具有与所述室连通的喷嘴; 以及c）由通过所述致动器部分和所述间隔件到达所述通道板的油墨通道的通孔形成的供墨部分。

2. 发明申请

US20070152253A1 Ferroelectric Oxide Artificial Lattice, Method For Fabricating The Same And Ferroelectric Storage Medium For Ultrahigh Density Data Storage Device 有权
标题翻译：铁电氧化物人造晶格，用于制造相同的方法和用于超高密度数据存储装置的铁电存储介质
公开(公告)号：US20070152253A1
公开(公告)日：2007-07-05
申请号：US11420544
申请日：2006-05-26
申请人： Jaichan Lee , Taekjib Choi
发明人： Jaichan Lee , Taekjib Choi
IPC分类号： H01L29/94 , H01L21/00
CPC分类号： H01L21/02197 , H01L21/022 , H01L21/02266 , H01L21/3142 , H01L21/31691
摘要： The present invention is related to a ferroelectric storage medium for ultrahigh density data storage device and a method for fabricating the same. A supercell having high anisotropy is formed by controlling crystal structure and symmetry of unit structure (supercell) of artificial lattice by using an ordered alignment of predetermined ions having orientation of (perpendicular) deposition direction. Unit atomic layers of oxides having different polarization characteristic are deposited so that the supercell itself shows electric polarization having only two, upward and downward directions as one block of supercell having single-directional polarization. Oxide artificial lattices can be formed so as to have solely 180 degree domain structure, thus a single electric domain having improved anisotropic characteristic can be formed, thereby allowing capability of ultrahigh density data storage and long term data retention.
摘要翻译：本发明涉及一种用于超高密度数据存储装置的铁电存储介质及其制造方法。通过使用具有（垂直）沉积方向取向的预定离子的有序排列来控制人造晶格的单元结构（超晶胞）的晶体结构和对称性，形成具有高各向异性的超晶胞。沉积具有不同偏振特性的氧化物的单元原子层，使得超单元本身显示仅具有两个上，下方向的电极化，作为具有单向极化的超单元的一个块。氧化物人造晶格可以形成为仅具有180度域结构，因此可以形成具有改善的各向异性特征的单个电畴，从而允许超高密度数据存储和长期数据保留的能力。

3. 发明授权

US07741633B2 Ferroelectric oxide artificial lattice, method for fabricating the same and ferroelectric storage medium for ultrahigh density data storage device 有权
标题翻译：铁电氧化物人造晶格，其制造方法和用于超高密度数据存储装置的铁电存储介质
公开(公告)号：US07741633B2
公开(公告)日：2010-06-22
申请号：US11420544
申请日：2006-05-26
申请人： Jaichan Lee , Taekjib Choi
发明人： Jaichan Lee , Taekjib Choi
IPC分类号： H01L31/00
CPC分类号： H01L21/02197 , H01L21/022 , H01L21/02266 , H01L21/3142 , H01L21/31691
摘要： The present invention is related to a ferroelectric storage medium for ultrahigh density data storage device and a method for fabricating the same. A supercell having high anisotropy is formed by controlling crystal structure and symmetry of unit structure (supercell) of artificial lattice by using an ordered alignment of predetermined ions having orientation of (perpendicular) deposition direction. Unit atomic layers of oxides having different polarization characteristic are deposited so that the supercell itself shows electric polarization having only two, upward and downward directions as one block of supercell having single-directional polarization. Oxide artificial lattices can be formed so as to have solely 180 degree domain structure, thus a single electric domain having improved anisotropic characteristic can be formed, thereby allowing capability of ultrahigh density data storage and long term data retention.
摘要翻译：本发明涉及一种用于超高密度数据存储装置的铁电存储介质及其制造方法。通过使用具有（垂直）沉积方向取向的预定离子的有序排列来控制人造晶格的单元结构（超晶胞）的晶体结构和对称性，形成具有高各向异性的超晶胞。沉积具有不同偏振特性的氧化物的单元原子层，使得超单元本身显示仅具有两个上，下方向的电极化，作为具有单向极化的超单元的一个块。氧化物人造晶格可以形成为仅具有180度域结构，因此可以形成具有改善的各向异性特征的单个电畴，从而允许超高密度数据存储和长期数据保留的能力。

4. 发明授权

US06747357B2 Dielectric device having multi-layer oxide artificial lattice with lattice directional feature 有权
标题翻译：具有晶格方向特征的多层氧化物人造晶格的介电器件
公开(公告)号：US06747357B2
公开(公告)日：2004-06-08
申请号：US10135764
申请日：2002-05-01
申请人： Jaichan Lee , Juho Kim , Leejun Kim , Young Sung Kim
发明人： Jaichan Lee , Juho Kim , Leejun Kim , Young Sung Kim
IPC分类号： H01L2348
CPC分类号： H01L28/56 , C23C14/088 , C23C14/28 , H01L21/02197 , H01L21/022 , H01L21/02266 , H01L21/31691 , H01L29/516
摘要： A dielectric device has a multi-layer oxide artificial lattice. The artificial lattice is a stacked structure with a plurality of dielectrics. The dielectric film is deposited at a single atomic layer thickness or at a unit lattice thickness. The dielectric film is formed by repeatedly depositing with layer-by-layer growth process at least two dielectric materials having dielectric constant different from each other at least one time in a range of the single atomic layer thickness to 20 nm or by depositing at least two dielectric materials in a predetermined alignment adapted for a functional device, thereby forming one artificial lattice having an identical directional feature. By utilizing the stress applied to an interfacial surface of the consisting layers in the artificial oxide lattice, the dielectric constant and tunability are greatly improved, so the artificial lattice can be adapted for high-speed switching and high-density semiconductor devices and high-frequency response telecommunication devices. In addition, the size of devices can be compacted and a low voltage drive can be achieved.
摘要翻译：电介质器件具有多层氧化物人造晶格。人造晶格是具有多个电介质的堆叠结构。电介质膜以单一原子层厚度或单位晶格厚度沉积。电介质膜通过以逐层生长方法重复沉积至少两种在单原子层厚度至20nm的范围内至少一次彼此不同的介电常数的电介质材料，或通过沉积至少两个以适于功能器件的预定对准的介电材料，从而形成具有相同方向特征的一个人造晶格。通过利用施加在人造氧化物晶格中的组成层的界面的应力，介电常数和可调性大大提高，因此人造晶格可适用于高速开关和高密度半导体器件和高频响应电信设备。此外，可以压缩设备的尺寸并且可以实现低电压驱动。

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