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1. 发明申请

WO02097852A2 PLASMA ETCHING OF SILICON CARBIDE 审中-公开
标题翻译：等离子体碳化硅蚀刻
公开(公告)号：WO02097852A2
公开(公告)日：2002-12-05
申请号：PCT/US0221863
申请日：2002-03-21
申请人： LAM RES CORP , LI SI YI
发明人： LI SI YI
IPC分类号： H01J37/00 , H01L21/04 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/461 , H01L21/768
CPC分类号： H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： A process for plasma etching silicon carbide with selectivity to an overlying and/or underlying dielectric layer of material. The dielectric material can comprise silicon dioxide, silicon oxynitride, silicon nitride or various low-k dielectric materials including organic low-k materials. The etching gas includes a chlorine containing gas such as Cl 2 , an oxygen containing gas such as O 2 , and a carrier gas such as Ar. In order to achieve a desired selectivity to such dielectric materials, the plasma etch gas chemistry is selected to achieve a desired etch rate of the silicon carbide while etching the dielectric material at a slower rate. The process can be used to selectively etch a hydrogenated silicon carbide etch stop layer or silicon carbide substrate.
摘要翻译：用于等离子体蚀刻碳化硅的方法，其具有对材料的上覆和/或下层介电层的选择性。介电材料可以包括二氧化硅，氮氧化硅，氮化硅或包括有机低k材料的各种低k电介质材料。蚀刻气体包括诸如Cl 2的含氯气体，诸如O 2的含氧气体和诸如Ar的载气。为了实现对这种介电材料的期望的选择性，选择等离子体蚀刻气体化学物质以在较慢的速率蚀刻电介质材料时实现所需的碳化硅蚀刻速率。该方法可用于选择性蚀刻氢化碳化硅蚀刻停止层或碳化硅衬底。

2. 发明申请

WO02080230A2 METHOD OF PLASMA ETCHING LOW-K DIELECTRIC MATERIALS 审中-公开
标题翻译：等离子体蚀刻低K电介质材料的方法
公开(公告)号：WO02080230A2
公开(公告)日：2002-10-10
申请号：PCT/US0206648
申请日：2002-03-21
申请人： LAM RES CORP , LI SI YI , ZHU HELEN H , SADJADI S M REZA , TIETZ JAMES V , HELMER BRYAN A
发明人： LI SI YI , ZHU HELEN H , SADJADI S M REZA , TIETZ JAMES V , HELMER BRYAN A
IPC分类号： H01L21/311 , H01L21/768 , H01L
CPC分类号： H01L21/7681 , H01L21/31116 , H01L21/31138 , H01L21/76807
摘要： A semiconductor manufacturing process wherein organosilicate glass is plasma etched with selectivity to an overlying and/or underlying dielectric layer. The oxygen-free etchant gas includes a fluorocarbon reactant, a nitrogen reactant and an optional carrier gas, the fluorocarbon reactant and nitrogen reactant being supplied to the chamber at flow rates such that the fluorocarbon reactant flow rate is less than the nitrogen reactant flow rate. The etch rate of the organosilicate glass can be at least 5 times higher than that of the dielectric layer. The process is useful for etching 0.25 micron and smaller contact or via openings in forming structures such as damascene structures.
摘要翻译：半导体制造方法，其中有机硅酸盐玻璃被等离子体蚀刻，对上覆和/或下面的介电层具有选择性。无氧蚀刻剂气体包括氟碳反应物，氮反应物和任选的载气，氟烃反应物和氮反应物以流速供应到室，使得碳氟化合物反应物流速小于氮反应物流速。有机硅酸盐玻璃的蚀刻速率可以比介电层的蚀刻速率高至少5倍。该方法对于在形成结构如镶嵌结构中蚀刻0.25微米和较小的接触或通孔开口是有用的。

3. 发明申请

WO2002080230A3 METHOD OF PLASMA ETCHING LOW-K ORGANOSILICATE MATERIALS 审中-公开
公开(公告)号：WO2002080230A3
公开(公告)日：2002-10-10
申请号：PCT/US2002/006648
申请日：2002-03-21
申请人： LAM RESEARCH CORPORATION , LI, Si, Yi , ZHU, Helen, H. , SADJADI, S., M., Reza , TIETZ, James, V. , HELMER, Bryan, A.
发明人： LI, Si, Yi , ZHU, Helen, H. , SADJADI, S., M., Reza , TIETZ, James, V. , HELMER, Bryan, A.
IPC分类号： H01L21/311
摘要： A semiconductor manufacturing process wherein organosilicate glass is plasma etched with selectivity to an overlying and/or underlying dielectric layer. The oxygen-free etchant gas includes a fluorocarbon reactant, a nitrogen reactant and an optional carrier gas, the fluorocarbon reactant and nitrogen reactant being supplied to the chamber at flow rates such that the fluorocarbon reactant flow rate is less than the nitrogen reactant flow rate. The etch rate of the organosilicate glass can be at least 5 times higher than that of the dielectric layer. The process is useful for etching 0.25 micron and smaller contact or via openings in forming structures such as damascene structures.

4. 发明申请

WO2002097852A3 PLASMA ETCHING OF SILICON CARBIDE 审中-公开
公开(公告)号：WO2002097852A3
公开(公告)日：2002-12-05
申请号：PCT/US2002/021863
申请日：2002-03-21
申请人： LAM RESEARCH CORPORATION , LI, Si, Yi
发明人： LI, Si, Yi
IPC分类号： H01L21/3065
摘要： A process for plasma etching silicon carbide with selectivity to an overlying and/or underlying dielectric layer of material. The dielectric material can comprise silicon dioxide, silicon oxynitride, silicon nitride or various low-k dielectric materials including organic low-k materials. The etching gas includes a chlorine containing gas such as Cl 2 , an oxygen containing gas such as O 2 , and a carrier gas such as Ar. In order to achieve a desired selectivity to such dielectric materials, the plasma etch gas chemistry is selected to achieve a desired etch rate of the silicon carbide while etching the dielectric material at a slower rate. The process can be used to selectively etch a hydrogenated silicon carbide etch stop layer or silicon carbide substrate.

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