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US06600333B1 Method and test structure for characterizing sidewall damage in a semiconductor device 失效
标题翻译：用于表征半导体器件中侧壁损伤的方法和测试结构
公开(公告)号：US06600333B1
公开(公告)日：2003-07-29
申请号：US09501958
申请日：2000-02-10
申请人： Jeremy I. Martin , Nicholas J. Kepler , Larry L. Zhao
发明人： Jeremy I. Martin , Nicholas J. Kepler , Larry L. Zhao
IPC分类号： G01R2726
CPC分类号： H01L22/34 , G01R31/2884
摘要： A test circuit includes a wafer, an insulative layer formed on the wafer, and a plurality of test structures formed in the insulative layer. Each of the test structures comprises a first comb having a first plurality of fingers and a second comb having a second plurality of fingers. The first and second pluralities of fingers are interleaved to define a finger spacing between the first and second pluralities of fingers. The finger spacing in a first one of the test structures being different than the finger spacing in a second one of the test structures. A method for characterizing damage in a semiconductor device includes providing a wafer having an insulative layer and a plurality of test structures formed in the insulative layer. The test structures have different geometries. An electrical characteristic of first and second test structures of the plurality of test structures is determined. The electrical characteristics of the first and second test structures is compared. Damage to the insulative layer is characterized based on the comparison.
摘要翻译：测试电路包括晶片，形成在晶片上的绝缘层，以及形成在绝缘层中的多个测试结构。每个测试结构包括具有第一多个指状物的第一梳子和具有第二多个指状物的第二梳子。手指的第一和第二多个交织以限定第一和第二多个手指之间的手指间隔。测试结构中第一个测试结构中的手指间距不同于第二个测试结构中的手指间距。用于表征半导体器件中的损伤的方法包括提供具有绝缘层的晶片和形成在绝缘层中的多个测试结构。测试结构具有不同的几何形状。确定多个测试结构的第一和第二测试结构的电特性。比较第一和第二测试结构的电气特性。基于比较，对绝缘层的损伤进行了表征。

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