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1. 发明申请

WO2011014020A3 PHOTORESIST COMPOSITION FOR FORMING A SELF-ALIGNED DOUBLE PATTERN 审中-公开
标题翻译：用于形成自对准双重图案的光刻胶组合物
公开(公告)号：WO2011014020A3
公开(公告)日：2011-06-16
申请号：PCT/KR2010004987
申请日：2010-07-29
申请人： DONGJIN SEMICHEM CO LTD , LEE JUNG-YOUL , KIM HAN-SANG , LEE JAE-WOO , KIM JAE-HYUN
发明人： LEE JUNG-YOUL , KIM HAN-SANG , LEE JAE-WOO , KIM JAE-HYUN
IPC分类号： G03F7/004
CPC分类号： G03F7/0397 , G03F7/0035 , G03F7/0046 , G03F7/40
摘要： Disclosed is a photoresist composition for forming a self-aligned double pattern, which can bring about a thickness reduction in patterns and photoresist films in unexposed areas. The photoresist composition comprises: from 0.5 to 15 wt.% of a polymer represented by Chemical formula 1 of Claim 1; and a balance of solvent, and a reduction in the thickness of the pattern and the photoresist film in unexposed areas is brought about by means of a developing solution during development processing carried out in order to remove a boundary layer.
摘要翻译：本发明公开了用于形成自对准双图案的光致抗蚀剂组合物，其可以在未曝光区域中导致图案和光致抗蚀剂膜的厚度减小。该光刻胶组合物包含：0.5-15重量％的由权利要求1的化学式1表示的聚合物; 和余量的溶剂，并且在为了除去边界层而进行的显影处理期间，通过显影液引起未曝光区域中的图案和光致抗蚀剂膜的厚度的减小。

2. 发明申请

WO2011014011A3 PHOTORESIST COMPOSITION COMPRISING A CROSSLINKABLE CURING SUBSTANCE 审中-公开
标题翻译：包含可交联固化物质的光敏剂组合物
公开(公告)号：WO2011014011A3
公开(公告)日：2011-06-09
申请号：PCT/KR2010004969
申请日：2010-07-28
申请人： DONGJIN SEMICHEM CO LTD , JANG EU-JEAN , LEE JUN-GYEONG , HAN DONG-WOO , KIM JEONG-SIK , LEE JUNG-YOUL , LEE JAE-WOO , KIM DEOG-BAE , KIM JAE-HYUN
发明人： JANG EU-JEAN , LEE JUN-GYEONG , HAN DONG-WOO , KIM JEONG-SIK , LEE JUNG-YOUL , LEE JAE-WOO , KIM DEOG-BAE , KIM JAE-HYUN
IPC分类号： G03F7/032 , G03F7/004
CPC分类号： G03F7/0035 , G03F7/0382 , G03F7/405
摘要： Disclosed is a photoresist composition comprising a crosslinkable curing substance, able to form a pattern-protecting film on the surface of a photoresist pattern by first forming a photoresist pattern and then heating or exposing to light and heat, in a pattern-forming method employing the double patterning technique. The photoresist composition comprises: from 3 to 30 wt.% of a light-sensitive polymer; from 0.5 to 75 parts by weight of a crosslinking curing agent or agents represented by Chemical formula 1 and/or Chemical formula 2 of Claim 1, with respect to 100 parts by weight of the light-sensitive polymer; from 0.05 to 15 parts by weight of a photoacid generator, with respect to 100 parts by weight of the light-sensitive polymer; and a balance of solvent.
摘要翻译：本发明公开了一种包含可交联固化物质的光致抗蚀剂组合物，其能够通过首先形成光致抗蚀剂图案然后加热或暴露于光和热下，在光致抗蚀剂图案的表面上形成图案保护膜，双重图案化技术。该光致抗蚀剂组合物包含：3-30重量％的光敏聚合物; 相对于100重量份的光敏聚合物，0.5至75重量份的交联固化剂或由化学式1和/或权利要求1的化学式2表示的试剂; 0.05至15重量份的光酸产生剂，相对于100重量份的光敏聚合物; 和余量的溶剂。

