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1. 发明公开

EP2822892A2 ATOMIC LAYER DEPOSITION STRENGTHENING MEMBERS AND METHOD OF MANUFACTURE 有权转让
标题翻译：加固进行核位置分离及方法元素及其制造
公开(公告)号：EP2822892A2
公开(公告)日：2015-01-14
申请号：EP13711519.2
申请日：2013-03-08
申请人： Robert Bosch GmbH , Yama, Gary , Purkl, Fabian , Liger, Matthieu , Illing, Matthias
发明人： YAMA, Gary , PURKL, Fabian , LIGER, Matthieu , ILLING, Matthias
IPC分类号： B81C1/00 , G01J5/02 , G01J5/20 , H01L27/146 , B81B3/00
CPC分类号： B81C1/00039 , B81B3/007 , B81B2201/0207 , B81B2203/0307 , B81C2201/0181 , G01J5/023 , H01L27/14649 , H01L27/14683
摘要： In one embodiment, a method of forming a semiconductor device includes providing a substrate, forming a sacrificial layer above the substrate layer, forming a first trench in the sacrificial layer, forming a first sidewall layer with a thickness of less than about 50 nm on a first sidewall of the first trench using atomic layer deposition (ALD), and removing the sacrificial layer.

2. 发明公开

EP2879988A2 SUBSTRATE WITH MULTIPLE ENCAPSULATED DEVICES 有权
标题翻译：基质麻醉剂VERKAPSELTEN VORRICHTUNGEN
公开(公告)号：EP2879988A2
公开(公告)日：2015-06-10
申请号：EP13829083.8
申请日：2013-07-31
申请人： Robert Bosch GmbH , Chen, Po-Jui , Yama, Gary , Liger, Matthieu , Graham, Andrew
发明人： CHEN, Po-Jui , YAMA, Gary , LIGER, Matthieu , GRAHAM, Andrew
IPC分类号： B81B7/02 , B81C1/00
CPC分类号： H01L29/84 , B81B2201/0235 , B81B2201/0242 , B81B2207/015 , B81C1/0023 , B81C2201/0197 , B81C2203/0136 , B81C2203/0771 , G01C19/5783 , G01P15/0802 , G01P15/18 , H01L29/66007
摘要： A device with multiple encapsulated functional layers, includes a substrate, a first functional layer positioned above a top surface of the substrate, the functional layer including a first device portion, a first encapsulating layer encapsulating the first functional layer, a second functional layer positioned above the first encapsulating layer, the second functional layer including a second device portion, and a second encapsulating layer encapsulating the second functional layer.
摘要翻译：具有多个封装功能层的器件包括衬底，位于衬底顶表面上方的第一功能层，功能层包括第一器件部分，封装第一功能层的第一封装层，以及位于第一功能层上方的第二功能层第一封装层，第二功能层包括第二器件部分和封装第二功能层的第二封装层。

3. 发明专利

DK2879988T3 HUSGENNEMFØRING (KABELFORSKRUNING) 未知
公开(公告)号：DK2879988T3
公开(公告)日：2018-06-14
申请号：DK13829083
申请日：2013-07-31
申请人： BOSCH GMBH ROBERT , CHEN PO JUI , LIGER MATTHIEU , GRAHAM ANDREW , YAMA GARY
发明人： CHEN PO-JUI , YAMA GARY , LIGER MATTHIEU , GRAHAM ANDREW
IPC分类号： B81B7/02 , B81C1/00 , G01C19/5783 , G01P15/08 , G01P15/18

4. 发明授权

EP2822892B1 ATOMIC LAYER DEPOSITION STRENGTHENING MEMBERS AND METHOD OF MANUFACTURE 有权转让
公开(公告)号：EP2822892B1
公开(公告)日：2019-06-19
申请号：EP13711519.2
申请日：2013-03-08
申请人： Robert Bosch GmbH , Yama, Gary , Purkl, Fabian , Liger, Matthieu , Illing, Matthias
发明人： YAMA, Gary , PURKL, Fabian , LIGER, Matthieu , ILLING, Matthias
IPC分类号： B81C1/00 , G01J5/02 , G01J5/20 , H01L27/146 , B81B3/00

