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1. 发明申请

WO1992001287A1 DEVICE WITH SELF-AMPLIFYING DYNAMIC MOS TRANSISTOR STORAGE CELLS 审中-公开
标题翻译：具有自放大动态MOS晶体管存储单元的器件
公开(公告)号：WO1992001287A1
公开(公告)日：1992-01-23
申请号：PCT/DE1991000502
申请日：1991-06-18
申请人： SIEMENS AKTIENGESELLSCHAFT , KRAUTSCHNEIDER, Wolfgang , RISCH, Lothar , LAU, Klaus
发明人： SIEMENS AKTIENGESELLSCHAFT
IPC分类号： G11C05/00
CPC分类号： G11C11/405 , G11C5/005 , G11C11/404 , H01L27/108
摘要： The invention concerns a device with self-amplifying dynamic MOS transistor cells each with an MOS selector transistor (AT), the gate of which is connected to a word line (WL), and an MOS storage transistor (ST) at the gate of which is applied a capacitor (C) for charge storage. This self-amplifying storage cell can be described into and read out with only one bit line (BL) and one word line (WL). The two transistors (AT and ST) are connected in series and a shared drain source region (DS) is connected to the gate electrode (GST) of the control transistor via a voltage-dependent resistor (VR). The main advantages of the invention are that the line geometry can be scaled without reducing the charge quantity (Q) which can be read out from the bit line (BL), that the charge quantity (Q) which can be read out is greater than the charge stored in the capacitor (C) operative at the gate of the storage transistor and that the two MOS transistors (AT and ST) are fairly easy to make.
摘要翻译：本发明涉及具有自放大动态MOS晶体管单元的器件，每个具有MOS选择晶体管（AT），其栅极连接到字线（WL），其栅极处的MOS存储晶体管（ST）施加电容器（C）用于电荷存储。该自放大存储单元可以仅用一个位线（BL）和一个字线（WL）进行描述和读出。两个晶体管（AT和ST）串联连接，并且共用漏极源极区（DS）经由电压依赖电阻（VR）连接到控制晶体管的栅极（GST）。本发明的主要优点在于可以缩放线几何形状，而不会减小可从位线（BL）读出的电荷量（Q），即可读出的电荷量（Q）大于存储在存储晶体管的栅极处的电容器（C）中存储的电荷以及两个MOS晶体管（AT和ST）相当容易制造。

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