3. 发明申请

WO2012081863A3 PHOTOSENSITIVE POLYMER, PHOTORESIST COMPOSITION INCLUDING SAME, AND METHOD FOR FORMING RESIST PATTERN USING SAME 审中-公开
标题翻译：光敏聚合物，包括它们的光电组合物和使用其形成电阻图案的方法
公开(公告)号：WO2012081863A3
公开(公告)日：2012-08-23
申请号：PCT/KR2011009503
申请日：2011-12-09
申请人： DONGJIN SEMICHEM CO LTD , OH SEUNG-KEUN , LEE JAE-WOO , KIM JEONG-SIK , LEE JUNG-YOUL , KIM JAE-HYUN
发明人： OH SEUNG-KEUN , LEE JAE-WOO , KIM JEONG-SIK , LEE JUNG-YOUL , KIM JAE-HYUN
IPC分类号： G03F7/004 , H01L21/027
CPC分类号： G03F7/0045 , C08F220/38 , C08F2220/283 , G03F7/0046 , G03F7/0397
摘要： Disclosed are a photosensitive polymer, which allows penetration of extreme ultraviolet (EUV) waves but stops waves that are longer than ultraviolet waves in a photolithography process for forming a semiconductor element, a photoresist composition including same, and a method for forming a resist pattern using same. The photosensitive polymer is represented by chemical formula 1 of claim 1.
摘要翻译：公开了一种感光性聚合物，其可以在用于形成半导体元件的光刻工艺中使用极紫外（EUV）波的穿透而阻止比紫外线波长的波，包含其的光致抗蚀剂组合物，以及使用相同。感光性聚合物由权利要求1的化学式1表示。

4. 发明申请

WO2010151041A3 COMPOSITION FOR A WATER-SOLUBLE COATING FILM 审中-公开
标题翻译：用于水溶性涂层膜的组合物
公开(公告)号：WO2010151041A3
公开(公告)日：2011-04-14
申请号：PCT/KR2010004069
申请日：2010-06-23
申请人： DONGJIN SEMICHEM CO LTD , LEE JUNG-YOUL , JANG EU-JEAN , LEE JAE-WOO , KIM JAE-HYUN
发明人： LEE JUNG-YOUL , JANG EU-JEAN , LEE JAE-WOO , KIM JAE-HYUN
IPC分类号： G03F7/26
CPC分类号： G03F7/40
摘要： Disclosed is a composition for a water-soluble coating film, which can adjust top-loss from photoresist films and patterns, and improve line edge roughness (LER). The composition for a water-soluble coating film comprises: 1 to 30 wt % of a water-soluble polymer; 0.1 to 300 weight parts of an acid compound selected from a group consisting of organic acid, inorganic acid, and a mixture thereof, with respect to 100 weight parts of the water-soluble polymer; 0.1 to 50 weight parts of an organic base, with respect to 100 weight parts of the water-soluble polymer; and the remainder being a solvent. The present invention diffuses acid by a heating process and forms a water-soluble coating film which is soluble in water or in a developer solution for enabling top-loss on photoresist films and patterns.
摘要翻译：公开了一种用于水溶性涂膜的组合物，其可以调节光致抗蚀剂膜和图案的顶部损耗，并且改善线边缘粗糙度（LER）。水溶性涂膜用组合物含有：1〜30重量％的水溶性聚合物; 0.1〜300重量份选自有机酸，无机酸及其混合物的酸化合物相对于100重量份的水溶性聚合物; 0.1〜50重量份的有机碱，相对于100重量份的水溶性聚合物; 其余为溶剂。本发明通过加热方法扩散酸，并形成可溶于水或在显影剂溶液中的水溶性涂膜，以使光致抗蚀剂膜和图案上的顶部损失。