5. 发明授权

EP2879988B1 SUBSTRATE WITH MULTIPLE ENCAPSULATED DEVICES 有权
标题翻译：带有多个封装器件的衬底
公开(公告)号：EP2879988B1
公开(公告)日：2018-04-04
申请号：EP13829083.8
申请日：2013-07-31
申请人： Robert Bosch GmbH , Chen, Po-Jui , Yama, Gary , Liger, Matthieu , Graham, Andrew
发明人： CHEN, Po-Jui , YAMA, Gary , LIGER, Matthieu , GRAHAM, Andrew
IPC分类号： B81B7/02 , B81C1/00 , G01P15/08 , G01P15/18 , G01C19/5783
CPC分类号： H01L29/84 , B81B2201/0235 , B81B2201/0242 , B81B2207/015 , B81C1/0023 , B81C2201/0197 , B81C2203/0136 , B81C2203/0771 , G01C19/5783 , G01P15/0802 , G01P15/18 , H01L29/66007
摘要： A device with multiple encapsulated functional layers, includes a substrate, a first functional layer positioned above a top surface of the substrate, the functional layer including a first device portion, a first encapsulating layer encapsulating the first functional layer, a second functional layer positioned above the first encapsulating layer, the second functional layer including a second device portion, and a second encapsulating layer encapsulating the second functional layer.

6. 发明申请

WO2005045470A2 PROLYZED-PARYLENE BASED SENSORS AND METHOD OF MANUFACTURE 审中-公开
标题翻译：基于丙烯酰基的传感器及其制造方法
公开(公告)号：WO2005045470A2
公开(公告)日：2005-05-19
申请号：PCT/US2004/035985
申请日：2004-10-27
申请人： CALIFORNIA INSTITUTE OF TECHNOLOGY , TAI, Yu-Chong , LIGER, Matthieu , MISERENDINO, Scott
发明人： TAI, Yu-Chong , LIGER, Matthieu , MISERENDINO, Scott
IPC分类号： G01T
CPC分类号： G01J5/20 , H01L31/101
摘要： A method (and resulting structure) for fabricating a sensing device. The method includes providing a substrate comprising a surface region and forming an insulating material overlying the surface region. The method also includes forming a film of carbon based material overlying the insulating material and treating to the film of carbon based material to pyrolyzed the carbon based material to cause formation of a film of substantially carbon based material having a resistivity ranging within a predetermined range. The method also provides at least a portion of the pyrolyzed carbon based material in a sensor application and uses the portion of the pyrolyzed carbon based material in the sensing application. In a specific embodiment, the sensing application is selected from chemical, humidity, piezoelectric, radiation, mechanical strain or temperature.
摘要翻译：一种用于制造感测装置的方法（和结果）。该方法包括提供包括表面区域并形成覆盖表面区域的绝缘材料的基板。该方法还包括形成覆盖绝缘材料的碳基材料薄膜，并处理碳基材料薄膜以热解碳基材料，以形成电阻率范围在预定范围内的基本上碳基材料的薄膜。该方法还在传感器应用中提供热解碳基材料的至少一部分，并且在感测应用中使用部分热解碳基材料。在具体实施例中，感测应用选自化学，湿度，压电，辐射，机械应变或温度。

7. 发明申请

WO2014062273A2 SUBSTRATE WITH MULTIPLE ENCAPSULATED DEVICES 审中-公开
标题翻译：带有多个封装器件的衬底
公开(公告)号：WO2014062273A2
公开(公告)日：2014-04-24
申请号：PCT/US2013/052974
申请日：2013-07-31
申请人： ROBERT BOSCH GMBH , CHEN, Po-Jui , YAMA, Gary , LIGER, Matthieu , GRAHAM, Andrew
发明人： CHEN, Po-Jui , YAMA, Gary , LIGER, Matthieu , GRAHAM, Andrew
IPC分类号： B81B7/02 , B81C1/00
CPC分类号： H01L29/84 , B81B2201/0235 , B81B2201/0242 , B81B2207/015 , B81C1/0023 , B81C2201/0197 , B81C2203/0136 , B81C2203/0771 , G01C19/5783 , G01P15/0802 , G01P15/18 , H01L29/66007
摘要： A device with multiple encapsulated functional layers, includes a substrate, a first functional layer positioned above a top surface of the substrate, the functional layer including a first device portion, a first encapsulating layer encapsulating the first functional layer, a second functional layer positioned above the first encapsulating layer, the second functional layer including a second device portion, and a second encapsulating layer encapsulating the second functional layer.
摘要翻译：具有多个封装功能层的器件包括衬底，位于衬底的顶表面上方的第一功能层，功能层包括第一器件部分，封装第一功能的第一封装层位于第一封装层上方的第二功能层，第二功能层包括第二器件部分和封装第二功能层的第二封装层。

