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1. 发明授权

US07636904B2 Locating critical dimension(s) of a layout feature in an IC design by modeling simulated intensities 有权
标题翻译：通过建模模拟强度来确定IC设计中布局特征的关键维度
公开(公告)号：US07636904B2
公开(公告)日：2009-12-22
申请号：US11584356
申请日：2006-10-20
申请人： Hua Song , Lantiang Wang , ZongWu Tang
发明人： Hua Song , Lantiang Wang , ZongWu Tang
IPC分类号： G06F17/50
CPC分类号： G06F17/5081
摘要： A computer is programmed to perform lithography simulation at a number of locations in a transverse direction relative to a length of a feature of an IC design, to obtain simulated intensities at the locations. The computer is further programmed to determine constants of a predetermined formula that models a trend of the simulated intensities as a function of distance (in the transverse direction), by curve-fitting. The computer is also programmed to compute a value (“CD predictor”) based on the just-determined constants, the formula and a known threshold intensity for a given position along the feature's length. The just-described process, of lithography-simulation, followed by curve-fitting, followed by CD predictor computation, is repeatedly performed to obtain a number of CD predictors at a corresponding number of positions along the feature's length. The CD predictors are used to identify a position of a critical dimension, for use in, for example, layout verification.
摘要翻译：计算机被编程为在相对于IC设计的特征的长度的横向方向上的多个位置处执行光刻模拟，以在位置处获得模拟的强度。计算机还被编程为通过曲线拟合来确定模拟强度的趋势作为距离（在横向方向上）的函数的预定公式的常数。计算机还被编程为基于刚刚确定的常数，公式和沿特征长度的给定位置的已知阈值强度来计算值（“CD预测器”）。重复执行刚才描述的光刻仿真过程，随后进行曲线拟合，随后进行CD预测器计算，以在沿着特征长度的相应位置的数量处获得多个CD预测器。 CD预测器用于识别临界尺寸的位置，用于例如布局验证。

2. 发明申请

US20080109766A1 Locating critical dimension(s) of a layout feature in an IC design by modeling simulated intensities 有权
标题翻译：通过建模模拟强度来确定IC设计中布局特征的关键维度
公开(公告)号：US20080109766A1
公开(公告)日：2008-05-08
申请号：US11584356
申请日：2006-10-20
申请人： Hua Song , Lantiang Wang , ZongWu Tang
发明人： Hua Song , Lantiang Wang , ZongWu Tang
IPC分类号： G06F17/50
CPC分类号： G06F17/5081
摘要： A computer is programmed to perform lithography simulation at a number of locations in a transverse direction relative to a length of a feature of an IC design, to obtain simulated intensities at the locations. The computer is further programmed to determine constants of a predetermined formula that models a trend of the simulated intensities as a function of distance (in the transverse direction), by curve-fitting. The computer is also programmed to compute a value (“CD predictor”) based on the just-determined constants, the formula and a known threshold intensity for a given position along the feature's length. The just-described process, of lithography-simulation, followed by curve-fitting, followed by CD predictor computation, is repeatedly performed to obtain a number of CD predictors at a corresponding number of positions along the feature's length. The CD predictors are used to identify a position of a critical dimension, for use in, for example, layout verification.
摘要翻译：计算机被编程为在相对于IC设计的特征的长度的横向方向上的多个位置处执行光刻模拟，以在位置处获得模拟的强度。计算机还被编程为通过曲线拟合来确定模拟强度的趋势作为距离（在横向方向上）的函数的预定公式的常数。计算机还被编程为基于刚刚确定的常数，公式和沿特征长度的给定位置的已知阈值强度来计算值（“CD预测器”）。重复执行刚才描述的光刻仿真过程，随后进行曲线拟合，随后进行CD预测器计算，以在沿着特征长度的相应位置的数量处获得多个CD预测器。 CD预测器用于识别临界尺寸的位置，用于例如布局验证。

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