5. 发明申请

WO2010140870A2 METHOD FOR FORMING FINE PATTERN IN SEMICONDUCTOR DEVICE 审中-公开
标题翻译：在半导体器件中形成精细图案的方法
公开(公告)号：WO2010140870A2
公开(公告)日：2010-12-09
申请号：PCT/KR2010003615
申请日：2010-06-04
申请人： DONGJIN SEMICHEM CO LTD , LEE JUN-KYOUNG , JANG EU-JEAN , HAN DONG-WOO , KIM JEONG-SIK , LEE JUNG-YOUL , LEE JAE-WOO , KIM DEOG-BAE , KIM JAE-HYUN
发明人： LEE JUN-KYOUNG , JANG EU-JEAN , HAN DONG-WOO , KIM JEONG-SIK , LEE JUNG-YOUL , LEE JAE-WOO , KIM DEOG-BAE , KIM JAE-HYUN
IPC分类号： H01L21/027
CPC分类号： H01L21/0271 , G03F7/0035 , G03F7/2051 , G03F7/40
摘要： The present invention relates to a method for forming a fine pattern in a semiconductor device, using a double exposure patterning process capable of forming a 2nd photoresist pattern by a simple exposure without using an exposure mask. The method for forming a fine pattern in a semiconductor device comprises: forming a 1st photoresist pattern on a semiconductor substrate having a layer to be etched formed thereon; heating (bake-hardening) the 1st photoresist pattern at 110 to 220 degrees Celsius to form an interlayer mirror film; forming a 2nd photoresist film on the resultant; and performing exposure and developing processes on the 2nd photoresist film without using an exposure mask but using light (low-energy light) having an energy value lower than a threshold energy (Eth) of the 2nd photoresist film, thereby forming a 2nd photoresist pattern between the 1st photoresist patterns by diffused reflection of the interlayer mirror film.
摘要翻译：本发明涉及一种在半导体器件中形成微细图案的方法，该方法使用能够通过简单曝光形成第二光致抗蚀剂图案的双曝光图案形成工艺，而不使用曝光掩模。在半导体器件中形成精细图案的方法包括：在其上形成有待蚀刻层的半导体衬底上形成第一光致抗蚀剂图案; 将第一光致抗蚀剂图案在110至220摄氏度下加热（烘烤硬化）以形成层间镜膜; 在所得物上形成第二光致抗蚀剂膜; 并且在不使用曝光掩模的情况下对第二光致抗蚀剂膜进行曝光和显影处理，但是使用具有低于第二光致抗蚀剂膜的阈值能量（Eth）的能量值的光（低能量光），从而在第二光致抗蚀剂图案之间形成第二光致抗蚀剂图案第一光致抗蚀剂图案通过层间反射膜的漫反射。

6. 发明申请

WO2012081865A3 CLEANING LIQUID COMPOSITION FOR PHOTOLITHOGRAPHY 审中-公开
标题翻译：清洗液相组合物用于光刻
公开(公告)号：WO2012081865A3
公开(公告)日：2012-09-07
申请号：PCT/KR2011009526
申请日：2011-12-12
申请人： DONGJIN SEMICHEM CO LTD , OH SEUNG-KEUN , LEE JAE-WOO , LEE JUNG-YOUL , KIM JEONG-SIK , KIM JAE-HYUN
发明人： OH SEUNG-KEUN , LEE JAE-WOO , LEE JUNG-YOUL , KIM JEONG-SIK , KIM JAE-HYUN
IPC分类号： C11D3/37 , G03F7/42
CPC分类号： C11D3/43 , C11D3/378 , G03F7/425 , G03F7/426
摘要： Disclosed is a cleaning liquid composition for preventing resist scum formation and pattern collapse, which can occur when a photoresist pattern is formed, and for preventing (improving) an increase in linewidth roughness (LWR). The cleaning liquid composition comprises: water-soluble polymers including a repeated unit that is represented by chemical formula 1 of claim 1; a surfactant; and a solvent.
摘要翻译：本发明公开了一种清洁液体组合物，用于防止形成光致抗蚀剂图案时可能发生的抗蚀剂浮渣形成和图案坍塌，并防止（改善）线宽粗糙度（LWR）的增加。清洁液体组合物包含：包含由权利要求1的化学式1表示的重复单元的水溶性聚合物; 表面活性剂; 和溶剂。