8. 发明申请

WO2013134592A3 ATOMIC LAYER DEPOSITION STRENGTHENING MEMBERS AND METHOD OF MANUFACTURE 审中-公开
标题翻译：原子层沉积强化元件及其制造方法
公开(公告)号：WO2013134592A3
公开(公告)日：2013-10-31
申请号：PCT/US2013029763
申请日：2013-03-08
申请人： BOSCH GMBH ROBERT , YAMA GARY , PURKL FABIAN , LIGER MATTHIEU , ILLING MATTHIAS
发明人： YAMA GARY , PURKL FABIAN , LIGER MATTHIEU , ILLING MATTHIAS
IPC分类号： B81C1/00 , B81B3/00 , G01J5/02 , G01J5/20 , H01L27/146
CPC分类号： B81C1/00039 , B81B3/007 , B81B2201/0207 , B81B2203/0307 , B81C2201/0181 , G01J5/023 , H01L27/14649 , H01L27/14683
摘要： In one embodiment, a method of forming a semiconductor device includes providing a substrate, forming a sacrificial layer above the substrate layer, forming a first trench in the sacrificial layer, forming a first sidewall layer with a thickness of less than about 50 nm on a first sidewall of the first trench using atomic layer deposition (ALD), and removing the sacrificial layer.
摘要翻译：在一个实施例中，一种形成半导体器件的方法包括提供衬底，在衬底层上方形成牺牲层，在牺牲层中形成第一沟槽，在衬底上形成厚度小于约50nm的第一侧壁层使用原子层沉积（ALD）形成第一沟槽的第一侧壁，并去除牺牲层。

9. 发明申请

WO2013134592A2 ATOMIC LAYER DEPOSITION STRENGTHENING MEMBERS AND METHOD OF MANUFACTURE 审中-公开
标题翻译：原子层沉积加强成员及其制造方法
公开(公告)号：WO2013134592A2
公开(公告)日：2013-09-12
申请号：PCT/US2013/029763
申请日：2013-03-08
申请人： ROBERT BOSCH GMBH , YAMA, Gary , PURKL, Fabian , LIGER, Matthieu , ILLING, Matthias
发明人： YAMA, Gary , PURKL, Fabian , LIGER, Matthieu , ILLING, Matthias
IPC分类号： B81C1/00
CPC分类号： B81C1/00039 , B81B3/007 , B81B2201/0207 , B81B2203/0307 , B81C2201/0181 , G01J5/023 , H01L27/14649 , H01L27/14683
摘要： In one embodiment, a method of forming a semiconductor device includes providing a substrate, forming a sacrificial layer above the substrate layer, forming a first trench in the sacrificial layer, forming a first sidewall layer with a thickness of less than about 50 nm on a first sidewall of the first trench using atomic layer deposition (ALD), and removing the sacrificial layer.
摘要翻译：在一个实施例中，形成半导体器件的方法包括提供衬底，在衬底层上形成牺牲层，在牺牲层中形成第一沟槽，形成厚度小于约50nm的第一侧壁层使用原子层沉积（ALD）的第一沟槽的第一侧壁，以及去除牺牲层。

10. 发明申请

WO2005070005A2 PYROLYZED THIN FILM CARBON 审中-公开
标题翻译：聚吡咯薄膜
公开(公告)号：WO2005070005A2
公开(公告)日：2005-08-04
申请号：PCT/US2005002254
申请日：2005-01-24
申请人： CALIFORNIA INST OF TECHN , TAI YU-CHONG , LIGER MATTHIEU , HARDER THEODORE , KONISHI SATOSHI , MISERENDINO SCOTT
发明人： TAI YU-CHONG , LIGER MATTHIEU , HARDER THEODORE , KONISHI SATOSHI , MISERENDINO SCOTT
摘要： A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.
摘要翻译：制造碳薄膜的方法包括在基材上沉积催化剂，沉积与催化剂接触的烃并热解烃。控制碳薄膜密度的方法包括将空腔蚀刻到基底中，将烃沉积到空腔中，并在空腔中热解烃以形成碳薄膜。通过改变空腔的体积来实现碳薄膜密度的控制。还提供了制备含碳图案结构的方法。碳薄膜和含碳图案结构可用于NEMS，MEMS，液相色谱和传感器装置。

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