7. 发明申请

WO2012064097A3 PHOTORESIST TOPCOAT COMPOSITION FOR EXTREME ULTRAVIOLET LITHOGRAPHY, AND PATTERN-FORMING METHOD USING SAME 审中-公开
标题翻译：用于极端超紫外线光刻的光电复合材料组合物和使用其的图案形成方法
公开(公告)号：WO2012064097A3
公开(公告)日：2012-09-07
申请号：PCT/KR2011008498
申请日：2011-11-09
申请人： DONGJIN SEMICHEM CO LTD , LEE JAE WOO , OH SEUNG KEUN , LEE JUNG YOUL , KIM JEONG SIK , KIM JAE HYUN
发明人： LEE JAE WOO , OH SEUNG KEUN , LEE JUNG YOUL , KIM JEONG SIK , KIM JAE HYUN
IPC分类号： G03F7/004 , H01L21/027
CPC分类号： H01L21/0271 , G03F7/091 , G03F7/11
摘要： Disclosed are a photoresist topcoat for use in a mask for extreme ultraviolet lithography, and a composition for preparing the photoresist topcoat. The composition for preparing the photoresist topcoat comprises: a) 100 parts by weight of a water-soluble binder resin; b) 0.01 to 30 parts by weight of an ultraviolet screening agent for screening out-of-extreme-ultraviolet-band radiation; and c) 1,000 to 10,000 parts by weight of a protic solvent. When the photoresist topcoat of the present invention is used, defects of a circuit pattern caused by out-of-band ultraviolet rays of extreme ultraviolet lithography may be remarkably reduced and a rough line width may be improved.
摘要翻译：公开了用于极紫外光刻用掩模的光致抗蚀剂外涂层和用于制备光致抗蚀剂外涂层的组合物。用于制备光致抗蚀剂顶涂层的组合物包括：a）100重量份的水溶性粘合剂树脂; b）0.01至30重量份用于筛选超临界紫外线辐射的紫外线屏蔽剂; 和c）1,000至10,000重量份的质子溶剂。当使用本发明的光致抗蚀剂外涂层时，可以显着降低由极紫外光刻的带外紫外线引起的电路图案的缺陷，并且可以提高粗线宽度。

8. 发明申请

WO2011014011A9 PHOTORESIST COMPOSITION COMPRISING A CROSSLINKABLE CURING SUBSTANCE 审中-公开
标题翻译：包含可交联固化物质的光电组合物
公开(公告)号：WO2011014011A9
公开(公告)日：2011-03-24
申请号：PCT/KR2010004969
申请日：2010-07-28
申请人： DONGJIN SEMICHEM CO LTD , JANG EU-JEAN , LEE JUN-GYEONG , HAN DONG-WOO , KIM JEONG-SIK , LEE JUNG-YOUL , LEE JAE-WOO , KIM DEOG-BAE , KIM JAE-HYUN
发明人： JANG EU-JEAN , LEE JUN-GYEONG , HAN DONG-WOO , KIM JEONG-SIK , LEE JUNG-YOUL , LEE JAE-WOO , KIM DEOG-BAE , KIM JAE-HYUN
IPC分类号： G03F7/032 , G03F7/004
CPC分类号： G03F7/0035 , G03F7/0382 , G03F7/405
摘要： Disclosed is a photoresist composition comprising a crosslinkable curing substance, able to form a pattern-protecting film on the surface of a photoresist pattern by first forming a photoresist pattern and then heating or exposing to light and heat, in a pattern-forming method employing the double patterning technique. The photoresist composition comprises: from 3 to 30 wt.% of a light-sensitive polymer; from 0.5 to 75 parts by weight of a crosslinking curing agent or agents represented by Chemical formula 1 and/or Chemical formula 2 of Claim 1, with respect to 100 parts by weight of the light-sensitive polymer; from 0.05 to 15 parts by weight of a photoacid generator, with respect to 100 parts by weight of the light-sensitive polymer; and a balance of solvent.
摘要翻译：公开了包含可交联固化物质的光致抗蚀剂组合物，其能够通过首先形成光致抗蚀剂图案然后加热或暴露于光和热而在光致抗蚀剂图案的表面上形成图案保护膜，图案形成方法使用双重图案化技术。光致抗蚀剂组合物包含：3至30重量％的光敏聚合物; 相对于100重量份的光敏聚合物，0.5至75重量份的交联固化剂或由化学式1和/或权利要求1的化学式2表示的试剂; 相对于100重量份的光敏聚合物，为0.05〜15重量份的光酸发生剂; 和溶剂的平衡。

9. 发明申请

WO2010098617A3 POLYMER FOR COATING A PHOTORESIST PATTERN, AND METHOD FOR FORMING A PATTERN OF A SEMICONDUCTOR DEVICE USING SAME 审中-公开
标题翻译：用于涂覆光致抗蚀剂图案的聚合物以及使用相同方法形成半导体器件的图案的方法
公开(公告)号：WO2010098617A3
公开(公告)日：2010-12-02
申请号：PCT/KR2010001226
申请日：2010-02-26
申请人： DONGJIN SEMICHEM CO LTD , LEE JUNG-YOUL , LEE JAE-WOO , KIM DEOG-BAE , KIM JAE-HYUN
发明人： LEE JUNG-YOUL , LEE JAE-WOO , KIM DEOG-BAE , KIM JAE-HYUN
IPC分类号： G03F7/004
CPC分类号： G03F7/40
摘要： Disclosed are a polymer for coating a photoresist pattern, which can improve the resolution of a lithography process, and a method for forming a pattern of a semiconductor device using the polymer. The polymer for coating a photoresist pattern is expressed in chemical formula 1 of claim 1. In chemical formula 1, R* is independently a hydrogen atom or a methyl group (-CH3), R1 is a linear or cyclic hydrocarbon group with 1 to 18 carbon atoms, R2 is a hydroxy group (-OH), a carboxyl group (-COOH), or a linear or cyclic hydrocarbon group with 3 to 10 carbon atoms, 1 to 3 nitrogen atoms, and 1 to 3 oxygen atoms, and x and y are each a mol % of each repeating unit based on the entirety of the polymer of chemical formula 1, where x is 5 to 100 mol %, and y is 0 to 95 mol %.
摘要翻译：本发明公开了一种用于涂覆光致抗蚀剂图案的聚合物，其可以提高光刻工艺的分辨率，以及使用该聚合物形成半导体器件的图案的方法。用于涂覆光致抗蚀剂图案的聚合物在权利要求1的化学式1中表示。在化学式1中，R *独立地为氢原子或甲基（-CH 3），R 1为具有1至18个碳原子的直链或环状烃基碳原子，R2是羟基（-OH），羧基（-COOH）或具有3至10个碳原子，1至3个氮原子和1至3个氧原子的直链或环状烃基，并且x 和y分别是基于化学式1的聚合物的全部的每种重复单元的摩尔％，其中x为5至100摩尔％，并且y为0至95摩尔％。

10. 发明申请

WO2013042973A3 I-LINE PHOTORESIST COMPOSITION AND METHOD FOR FORMING FINE PATTERN USING SAME 审中-公开
标题翻译：在线光敏剂组合物和使用该组合物形成精细图案的方法
公开(公告)号：WO2013042973A3
公开(公告)日：2013-05-23
申请号：PCT/KR2012007576
申请日：2012-09-21
申请人： DONGJIN SEMICHEM CO LTD , LEE JUNG-YOUL , JANG EU-JEAN , LEE JAE-WOO , KIM JAE-HYUN
发明人： LEE JUNG-YOUL , JANG EU-JEAN , LEE JAE-WOO , KIM JAE-HYUN
IPC分类号： G03F7/26 , G03F7/16
CPC分类号： G03F7/0388 , G03F7/022 , G03F7/0226 , G03F7/0233 , G03F7/405
摘要： Disclosed are an I-line photoresist composition having thermal stability at a high temperature (200 to 250°C) and able to form a fine pattern by using an acid diffusion barrier, and a method for forming the fine pattern using the I-line photoresist composition. The I-line photoresist composition comprises: 1 to 99 mol% of a repeat unit that is represented by chemical formula 1 of the present description, and a polymer containing 1 to 99 mol% of a repeat unit, which is selected from a group consisting of a repeat unit that is represented by chemical formula 2 of the present description, a repeat unit that is represented by chemical formula 3 of the present description, and a mixture of the above repeat units; a photosensitive compound containing at least two diazonaphthoquinone (DNQ) groups; and an organic solvent.
摘要翻译：本发明公开了一种在高温（200至250℃）下具有热稳定性并且能够通过使用酸扩散阻挡层形成精细图案的I线光致抗蚀剂组合物，以及使用I线光致抗蚀剂形成精细图案的方法组成。该I线光刻胶组合物包含：本说明书的化学式1表示的1〜99摩尔％的重复单元和1〜99摩尔％的重复单元的聚合物，所述重复单元选自由本说明书的化学式2表示的重复单元的重复单元，由本说明书的化学式3表示的重复单元以及上述重复单元的混合物; 含有至少两个重氮萘醌（DNQ）基团的光敏化合物; 和有机溶剂。

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